Микросхемотехника / amelina_m_a_amelin_s_a_programma_shemotehnicheskogo_modeliro
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11. Ɇɨɞɟɥɢ ɷɥɟɤɬɪɨɧɧɵɯ ɤɨɦɩɨɧɟɧɬɨɜ ɢ ɜɵɱɢɫɥɟɧɢɟ ɢɯ ɩ ɪ ɦɟɬɪɨɜ |
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VC = VCC – VPS; VE = –VEE + VNS.
ɍɪɚɜɧɟɧɢɹ ɞɥɹ ɭɩɪɚɜɥɹɟɦɵɯ ɢɫɬɨɱɧɢɤɨɜ
I(GA) = GA (V(A1)–V(A2));
I(GCM)= GCM V(CM);
I(F1) = GB I(VS1)–GB I(VC)+GB I(VE)+GB I(VLP)–GB I(VLN);
V(E1) V(VCC) V(VEE) ;
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V(H1) = 1000 (I(VS2));
V(VS1)= 0.0 (ɂɫɩɨɥɶɡɭɟɬɫɹ ɬɨɥɶɤɨ ɞɥɹ ɢɡɦɟɪɟɧɢɹ ɬɨɤ );
V(VS2)= 0.0 (ɂɫɩɨɥɶɡɭɟɬɫɹ ɬɨɥɶɤɨ ɞɥɹ ɢɡɦɟɪɟɧɢɹ ɬɨɤ ).
Ɉɬɦɟɬɢɦ, ɱɬɨ ɦɨɞɟɥɢ LEVEL 2 ɢ LEVEL 3 ɢɫɩɨɥɶɡɭɸɬ ɜɯɨɞɧɨɣ ɩɚɪɚɦɟɬɪ GBW, ɧɚɡɵɜɚɟɦɵɣ ɩɥɨɳɚɞɶɸ ɭɫɢɥɟɧɢɹ — ɩɪɨɢɡɜɟɞɟɧɢɟ ɩɨɥɨɫɵ ɩɪɨɩɭɫɤɚɧɢɹ ɧɚ ɤɨɷɮɮɢɰɢɟɧɬ ɭɫɢɥɟɧɢɹ. ɋɨɨɬɜɟɬɫɬɜɭɸɳɚɹ ɦɨɞɟɥɶ ɨɩɟɪɚɰɢɨɧɧɨɝɨ ɭɫɢɥɢ- ɬɟɥɹ ɛɭɞɟɬ ɢɦɟɬɶ ɧɚ ɱɚɫɬɨɬɟ F=GBW ɩɪɢ ɪɚɡɨɦɤɧɭɬɨɣ ɰɟɩɢ ɨɛɪɚɬɧɨɣ ɫɜɹɡɢ ɡɚɩɚɫ ɩɨ ɮɚɡɟ ɪɚɜɧɵɣ PM ɢ ɤɨɷɮɮɢɰɢɟɧɬ ɭɫɢɥɟɧɢɹ -3.01 ɞȻ. ɉɪɢ ɷɬɨɦ ɩɟɪɟ- ɫɟɱɟɧɢɟ ɚɫɢɦɩɬɨɬɵ ɫɪɟɞɧɟɣ ɱɚɫɬɢ Ʌ ɑɏ (ɫ ɧɚɤɥɨɧɨɦ -20 ɞȻ/ɞɟɤ) ɫ ɩɪɹɦɨɣ ɥɢɧɢɟɣ F=GBW ɩɪɨɢɫɯɨɞɢɬ ɜ ɬɨɱɤɟ 0,0 ɞȻ.
ɋɥɟɞɭɟɬ ɨɬɦɟɬɢɬɶ, ɱɬɨ ɩɚɪɚɦɟɬɪ ɡɚɩɚɫ ɩɨ ɮɚɡɟ PM ɫɜɹɡɚɧ ɫ ɮɚɡɨɜɵɦ ɫɞɜɢɝɨɦ PHA ɜɵɯɨɞɧɨɝɨ ɧɚɩɪɹɠɟɧɢɹ ɫɥɟɞɭɸɳɢɦ ɨɛɪɚɡɨɦ:
PM = PHA + 180q.
ɋɥɟɞɨɜɚɬɟɥɶɧɨ, ɞɥɹ ɬɨɝɨ ɱɬɨɛɵ ɩɨɫɬɪɨɢɬɶ ɡɚɩɚɫ ɩɨ ɮɚɡɟ PM ɜ ɪɟɠɢɦɟ AC ɚɧɚɥɢɡɚ ɧɟɨɛɯɨɞɢɦɨ ɜ ɤɚɱɟɫɬɜɟ Y eɯpression ɢɫɩɨɥɶɡɨɜɚɬɶ ɜɵɪɚɠɟɧɢɟ
PH(V(OUT)) + 180.
11.6.4. Ɉɩɪɟɞɟɥɟɧɢɟ ɩɚɪɚɦɟɬɪɨɜ ɦɨɞɟɥɢ ɨɩɟɪɚɰɢɨɧɧɨɝɨ ɭɫɢɥɢɬɟɥɹ
ɉɪɨɝɪɚɦɦɚ MODEL ɧɟ ɫɬɪɨɢɬ ɤɚɤɢɯ-ɥɢɛɨ ɝɪɚɮɢɤɨɜ ɯɚɪɚɤɬɟɪɢɫɬɢɤ ɨɩɟɪɚ- ɰɢɨɧɧɵɯ ɭɫɢɥɢɬɟɥɟɣ (Ɉɍ). ɉɨɥɶɡɨɜɚɬɟɥɶ ɧɚ ɬɪɟɯ ɷɤɪɚɧɚɯ ɜɜɨɞɢɬ ɩɚɫɩɨɪɬɧɵɟ ɞɚɧɧɵɟ Ɉɍ, ɧɚ ɨɫɧɨɜɚɧɢɢ ɤɨɬɨɪɵɯ ɪɚɫɫɱɢɬɵɜɚɸɬɫɹ (ɜɜɨɞɹɬɫɹ) ɩɚɪɚɦɟɬɪɵ ɟɝɨ ɦɚɤɪɨɦɨɞɟɥɢ (ɬɚɛɥ. 11.12).
Ɍ ɚ ɛ ɥ ɢ ɰ ɚ 1 1 . 1 2 . ɗɤɪɚɧɵ ɩɪɨɝɪɚɦɦɵ MODEL ɞɥɹ ɨɩɪɟɞɟɥɟɧɢɹ ɩɚɪɚɦɟɬɪɨɜ
ɦɨɞɟɥɢ ɨɩɟɪɚɰɢɨɧɧɨɝɨ ɭɫɢɥɢɬɟɥɹ
ɗɤɪɚɧ 1
ȼɜɨɞɹɬɫɹ ɡɧɚɱɟɧɢɹ ɩɚɪɚɦɟɬɪɨɜ, ɨɩɬɢɦɢɡɚɰɢɹ ɧɟ ɩɪɨɢɡɜɨɞɢɬɫɹ: LEVEL — ɬɢɩ ɦɨɞɟɥɢ, ɜɫɟɝɞɚ ɧɚɡɧɚɱɚɟɬɫɹ ɬɢɩ 3;
TYPE — ɬɢɩ ɜɯɨɞɧɵɯ ɬɪɚɧɡɢɫɬɨɪɨɜ: 1 – NPN, 2 – PNP, 3 – NJFET; ȼɯɨɞɧɵɟ ɋ – ɟɦɤɨɫɬɶ ɤɨɪɪɟɤɰɢɢ (30 ɩɎ);
ɞɚɧɧɵɟ Ⱥ – ɤɨɷɮɮɢɰɢɟɧɬ ɭɫɢɥɟɧɢɹ ɧɚ ɩɨɫɬɨɹɧɧɨɦ ɬɨɤɟ (200K); ROUTAC — ɜɵɯɨɞɧɨɟ ɫɨɩɪɨɬɢɜɥɟɧɢɟ ɩɟɪɟɦɟɧɧɨɦɭ ɬɨɤɭ (75 Ɉɦ); ROUTDC — ɜɵɯɨɞɧɨɟ ɫɨɩɪɨɬɢɜɥɟɧɢɟ ɩɨɫɬɨɹɧɧɨɦɭ ɬɨɤɭ (125 Ɉɦ); VOFF — ɧɚɩɪɹɠɟɧɢɟ ɫɦɟɳɟɧɢɹ ɧɭɥɹ (1 ɦȼ)
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ɉɪɨɝɪ ɦɦ ɫɯɟɦɨɬɟɯɧɢɱɟɫɤɨɝɨ ɦɨɞɟɥɢɪɨɜ ɧɢɹ Micro-Cap. ȼɟɪɫɢɢ 9, 10 |
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Ɉɤɨɧɱɚɧɢɟ ɬɚɛɥ. 11.12 |
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ɗɤɪɚɧ 2 |
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ȼɜɨɞɹɬɫɹ ɡɧɚɱɟɧɢɹ ɩɚɪɚɦɟɬɪɨɜ, ɨɩɬɢɦɢɡɚɰɢɹ ɧɟ ɩɪɨɢɡɜɨɞɢɬɫɹ: |
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IOFF — ɪɚɡɧɨɫɬɶ ɜɯɨɞɧɵɯ ɬɨɤɨɜ ɫɦɟɳɟɧɢɹ (1 ɧ ); |
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SRP — ɦɚɤɫɢɦɚɥɶɧɚɹ ɫɤɨɪɨɫɬɶ ɧɚɪɚɫɬɚɧɢɹ ɜɵɯɨɞɧɨɝɨ ɧɚɩɪɹɠɟɧɢɹ |
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(5 105 ȼ/ɫ); |
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SRN — ɦɚɤɫɢɦɚɥɶɧɚɹ ɫɤɨɪɨɫɬɶ ɫɩɚɞɚ ɜɵɯɨɞɧɨɝɨ ɧɚɩɪɹɠɟɧɢɹ (5 10 |
ȼ/ɫ); |
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IBIAS — ɜɯɨɞɧɨɣ ɬɨɤ ɫɦɟɳɟɧɢɹ (0,1 ɦɤ ); |
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VEE — ɧɚɩɪɹɠɟɧɢɟ ɨɬɪɢɰɚɬɟɥɶɧɨɝɨ ɩɢɬɚɧɢɹ (–15 ȼ); |
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VCC — ɧɚɩɪɹɠɟɧɢɟ ɩɨɥɨɠɢɬɟɥɶɧɨɝɨ ɩɢɬɚɧɢɹ (15 ȼ); |
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VPS — ɦɚɤɫɢɦɚɥɶɧɨɟ ɜɵɯɨɞɧɨɟ ɩɨɥɨɠɢɬɟɥɶɧɨɟ ɧɚɩɪɹɠɟɧɢɟ (13 ȼ) |
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ɗɤɪɚɧ 3 |
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ȼɜɨɞɹɬɫɹ ɡɧɚɱɟɧɢɹ ɩɚɪɚɦɟɬɪɨɜ, ɨɩɬɢɦɢɡɚɰɢɹ ɧɟ ɩɪɨɢɡɜɨɞɢɬɫɹ: |
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VNS — ɦɚɤɫɢɦɚɥɶɧɨɟ ɜɵɯɨɞɧɨɟ ɨɬɪɢɰɚɬɟɥɶɧɨɟ ɧɚɩɪɹɠɟɧɢɟ (–13 ȼ); |
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CMRR — ɤɨɷɮɮɢɰɢɟɧɬ ɩɨɞɚɜɥɟɧɢɹ ɫɢɧɮɚɡɧɨɝɨ ɫɢɝɧɚɥɚ (105); |
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GBW — ɩɥɨɳɚɞɶ ɭɫɢɥɟɧɢɹ (ɪɚɜɧɚ ɩɪɨɢɡɜɟɞɟɧɢɸ ɤɨɷɮɮɢɰɢɟɧɬɚ ɭɫɢɥɟ- |
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ɧɢɹ ɧɚ ɱɚɫɬɨɬɭ ɩɟɪɜɨɝɨ ɩɨɥɸɫɚ) (106 Ƚɰ); |
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ɊɆ — ɡɚɩɚɫ ɩɨ ɮɚɡɟ ɧɚ ɱɚɫɬɨɬɟ ɟɞɢɧɢɱɧɨɝɨ ɭɫɢɥɟɧɢɹ, ɝɪɚɞ. (60); |
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PD — ɩɨɬɪɟɛɥɹɟɦɚɹ ɦɨɳɧɨɫɬɶ (25 ɦȼɬ); |
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IOSC — ɜɵɯɨɞɧɨɣ ɬɨɤ ɤɨɪɨɬɤɨɝɨ ɡɚɦɵɤɚɧɢɹ (20 ɦ ) |
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ɉɪɢɦɟɱɚɧɢɟ. ȼ ɫɤɨɛɤɚɯ ɭɤɚɡɚɧɵ ɡɧɚɱɟɧɢɹ ɩɨ ɭɦɨɥɱɚɧɢɸ
11.7.Ⱥɪɫɟɧɢɞ-ɝɚɥɥɢɟɜɵɟ ɩɨɥɟɜɵɟ ɬɪɚɧɡɢɫɬɨɪɵ GaAsFET
11.7.1.Ɇɨɞɟɥɶ ɚɪɫɟɧɢɞ-ɝɚɥɥɢɟɜɨɝɨ ɩɨɥɟɜɨɝɨ ɬɪɚɧɡɢɫɬɨɪɚ
Ɏɨɪɦɚɬ SPICE
B<ɢɦɹ> <ɫɬɨɤ> <ɡɚɬɜɨɪ> <ɢɫɬɨɤ> <ɢɦɹ ɦɨɞɟɥɢ> [area] [OFF] [IC=<vds>[,vgs]]
ɉɪɢɦɟɪ:
B1 5 7 9 2N3531 1 OFF IC=1.0,2.5
Ɏɨɪɦɚɬ ɫɯɟɦ Micro-Cap |
GaAsFET |
xɬɪɢɛɭɬ PART <ɢɦɹ>
ɉɪɢɦɟɪ: |
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B1 |
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B1 |
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xɬɪɢɛɭɬ VALUE [area] [OFF] [IC=<vds>[,vgs]]
ɉɪɢɦɟɪ |
Ɋɢɫ. 11.18 |
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1.5 OFF IC=0.05,1.00 |
ɪɫɟɧɢɞ-ɝɚɥɥɢɟɜɵɣ |
x ɬɪɢɛɭɬ MODEL <ɢɦɹ ɦɨɞɟɥɢ> |
ɩɨɥɟɜɨɣ ɬɪɚɧɡɢɫɬɨɪ |
ɉɪɢɦɟɪ: |
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GFX_01 |
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ɉɪɢɛɨɪ ɹɜɥɹɟɬɫɹ n-ɤɚɧɚɥɶɧɵɦ. ɇɟɬ ɪɚɡɧɨɜɢɞɧɨɫɬɟɣ ɫ ɤɚɧɚɥɨɦ p-ɬɢɩɚ. LEVEL 1 ɫɩɟɰɢɮɢɰɢɪɭɟɬ ɦɨɞɟɥɶ Ʉɭɪɬɢɫɚ, LEVEL 2 — ɦɨɞɟɥɶ Ɋɷɣɬɟɨɧɚ ɢɥɢ ɋɬɚɰɚ, LEVEL 3 — ɦɨɞɟɥɶ Ɍɪɢɤɜɢɧɬɚ. Ʉɥɸɱɟɜɨɟ ɫɥɨɜɨ OFF ɨɬɤɥɸɱɚɟɬ ɩɪɢɛɨɪ
ɨɬ ɫɯɟɦɵ ɧɚ ɩɟɪɜɨɣ ɢɬɟɪɚɰɢɢ ɜɵɱɢɫɥɟɧɢɹ ɪɚɛɨɱɟɣ ɬɨɱɤɢ ɩɨ ɩɨɫɬɨɹɧɧɨɦɭ ɬɨɤɭ (Operating point). ȼɜɨɞ ɧɚɱɚɥɶɧɵɯ ɭɫɥɨɜɢɣ ɫ ɩɨɦɨɳɶɸ [IC=Vds[,Vgs]] ɩɪɢɫɜɚɢ- ɜɚɟɬ ɧɚɱɚɥɶɧɵɟ ɡɧɚɱɟɧɢɹ ɧɚɩɪɹɠɟɧɢɹɦ ɫɬɨɤ-ɢɫɬɨɤ ɢ ɡɚɬɜɨɪ-ɢɫɬɨɤ.
11. Ɇɨɞɟɥɢ ɷɥɟɤɬɪɨɧɧɵɯ ɤɨɦɩɨɧɟɧɬɨɜ ɢ ɜɵɱɢɫɥɟɧɢɟ ɢɯ ɩ ɪ ɦɟɬɪɨɜ |
523 |
Ɏɨɪɦɚɬ ɬɟɤɫɬɨɜɨɣ ɞɢɪɟɤɬɢɜɵ ɦɨɞɟɥɢ ɚɪɫɟɧɢɞ-ɝɚɥɥɢɟɜɨɝɨ ɩɨɥɟɜɨɝɨ ɬɪɚɧɡɢɫɬɨɪɚ:
.MODEL <ɢɦɹ ɦɨɞɟɥɢ> GASFET([ɩɚɪɚɦɟɬɪɵ ɦɨɞɟɥɢ])
ɉɪɢɦɟɪ:
.MODEL B1 GASFET (VTO=-2 ALPHA=2 BETA=1E-4 LAMBDA=1E-3)
11.7.2.ɉɚɪɚɦɟɬɪɵ ɦɨɞɟɥɢ ɚɪɫɟɧɢɞ-ɝɚɥɥɢɟɜɨɝɨ ɩɨɥɟɜɨɝɨ ɬɪɚɧɡɢɫɬɨɪɚ
Ɍɚ ɛ ɥ ɢ ɰ ɚ 1 1 . 1 3 . ɉɚɪɚɦɟɬɪɵ ɦɨɞɟɥɢ ɚɪɫɟɧɢɞ-ɝɚɥɥɢɟɜɨɝɨ ɩɨɥɟɜɨɝɨ
ɬɪɚɧɡɢɫɬɨɪɚ
Ɉɛɨɡɧɚɱɟɧɢɟ |
LEVEL |
ɋɨɞɟɪɠɚɧɢɟ |
Ɂɧɚɱɟɧɢɟɩɨ ɭɦɨɥɱɚɧɢɸ |
ȿɞɢɧɢɰɚ ɢɡɦɟɪɟɧɢɹ |
AREA |
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LEVEL |
1–3 |
Ɍɢɩ ɦɨɞɟɥɢ: 1 — ɦɨɞɟɥɶ Ʉɭɪɬɢɫɚ, 2 — |
1 |
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ɦɨɞɟɥɶ Ɋɷɣɬɟɨɧɚ, 3 — ɦɨɞɟɥɶ TriQuint |
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VTO |
1–3 |
Ȼɚɪɶɟɪɧɵɣ ɩɨɬɟɧɰɢɚɥ ɩɟɪɟɯɨɞɚ ɒɨɬɬɤɢ |
–2.5 |
ȼ |
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ɢɥɢ ɩɨɪɨɝɨɜɨɟ ɧɚɩɪɹɠɟɧɢɟ |
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ALPHA |
1–3 |
Ʉɨɷɮɮɢɰɢɟɧɬ ɞɥɹ ɧɚɩɪɹɠɟɧɢɹ ɧɚɫɵɳɟ- |
2.0 |
1/ȼ |
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ɧɢɹ ɬɨɤɚ ɫɬɨɤɚ |
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ɍɞɟɥɶɧɚɹ ɤɪɭɬɢɡɧɚ (ɭɞɟɥɶɧɚɹ ɩɟɪɟɞɚɬɨɱ- |
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2 |
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BETA |
1–3 |
ɧɚɹ ɩɪɨɜɨɞɢɦɨɫɬɶ) |
0.1 |
/ȼ |
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ȼ |
2 |
ɉɚɪɚɦɟɬɪ ɥɟɝɢɪɨɜɚɧɢɹ |
0.3 |
1/ȼ |
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LAMBDA |
1–3 |
ɉɚɪɚɦɟɬɪ ɦɨɞɭɥɹɰɢɢ ɞɥɢɧɵ ɤɚɧɚɥɚ |
0 |
1/ȼ |
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GAMMA |
3 |
ɉɚɪɚɦɟɬɪ ɫɬɚɬɢɱɟɫɤɨɣ ɨɛɪɚɬɧɨɣ ɫɜɹɡɢ |
0 |
— |
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DELTA |
3 |
ɉɚɪɚɦɟɬɪ ɜɵɯɨɞɧɨɣ ɨɛɪɚɬɧɨɣ ɫɜɹɡɢ |
0 |
( ȼ)-1 |
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Q |
3 |
ɉɨɤɚɡɚɬɟɥɶ ɫɬɟɩɟɧɢ |
2 |
— |
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RG |
1–3 |
Ɉɛɴɟɦɧɨɟ ɫɨɩɪɨɬɢɜɥɟɧɢɟ ɨɛɥɚɫɬɢ ɡɚɬɜɨɪɚ |
0 |
Ɉɦ |
e |
RD |
1–3 |
Ɉɛɴɟɦɧɨɟ ɫɨɩɪɨɬɢɜɥɟɧɢɟ ɨɛɥɚɫɬɢ ɫɬɨɤɚ |
0 |
Ɉɦ |
e |
RS |
1–3 |
Ɉɛɴɟɦɧɨɟ ɫɨɩɪɨɬɢɜɥɟɧɢɟ ɨɛɥɚɫɬɢ ɢɫɬɨɤɚ |
0 |
Ɉɦ |
e |
IS |
1–3 |
Ɍɨɤ ɧɚɫɵɳɟɧɢɹ ɪ-n-ɩɟɪɟɯɨɞɚ ɡɚɬɜɨɪ-ɤɚɧɚɥ |
1E-14 |
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N |
1–3 |
Ʉɨɷɮɮɢɰɢɟɧɬ ɷɦɢɫɫɢɢ p-n-ɩɟɪɟɯɨɞɚ ɡɚ- |
1 |
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M |
1–3 |
Ʉɨɷɮɮɢɰɢɟɧɬ ɩɥɚɜɧɨɫɬɢ p-n-ɩɟɪɟɯɨɞɚ |
0.5 |
— |
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VBI |
1–3 |
Ʉɨɧɬɚɤɬɧɚɹ ɪɚɡɧɨɫɬɶ ɩɨɬɟɧɰɢɚɥɨɜ ɪ-n- |
1 |
ȼ |
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ɩɟɪɟɯɨɞɚ ɡɚɬɜɨɪɚ |
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CGD |
1–3 |
ȿɦɤɨɫɬɶ ɡɚɬɜɨɪ-ɫɬɨɤ ɩɪɢ ɧɭɥɟɜɨɦ ɫɦɟ- |
0 |
Ɏ |
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CGS |
1–3 |
ȿɦɤɨɫɬɶ ɡɚɬɜɨɪ-ɢɫɬɨɤ ɩɪɢ ɧɭɥɟɜɨɦ ɫɦɟ- |
0 |
Ɏ |
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CDS |
1–3 |
ȿɦɤɨɫɬɶ ɫɬɨɤ-ɢɫɬɨɤ ɮɢɤɫɢɪɨɜɚɧɧɚɹ |
0 |
Ɏ |
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Ʉɨɷɮɮɢɰɢɟɧɬ ɧɟɥɢɧɟɣɧɨɫɬɢ ɛɚɪɶɟɪɧɨɣ |
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FC |
1–3 |
ɟɦɤɨɫɬɢ ɩɪɹɦɨɫɦɟɳɟɧɧɨɝɨ p-n-ɩɟɪɟɯɨɞɚ |
0.5 |
— |
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ɡɚɬɜɨɪɚ |
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VDELTA |
2, 3 |
ɇɚɩɪɹɠɟɧɢɟ, ɜɯɨɞɹɳɟɟ ɜ ɜɵɪɚɠɟɧɢɹ ɞɥɹ |
0.2 |
ȼ |
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ɟɦɤɨɫɬɟɣ ɩɟɪɟɯɨɞɨɜ |
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ɉɪɨɝɪ ɦɦ ɫɯɟɦɨɬɟɯɧɢɱɟɫɤɨɝɨ ɦɨɞɟɥɢɪɨɜ ɧɢɹ Micro-Cap. ȼɟɪɫɢɢ 9, 10 |
Ɉɛɥɚɫɬɶ ɥɢɧɟɣɧɨɝɨ ɪɟɠɢɦɚ ɢ ɪɟɠɢɦɚ ɧɚɫɵɳɟɧɢɹ (Vgs > VTO(T)):
Id=BETA(T) (1+LAMBDA Vds) (Vgs–VTO(T))2 tanh(ALPHA Vds).
ɍɪɚɜɧɟɧɢɹ ɞɥɹ ɬɨɤɨɜ ɦɨɞɟɥɢ LEVEL 2
Ɉɛɥɚɫɬɶ ɨɬɫɟɱɤɢ (Vgs VTO(T)):
Id = 0
Ɉɛɥɚɫɬɶ ɥɢɧɟɣɧɨɝɨ ɪɟɠɢɦɚ ɢ ɪɟɠɢɦɚ ɧɚɫɵɳɟɧɢɹ (Vgs > VTO(T)):
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Vds |
ALPHA ·3 |
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Vds |
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BETA(T) 1 |
LAMBDA Vds Vgs-VTO(T) 2 |
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B (Vgs VTO(T)) |
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ɍɪɚɜɧɟɧɢɹ ɞɥɹ ɬɨɤɨɜ ɦɨɞɟɥɢ LEVEL 3 |
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Ɉɛɥɚɫɬɶ ɨɬɫɟɱɤɢ (Vgs VTO(T)): |
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Id=0 |
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Ɉɛɥɚɫɬɶ ɥɢɧɟɣɧɨɝɨ ɪɟɠɢɦɚ ɢ ɪɟɠɢɦɚ ɧɚɫɵɳɟɧɢɹ (Vgs > VTO(T)): |
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ɂɧɚɱɟ Kt = 1
Idso = BETA (Vgs–(VTO–GAMMA Vds))Q Kt
Idso
Id
1 DELTA Vds Idso
ɍɪɚɜɧɟɧɢɹ ɞɥɹ ɟɦɤɨɫɬɟɣ ɦɨɞɟɥɢ LEVEL 1
ȿɫɥɢ |
Vgs FC VBI(T), |
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FC(1 |
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Vds FC VBI(T), |
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11. Ɇɨɞɟɥɢ ɷɥɟɤɬɪɨɧɧɵɯ ɤɨɦɩɨɧɟɧɬɨɜ ɢ ɜɵɱɢɫɥɟɧɢɟ ɢɯ ɩ ɪ ɦɟɬɪɨɜ |
527 |
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ɍɪɚɜɧɟɧɢɹ ɞɥɹ ɟɦɤɨɫɬɟɣ ɦɨɞɟɥɢ LEVEL 2 ɢ LEVEL 3 |
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Ve |
Vgs |
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Vgd |
((Vgs Vgd)2 |
ALPHA 2 )2 |
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VTO(T) Ve VTO(T) 2 |
DELTA2 |
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Ve |
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Vn = VMAX |
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2 Ve |
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ɍɪɚɜɧɟɧɢɹ ɞɥɹ ɲɭɦɨɜ ɩɨɥɟɜɨɝɨ ɬɪɚɧɡɢɫɬɨɪɚ GaAsFET
ɉɚɪɚɡɢɬɧɵɟ ɫɨɩɪɨɬɢɜɥɟɧɢɹ RG, RD, ɢ RS, ɝɟɧɟɪɢɪɭɸɬ ɬɨɤɢ ɬɟɩɥɨɜɨɝɨ ɲɭɦɚ:
Ig |
2 4kT |
Id |
2 4kT |
Is |
2 4kT |
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ɂɫɬɨɱɧɢɤ ɬɨɤɚ ɜ ɰɟɩɢ ɫɬɨɤɚ ɝɟɧɟɪɢɪɭɟɬ ɬɟɩɥɨɜɨɣ ɲɭɦ:
|
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I2 |
4 k T gm |
2 |
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KF Id AF |
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, |
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ɝɞɟ gm |
ɞId |
(ɜ ɪɚɛɨɱɟɣ ɬɨɱɤɟ ɩɨ ɩɨɫɬɨɹɧɧɨɦɭ ɬɨɤɭ). |
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ɞVgs |
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528 |
ɉɪɨɝɪ ɦɦ ɫɯɟɦɨɬɟɯɧɢɱɟɫɤɨɝɨ ɦɨɞɟɥɢɪɨɜ ɧɢɹ Micro-Cap. ȼɟɪɫɢɢ 9, 10 |
11.8. Ȼɢɩɨɥɹɪɧɵɣ ɬɪɚɧɡɢɫɬɨɪ ɫ ɢɡɨɥɢɪɨɜɚɧɧɵɦ ɡɚɬɜɨɪɨɦ IGBT
11.8.1. Ɇɨɞɟɥɶ IGBT-ɬɪɚɧɡɢɫɬɨɪɚ
Ɏɨɪɦɚɬ SPICE
Z<ɢɦɹ> <ɡɚɬɜɨɪ> <ɤɨɥɥɟɤɬɨɪ> <ɷɦɢɬɬɟɪ> <ɢɦɹ ɦɨɞɟɥɢ>
+[AREA=<area>] [WB=<base_width>] [AGD=<agd>] [KP=<kp>] [TAU=<tau>]
+[OFF] [IC=[vgs[,vae[,vds[,veb]]]]]
ɉɪɢɦɟɪɵ: |
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IGBT |
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Z1 1 2 0 IXGH10N170 |
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Collector |
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+ AREA=1E-4 WB=100U AGD=.1N KP=1E-5 |
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+ TAU=100N OFF IC=1,2,3,4 |
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Ɏɨɪɦɚɬ ɫɯɟɦ Micro-Cap |
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Ɋɢɫ. 11.20 |
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x ɬɪɢɛɭɬ PART <ɢɦɹ> |
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ɉɪɢɦɟɪ: |
IGBT-ɬɪɚɧɡɢɫɬɨɪ |
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xɬɪɢɛɭɬ VALUE AREA=<area>] [WB=<base_width>] [AGD=<agd>] [KP=<kp>]
[TAU=<tau>] [OFF] [IC=[vgs[,vae[,vds[,veb]]]]]
ɉɪɢɦɟɪ: AREA=2E-7 WB=10u
x ɬɪɢɛɭɬ MODEL <ɢɦɹ ɦɨɞɟɥɢ>
ɉɪɢɦɟɪ: IXGH10N170
Ɇɨɞɟɥɶ ɷɬɨɝɨ ɩɪɢɛɨɪɚ ɛɚɡɢɪɭɟɬɫɹ ɧɚ ɪɟɚɥɢɡɚɰɢɢ Ƚɪɟɝɨɪɢ Ɉɡɢɟɦɤɟɜɢɱɚ (Gregory Oziemkiewicz) ɦɨɞɟɥɢ IGBT, ɨɫɧɨɜɚɧɧɨɣ ɧɚ ɦɨɞɟɥɢ ɥɥɟɧɚ ɏɟɮɧɟɪɚ (Allen R. Hefner) ɢɡ ɧɚɰɢɨɧɚɥɶɧɨɝɨ ɂɧɫɬɢɬɭɬɚ ɫɬɚɧɞɚɪɬɨɜ ɢ ɬɟɯɧɨɥɨɝɢɣ
(National Institute of Standards and Technology). ɇɚɡɜɚɧɢɹ ɩɚɪɚɦɟɬɪɨɜ, ɡɧɚɱɟ-
ɧɢɹ ɩɨ ɭɦɨɥɱɚɧɢɸ ɢ ɟɞɢɧɢɰɵ ɢɡɦɟɪɟɧɢɹ ɫɨɜɦɟɫɬɢɦɵ ɫ ɛɨɥɶɲɢɧɫɬɜɨɦ ɜɟɪɫɢɣ ɷɬɨɣ ɠɟ ɫɚɦɨɣ ɦɨɞɟɥɢ ɧɚ ɹɡɵɤɟ SPICE.
ɬɪɢɛɭɬɵ <area>, <base_width>, <agd>, <kp>, ɢ <tau>, ɟɫɥɢ ɭɤɚɡɵɜɚɸɬ-
ɫɹ, ɬɨ ɩɪɟɞɲɟɫɬɜɭɸɬ ɦɨɞɟɥɶɧɵɦ ɩɚɪɚɦɟɬɪɚɦ ɫ ɬɟɦɢ ɠɟ ɫɚɦɵɦɢ ɢɦɟɧɚɦɢ.
Ʉɥɸɱɟɜɨɟ ɫɥɨɜɨ [OFF] ɩɪɢɜɨɞɢɬ ɤ ɨɬɤɥɸɱɟɧɢɸ ɩɪɢɛɨɪɚ ɜ ɬɟɱɟɧɢɟ ɩɟɪɜɨɣ ɢɬɟɪɚɰɢɢ ɪɚɫɱɟɬɚ ɪɟɠɢɦɚ ɩɨ ɩɨɫɬɨɹɧɧɨɦɭ ɬɨɤɭ. ɇɚɱɚɥɶɧɵɟ ɭɫɥɨɜɢɹ, ɡɚɞɚ- ɜɚɟɦɵɟ ɤɚɤ IC=[vgs[,vae[,vds[,veb]]]], ɩɪɢɫɜɚɢɜɚɸɬ ɧɚɱɚɥɶɧɵɟ ɧɚɩɪɹɠɟɧɢɹ ɜɧɟɲɧɢɦ ɜɵɜɨɞɚɦ ɦɨɞɟɥɢ ɩɪɢɛɨɪɚ.
Ⱦɨɩɨɥɧɢɬɟɥɶɧɚɹ ɢɧɮɨɪɦɚɰɢɹ ɩɨ ɦɨɞɟɥɹɦ IGBT ɧɚɯɨɞɢɬɫɹ ɜ ɫɥɟɞɭɸɳɢɯ ɢɫɬɨɱɧɢɤɚɯ:
xImplementation and Development of the NIST IGBT Model in a SPICEbased Commercial Circuit Simulator Gregory Todd Oziemkiewicz, Engineer’s Thesis, University of Florida, December 1995.
xModelling Buffer Layer IGBT’s for Circuit Simulation, Allen R. Hefner Jr, IEEE Transactions on Power Electronics, Vol. 10, No. 2, March 1995.
11. Ɇɨɞɟɥɢ ɷɥɟɤɬɪɨɧɧɵɯ ɤɨɦɩɨɧɟɧɬɨɜ ɢ ɜɵɱɢɫɥɟɧɢɟ ɢɯ ɩ ɪ ɦɟɬɪɨɜ |
529 |
xAn Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator, Allen R. Hefner, Jr., Daniel M. Diebolt, IEE Transactions on Power Electronics, Vol. 9, No. 5, September 1994.
Ɏɨɪɦɚɬ ɬɟɤɫɬɨɜɨɣ ɞɢɪɟɤɬɢɜɵ ɦɨɞɟɥɢ IGBT-ɬɪɚɧɡɢɫɬɨɪɚ:
.MODEL <ɢɦɹ ɦɨɞɟɥɢ> NIGBT ([ɩɚɪɚɦɟɬɪɵ ɦɨɞɟɥɢ])
Ɍ ɚ ɛ ɥ ɢ ɰ ɚ 1 1 . 1 4 . ɉɚɪɚɦɟɬɪɵ ɦɨɞɟɥɢ IGBT ɬɪɚɧɡɢɫɬɨɪɚ
Ɉɛɨɡɧɚɱɟɧɢɟ |
ɋɨɞɟɪɠɚɧɢɟ |
Ɂɧɚɱɟɧɢɟɩɨ |
ɭɦɨɥɱɚɧɢɸ |
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AGD |
ɉɥɨɳɚɞɶ ɨɛɥɚɫɬɢ ɩɟɪɟɤɪɵɬɢɹ ɡɚɬɜɨɪ-ɫɬɨɤ |
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5u |
AREA |
ɉɥɨɳɚɞɶ ɩɪɢɛɨɪɚ |
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10u |
BVF |
Ʌɚɜɢɧɧɵɣ ɮɚɤɬɨɪ (Avalanche uniformity factor) |
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1 |
BVN |
Ʉɨɷɮɮɢɰɢɟɧɬ ɥɚɜɢɧɧɨɝɨ ɭɦɧɨɠɟɧɢɹ (ɩɨɤɚɡɚɬɟɥɶ |
4 |
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ɷɤɫɩɨɧɟɧɬɵ) |
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CGS |
ɍɞɟɥɶɧɚɹ ɟɦɤɨɫɬɶ ɡɚɬɜɨɪ-ɢɫɬɨɤ ɧɚ ɟɞɢɧɢɰɭ ɩɥɨ- |
12.4n |
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COXD |
ɍɞɟɥɶɧɚɹ ɟɦɤɨɫɬɶ ɡɚɬɜɨɪ-ɫɬɨɤ ɧɚ ɟɞɢɧɢɰɭ ɩɥɨ- |
35n |
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ɳɚɞɢ |
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JSNE |
ɉɥɨɬɧɨɫɬɶ ɬɨɤɚ ɧɚɫɵɳɟɧɢɹ ɷɦɢɬɬɟɪɚ |
|
650f |
KF |
Ɏɚɤɬɨɪ ɬɪɢɨɞɧɨɣ ɨɛɥɚɫɬɢ |
|
1 |
KP |
ɉɟɪɟɞɚɬɨɱɧɚɹ ɩɪɨɜɨɞɢɦɨɫɬɶ ɆȾɉ-ɫɬɪɭɤɬɭɪɵ |
|
380m |
MUN |
ɉɨɞɜɢɠɧɨɫɬɶ ɷɥɟɤɬɪɨɧɨɜ |
|
1.5K |
MUP |
ɉɨɞɜɢɠɧɨɫɬɶ ɞɵɪɨɤ |
|
450 |
NB |
ɋɬɟɩɟɧɶ ɥɟɝɢɪɨɜɚɧɢɹ ɛɚɡɵ (Base doping) |
|
200T |
T_ABS |
ɛɫɨɥɸɬɧɚɹ ɬɟɦɩɟɪɚɬɭɪɚ |
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— |
T_MEASURED |
Ɍɟɦɩɟɪɚɬɭɪɚ ɢɡɦɟɪɟɧɢɹ |
|
— |
T_REL_GLOBAL |
Ɉɬɧɨɫɢɬɟɥɶɧɚɹ ɬɟɦɩɟɪɚɬɭɪɚ |
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— |
T_REL_LOCAL |
Ɋɚɡɧɨɫɬɶ ɦɟɠɞɭ ɬɟɦɩɟɪɚɬɭɪɨɣ ɬɪɚɧɡɢɫɬɨɪɚ |
ɢ |
— |
ɦɨɞɟɥɢ-ɩɪɨɬɨɬɢɩɚ AKO |
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TAU |
ɉɨɫɬɨɹɧɧɚɹ ɜɪɟɦɟɧɢ ɠɢɡɧɢ ɚɦɛɢɩɨɥɹɪɧɨɣ ɪɟ- |
7.1u |
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THETA |
Ɏɚɤɬɨɪ ɩɨɩɟɪɟɱɧɨɝɨ ɩɨɥɹ (Transverse field factor) |
|
20m |
VT |
ɉɨɪɨɝɨɜɨɟ ɧɚɩɪɹɠɟɧɢɟ |
|
4.7 |
VTD |
ɉɨɪɨɝ ɨɛɟɞɧɟɧɢɹ ɨɛɥɚɫɬɢ ɩɟɪɟɤɪɵɬɢɹ ɡɚɬɜɨɪ- |
1m |
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ɫɬɨɤ |
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WB |
Ɇɟɬɚɥɥɭɪɝɢɱɟɫɤɚɹ ɲɢɪɢɧɚ ɛɚɡɵ |
|
90u |
11.8.2. ɍɪɚɜɧɟɧɢɹ ɦɚɬɟɦɚɬɢɱɟɫɤɨɣ ɦɨɞɟɥɢ IGBT
IMOS — ɬɨɤ ɤɚɧɚɥɚ MOSFET-ɬɪɚɧɡɢɫɬɨɪɚ ( )
IC = IT — ɤɨɥɥɟɤɬɨɪɧɵɣ ɢɥɢ ɚɧɨɞɧɵɣ ɬɨɤ ( )
ICSS — ɭɫɬɚɧɨɜɢɜɲɟɟɫɹ ɡɧɚɱɟɧɢɟ ɬɨɤɚ ɤɨɥɥɟɤɬɨɪɚ ɛɢɩɨɥɹɪɧɨɣ ɫɬɪɭɤɬɭɪɵ ɜ ɪɚɛɨɱɟɣ ɬɨɱɤɟ ɩɨ ɩɨɫɬɨɹɧɧɨɦɭ ɬɨɤɭ ( )
530 |
ɉɪɨɝɪ ɦɦ ɫɯɟɦɨɬɟɯɧɢɱɟɫɤɨɝɨ ɦɨɞɟɥɢɪɨɜ ɧɢɹ Micro-Cap. ȼɟɪɫɢɢ 9, 10 |
IBSS — ɬɨɤ ɛɚɡɵ ɛɢɩɨɥɹɪɧɨɣ ɫɬɪɭɤɬɭɪɵ ɜ ɪɚɛɨɱɟɣ ɬɨɱɤɟ ɧɚ ɩɨɫɬɨɹɧɧɨɦ ɬɨɤɟ ( )
IMULT — ɬɨɤ ɥɚɜɢɧɧɨɝɨ ɭɦɧɨɠɟɧɢɹ ( )
b — ɤɨɷɮɮɢɰɢɟɧɬ (ɞɨɥɹ) ɚɦɛɢɩɨɥɹɪɧɨɣ ɩɨɞɜɢɠɧɨɫɬɢ
Ɋɢɫ. 11.21. Ɇɨɞɟɥɶ IGBT-ɬɪɚɧɡɢɫɬɨɪɚ
Dp — ɤɨɷɮɮɢɰɢɟɧɬ ɞɢɮɮɭɡɢɢ ɞɵɪɨɤ (ɫɦ2/c)
Qeb — ɦɝɧɨɜɟɧɧɨɟ ɡɧɚɱɟɧɢɟ ɡɚɪɹɞɚ ɢɡɛɵɬɨɱɧɵɯ ɧɨɫɢɬɟɥɟɣ ɛɚɡɨɜɨɣ ɨɛ- ɥɚɫɬɢ (Ʉɥ)
Qb — Ɏɨɧɨɜɵɣ ɡɚɪɹɞ ɧɨɫɢɬɟɥɟɣ (Ʉɥ)
NI — ɫɨɛɫɬɜɟɧɧɚɹ ɤɨɧɰɟɧɬɪɚɰɢɹ ɧɨɫɢɬɟɥɟɣ
M — ɤɨɷɮɮɢɰɢɟɧɬ ɥɚɜɢɧɧɨɝɨ ɭɦɧɨɠɟɧɢɹ
Igen — ɬɨɤ ɬɟɪɦɨɝɟɧɟɪɚɰɢɢ ɩɟɪɟɯɨɞɚ ɤɨɥɥɟɤɬɨɪ-ɛɚɡɚ ( ) Esi — ɞɢɷɥɟɤɬɪɢɱɟɫɤɚɹ ɩɪɨɧɢɰɚɟɦɨɫɬɶ ɤɪɟɦɧɢɹ q=1.6e-19 — ɡɚɪɹɞ ɷɥɟɤɬɪɨɧɚ (Ʉɥ)
wb 100 WB (ɫɦ)
wbcj |
2 Esi 0.6 vbc |
(ɫɦ) |
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q NB |
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W=wb–wbcj — ɲɢɪɢɧɚ ɤɜɚɡɢɧɟɣɬɪɚɥɶɧɨɣ ɛɚɡɵ (ɋɦ)
Rb — ɫɨɩɪɨɬɢɜɥɟɧɢɟ ɛɚɡɵ ɫ ɦɨɞɭɥɢɪɭɟɦɨɣ ɩɪɨɜɨɞɢɦɨɫɬɶɸ (Ɉɦ)
Vgst = Vgs – VT (ȼ)
ɍɪɚɜɧɟɧɢɹ ɞɥɹ ɢɫɬɨɱɧɢɤɨɜ ɩɨɫɬɨɹɧɧɨɝɨ ɬɨɤɚ
ɂɫɬɨɱɧɢɤ ɬɨɤɚ IMOS