Добавил:
Upload Опубликованный материал нарушает ваши авторские права? Сообщите нам.
Вуз: Предмет: Файл:
ELMAGN_lab_2_1-4_3_1-2.doc
Скачиваний:
12
Добавлен:
10.02.2016
Размер:
5.42 Mб
Скачать

4.2. Measurement of emf of a source by direct method

During a direct measurement of EMF source (Fig. 18), the potential difference, which shows the voltmeter (64), is smaller than EMF on the value of voltage drop on the internal resistance of the source Ir.

Fig. 18 – The direct method scheme

If voltage drop on the internal resistance of the source Ir<<UV is more smaller than voltmeter's error, then the voltmeter scale reading UVeХ can be taken equal to the value of EMF of the source, and the measurement error has to be taken equal to the voltmeter's error. If the voltage drop inside the source IrUV is comparable with voltmeter's error or even unknown, then the voltmeter scale reading UVeХ will not match to real value of the source EMF.

Current in this circuit we define by Ohm’s law for closed circuit (61):

,

where RV – resistance of voltmeter.

Then voltages drop on voltmeter (64):

. (66)

From (66) we can see, that the voltmeter scale reading UVeХ will be differs from EMF if resistance of the voltmeter RVrX is comparable with internal resistance of the source. For example, if RV = rX, then UV=Х/2.

Taking into account (66), we obtain relative error of this direct measurement of EMF in percent:

. (67)

Relative error of the direct measurement (67) also depends on a relation RV/rX.

Conclusion: For measuring of the EMF of a source by a direct method, at first it is necessary to find a range of values of internal resistances of source at which measuring it is possible to consider correct.

5. Data processing

(Same as in Laboratory work № 2-2).

6. Work execution order and experimental data analysis

5.1. Compensation method

  1. Mount the scheme Fig. 19. As a modelling source of the EMF we choose a source e1, which is on the left side of a laboratory board. In series with it we connect one-decade resistors box R2, which simulates the sources internal resistance. Auxiliary source e2 is on the right side of a laboratory board.

  2. Turn on both observable and auxiliary sources. Set the value R2=0, thus .

  3. Set the potentiometer slider in the middle. Lock the switches К1 and then К2.

  4. M

    Fig. 19 – The compensation method scheme

    oving the potentiometer slider, obtain absence of current through the microampermeterI=0.

  5. Only at the moment of compensation we can write down the voltmeter scale reading Xi into a measurements table. To disconnect switches К1 and К2.

  6. To set sequentially values of resistance of one-decade resistors box R2 equal 10k, 30k, 50k, 70k, thus . It is equivalent to a changing of sources. Make measurements according to points 3, 4 and 5.

  7. Calculate average value of EMF <X> (41), abmodality each measurement Xi (42), sum of squares of abmodalities (43).

  8. For known the sum of squares of abmodalities calculate statistical absolute error XST (44) for confidence probability =0,95, number of measurements n=5 and Sdudent’s coefficient .

  9. Calculate absolute device error XDEV according (45):

,

where  - accuracy class and Umax – grid limit of voltmeter.

  1. Calculate total absolute error  (46) and relative error  (47) of measurements.

  2. Write a final result as a confidence interval and relative error (48).

  3. Conclude about valuess of statistical and device absolute errors.

Соседние файлы в предмете [НЕСОРТИРОВАННОЕ]