- •ARM PrimeCell
- •Contents
- •List of Tables
- •List of Figures
- •Preface
- •About this document
- •Intended audience
- •Using this manual
- •Timing diagram conventions
- •Further reading
- •ARM publications
- •Feedback
- •Feedback on the ARM PrimeCell SSMC
- •Feedback on this document
- •Introduction
- •1.1 About the ARM PrimeCell SSMC (PL093)
- •1.1.1 Features of the PrimeCell SSMC
- •1.1.2 Programmable parameters
- •1.2 Supported memory devices
- •1.2.1 Asynchronous memory devices
- •1.2.2 Synchronous memory devices
- •Functional Overview
- •2.1 ARM PrimeCell SSMC overview
- •2.1.1 SSMC core
- •AMBA AHB interface
- •Transfer control
- •External bus interface
- •Pad interface
- •2.2 PrimeCell SSMC operation
- •2.2.1 Clock frequency selection
- •2.2.2 Memory bank select
- •2.2.3 Access sequencing and memory width
- •2.2.4 Wait state generation
- •2.2.5 Write protection
- •2.2.6 Asynchronous static memory read control
- •Output enable programmable delay
- •Asynchronous memory device accesses
- •Asynchronous burst and page mode devices
- •2.2.7 Synchronous static memory read control
- •2.2.8 Asynchronous static memory write control
- •Write enable programmable delay
- •SRAM
- •Flash memory
- •2.2.9 Synchronous static memory write control
- •2.2.10 Bus turnaround
- •2.2.11 Synchronous memory devices bus turnaround
- •2.2.12 Asynchronous external wait control
- •SMWAIT assertion timing
- •SMWAIT deassertion timing
- •SMWAIT timing diagrams
- •2.2.13 Synchronous external wait control
- •2.3.1 Byte lane control
- •Accesses to memory banks constructed from 8-bit or non byte-partitioned memory devices
- •Accesses to memory banks constructed from 16 or 32-bit memory devices
- •Elimination of floating bytes on the external interface
- •Byte lane control and data bus steering for little and big-endian configurations
- •2.3.2 Clock feedback in SSMC
- •Example of 8-bit memory device interconnection
- •Example of 16-bit memory device interconnection
- •Example of 32-bit memory device interconnection
- •2.3.3 Example of system with single output clock
- •2.4 Slave interface connection to the AHB
- •2.5 Memory shadowing
- •2.5.1 Booting from ROM after reset
- •2.5.2 External bank SMCS7 size configuration
- •2.6 Test interface controller
- •2.7 Using the SSMC with an EBI
- •Programmer’s Model
- •3.1 About the programmer’s model
- •3.2 PrimeCell SSMC registers
- •SMBCRx example configurations
- •3.2.9 SSMC status register, SSMCSR
- •3.2.10 SSMC control register, SSMCCR
- •SSMCPeriphID0 register
- •SSMCPeriphID1 register
- •SSMCPeriphID2 register
- •SSMCPeriphID3 register
- •SSMCPCellID0 register
- •SSMCPCellID1 register
- •SSMCPCellID2 register
- •SSMCPCellID3 register
- •Programmer’s Model for Test
- •4.1 Scan testing
- •4.2 Test registers
- •4.2.1 SSMC test control register, SSMCITCR
- •4.2.2 SSMC test input register, SSMCITIP
- •4.2.3 SSMC test output register, SSMCITOP
- •Signal Descriptions
- •A.1 AMBA AHB interface signals
- •A.2 AMBA AHB slave interface signals
- •A.3 AMBA AHB master interface signals
- •A.4 Non-AMBA signals
- •A.5 Input/output pad signals
- •Index
Functional Overview
HCLK |
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HADDRSMC |
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A+4 |
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HWRITESMC |
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HWDATASMC |
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D(A) |
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HREADYOUTSMC |
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SMADDR |
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SMDATAOUT |
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D(A) |
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D(A+4) |
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SMCS |
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SMADDRVALID |
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nSMWEN |
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Figure 2-20 External memory two zero wait writes timing diagram
Flash memory
Write timing for flash memory devices is the same as for SRAM devices. For details of burst flash devices see Synchronous static memory write control.
2.2.9Synchronous static memory write control
Figure 2-21 on page 2-29 shows an example synchronous write operation. In this example the signal SMADDRVALID provides a one cycle pulse. This behavior is enabled by setting the SyncWriteDev bit in the SMBCRx register. The AddrValidWriteEn bit must also be set for synchronous write.
The signal nSMWE is only active for 1 cycle. This is active at the start of the transfer unless it is delayed using the control bits WSWE to delay it.
2-28 |
Copyright © 2001. All rights reserved. |
ARM DDI 0236A |
Functional Overview
HCLK |
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HADDRSMC |
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HWRITESMC |
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HWBURSTSMC |
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HWDATASMC |
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D(A) |
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HREADYOUTSMC |
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SMFBCLK |
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SMADDRVALID |
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SMBAA |
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SMADDR |
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SMDATAOUT |
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SMCS |
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nSMWEN |
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WSTWR=2 |
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Figure 2-21 Synchronous two wait state write timing diagram
Synchronous burst writes are supported by the SSMC. There is no write buffer so the AHB transfer must be delayed to allow the data to be output onto the SMDATA bus. The write can be controlled in the same way as reads using the bits AddrValidWriteEn, BurstLenWrite, SyncEnWrite and BMWrite contained in the bank control register, SMCRx. An example of a burst write is shown in Figure 2-22 on page 2-30.
ARM DDI 0236A |
Copyright © 2001. All rights reserved. |
2-29 |
Functional Overview
HCLK |
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HADDRSMC |
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A |
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A(A+8) |
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A(A+C) |
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HWRITESMC |
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HWBURSTSMC |
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INCR4 |
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HWDATASMC |
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D(A) |
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D(A+4) |
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D(A+8) |
D(A+C) |
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HREADYOUTSMC |
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SMFBCLK |
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SMADDRVALID |
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SMBAA |
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SMADDR |
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A |
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SMDATAOUT |
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D(A) |
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D(A+4) |
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D(A+8) D(A+C) |
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SMCS |
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WSTWR=2 
nSMWEN
Figure 2-22 Synchronous two wait state burst write with WSTWR=2 and WSTWE=2 timing diagram
2.2.10Bus turnaround
The PrimeCell AHB SSMC can be configured for each memory bank to use external bus turnaround cycles between read and write memory accesses. The IDCY field can be programmed for up to 15 bus turnaround wait states. This is to avoid bus contention on the external memory data bus. Bus turnaround cycles are generated between external bus transfers as follows:
•read-to-read, to different memory banks
•read-to-write, to the same memory bank
•read-to-write, to different memory banks.
Figure 2-23 on page 2-31 shows a zero wait read (WSTRD=0) followed by a zero wait write (WSTWR=0) with default turnaround between the transfers. Standard AHB wait states are added to the transfers, two for the read, and one for the write.
2-30 |
Copyright © 2001. All rights reserved. |
ARM DDI 0236A |
Functional Overview
HCLK |
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HADDRSMC A(Read) |
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B(Write) |
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HWRITESMC |
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HWDATASMC |
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D(B) |
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HRDATASMC |
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HREADYOUTSMC |
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1 AHB |
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2 AHB wait states |
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wait state |
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SMADDR |
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SMDATAIN |
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SMDATAOUT |
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D(B) |
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nSMOEN
SMCS
nSMWEN
nSMDATAEN
Read 
Write 
Figure 2-23 Read followed by write (WSTRD=WSTWR=0) with no turnaround (IDCY=0) timing diagram
Figure 2-24 on page 2-32 shows a zero wait write followed by a zero wait read with default turnaround between the transfers. One AHB wait state is added to the write transfer, and four are added to the read - three to allow the write to complete before the read is started, and then one for the read transfer.
ARM DDI 0236A |
Copyright © 2001. All rights reserved. |
2-31 |
Functional Overview
HCLK |
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HADDRSMC A(Write) |
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B(Read) |
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HWRITESMC |
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HWDATASMC |
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D(A) |
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1 AHB wait |
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cycle |
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nSMDATAEN |
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Figure 2-24 Write followed by read (WSTRD=WSTWR=0) with no turnaround (IDCY=0) timing diagram
Figure 2-25 on page 2-33 shows a zero wait read followed by two zero wait writes with two turnaround cycles added. The standard minimum of two AHB wait states are added to the read transfer, one is added to the first write (as for any read-write transfer sequence), and three are added to the second write due to insertion of the two turnaround cycles which are only generated after the first write transfer has been detected, and the standard one wait state added when a write transfer is buffered.
2-32 |
Copyright © 2001. All rights reserved. |
ARM DDI 0236A |
