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Англо-рус. научно-техн. словарь 2

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________________________________________________________________________________________299

IMPATT (impact avalanche and transit time) 278

IMS (Information Management System) 288

IMT (impulse-modulated telemetering) 280

INCH (integrated chopper) 298 inf (information) 287 information exchange system

(IES) 287

INIC (current-inversion nega- tive-immittance converter) 139

INIC (current-inversion nega- tive-im-pedance converter) 139

INS (Internal System Number)

304

INT (integer) 297

INT, INTPT (interrupt) 306

IOC, ioc (input-output controller) 293

iocs (i/o control system) 309

IOCS (input-output control system) 293

IOR (input-output register) 293

IPA (intermediate power amplifier) 303

IPACS (interactive pattern analisis and classification system) 301

IPL (initial program loader)

290

IPSE (integrated project support environment) 298

IR (innovations representation)

291

IR (instruction register) 296 IR (internal resistance) 304

IRCCD (infra(-)red charge-co- upled device) 289

IRFET (infra(-)red sensing field-effect transistor) 289

IRST (infra(-)red signal translator) 289

IS (information separator) 288 IS (internal shield) 304

IS (interrupt status (register))

307

ISAM (index sequential access method) 284

ISDN (integrated services digital network) 298

ISEM (improved standard electronic module) 280

ISI (intersymbol interference)

307

ISM (industrial, scientific and medical) 285

ISO (International Standards Organization) 305

ISP (instruction set processor)

296

IT (information technology) 288 J (joint) 313

J (joule) 313

J, jc (junction) 314

JC (jump on carry) 314 JM (jump on minus) 314 JMP (jump) 313

JNC (jump on no carry) 314 JP (jump on positive) 314 JPE (jump on parity even) 314 JPO (jump on parity odd) 314 JZ (jump on zero) 314

K (kilo-) 316

KB, KBD (keyboard) 315 KBS (kilobits per second) 316

KDC (key distribution center)

315

KEPROM (keyed-access erasable program-mable read-only memory) 316

KISS (keep in simple stupid)

316

KSAM (keyed sequential access method) 316

LAN (local area network) 332

LAPUT (light-activated programmable unijunction transistor)

325

300________________________________________________________________________________________

LAS (light-activated switch)

325

LASCR (light-activated silicon control-led rectifier) 325

LASCS (light-activated silicon control-led switch) 325

LAVA (linear amplifier for various application) 327

LBA (linear-bounded automation) 328

LC (liquid crystal) 330

LC, LOC (line of communication) 327

LCCC (leadless ceramic chip carrier) 321

LCD (liquid-crystal display)

330

LCLV (liquid-crystal light valve) 330

LCS (large capacity storage)

319

LDM (linear delta modulation)

327

LDR (light-dark ratio) 325

LDR (light-dependent resistor)

325

LE (less or equal) 321

LED (light-emitting diode) 325

LEDA (light-emitting diode array) 325

LEED (low-energy electron diffraction) 340

LEF (light-emitting film) 325 LF (line feed) 324

LF (low frequency) 340

LFU (least frequently used removal) 322

LFW (low frequency window)

340

LHP (left-hand plane) 322

LIC (linear integrated circuit)

328

LIF (low-insertion-force (connector)) 340

LIFO (last-in, first-out) 319

LIN (linear integrated network)

328

LIOCS (logical input/output control system) 337

LIS (large interactive surface (device)) 319

LL (load line) 332

LLL (low level logic) 340 LNA (low-noise amplifier) 340 LO (local oscillator) 333

LO (low order) 340

LOCI (logarithmic computing instrument) 334

LOP (line of position) 327 LOS (line-of-sight) 329 LP (line printer) 327

LP (linear programming) 328

LPC (linear predictive coding)

328

LPD:L (low-power diode-tran- sistor micrologic) 341

LPDTL (low-power diode-tran- sistor logic) 341

LPF (low-pass filter) 341

LPRTL (low-power resistortransistor logic) 341

LPS (local periodic structure)

333

LR (line relay) 327

LRC (layout-rule check) 314

LRC (longitudinal redundancy check) 338

LRU (least recently used removal) 322

LS (limit switch) 326

LS, LSTOR (local storage) 333

LSAR (local storage address register) 333

LSB (lower sideband) 340

LSD (least-significant digit)

322

LSHI (large-scale hybrid integration) 319

________________________________________________________________________________________301

LSHIC (large-scale hybrid integration circuit) 319

LSI (large-scale integration)

319

LSIC (large-scale integration circuit) 319

LSIC-MOS (large-scale integration circuit metal-oxide-semi- conductor) 319

LSM (linear restricted scattering matrix) 328

LSSD (level-sensitive scan design) 323

LSTTL (low-power Schottky transistor-transistor logic) 341

LT (less than) 341

LTM (line-type modulation)

329

LTP (low-temperature phase)

341

LTU (line terminal unit) 327

LVEXP (low-voltage electronic crosspoint) 341

LVL (layout-versus-layout) 321

LVS (layout-versus-schematic consistency checker) 321

M (mega-) 356 m (milli-) 365

M2FM (modified modified frequency modulation) 369

ma, mA (milliampere) 365

MAACS (multiaddress asynchronous communication system)

374

MAC (memory access controller) 357

MAC (message authentication code) 360

MADA (multiple-access discre- te-address system) 377

magtape, MT (magnetic tape)

344

MAOS (metal-alumina-oxide- semicon-dactor) 361

MAS (metal-alumina-semicon- dactor) 361

MAT (memory address test)

357

MB (modular block) 370

MBT (metal-base transistor)

361

MBT (metal-Schottky gate field-effect transistor) 362

Mbyte (megabyte) 356

MC (microcircuit) 363

MCA (multichannel analyzer)

374

MCC (master control center)

351

MCE (micro code engine) 363

MCM (Monte Carlo method)

372

MCU (microprocessor control unit) 364

MDAC (multiplying digital-to- analog converter) 378

MDR (main storage data register) 346

MDR (memory data register)

357

MDS (microprocessor development system) 364

MDS (minimum detectable signal) 366

MDS (minimum discernible signal) 366

MEAS (measurement) 354

MEC (method of equivalent currents) 363

MEMA, MMA (microelectro- nic-modular assembly) 364

Mev (million electron-volt) 365 MF (matched filter) 352

MF (medium frequency) 356

MFM (modified frequency modulation) 369

MFM (multifunctional module)

375

302________________________________________________________________________________________

MFSK (multilevel frequency– shift keying) 375

MFST (metal-ferroelectric-se- miconductor transistor) 361

MGC (manual gain control)

348

MGT (metal-gate transistor)

361

MI (memory interface) 357

MIDI (musical instrument device interface) 365

MIF (midinfrared) 365

MIM (metal-insulator-metal)

361

MIMD (Multiple Instruction Multiple Data) 365

MIMIS (metal-insulator-metal- insulator semiconductor) 361

ming (minimum latency program) 366

MIP (machine instruction processor) 342

MIPS (metal-insulator-piezo- electric se-miconductor) 361

MIS (management information system) 347

MISAR (microprocessor sensing and automatic regulation) 364

MISD (Multiple Instruction Single Data) 367

MISFET (metal-insulator-semi- conductor field-effect transistor) 361

MISIS (metal-insulator-semi- conductor-insulator-semiconductor)

361

MKS (meter, kilogram, second)

368

MLE (maximum likelihood estimate) 354

MMAR (main memory address register) 345

mmf (magnetomotive force) 345

MMR (main memory register)

346

MMSE (minimum-mean-squ- are error) 367

MMU (memory management unit) 358

MMW (millimeter waves) 365

MNOS (metal-nitride-oxide-se- miconductor transistor) 362

MNOS (metal-nitride-oxide-se- miconductor) 362

MNS (metal-nitride-semicon- ductor) 362

MNSFET (metal-(silicon)-nitri- de-semicon-ductor field-effect transistor) 361

MO (master oscillator) 351 MOD (modulator) 370

MOM (metal-oxide-metal) 362

MOS (metal-oxide—semicon- ductor) 362

MOS (metal-oxide-silicon) 362

MOS EAROM (metal-oxide- semiconductor electrically-alterable read-only memory) 362

MOSbip (metal-oxide-semicon- ductor and bipolar) 362

MOSC (metal-oxide-semicon- ductor capacitor) 362

MOSFET (metal-oxide-semi- conductor field-effect transistor) 362

MOSIC (metal-oxide-semicon- ductor integrated circuit) 362

MOSLSIC (metal-oxide-semi- conductor integrated large-scale circuit) 362

MOST (metal-oxide-semicon- ductor transistor) 362

MOSTL metal-oxide-semicon- ductor transistor logic () 362

MOV (memory-to-memory move instruction) 359

MP (mean power) 354

MPC (matrix power converter)

353

________________________________________________________________________________________303

MPP (massively parallel processor) 351

MPSK (multilevel phase–shift keying) 375

MPU (microprocessor (unit))

364

MPX, Mux, mux (multiplex)

377

MR (magnetoresistor) 345

MRAS (model reference adaptive system) 369

MSB (most significant bit) 373 MSF (mass storage facility) 350

MSF (matched spatial filter)

352

MSG/WTG (message waiting)

361

MSI (medium-scale integration)

356

MSIC (medium-scale integration circuit) 356

MSK (minimum shift keying)

366

MSMV (monostable multivibrator) 371

MSS (multispectral scanner subsystem) 379

MSTOR (main storage) 346

MSVC (mass storage volume control) 350

MTBE (mean time between errors) 354

MTBF (mean time between failures) 354

MTC (memory test computer)

358

MTF (modulation transfer function) 370

MTL (merged transistor logic)

359

MTM (module test mode) 370

MTTF (mean time to failures)

355

MTTFF (mean time to first failures) 354

MTTR (mean time to repair)

354

MTU (magnetic-tape unit) 345 MU (measurement unit) 354

MUCH FET (multichannel field-effect transistor) 374

MUF (maximum usable frequency) 354

MUT (module under test) 370

MUX, mux, MPX (multiplexer)

377

MVS (multiprogramming with variable tasks) 379

MVS (multiprogramming with virtual storage) 379

MW (microwave) 364 MX (maxwell) 354

MXP (metallic crosspoint) 362 N (Newton) 386

NA (numerical aperture) 395

NAK (negative acknowledgement) 380

NBDL (narrow-band data line)

381

NBFM, NFM (narrow-band frequency modulation) 381

NC (no connection) 386

NC (nonlinear capacitance) 389 NC (normally closed) 392

NC (numerical control) 395

NCFSK (noncoherent frequent- cy-shift keying) 388

ND (neutral-density (filter)) 385 ND (no detect) 386

ND (nondelay) 388

ND (nondirectional) 388

NDC (negative differential conductivity) 382

NDF (nonlinear distortion factor) 389

NDL (network description language) 385

304________________________________________________________________________________________

NDT (nondestructive test) 388

NEA (negative electron affinity)

383

NEP (noise-equivalent power)

387

NET (noise-equivalent temperature) 387

NET, net (network) 384 NF (noise factor) 387

NFB (negative feedback) 383 NFS (network file system) 385 NI (noninductive) 389

NIIL (neon indicating light) 383

NIPO (negative input, positive output) 383

NIT (neon indicator tube) 383

NIV (no inspection verification)

386

NL, NLT (noise limiter) 387 NLC (nonlinear capacitor) 389

NLCSE (nonlinear charge-sto- rage element) 389

NLE (nonlinear element) 389

NLI (nonlinear interpolating)

389

NLI (nonlinear interpolator)

389

NLP (nonlinear programming)

389

NLR (nonlinear resistor) 389

NLR, NR (nonlinear resistance)

389

NLS (nonlinear system) 389 NM (no message) 386

NM (noise meter) 387

NM, nomag (nonmagnetic) 389

NMI (nonmaskable interrupt)

389

NMRR (normal-mode rejection ratio) 392

NO (normally open) 392

NOC (normally open contact)

392

NODE (noise diode) 387

NOP (no operation) 386

NOT, not (number of turns)

394

Np (neper) 383

NP (number of primary turns)

394

NP (number of secondary turns) 394

NPR (noise power ratio) 387 NR (negative resistance) 383 NR (noise reduction) 387 NR (nonreversible) 390

NRD (negative resistance diode)

383

NRE (negative resistance effect)

383

NRE (negative resistance element) 383

NRS (noise reduction system)

387

NRZ (nonreturn to zero) 390

NRZI (nonreturn to zero inverted) 390

NSC (noise suppression circuit)

387

NSGN (noise generator) 387 NSR (noise-to-signal ratio) 387

NTC (negative temperature coefficient) 383

NTL, NUTL (nonuniform transmission line) 391

O2DFT (odd-time odd-frequen- cy discrete Fourier transform) 399

OB (occupied bandwidth) 398 OB (output buffer) 412

OBO (output backoff) 412

OCR (optical character recognition) 407

ODFT (odd discrete Fourier transform) 399

ODL (optical delay line) 407

OEM (original equipment manufacturer) 410

OG (output generator) 412

________________________________________________________________________________________305

OHW (output highway) 412 OL (on-line) 401

OL (open loop) 403 OL, ovld (overload) 415

OLCA (on-line circuit analysis)

401

OLTF (open loop transfer function) 403

OMS (optoelectronic multiplex switch) 408

ONCE (on-circuit emulation)

400

Op Cd (operation code) 405

OPA (optoelectronic pulse amplifier) 408

op-amp, OA (operational amplifier) 405

OPM (operation per minute)

405

OPND (operand) 403

OPO (optical parametric oscillator) 407

opt (optimum) 408

OR (operating range) 404 OR (ordering register) 409 OR (overall resistance) 413 ORG (origin) 409

ORRT (operational readiness and reliability test) 405

OS (operating system) 404 OS (operational system) 406

OSA (open systems architecture) 403

OSA (overall system attenuation) 413

osc (oscillator) 411

OSI (open systems interconnection) 403

OT (overlay transistor) 415 OtbT (object-to-be-tested) 397

OTF (optical transfer function)

407

OTPROM (one-time-program- mable ROM) 401

overload relay (OR) 415

OXIM (oxide-isolated monolith)

415

P (permeance) 429 p (plate) 436

p, pwr (power) 443 P/S (parallel/series) 420 Pa (pascal) 423

PA, paramp (parametric amplifier) 421

PAC (partitioned adaptive control) 423

PAD (packet assembly and disassembly) 416

PAM (partitioned access method) 423

PAM (personal applications manager) 429

PAO (pulsed avalanche(-diode) oscillator) 469

PC (parity control) 422

PC (peripheral controller) 428 PC (personal computer) 429 PC (printed circuit) 451

PC, P-counter (program counter) 458

PCB (printed circuit board) 451

PCCB (programming chip configuration byte) 462

PCI (photon-coupled isolator)

431

PCI (photon-coupled transistor) 432

PCI (polycrystal isolation) 438

PCL (parallel communication link) 420

PCM (predicative pulse code modulation) 445

PCM (pulse code modulation)

468

PCN (personal computer network) 429

PCP (primary control program) 449

306________________________________________________________________________________________

PCS (print contrast signal) 450

PCU (peripheral control unit)

428

PD (photodiode) 431

PD (potential difference) 442 pd (pulse duration) 468

PDA (pulse distribution amplifier) 468

PDA (push-down automaton)

471

PDBM (pulse-delay binary modulation) 469

PDC (parallel data controller)

420

PDL (program design language) 459

PDM (pulse-duration modulation) 469

PDN (public data network) 468

PDS (program development system) 459

PE (phase encoding) 430 PE (photoelectric) 431

PEA (positive electron affinity)

441

PEC (packaged electronic circuit) 416

PEC (photoelectric cell) 431

PED (photon-enhanced diffusion) 432

PEF (prediction-error filter)

445

pel (picture element) 433

PEM (photoelectric memory)

431

PEM (photoelectromagnetic)

431

PEP (peak envelope power) 425

PERT (Project Evaluation and Review Technique) 463

PF (parity formation) 422 PF (pulse former) 468

PFC (phase-frequency characteristic) 430

PFC (power factor corrector)

443

PFD (power flux density) 443

PFM (pulse-frequency modulation) 469

PFN (pulse-forming network)

469

PG (power gain) 443 PG (processing gain) 459

PI (position indicator) 440

PIA (peripherical interface adapter) 428

PIC (peripherical interface channel) 429

PIC (programmable interrupt controller) 461

PIM (pulse interval modulation) 469

PINO (positive input, negative output) 441

PIO (parallel input-output) 420

PIO (programmable inputoutput chip) 461

PIP (peripheral interchange program) 428

PIP (programmed interconnection pattern) 461

PIPLSIC (programmed interconnection pattern large-scale integration circuit) 461

PIPO (parallel in parallel out)

420

PISO (parallel in serial out) 420

PIU (peripherical interface unit) 429

PIV (peak inverse voltage) 426

PLA (programmable logic array) 461

PLC (programmed logic controller) 462

PLD (phase-locked demodulator) 430

PLD (pulse length discriminator) 469

________________________________________________________________________________________307

PLI (piecewise-linear interpolator) 434

PLL (phase-locked loop) 430

PLO (phase-locked oscillator)

431

PM (permanent magnet) 429 PM (phase modulation) 430

PMA (protected memory address) 466

PMD (postmortem dump) 442

PME (photomagnetoelectric)

431

PMT (photomultiplier tube)

431

PN (pseudonoise) 467

PndB (perceived noise decibel)

426

PO (power output) 443 POE (point of entry) 437

POL (problem-oriented language) 454

POS terminal (point-of-sale terminal) 440

pot (potentiometer) 442 pp (pulse pair) 469

PPBM (pulse-polarization binary modulation) 469

PPI (plan-position indicator)

435

PPM (peak program meter)

426

PPM (pulse-position modulation) 469

PPP (peak pulse power) 426 pps (pictures per second) 433 PR (polarized relay) 437

PR (pseudorandom) 467 PR (pulse rate) 469

PRBS (pseudorandom binary sequency) 467

PRC (peak rectified current)

426

prf (pulse repetition frequency)

469

PRFI (pulse repetition rate (frequency)) 469

pri (primary) 245

PRISE (program for integrated shipboard electronics) 459

PRK (phase-reversal keying)

431

Prolog (programming in logic)

464

PROM (programmable read only memory) 461

PRV (peak reverse voltage) 426 PS (power supply) 443

PSA (protected storage address) 466

PSD (phase-sensitive detector)

431

PSD (power spectrum density)

443

PSE (programming support environment) 462

PSK (phase shift keying) 430

PSL/PSA (problem statement language / problem statement analyzer) 454

PSN (packet switching network) 416

PSNR (power signal-to-noise ratio) 443

PSO (parametric subharmonic oscillator) 421

PSU (power supply unit) 443 PSW (process status word) 456

PSW (processor status word)

456

PSW (program status word)

460

PTC (positive temperature coefficient) 441

PTH (plated-through hole) 436

PTM (pulse-time modulation)

469

PTS (peripheral transaction server) 428

308________________________________________________________________________________________

PUT (programmable unijunction transistor) 461

PW (printed wiring) 451 PW (pulse width) 469

PWD (pulse-width discriminator) 470

PWM (pulse width modulation)

469

PWM (pulse-width modulator)

469

PZT (piezoelectric transducer)

434

Q (quantity) 472

Q, qlty,qual (quality) 472 QA (quality assurance) 472

QAGC, qagc (quiet automatic gain control) 475

QBE (query by example) 473 QC (quality control) 472 QC (quartz crystal) 473

QCB (queue control block) 474 QD (quick disconnect) 475

QDM (quick disconnector miniature) 475

QF (quality factor) 472

QFM (quantizer frequency modulation) 473

QISAM (queued indexed sequential access method) 474

QRC (quick reaction capability) 475

QSAM (queued sequential access method) 474

QTAM (queued telecommunication access method) 474

qtz (quartz)

QUAM (quadrature amplitude modulation) 471

quenching (Q) 473

quiet automatic volume control (QAVC) 475

RACE (random-access computer equipment) 478

RADAS (random-access discre- te-address system) 478

RADSIM (random-access dis- crete-address system simulation)

478

RALU (register ALU) 492

RAM (random-access memory)

478

RAM (read-access memory)

482

RAVR (receiver) 485

RB (return-to-bias) 506

RBE (relative biological effectiveness) 494

RC (remote control) 497 RC (return on carry) 505

RCDTL (resistor-capacitor di- ode-transistor logic) 502

RCE (remote control equipment) 497

RCTL (resistor-capacitor transistor logic) 502

RCTL (resistor-coupled transistor logic) 502

read-only memory (ROM) 482

REPROM reprogrammable read-only memory () 500

return-to-zero (RTZ, RZ) 506 RF (reference frequency) 490

RFA (radio-frequency amplifier) 476

RFC (radio-frequency choke)

476

RFI (radio-frequency interference) 476

RHP (right hand plane) 507

RISC (reduced instruction set computer architecture) 488

RISC (reduced instruction set computer) 488

RJE (remote job entry) 498 RM (return on minus) 505 RMM (read-mostly mode) 482 RMS (rod memory system) 508