Англо-рус. научно-техн. словарь 2
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IMPATT (impact avalanche and transit time) 278
IMS (Information Management System) 288
IMT (impulse-modulated telemetering) 280
INCH (integrated chopper) 298 inf (information) 287 information exchange system
(IES) 287
INIC (current-inversion nega- tive-immittance converter) 139
INIC (current-inversion nega- tive-im-pedance converter) 139
INS (Internal System Number)
304
INT (integer) 297
INT, INTPT (interrupt) 306
IOC, ioc (input-output controller) 293
iocs (i/o control system) 309
IOCS (input-output control system) 293
IOR (input-output register) 293
IPA (intermediate power amplifier) 303
IPACS (interactive pattern analisis and classification system) 301
IPL (initial program loader)
290
IPSE (integrated project support environment) 298
IR (innovations representation)
291
IR (instruction register) 296 IR (internal resistance) 304
IRCCD (infra(-)red charge-co- upled device) 289
IRFET (infra(-)red sensing field-effect transistor) 289
IRST (infra(-)red signal translator) 289
IS (information separator) 288 IS (internal shield) 304
IS (interrupt status (register))
307
ISAM (index sequential access method) 284
ISDN (integrated services digital network) 298
ISEM (improved standard electronic module) 280
ISI (intersymbol interference)
307
ISM (industrial, scientific and medical) 285
ISO (International Standards Organization) 305
ISP (instruction set processor)
296
IT (information technology) 288 J (joint) 313
J (joule) 313
J, jc (junction) 314
JC (jump on carry) 314 JM (jump on minus) 314 JMP (jump) 313
JNC (jump on no carry) 314 JP (jump on positive) 314 JPE (jump on parity even) 314 JPO (jump on parity odd) 314 JZ (jump on zero) 314
K (kilo-) 316
KB, KBD (keyboard) 315 KBS (kilobits per second) 316
KDC (key distribution center)
315
KEPROM (keyed-access erasable program-mable read-only memory) 316
KISS (keep in simple stupid)
316
KSAM (keyed sequential access method) 316
LAN (local area network) 332
LAPUT (light-activated programmable unijunction transistor)
325
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LAS (light-activated switch)
325
LASCR (light-activated silicon control-led rectifier) 325
LASCS (light-activated silicon control-led switch) 325
LAVA (linear amplifier for various application) 327
LBA (linear-bounded automation) 328
LC (liquid crystal) 330
LC, LOC (line of communication) 327
LCCC (leadless ceramic chip carrier) 321
LCD (liquid-crystal display)
330
LCLV (liquid-crystal light valve) 330
LCS (large capacity storage)
319
LDM (linear delta modulation)
327
LDR (light-dark ratio) 325
LDR (light-dependent resistor)
325
LE (less or equal) 321
LED (light-emitting diode) 325
LEDA (light-emitting diode array) 325
LEED (low-energy electron diffraction) 340
LEF (light-emitting film) 325 LF (line feed) 324
LF (low frequency) 340
LFU (least frequently used removal) 322
LFW (low frequency window)
340
LHP (left-hand plane) 322
LIC (linear integrated circuit)
328
LIF (low-insertion-force (connector)) 340
LIFO (last-in, first-out) 319
LIN (linear integrated network)
328
LIOCS (logical input/output control system) 337
LIS (large interactive surface (device)) 319
LL (load line) 332
LLL (low level logic) 340 LNA (low-noise amplifier) 340 LO (local oscillator) 333
LO (low order) 340
LOCI (logarithmic computing instrument) 334
LOP (line of position) 327 LOS (line-of-sight) 329 LP (line printer) 327
LP (linear programming) 328
LPC (linear predictive coding)
328
LPD:L (low-power diode-tran- sistor micrologic) 341
LPDTL (low-power diode-tran- sistor logic) 341
LPF (low-pass filter) 341
LPRTL (low-power resistortransistor logic) 341
LPS (local periodic structure)
333
LR (line relay) 327
LRC (layout-rule check) 314
LRC (longitudinal redundancy check) 338
LRU (least recently used removal) 322
LS (limit switch) 326
LS, LSTOR (local storage) 333
LSAR (local storage address register) 333
LSB (lower sideband) 340
LSD (least-significant digit)
322
LSHI (large-scale hybrid integration) 319
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LSHIC (large-scale hybrid integration circuit) 319
LSI (large-scale integration)
319
LSIC (large-scale integration circuit) 319
LSIC-MOS (large-scale integration circuit metal-oxide-semi- conductor) 319
LSM (linear restricted scattering matrix) 328
LSSD (level-sensitive scan design) 323
LSTTL (low-power Schottky transistor-transistor logic) 341
LT (less than) 341
LTM (line-type modulation)
329
LTP (low-temperature phase)
341
LTU (line terminal unit) 327
LVEXP (low-voltage electronic crosspoint) 341
LVL (layout-versus-layout) 321
LVS (layout-versus-schematic consistency checker) 321
M (mega-) 356 m (milli-) 365
M2FM (modified modified frequency modulation) 369
ma, mA (milliampere) 365
MAACS (multiaddress asynchronous communication system)
374
MAC (memory access controller) 357
MAC (message authentication code) 360
MADA (multiple-access discre- te-address system) 377
magtape, MT (magnetic tape)
344
MAOS (metal-alumina-oxide- semicon-dactor) 361
MAS (metal-alumina-semicon- dactor) 361
MAT (memory address test)
357
MB (modular block) 370
MBT (metal-base transistor)
361
MBT (metal-Schottky gate field-effect transistor) 362
Mbyte (megabyte) 356
MC (microcircuit) 363
MCA (multichannel analyzer)
374
MCC (master control center)
351
MCE (micro code engine) 363
MCM (Monte Carlo method)
372
MCU (microprocessor control unit) 364
MDAC (multiplying digital-to- analog converter) 378
MDR (main storage data register) 346
MDR (memory data register)
357
MDS (microprocessor development system) 364
MDS (minimum detectable signal) 366
MDS (minimum discernible signal) 366
MEAS (measurement) 354
MEC (method of equivalent currents) 363
MEMA, MMA (microelectro- nic-modular assembly) 364
Mev (million electron-volt) 365 MF (matched filter) 352
MF (medium frequency) 356
MFM (modified frequency modulation) 369
MFM (multifunctional module)
375
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MFSK (multilevel frequency– shift keying) 375
MFST (metal-ferroelectric-se- miconductor transistor) 361
MGC (manual gain control)
348
MGT (metal-gate transistor)
361
MI (memory interface) 357
MIDI (musical instrument device interface) 365
MIF (midinfrared) 365
MIM (metal-insulator-metal)
361
MIMD (Multiple Instruction Multiple Data) 365
MIMIS (metal-insulator-metal- insulator semiconductor) 361
ming (minimum latency program) 366
MIP (machine instruction processor) 342
MIPS (metal-insulator-piezo- electric se-miconductor) 361
MIS (management information system) 347
MISAR (microprocessor sensing and automatic regulation) 364
MISD (Multiple Instruction Single Data) 367
MISFET (metal-insulator-semi- conductor field-effect transistor) 361
MISIS (metal-insulator-semi- conductor-insulator-semiconductor)
361
MKS (meter, kilogram, second)
368
MLE (maximum likelihood estimate) 354
MMAR (main memory address register) 345
mmf (magnetomotive force) 345
MMR (main memory register)
346
MMSE (minimum-mean-squ- are error) 367
MMU (memory management unit) 358
MMW (millimeter waves) 365
MNOS (metal-nitride-oxide-se- miconductor transistor) 362
MNOS (metal-nitride-oxide-se- miconductor) 362
MNS (metal-nitride-semicon- ductor) 362
MNSFET (metal-(silicon)-nitri- de-semicon-ductor field-effect transistor) 361
MO (master oscillator) 351 MOD (modulator) 370
MOM (metal-oxide-metal) 362
MOS (metal-oxide—semicon- ductor) 362
MOS (metal-oxide-silicon) 362
MOS EAROM (metal-oxide- semiconductor electrically-alterable read-only memory) 362
MOSbip (metal-oxide-semicon- ductor and bipolar) 362
MOSC (metal-oxide-semicon- ductor capacitor) 362
MOSFET (metal-oxide-semi- conductor field-effect transistor) 362
MOSIC (metal-oxide-semicon- ductor integrated circuit) 362
MOSLSIC (metal-oxide-semi- conductor integrated large-scale circuit) 362
MOST (metal-oxide-semicon- ductor transistor) 362
MOSTL metal-oxide-semicon- ductor transistor logic () 362
MOV (memory-to-memory move instruction) 359
MP (mean power) 354
MPC (matrix power converter)
353
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MPP (massively parallel processor) 351
MPSK (multilevel phase–shift keying) 375
MPU (microprocessor (unit))
364
MPX, Mux, mux (multiplex)
377
MR (magnetoresistor) 345
MRAS (model reference adaptive system) 369
MSB (most significant bit) 373 MSF (mass storage facility) 350
MSF (matched spatial filter)
352
MSG/WTG (message waiting)
361
MSI (medium-scale integration)
356
MSIC (medium-scale integration circuit) 356
MSK (minimum shift keying)
366
MSMV (monostable multivibrator) 371
MSS (multispectral scanner subsystem) 379
MSTOR (main storage) 346
MSVC (mass storage volume control) 350
MTBE (mean time between errors) 354
MTBF (mean time between failures) 354
MTC (memory test computer)
358
MTF (modulation transfer function) 370
MTL (merged transistor logic)
359
MTM (module test mode) 370
MTTF (mean time to failures)
355
MTTFF (mean time to first failures) 354
MTTR (mean time to repair)
354
MTU (magnetic-tape unit) 345 MU (measurement unit) 354
MUCH FET (multichannel field-effect transistor) 374
MUF (maximum usable frequency) 354
MUT (module under test) 370
MUX, mux, MPX (multiplexer)
377
MVS (multiprogramming with variable tasks) 379
MVS (multiprogramming with virtual storage) 379
MW (microwave) 364 MX (maxwell) 354
MXP (metallic crosspoint) 362 N (Newton) 386
NA (numerical aperture) 395
NAK (negative acknowledgement) 380
NBDL (narrow-band data line)
381
NBFM, NFM (narrow-band frequency modulation) 381
NC (no connection) 386
NC (nonlinear capacitance) 389 NC (normally closed) 392
NC (numerical control) 395
NCFSK (noncoherent frequent- cy-shift keying) 388
ND (neutral-density (filter)) 385 ND (no detect) 386
ND (nondelay) 388
ND (nondirectional) 388
NDC (negative differential conductivity) 382
NDF (nonlinear distortion factor) 389
NDL (network description language) 385
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NDT (nondestructive test) 388
NEA (negative electron affinity)
383
NEP (noise-equivalent power)
387
NET (noise-equivalent temperature) 387
NET, net (network) 384 NF (noise factor) 387
NFB (negative feedback) 383 NFS (network file system) 385 NI (noninductive) 389
NIIL (neon indicating light) 383
NIPO (negative input, positive output) 383
NIT (neon indicator tube) 383
NIV (no inspection verification)
386
NL, NLT (noise limiter) 387 NLC (nonlinear capacitor) 389
NLCSE (nonlinear charge-sto- rage element) 389
NLE (nonlinear element) 389
NLI (nonlinear interpolating)
389
NLI (nonlinear interpolator)
389
NLP (nonlinear programming)
389
NLR (nonlinear resistor) 389
NLR, NR (nonlinear resistance)
389
NLS (nonlinear system) 389 NM (no message) 386
NM (noise meter) 387
NM, nomag (nonmagnetic) 389
NMI (nonmaskable interrupt)
389
NMRR (normal-mode rejection ratio) 392
NO (normally open) 392
NOC (normally open contact)
392
NODE (noise diode) 387
NOP (no operation) 386
NOT, not (number of turns)
394
Np (neper) 383
NP (number of primary turns)
394
NP (number of secondary turns) 394
NPR (noise power ratio) 387 NR (negative resistance) 383 NR (noise reduction) 387 NR (nonreversible) 390
NRD (negative resistance diode)
383
NRE (negative resistance effect)
383
NRE (negative resistance element) 383
NRS (noise reduction system)
387
NRZ (nonreturn to zero) 390
NRZI (nonreturn to zero inverted) 390
NSC (noise suppression circuit)
387
NSGN (noise generator) 387 NSR (noise-to-signal ratio) 387
NTC (negative temperature coefficient) 383
NTL, NUTL (nonuniform transmission line) 391
O2DFT (odd-time odd-frequen- cy discrete Fourier transform) 399
OB (occupied bandwidth) 398 OB (output buffer) 412
OBO (output backoff) 412
OCR (optical character recognition) 407
ODFT (odd discrete Fourier transform) 399
ODL (optical delay line) 407
OEM (original equipment manufacturer) 410
OG (output generator) 412
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OHW (output highway) 412 OL (on-line) 401
OL (open loop) 403 OL, ovld (overload) 415
OLCA (on-line circuit analysis)
401
OLTF (open loop transfer function) 403
OMS (optoelectronic multiplex switch) 408
ONCE (on-circuit emulation)
400
Op Cd (operation code) 405
OPA (optoelectronic pulse amplifier) 408
op-amp, OA (operational amplifier) 405
OPM (operation per minute)
405
OPND (operand) 403
OPO (optical parametric oscillator) 407
opt (optimum) 408
OR (operating range) 404 OR (ordering register) 409 OR (overall resistance) 413 ORG (origin) 409
ORRT (operational readiness and reliability test) 405
OS (operating system) 404 OS (operational system) 406
OSA (open systems architecture) 403
OSA (overall system attenuation) 413
osc (oscillator) 411
OSI (open systems interconnection) 403
OT (overlay transistor) 415 OtbT (object-to-be-tested) 397
OTF (optical transfer function)
407
OTPROM (one-time-program- mable ROM) 401
overload relay (OR) 415
OXIM (oxide-isolated monolith)
415
P (permeance) 429 p (plate) 436
p, pwr (power) 443 P/S (parallel/series) 420 Pa (pascal) 423
PA, paramp (parametric amplifier) 421
PAC (partitioned adaptive control) 423
PAD (packet assembly and disassembly) 416
PAM (partitioned access method) 423
PAM (personal applications manager) 429
PAO (pulsed avalanche(-diode) oscillator) 469
PC (parity control) 422
PC (peripheral controller) 428 PC (personal computer) 429 PC (printed circuit) 451
PC, P-counter (program counter) 458
PCB (printed circuit board) 451
PCCB (programming chip configuration byte) 462
PCI (photon-coupled isolator)
431
PCI (photon-coupled transistor) 432
PCI (polycrystal isolation) 438
PCL (parallel communication link) 420
PCM (predicative pulse code modulation) 445
PCM (pulse code modulation)
468
PCN (personal computer network) 429
PCP (primary control program) 449
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PCS (print contrast signal) 450
PCU (peripheral control unit)
428
PD (photodiode) 431
PD (potential difference) 442 pd (pulse duration) 468
PDA (pulse distribution amplifier) 468
PDA (push-down automaton)
471
PDBM (pulse-delay binary modulation) 469
PDC (parallel data controller)
420
PDL (program design language) 459
PDM (pulse-duration modulation) 469
PDN (public data network) 468
PDS (program development system) 459
PE (phase encoding) 430 PE (photoelectric) 431
PEA (positive electron affinity)
441
PEC (packaged electronic circuit) 416
PEC (photoelectric cell) 431
PED (photon-enhanced diffusion) 432
PEF (prediction-error filter)
445
pel (picture element) 433
PEM (photoelectric memory)
431
PEM (photoelectromagnetic)
431
PEP (peak envelope power) 425
PERT (Project Evaluation and Review Technique) 463
PF (parity formation) 422 PF (pulse former) 468
PFC (phase-frequency characteristic) 430
PFC (power factor corrector)
443
PFD (power flux density) 443
PFM (pulse-frequency modulation) 469
PFN (pulse-forming network)
469
PG (power gain) 443 PG (processing gain) 459
PI (position indicator) 440
PIA (peripherical interface adapter) 428
PIC (peripherical interface channel) 429
PIC (programmable interrupt controller) 461
PIM (pulse interval modulation) 469
PINO (positive input, negative output) 441
PIO (parallel input-output) 420
PIO (programmable inputoutput chip) 461
PIP (peripheral interchange program) 428
PIP (programmed interconnection pattern) 461
PIPLSIC (programmed interconnection pattern large-scale integration circuit) 461
PIPO (parallel in parallel out)
420
PISO (parallel in serial out) 420
PIU (peripherical interface unit) 429
PIV (peak inverse voltage) 426
PLA (programmable logic array) 461
PLC (programmed logic controller) 462
PLD (phase-locked demodulator) 430
PLD (pulse length discriminator) 469
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PLI (piecewise-linear interpolator) 434
PLL (phase-locked loop) 430
PLO (phase-locked oscillator)
431
PM (permanent magnet) 429 PM (phase modulation) 430
PMA (protected memory address) 466
PMD (postmortem dump) 442
PME (photomagnetoelectric)
431
PMT (photomultiplier tube)
431
PN (pseudonoise) 467
PndB (perceived noise decibel)
426
PO (power output) 443 POE (point of entry) 437
POL (problem-oriented language) 454
POS terminal (point-of-sale terminal) 440
pot (potentiometer) 442 pp (pulse pair) 469
PPBM (pulse-polarization binary modulation) 469
PPI (plan-position indicator)
435
PPM (peak program meter)
426
PPM (pulse-position modulation) 469
PPP (peak pulse power) 426 pps (pictures per second) 433 PR (polarized relay) 437
PR (pseudorandom) 467 PR (pulse rate) 469
PRBS (pseudorandom binary sequency) 467
PRC (peak rectified current)
426
prf (pulse repetition frequency)
469
PRFI (pulse repetition rate (frequency)) 469
pri (primary) 245
PRISE (program for integrated shipboard electronics) 459
PRK (phase-reversal keying)
431
Prolog (programming in logic)
464
PROM (programmable read only memory) 461
PRV (peak reverse voltage) 426 PS (power supply) 443
PSA (protected storage address) 466
PSD (phase-sensitive detector)
431
PSD (power spectrum density)
443
PSE (programming support environment) 462
PSK (phase shift keying) 430
PSL/PSA (problem statement language / problem statement analyzer) 454
PSN (packet switching network) 416
PSNR (power signal-to-noise ratio) 443
PSO (parametric subharmonic oscillator) 421
PSU (power supply unit) 443 PSW (process status word) 456
PSW (processor status word)
456
PSW (program status word)
460
PTC (positive temperature coefficient) 441
PTH (plated-through hole) 436
PTM (pulse-time modulation)
469
PTS (peripheral transaction server) 428
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PUT (programmable unijunction transistor) 461
PW (printed wiring) 451 PW (pulse width) 469
PWD (pulse-width discriminator) 470
PWM (pulse width modulation)
469
PWM (pulse-width modulator)
469
PZT (piezoelectric transducer)
434
Q (quantity) 472
Q, qlty,qual (quality) 472 QA (quality assurance) 472
QAGC, qagc (quiet automatic gain control) 475
QBE (query by example) 473 QC (quality control) 472 QC (quartz crystal) 473
QCB (queue control block) 474 QD (quick disconnect) 475
QDM (quick disconnector miniature) 475
QF (quality factor) 472
QFM (quantizer frequency modulation) 473
QISAM (queued indexed sequential access method) 474
QRC (quick reaction capability) 475
QSAM (queued sequential access method) 474
QTAM (queued telecommunication access method) 474
qtz (quartz)
QUAM (quadrature amplitude modulation) 471
quenching (Q) 473
quiet automatic volume control (QAVC) 475
RACE (random-access computer equipment) 478
RADAS (random-access discre- te-address system) 478
RADSIM (random-access dis- crete-address system simulation)
478
RALU (register ALU) 492
RAM (random-access memory)
478
RAM (read-access memory)
482
RAVR (receiver) 485
RB (return-to-bias) 506
RBE (relative biological effectiveness) 494
RC (remote control) 497 RC (return on carry) 505
RCDTL (resistor-capacitor di- ode-transistor logic) 502
RCE (remote control equipment) 497
RCTL (resistor-capacitor transistor logic) 502
RCTL (resistor-coupled transistor logic) 502
read-only memory (ROM) 482
REPROM reprogrammable read-only memory () 500
return-to-zero (RTZ, RZ) 506 RF (reference frequency) 490
RFA (radio-frequency amplifier) 476
RFC (radio-frequency choke)
476
RFI (radio-frequency interference) 476
RHP (right hand plane) 507
RISC (reduced instruction set computer architecture) 488
RISC (reduced instruction set computer) 488
RJE (remote job entry) 498 RM (return on minus) 505 RMM (read-mostly mode) 482 RMS (rod memory system) 508