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Московский государственный университет приборостроения и информатики

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бакМИТ_КП2015 / Компоненты по вариантам / Супервизор / MCP111T_xxELB.pdf

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MCP111/112

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111; see Figure 4-1), TA = -40°C to +125°C.

	1.950									0.050

	1.945					VTRIP, V increasing				0.045
	1.945					VTRIP, V increasing				0.045
	1.940									0.040
			VHYS, Hysteresis
			VHYS, Hysteresis
	1.935
(V)	1.930								0.035		(V)
	1.930									0.030
	1.925				MCP111-195					0.030
TRIP	1.925				MCP111-195					0.025	Hyst
	1.920				max temp is					0.025
	1.920				max temp is
V	1.915				+85°C				0.020
V					+85°C				0.020
										0.015
	1.910									0.015
	1.905	VTRIP, V decreasing								0.010
	1.905	VTRIP, V decreasing								0.010
	1.900									0.005


	1.895									0.000
	1.895									0.000
	-60	-10			40		90	140
				Temperature (°C)

FIGURE 2-7: VTRIP and VHYST vs. Temperature (MCP111-195).

	3.040									0.100
	3.040	VTRIP, V increasing								0.100
	3.020	VTRIP, V increasing								0.098
	3.020									0.098
	3.000									0.096
(V)	3.000						VHYS, Hysteresis			0.094	(V)
	2.980						VHYS, Hysteresis			0.094
										0.092
										0.092
V											Hyst
TRIP	2.960					MCP112-300				0.090
TRIP	2.960					MCP112-300				0.090
	2.940									0.088


										0.086
	2.920

				VTRIP, V decreasing						0.084


	2.900									0.082
	2.900									0.082
	-60		-10			40		90	140
					Temperature (°C)

FIGURE 2-8:			VTRIP and VHYST vs.
Temperature (MCP112-300).
	4.800					0.180
	4.780	VTRIP, V increasing				0.170
	4.760					0.170
	4.760					0.160
	4.740					0.160
	4.740			VHYS, Hysteresis
	4.720			VHYS, Hysteresis
(V)	4.720					0.150	(V)
(V)	4.700					0.140	(V)
TRIP	4.700						Hyst
	4.680
	4.680
V	4.660			MCP112-475		0.130
	4.660			MCP112-475		0.130
	4.640					0.120
	4.620					0.120
	4.620					0.110
	4.600	VTRIP, V decreasing				0.110
	4.600	VTRIP, V decreasing
	4.580					0.100
	-60	-20	20	60	100	140

Temperature (°C)

FIGURE 2-9: VTRIP and VHYST vs. Temperature (MCP112-475).

	0.120	MCP111-195
		MCP111-195
	0.100	VDD = 1.7V
(V)	0.080			+125°C
(V)	0.060			+85°C
OL	0.060			+85°C
OL
V	0.040
	0.040
	0.020			-40°C
	0.020			+25°C
	0.000
	0.00		0.25	0.50	0.75	1.00

IOL (mA)

FIGURE 2-10:			VOL vs. IOL
(MCP111-195 @ VDD = 1.7V).
	0.080	MCP112-300
	0.070	MCP112-300
	0.070	VDD = 2.7V
		VDD = 2.7V
	0.060
(V)	0.050			+125°C
(V)	0.040
OL	0.040		+85°C
OL
V	0.030
V

	0.020				-40°C
	0.010			+25°C
	0.000
	0.00		0.25	0.50	0.75	1.00

IOL (mA)

FIGURE 2-11:		VOL vs. IOL
(MCP112-300 @ VDD = 2.7V).
	0.050
	MCP112-475
	VDD = 4.4V
	0.040
(V)	0.030		+125°C
(V)
OL		+85°C
V	0.020
	0.020
				-40°C
	0.010		+25°C
			+25°C
	0.000
	0.00	0.25	0.50	0.75	1.00

IOL (mA)

FIGURE 2-12: VOL vs. IOL

(MCP112-475 @ VDD = 4.4V).

DS21889D-page 6

♥ 2005 Microchip Technology Inc.

MCP111/112

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111;

see Figure 4-1), TA = -40°C to +125°C.
	0.120	MCP111-195		IOL = 1.00 mA
		MCP111-195		IOL = 1.00 mA
	0.100	VDD = 1.7 V
	0.100
	0.080			IOL = 0.75 mA
(V)	0.080
(V)	0.060			IOL = 0.50 mA
OL	0.060			IOL = 0.50 mA
OL
V	0.040
	0.040			IOL = 0.25 mA
				IOL = 0.25 mA
	0.020			IOL = 0.00 mA
				IOL = 0.00 mA
	0.000
	-40	0	40	80	120

Temperature (°C)

FIGURE 2-13:				VOL vs. Temperature
(MCP111-195 @ VDD = 1.7V).
	0.080	MCP112-300			IOL = 1.00 mA
	0.070	MCP112-300			IOL = 1.00 mA
	0.070	VDD = 2.7V
	0.060				IOL = 0.75 mA
	0.050				IOL = 0.75 mA
(V)	0.050
(V)	0.040				IOL = 0.50 mA
OL	0.040				IOL = 0.50 mA
OL
V	0.030
	0.030
	0.020				IOL = 0.25 mA
	0.020
	0.010				IOL = 0.00 mA
					IOL = 0.00 mA
	0.000
		-40	0	40	80	120

Temperature (°C)

FIGURE 2-14: VOL vs. Temperature (MCP112-300 @ VDD = 2.7V).

	0.050			IOL = 1.00 mA
	MCP112-475			IOL = 1.00 mA
	VDD = 4.4V
	0.040			IOL = 0.75 mA
				IOL = 0.75 mA
(V)	0.030			IOL = 0.50 mA
(V)
OL
OL
V	0.020
	0.020
				IOL = 0.25 mA
	0.010
				IOL = 0.00 mA
	0.000
	-40	0	40	80	120
			Temperature (°C)

	3.150	MCP112-300
		MCP112-300
	3.100	VDD = 3.1V
	3.100
(V)	3.050			-40 °C
	3.050			+25 °C
				+25 °C
OH	3.000
V	3.000
	2.950			+85 °C
	2.950
	2.900			+125 °C
	2.900
	0.00	0.25	0.50	0.75	1.00

IOL (mA)

FIGURE 2-16:		VOH vs. IOH
(MCP112-300 @ VDD = 3.1V).
	4.820			MCP112-475
				MCP112-475
	4.800			VDD = 4.8V
	4.780			+25 °C
(V)	4.760			+25 °C
(V)	4.760			-40 °C
OH	4.740
V	4.740
	4.720		+85 °C
			+85 °C
	4.700			+125 °C
	4.680			+125 °C
	4.680
	0.00	0.25	0.50	0.75	1.00

IOL (mA)

FIGURE 2-17:			VOH vs. IOH
(MCP112-475 @ VDD = 4.8V).
	600
(µs)	500		MCP111-195
Duration	400	MCP112-300
		MCP112-300
	300

Transient	200	MCP112-475
	200
	100

	0
	0.001	0.01	0.1	1	10

VTRIP(min) - VDD

FIGURE 2-15:	VOL vs. Temperature	FIGURE 2-18:	Typical Transient Response
(MCP112-475 @ VDD = 4.4V).		(25 °C).

♥ 2005 Microchip Technology Inc.

DS21889D-page 7

MCP111/112

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111;

see Figure 4-1), TA = -40°C to +125°C.
	350					MCP111-195
		VDD decreasing from:				MCP111-195
	300	VDD decreasing from:
	300	5V - 1.7V
	250			VDD decreasing from:
(µs)				VDD decreasing from:
(µs)	200			VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
RPD	150
t
	100
	50	VDD decreasing from:
	50	5V - 0V
	0
	-40	-15	10	35	60	85	110

Temperature (°C)

FIGURE 2-19: tRPD vs. Temperature (MCP111-195).

	160	MCP112-300
	140	MCP112-300			VDD decreasing from:
	140				VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
					VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
	120
(µs)	100		VDD decreasing from:
	80		VDD decreasing from:
			5V - 2.7V
RPD			5V - 2.7V
RPD	60
t

	40
	20	VDD decreasing from:
	20	5V - 0V
		5V - 0V
	0
		-40	-15	10	35	60	85	110

Temperature (°C)

FIGURE 2-20:					tRPD vs. Temperature
(MCP112-300).

	250
	250							MCP112-475

				VDD decreasing from:
				VDD decreasing from:
(µs)	200			5V - 4.4V
				5V - 4.4V

	150
RPD


	100		VDD decreasing from:
t	100		VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
			VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
	50
	50
			VDD decreasing from:
	0		5V - 0V

		-40 -15			10	35	60	85 110
		-40 -15			10	35	60	85 110

Temperature (°C)

	400					MCP111-195
	350					MCP111-195
	350
	300		VDD increasing from:
(µs)	250		VDD increasing from:
	250		0V - 2.1V
	200
RPU	200
RPU	150
t			VDD increasing from:

						VDD increasing
	100		0V - 2.8V			VDD increasing
	100					from:	0V - 4.0V
						from:	0V - 4.0V
	50					VDD increasing
	0					from: 0V - 5.5V
	0
	-40	-15	10	35	60	85	110

Temperature (°C)

FIGURE 2-22:			tRPU vs. Temperature
(MCP111-195).
	140					MCP112-300
			VDD increasing from:			MCP112-300
	120		VDD increasing from:
	120		0V - 3.1V
			0V - 3.1V
	100
(µs)	80		VDD increasing from:
	80		0V - 3.3V

RPU	60		VDD increasing from:
t			0V - 4.0V
	40		0V - 4.0V
	40
	20		VDD increasing from:
	0		0V - 5.5V
	0
	-40	-15	10	35	60	85	110
			Temperature (°C)
FIGURE 2-23:			tRPU vs. Temperature
(MCP112-300).
	250					MCP112-475
						MCP112-475
	200		VDD increasing from:
	200		0V - 4.9V
			0V - 4.9V
(µs)	150
(µs)			VDD increasing from:
RPU			VDD increasing from:
	100		0V - 5.0V

t
			VDD increasing from:
	50		0V - 5.5V
	0
	-40	-15	10	35	60	85	110

Temperature (°C)

FIGURE 2-21:	tRPD vs. Temperature	FIGURE 2-24:	tRPU vs. Temperature
(MCP112-475).		(MCP112-475).

DS21889D-page 8

♥ 2005 Microchip Technology Inc.

MCP111/112

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111;

see Figure 4-1), TA = -40°C to +125°C.
	60					MCP111-195
	55					MCP111-195
	55
	50	VDD increasing from:
	45	0V - 2.1V
(µs)	45			VDD increasing from:
	40			VDD increasing from:		VDD increasing
				0V - 5.5V		VDD increasing
						from: 0V - 4.0V
RT


t	35
	35
	30
	25				VDD increasing from:
					0V - 2.8V
	20
	-40	-15	10	35	60	85	110

Temperature (°C)

	0.1500						MCP112-475
							MCP112-475
	0.1400
	0.1300					VDD increasing from:
(µs)		VDD increasing from:				0V - 5.0V
(µs)	0.1200	0V - 4.9V
RT	0.1100
t

	0.1000				VDD increasing from:
					0V - 5.5V
	0.0900		VDD increasing from:
	0.0800		0V - 4.8V
	0.0800
		-40	-15	10	35	60	85	110

Temperature (°C)

FIGURE 2-25:	tRT vs. Temperature
(MCP111-195).

FIGURE 2-27:	tRT vs. Temperature
(MCP112-475).

0.4

VDD increasing from:

	0.35			0V - 3.1V
	0.3	VDD increasing from:
	0.3	0V - 3.3V
(µs)	0.25
(µs)	0.2
RT	0.2					V		increasing from:
RT						V	DD	increasing from:
t	0.15						DD
	0.15					0V - 5.5V
	0.1		VDD increasing from:
	0.1		0V - 4.0V
			0V - 4.0V
	0.05				MCP112-300
	0				MCP112-300
	0
		-40	-15	10	35	60		85	110

Temperature (°C)

FIGURE 2-26:	tRT vs. Temperature
(MCP112-300).

1.E10m-02
1.E-03
(A)	1m
1.E-04
	100µ
1.E10µ-05
1.E-06
	1µ					125°C
Leakage1.E-07						125°C
	100n
1.E-08
	10n
1.E-09
Drain-	1n
1.E-10						25°C
	100p					25°C
1.E-11											- 40°C
Open	10p										- 40°C
Open
1.E-12
	1p
1.E-13
	100f
	0	1	2	3	4	5	6	7	8	9	10 11 12 13 14

Pull-Up Voltage (V)

FIGURE 2-28: Open-Drain Leakage

Current vs. Voltage Applied to VOUT Pin (MCP111-195).

♥ 2005 Microchip Technology Inc.

DS21889D-page 9

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