Раздел 2 Первое занятие

105

3. Проверьте, как вы запомнили слова.

14. Запишите переводданных речевых отрезков:

(1-10): the feature of the gate; a feature size; to exhibit the pattern; to exhibit the performance; vulnerability to the response; to process the data; the arrangement of the processor; the avail­ability of chips; to enhance the speed; time delay; a signifi­cant prediction; to determine the capability; the level of de­velopment

(11-20): the net effect; to appreciate the feature; an appreciable ex­tension; to contribute efforts; an arrangement suitable for the purpose; a mode in common use; a contribution to the processing

(21—30): to concern the events occurred; to turn full time to research; to amplify the sensitivity; to trace the operation

(31-40): to affect the response rate; to add some points; to achieve the metal purity; the perfection of the rectification; to wit­ness the event; to gain similarity; to be attributable to the emergency

(41-50): a durable mark; to act as a mask; to permit the size shrink

(51—64): an insulator coating of a conductor; to predict detrimental effect; to refer to a conventional state; sufficient purity

14. Найдите в основном тексте (первая часть) английские эквиваленты следую­щих речевых отрезков и запишите их:

1. постоянное уменьшение размеров ИС

2. новые материалы имеют такие характеристики, как ...

3. усовершенствования, достигнутые в технологии

4. размеры транзистора

5. задержки по времени, связанные с ...

6. определение характеристик схемы

7. более высокий уровень интеграции позволяет увеличить

8. довольно значительная задержка по времени

9. конструкция любого устройства

10. большой вклад в изучение ...

11. исследование процессов, происходящих в р-п переходах

12. чрезвычайная важность полупроводниковых материалов

Микроэлектроника, настоящее и будущее

13. посвятили все свое время исследованию полупроводников

14. определить химическую чистоту

3. Учитесь кратко излагать содержание текста.

14. Кратко изложите содержание основного текста. При кратком изложении со­держания текста используйте следующие речевые отрезки:

1. ... has focused the attention on ...

2. ... have allowed integration of...

3. ... should enhance the speed ...

4. ... allows the chip area to increase ...

5. ... are required for interconnections ...

6. ... show intrinsic properties ...

7. ... was centered on two semiconductors ...

8. ... has become the proper material...

9. ... gradually gained favour ...

107

ВТОРОЕ ЗАНЯТИЕ

Работа в аудитории

1. Проверьте домашнее задание.

1. Проверьте письменный перевод второй части основного текста.

2. Проверьте упражнения (выборочно).

2. Проверьте, как вы запомнили слова.

3. Учитесь переводить.

Текст 2.1 В

Переведите текст устно (с листа). Значение выделенных слов вы сможете понять из контекста.

GaAs MESFETs Research

Many years have passed since the bipolar transistor was invented by Shockley in 1948. Bipolar technology has highly matured today, and the structure of Si bipolar transistor has been improved almost to its physical limits. The upper frequency limit of its practical application is consid­ered to be 4 Ghz regardless of advances in technology.

In 1966, C. A. Mead demonstrated the possibility of transistor with a very high cut-off frequency employing a GaAs field effect transistor with a Schottky barrier gate. Since then, GaAs MESFET research and development efforts have been made in many laboratories around the world. The main purpose of the development of GaAs MESFET is to obtain three-terminal microwave semiconductor devices which can be used to develop microwave amplifiers to replace the parametric low noise amplifiers and the travelling wave tube power amplifiers.

In the last several years, GaAs MESFETs have made remarkable progress in both low noise GaAs MESFET amplifiers, resulting in a sub­stantial reduction in the cost of microwave communication systems. High power GaAs MESFETs replaced some TWTs, guaranteeing a much long­er lifetime and a smaller size than the TWT.

Микроэлектроника настоящее и будущее

Текст 2.2 В

Переведите текст письменно со словарем. Обратите внимание на перевод выде­ленных слов. Время перевода — 15 минут. Проверьте перевод в аудитории.

Вариант 1

Speedier Semiconductor Chips

The ongoing microelectronics revolution was ushered in over 50 years ago by the introduction of silicon-based semiconductor chips. The circuits speeds in some advanced computer equipment are now approaching the theoretical limits of silicon, and for many years scien­tists have been experimenting with faster-working alternative materi­als. Harris Microwave Semiconductor, of Milpitas, Calif., recently in­troduced two digital integrated circuits made from one exotic alternative to silicon: gallium arsenide.

Electronic chips made from gallium arsenide have been available in the past, but usually only on a prototype basis. The new Harris chips, both of which are designed for use in sophisticated telecommunica­tion equipment and military electronic systems are the first commer­cially available off-the s/ze^gallium-arsenide 1C chips. The manufac­turer says they work five times faster than the speediest of today’s silicon-based counterparts.

Вариант 2

Silicon and Germanium

The two elements we can now concentrate on, as by far the most important semiconductors, are silicon and germanium. Silicon is one of the most plentiful elements in the world, but occurs in chemical com­pound such as sand (silica), from which it is difficult to extract pure silicon. The element can be isolated by the reduction of silica in an arc furnace. It then contains small quantities of calcium, iron, alumini­um, boron and phosphorous as principle impurities. Alternatively, sil­icon can be prepared by the pyrolytic reduction of silicon tetrachlo­ride and in this way the material can be obtained free from analytically detectable quantities of boron and phosphorus.