Раздел 3 Второе занятие

143

ег manufacturing process, compared with conventional wet chem­ical etching processes.

Recently, MOS LSI has shifted from LSI phase to VLSI phase, which requires a precise pattern less than 3 jam. This transition can be achieved by progress in wafer process technology, including mi­crofabrication as well as device and circuits design technologies. Conventional plasma etching is not adequate in VLSI regions for the delineation of precise patterns because of its inherent under­cutting (подтравливающий) effect which results in anisotropic pro­file of an etched pattern.

Dry etch technologies available for LSI processing are classi­fied into plasma etch, sputter etch and ion beam etch, with items such as etch mode, apparatus and reaction mechanism.

4. Учитесь говорить.

15. Задайте 10 вопросов (устно) по содержанию основного текста.

Тйпы вопросов:

1. What is the (nature, difference, process, role, importance, etc.) of... ?

2. What is referred to as ... ?

3. What is used as ... ?

4. Where do we use ... ?

5. What function do the holes play?

Внеаудиторная работа

1. Проверьте, знаете ли вы слова.

15. Назовите синонимы следующих слов (вы можете найти их в основном тексте):

1. matter, material п 6. location, spot п

2. compact, fixed, set a 7. place, position n

3. peak, cap n 8. empty, unoccupied a

4. bad, cheap a 9. exchange, replace v

5. convey, transport v 10. shield, defend v

Микроэлектроника настоящее и будущее

15. Переведите следующие речевые отрезки из основного текста:

15. to raise from the top to the bottom

16. the electron may be tightly bound to atoms

17. conductivity poses a problem

18. to improve the resistance

19. modest expenditure of епещу

20. the dopants are diffused into semiconductor crystals

21. to expose the wafer to an oxi­dizing atmosphere

15. to remove the coating

16. to protect from harmful effects

17. advances in technology

18. the deposition of thin films

19. to provide precise dimensions

20. to select the areas on a wafer

21. to involve the use of a glow dis­charge

22. to specify the pattern of each layer

15. Назовите термин, исходя из следующих определений:

16. The process of introducing impurity into the crystalline structure of pure silicon.

17. Any substance added in the doping process, such as arsenic.

18. A patterned plate used to shield sections of the silicon chip sur­face during the manufacture of integrated circuits.

2. Проверьте, как вы умеете оперировать грамматическими и лексическими явлениями при переводе.

Текст 3.4 В

Переведите текст со словарем письменно. Значения выделенных слов вы сможете понять из контекст а. Озаглавьте текст.

An integrated circuit is comprised of a single silicon chip containing transistors, diodes, resistors and capacitors, suitably connected to form a complete circuit. The first successful attempt to produce an integrated circuit, in 1959, made use of mesa construction, but this method is known to be quickly replaced by the use of planar techniques.

The important feature of the planar process is the deposition of a silicon dioxide layer on the top surface of the epitaxial wafer, which acts as a mask against diffusion. The process involves exposing the wa­fer to an oxygen atmosphere at high temperature.