Functional Overview

WSTRD=3

Figure 2-15 External memory zero wait state read timing diagram with WSTRD=3, WSTBRD=0, and SMMEMCLK=HCLK/2

2.2.8Asynchronous static memory write control

Write timing is described in the following sections:

•Write enable programmable delay

•SRAM on page 2-24

•Flash memory on page 2-28.

Write enable programmable delay

The delay between the assertion of the chip select and the write enable is programmable from 0 to 15 cycles using the WSTWEN bits of the bank control registers. This is used to reduce the power consumption for memories. The write enable is asserted on the rising edge of SMMEMCLK at the same time as chip select (zero wait states WSTWE = 0).

Functional Overview

For most asynchronous memory devices an SMMEMCLK cycle is required before the assertion of nWE otherwise there is the hazard that nCS will change after nWE. Extra cycles can be added before nWE is asserted using the WSTWE bits in the bank control registers. For example setting WSTWR=WSTWE=1 will extend the transfer by 1 cycle and delay the assertion of nWE by one cycle.

The write enable is always deasserted one cycle before the chip select, at the end of the transfer. nSMBLS has the same timing as nSMWEN for writes to 8-bit devices that use the byte lane selects instead of the write enables.

Note

The WSTWEN programmed value must be equal to, or less than the WSTWR programmed value otherwise an invalid access sequence will be generated. The access is timed by the wait states and not by the WSTWEN value.

In the External Wait enabled mode, the timing of the transfer (controlled by SMWAIT) is not known. WSTWE is still used to delay the assertion of nSMWEN. nSMWEN is delayed further by the external wait signal if it has not been asserted when SMWAIT is asserted.

The SMADDRVALID signal might be required for synchronous static memory devices when used in asynchronous mode. This can be disabled using the AddrValidWriteEn bit in the SMBCRx register. This bit defaults to being set (enable). It can then be cleared if not required. When disabled, the signal is driven HIGH continuously.

SRAM

Write timing for SRAM starts with assertion of the appropriate memory bank chip selects SMCS[x] and address signals SMADDR[25:0]. The write access time is determined by the number of wait states programmed for the WSTWR field of the bank control register SMBWSTWRRx. The IDCY field in the cycle control register SMBIDCYRx determines the number of bus turnaround wait states added between external read and write transfers.

Figure 2-16 on page 2-25 shows a single external memory write transfer with the minimum zero wait states (WSTWR=0), and the minimum zero write enable delay states (WSTWEN=0). A single AHB wait state is inserted during all single write transfers.

Functional Overview

Figure 2-16 External memory zero wait state write timing diagram

Figure 2-17 shows a single external memory write transfer with two wait states (WSTWR=2), and the minimum zero write enable delay states (WSTWEN=0). A single AHB wait state is inserted.