Micro-Cap v7.1.6 / RM
.PDFModel parameters for level 5 (continued)
Name |
Parameter |
Units |
Default |
WU1B |
Width dependence of U1B |
•m2/V3•s |
0.00 |
U1D |
VDS dependence of U1 |
m2/V3•s |
0.00 |
LU1D |
Length dependence of U1D |
•m2/V3•s |
0.00 |
WU1D |
Width dependence of U1D |
•m2/V3•s |
0.00 |
N0 |
Subthreshold slope at vds=0,vbs=0 |
|
1.40 |
LN0 |
Length dependence of N0 |
0.00 |
|
WN0 |
Width dependence of N0 |
|
0.00 |
NB |
VBS dependence of N |
√ V |
0.50 |
LNB |
Length dependence of NB |
•√ V |
0.00 |
WNB |
Width dependence of NB |
•√ V |
0.00 |
ND |
VDS dependence of N |
V-1 |
0.00 |
LND |
Length dependence of ND |
•V-1 |
0.00 |
WND |
Width dependence of ND |
•V-1 |
0.00 |
VOF0 |
Threshold voltage offset at vds=0,vbs=0 V |
1.80 |
|
LVOF0 |
Length dependence of VOF0 |
•V |
0.00 |
WVOF0 |
Width dependence of VOF0 |
•V |
0.00 |
VOFB |
VBS dependence of VOF |
|
0.00 |
LVOFB |
Length dependence of VOFB |
0.00 |
|
WVOFB |
Width dependence of VOFB |
|
0.00 |
VOFD |
VDS dependence of VOF |
|
0.00 |
LVOFD |
Length dependence of VOFD |
0.00 |
|
WVOFD |
Width dependence of VOFD |
|
0.00 |
AI0 |
Pre-factor of hot electron effect |
|
0.00 |
LAI0 |
Length dependence of AI0 |
0.00 |
|
WAI0 |
Width dependence of AI0 |
|
0.00 |
AIB |
VBS dependence of AI |
V-1 |
0.00 |
LAIB |
Length dependence of AIB |
•V-1 |
0.00 |
WAIB |
Width dependence of AIB |
•V-1 |
0.00 |
BI0 |
Exponential factor of hot electron effect |
|
0.00 |
LBI0 |
Length dependence of BI |
0.00 |
|
WBI0 |
Width dependence of BI |
|
0.00 |
BIB |
VBS dependence of BI |
V-1 |
0.00 |
LBIB |
Length dependence of BIB |
•V-1 |
0.00 |
WBIB |
Width dependence of BIB |
•V-1 |
0.00 |
VGHIGH |
Upper bound of cubic spline function |
•V |
0.20 |
LVGHIGH |
Length dependence of VGHIGH |
•V |
0.00 |
WVGHIGH |
Width dependence of VGHIGH |
•V |
0.00 |
VGLOW |
Lower bound of cubic spline function |
V |
-0.15 |
438 Chapter 22: Analog Devices
Model parameters for level 8
These are the model parameters for the BSIM 3 model, level 8. This is the latest version 3.2 of the Berkeley BSIM3 model, dated 10/22/98.
Name |
Parameter |
Default |
NJ |
Emission coefficient (takes priority over N) |
0.00 |
XTI |
Junction current temperature exponent coefficient |
0.00 |
TPB |
Temperature coefficient of PB |
0.00 |
TPBSW |
Temperature coefficient of PBSW |
0.00 |
PBSWG |
S/D gate sidewall junction built-in potential |
0.00 |
TPBSWG |
Temperature coefficient of PBSWG |
0.00 |
TCJ |
Temperature coefficient of CJ |
0.00 |
TCJSW |
Temperature coefficient of CJSW |
0.00 |
CJSWG |
S/D gate sidewall junction capacitance |
0.00 |
TCJSWG |
Temperature coefficient of CJSWG |
0.00 |
MJSWG |
S/D gate sidewall junction capacitance grading coeff. |
0.00 |
LMIN |
Minimumchannellength |
0.00 |
LMAX |
Maximumchannellength |
1.00 |
WMIN |
Minimum channel width |
0.00 |
WMAXMaximum channel width |
1.00 |
|
BINUNIT |
Bin units selector |
1.00 |
MOBMOD |
Mobilitymodel |
1.00 |
CAPMOD |
Flag for short channel cap. model |
3.00 |
NQSMOD |
Flag for NQS model |
0.00 |
NOIMOD |
Flag for noise model |
1.00 |
PARAMCHK |
Parameter check flag |
0.00 |
VERSION |
Version number 3.1 or 3.2 |
3.20 |
VTH0 |
VTH at vbs=0 for large channel length |
0.00 |
LVTH0 |
Length dependence of VTH0 |
0.00 |
WVTH0 |
Width dependence of VTH0 |
0.00 |
PVTH0 |
Length and width product dependence of VTH0 |
0.00 |
K1 |
First-order body effect coefficient |
0.00 |
LK1 |
Length dependence of K1 |
0.00 |
WK1 |
Width dependence of K1 |
0.00 |
PK1 |
Length and width product dependence of K1 |
0.00 |
K2 |
Second-order body effect coefficient |
0.00 |
LK2 |
Length dependence of K2 |
0.00 |
WK2 |
Width dependence of K2 |
0.00 |
PK2 |
Length and width product dependence of K2 |
0.00 |
K3 |
Narrow width effect coefficient |
80.00 |
LK3 |
Length dependence of K3 |
0.00 |
440 Chapter 22: Analog Devices
Model parameters for level 8 (continued)
Name |
Parameter |
Default |
LDVT2W |
Length dependence of DVT2W |
0.00 |
WDVT2W |
Width dependence of DVT2W |
0.00 |
PDVT2W |
Length and width product dependence of DVT2W |
0.00 |
U0 |
Mobility at Temp = TNOM |
0.00 |
LU0 |
Length dependence of U0 |
0.00 |
WU0 |
Width dependence of U0 |
0.00 |
PU0 |
Length and width product dependence of U0 |
0.00 |
UA |
Linear gate dependence of mobility |
2.25E-9 |
LUA |
Length dependence of UA |
0.00 |
WUA |
Width dependence of UA |
0.00 |
PUA |
Length and width product dependence of UA |
0.00 |
UB |
Quadratic gate dependence of mobility |
5.87E-19 |
LUB |
Length dependence of UB |
0.00 |
WUB |
Width dependence of UB |
0.00 |
PUB |
Length and width product dependence of UB |
0.00 |
UC |
Body-bias dependence of mobility |
0.00 |
LUC |
Length dependence of UC |
0.00 |
WUC |
Width dependence of UC |
0.00 |
PUC |
Length and width product dependence of UC |
0.00 |
VSAT |
Saturation velocity at Temp = TNOM |
8.0E4 |
LVSAT |
Length dependence of VSAT |
0.00 |
WVSAT |
Width dependence of VSAT |
0.00 |
PVSAT |
Length and width product dependence of VSAT |
0.00 |
A0 |
Bulk charge effect coefficient |
1.00 |
LA0 |
Length dependence of A0 |
0.00 |
WA0 |
Width dependence of A0 |
0.00 |
PA0 |
Length and width product dependence of A0 |
0.00 |
AGS |
Gate bias coefficient for channel length |
0.00 |
LAGS |
Length dependence of AGS |
0.00 |
WAGS |
Width dependence of AGS |
0.00 |
PAGS |
Length and width product dependence of AGS |
0.00 |
B0 |
Bulk charge effect coefficient for channel width |
0.00 |
LB0 |
Length dependence of B0 |
0.00 |
WB0 |
Width dependence of B0 |
0.00 |
PB0 |
Length and width product dependence of B0 |
0.00 |
B1 |
Bulk charge effect width offset |
0.00 |
LB1 |
Length dependence of B1 |
0.00 |
WB1 |
Width dependence of B1 |
0.00 |
442 Chapter 22: Analog Devices
Model parameters for level 8 (continued)
Name |
Parameter |
Default |
PDWB |
Length and width product dependence of DWB |
0.00 |
VOFF |
Offset voltage in the subthr. region for large W and L |
-0.08 |
LVOFF |
Length dependence of VOFF |
0.00 |
WVOFF |
Width dependence of VOFF |
0.00 |
PVOFF |
Length and width product dependence of VOFF |
0.00 |
NFACTOR |
Subthreshold swing factor |
1.00 |
LNFACTOR |
Length dependence of NFACTOR |
0.00 |
WNFACTOR |
Width dependence of NFACTOR |
0.00 |
PNFACTOR |
Length and width product dependence of NFACTOR |
0.00 |
ETA0 |
DIBL coefficient in subthreshold region |
0.08 |
LETA0 |
Length dependence of ETA0 |
0.00 |
WETA0 |
Width dependence of ETA0 |
0.00 |
PETA0 |
Length and width product dependence of ETA0 |
0.00 |
ETAB |
Body bias coefficient for the subthr. DIBL coefficient |
-0.07 |
LETAB |
Length dependence of ETAB |
0.00 |
WETAB |
Width dependence of ETAB |
0.00 |
PETAB |
Length and width product dependence of ETAB |
0.00 |
DSUB |
DIBL coefficient exponent in subthreshold region |
0.00 |
LDSUB |
Length dependence of DSUB |
0.00 |
WDSUB |
Width dependence of DSUB |
0.00 |
PDSUB |
Length and width product dependence of DSUB |
0.00 |
CIT |
Interface trap capacitance |
0.00 |
LCIT |
Length dependence of CIT |
0.00 |
WCIT |
Width dependence of CIT |
0.00 |
PCIT |
Length and width product dependence of CIT |
0.00 |
CDSC |
Drain/source to channel coupling capacitance |
2.4E-4 |
LCDSC |
Length dependence of CDSC |
0.00 |
WCDSC |
Width dependence of CDSC |
0.00 |
PCDSC |
Length and width product dependence of CDSC |
0.00 |
CDSCB |
Body-bias sensitivity of CDSC |
0.00 |
LCDSCB |
Length dependence of CDSCB |
0.00 |
WCDSCB |
Width dependence of CDSCB |
0.00 |
PCDSCB |
Length and width product dependence of CDSCB |
0.00 |
CDSCD |
Drain-bias sensitivity of CDSC |
0.00 |
LCDSCD |
Length dependence of CDSCD |
0.00 |
WCDSCD |
Width dependence of CDSCD |
0.00 |
PCDSCD |
Length and width product dependence of CDSCD |
0.00 |
PCLM |
Channel length modulation parameter |
1.30 |
444 Chapter 22: Analog Devices
Model parameters for level 8 (continued)
Name |
Parameter |
Default |
PNGATE |
Length and width product dependence of NGATE |
0.00 |
ALPHA0 |
Substrate current model parameter 1 |
0.00 |
LALPHA0 |
Length dependence of ALPHA0 |
0.00 |
WALPHA0 |
Width dependence of ALPHA0 |
0.00 |
PALPHA0 |
Length and width product dependence of ALPHA0 |
0.00 |
ALPHA1 |
Substrate current model parameter 2 |
0.00 |
LALPHA1 |
Length dependence of ALPHA1 |
0.00 |
WALPHA1 |
Width dependence of ALPHA1 |
0.00 |
PALPHA1 |
Length and width product dependence of ALPHA1 |
0.00 |
IJTH |
Diode limiting current |
0.10 |
BETA0 |
Substrate current model parameter 3 |
30.00 |
LBETA0 |
Length dependence of BETA0 |
0.00 |
WBETA0 |
Width dependence of BETA0 |
0.00 |
PBETA0 |
Length and width product dependence of BETA0 |
0.00 |
XPART |
Channel charge partitioning flag |
0.00 |
CGSL |
Non-LDD region s-g overlap cap. per unit ch. length |
0.00 |
LCGSL |
Length dependence of CGSL |
0.00 |
WCGSL |
Width dependence of CGSL |
0.00 |
PCGSL |
Length and width product dependence of CGSL |
0.00 |
CGDL |
Non-LDD region d-g overlap cap. per unit ch. length |
0.00 |
LCGDL |
Length dependence of CGDL |
0.00 |
WCGDL |
Width dependence of CGDL |
0.00 |
PCGDL |
Length and width product dependence of CGDL |
0.00 |
CKAPPA |
Coefficient for lightly doped region overlap |
|
|
fringing field capacitance |
0.60 |
LCKAPPA |
Length dependence of CKAPPA |
0.00 |
WCKAPPA |
Width dependence of CKAPPA |
0.00 |
PCKAPPA |
Length and width product dependence of CKAPPA |
0.00 |
CF |
Fringing field capacitance |
0.00 |
LCF |
Length dependence of CF |
0.00 |
WCF |
Width dependence of CF |
0.00 |
PCF |
Length and width product dependence of CF |
0.00 |
CLC |
Constant term for short channel model |
1E-7 |
LCLC |
Length dependence of CLC |
0.00 |
WCLC |
Width dependence of CLC |
0.00 |
PCLC |
Length and width product dependence of CLC |
0.00 |
CLE |
Exponential term for short channel model |
0.60 |
LCLE |
Length dependence of CLE |
0.00 |
446 Chapter 22: Analog Devices