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MCP111/112

Micropower Voltage Detector

Features

•Ultra-low supply current: 1.75 µA (max.)

•Precision monitoring options of:

-1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V, 4.38V and 4.63V

•Resets microcontroller in a power-loss event

•Active-low VOUT pin:

-MCP111 active-low, open-drain

-MCP112 active-low, push-pull

•Available in SOT23-3, TO-92, SC-70 and SOT-89-3 packages

•Temperature Range:

-Extended: -40°C to +125°C (except MCP1XX-195)

-Industrial: -40°C to +85°C (MCP1XX-195 only)

•Pb-free devices

Applications

•Critical Microcontroller and Microprocessor Power-Monitoring Applications

•Computers

•Intelligent Instruments

•Portable Battery-Powered Equipment

Description

The MCP111/112 are voltage-detecting devices designed to keep a microcontroller in reset until the system voltage has stabilized at the appropriate level for reliable system operation. These devices also operate as protection from brown-out conditions when the system supply voltage drops below the specified threshold voltage level. Eight different trip voltages are available.

Package Types

3-Pin SOT23-3/SC-70

3-Pin SOT-89

VSS	2	MCP111/112			1	VDD	3
VSS	2	MCP111/112			1	2	3
VOUT	1
			3	VDD	MCP111/112
					VOUT VDD VSS

3-Pin TO-92

VOUT

VDD VSS

Block Diagram

VDD
Comparator
+	VOUT
	Output
–	Driver
–
Band Gap
Reference
VSS

TABLE 1:	DEVICE FEATURES
Device		Output	Reset Delay	Package Pin Out	Comment
			Reset Delay	Package Pin Out
	Type	Pull-up Resistor	(typ)	(Pin # 1, 2, 3)
			(typ)	(Pin # 1, 2, 3)



MCP111	Open-drain	External	No	VOUT, VSS, VDD
MCP112	Push-pull	No	No	VOUT, VSS, VDD
MCP102					See MCP102/103/121/131 Data Sheet
MCP102	Push-pull	No	120 ms	RST, VDD, VSS	See MCP102/103/121/131 Data Sheet
					(DS21906)
MCP103					See MCP102/103/121/131 Data Sheet
MCP103	Push-pull	No	120 ms	VSS, RST, VDD	See MCP102/103/121/131 Data Sheet
					(DS21906)
MCP121					See MCP102/103/121/131 Data Sheet
MCP121	Open-drain	External	120 ms	RST, VDD, VSS	See MCP102/103/121/131 Data Sheet
					(DS21906)
MCP131		Internal (~95 kΩ)			See MCP102/103/121/131 Data Sheet
MCP131	Open-Drain	Internal (~95 kΩ)	120 ms	RST, VDD, VSS	See MCP102/103/121/131 Data Sheet
					(DS21906)


♥ 2005 Microchip Technology Inc.					DS21889D-page 1

MCP111/112

1.0ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V Input current (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA Output current (RST) . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA Rated Rise Time of VDD . . . . . . . . . . . . . . . . . . . . . . 100V/µs

All inputs and outputs (except RST) w.r.t. VSS

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to (VDD + 1.0V) RST output w.r.t. VSS . . . . . . . . . . . . . . . . . . . -0.6V to 13.5V Storage temperature . . . . . . . . . . . . . . . . . . .65°C to + 150°C Ambient temp. with power applied . . . . . . . -40°C to + 125°C Maximum Junction temp. with power applied . . . . . . . . 150°C ESD protection on all pins . . . . . . . . . . . . . . . . . . . . . . . . . ≥ 2 kV

DC CHARACTERISTICS

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.

Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111), TA = -40°C to +125°C.

Parameters		Sym	Min	Typ	Max	Units			Conditions


Operating Voltage Range		VDD	1.0	—	5.5	V
Specified VDD Value to VOUT low		VDD	1.0	—		V	I		= 10 µA, V		< 0.2V
Specified VDD Value to VOUT low		VDD	1.0	—		V	I	RST	= 10 µA, V	RST	< 0.2V
Operating Current		IDD	—	< 1	1.75	µA
VDD Trip Point	MCP1XX-195	VTRIP	1.872	1.900	1.929	V	TA = +25°C (Note 1)
			1.853	1.900	1.948	V	TA = -40°C to +85°C (Note 2)
	MCP1XX-240		2.285	2.320	2.355	V	TA = +25°C (Note 1)
			2.262	2.320	2.378	V	Note 2

	MCP1XX-270		2.591	2.630	2.670	V	TA = +25°C (Note 1)
			2.564	2.630	2.696	V	Note 2

	MCP1XX-290		2.857	2.900	2.944	V	TA = +25°C (Note 1)
			2.828	2.900	2.973	V	Note 2

	MCP1XX-300		2.886	2.930	2.974	V	TA = +25°C (Note 1)
			2.857	2.930	3.003	V	Note 2

	MCP1XX-315		3.034	3.080	3.126	V	TA = +25°C (Note 1)
			3.003	3.080	3.157	V	Note 2

	MCP1XX-450		4.314	4.380	4.446	V	TA = +25°C (Note 1)
			4.271	4.380	4.490	V	Note 2

	MCP1XX-475		4.561	4.630	4.700	V	TA = +25°C (Note 1)
			4.514	4.630	4.746	V	Note 2

VDD Trip Point Tempco		TTPCO	—	±100	—	ppm/°
						C

Note 1: Trip point is ±1.5% from typical value.

2:Trip point is ±2.5% from typical value.

3:This specification allows this device to be used in PICmicro® microcontroller applications that require the In-Circuit Serial Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements).

This specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (VOUT). The total time that the VOUT pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the VOUT pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.

4:This parameter is established by characterization and is not 100% tested.

DS21889D-page 2

♥ 2005 Microchip Technology Inc.

MCP111/112

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111), TA = -40°C to +125°C.

Parameters		Sym	Min	Typ	Max	Units	Conditions


Threshold Hysteresis	MCP1XX-195	VHYS	0.019	—	0.114	V	TA = +25°C
(min. = 1%, max = 6%)	MCP1XX-240		0.023	—	0.139	V
	MCP1XX-240		0.023	—	0.139	V
	MCP1XX-270		0.026	—	0.158	V
	MCP1XX-290		0.029	—	0.174	V
	MCP1XX-300		0.029	—	0.176	V
	MCP1XX-315		0.031	—	0.185	V
	MCP1XX-450		0.044	—	0.263	V
	MCP1XX-475		0.046	—	0.278	V

VOUT Low-level Output Voltage		VOL	—	—	0.4	V	IOL = 500 µA, VDD = VTRIP(MIN)
VOUT High-level Output Voltage		VOH	VDD – 0.6	—	—	V	IOH = 1 mA, For only MCP112
							(push-pull output)

Open-drain High Voltage on Output		V	—	—	13.5 (3)	V	MCP111 only,
		ODH					VDD = 3.0V, Time voltage >
							VDD = 3.0V, Time voltage >
							5.5V applied ≤ 100s,
							current into pin limited to
							2 mA, +25°C operation
							recommended
							Note 3, Note 4

Open-drain Output Leakage Current		IOD	—	0.1	—	µA
(MCP111 only)
Note 1: Trip point is ±1.5% from typical value.

2:Trip point is ±2.5% from typical value.

4:This parameter is established by characterization and is not 100% tested.

♥ 2005 Microchip Technology Inc.

DS21889D-page 3

MCP111/112

VTRIP

VDD

tRPU

tRPD

VOH

VOUT

VOL

tRT

FIGURE 1-1:

Timing Diagram.

AC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111), TA = -40°C to +125°C.

Parameters	Sym	Min	Typ	Max	Units	Conditions


VDD Detect to VOUT Inactive	tRPU	—	90	—	µs	Figure 1-1 and CL = 50 pF
						(Note 1)
VDD Detect to VOUT Active	tRPD	—	130	—	µs	VDD ramped from VTRIP(MAX) +
						250 mV down to VTRIP(MIN) –
						250 mV, per Figure 1-1,
						CL = 50 pF (Note 1)
VOUT Rise Time After VOUT Active	tRT	—	5	—	µs	For VOUT 10% to 90% of final
						value per Figure 1-1, CL = 50 pF
						(Note 1)

Note 1: These parameters are for design guidance only and are not 100% tested.

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111), TA = -40°C to +125°C.

Parameters	Sym	Min	Typ	Max	Units	Conditions


Temperature Ranges

Specified Temperature Range	TA	-40	—	+85	°C	MCP1XX-195
Specified Temperature Range	TA	-40	—	+125	°C	Except MCP1XX-195
Maximum Junction Temperature	TJ	—	—	+150	°C
Storage Temperature Range	TA	-65	—	+150	°C
Package Thermal Resistances

Thermal Resistance, 3L-SOT23	θJA	—	336	—	°C/W
Thermal Resistance, 3L-SC-70	θJA	—	340	—	°C/W
Thermal Resistance, 3L-TO-92	θJA	—	131.9	—	°C/W
Thermal Resistance, 3L-SOT-89	θJA	—	110	—	°C/W

DS21889D-page 4

♥ 2005 Microchip Technology Inc.

MCP111/112

2.0TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111; see Figure 4-1), TA = -40°C to +125°C.

	1.6
	1.4	MCP111-195								5.5V
	1.2									5.0V


(uA)	1									4.0V
	1
	0.8
DD	0.8									2.8V
	0.6									2.8V

I										2.1V
	0.4									1.7V
	0.4
	0.2									1.0V
	0.2
	0
	0
	-40	-20	0	20	40	60	80	100	120	140
				Temperature (°C)

FIGURE 2-1:				IDD vs. Temperature
(MCP111-195).

	1.6
	MCP111-195
	1.4
	1.2		+125°C
	1		+125°C
(uA)	1		+85°C
	0.8		+85°C

DD
DD	0.6
I					-40°C
					-40°C
	0.4
	0.2		+25°C
	0
	1.0	2.0	3.0	4.0	5.0	6.0

VDD (V)

FIGURE 2-4: IDD vs. VDD (MCP111-195).

	1.2	MCP112-300								5.5V
		MCP112-300								5.5V
	1									5.0V
(uA)	0.8									4.0V
(uA)	0.6									2.8V
										2.8V
DD										1.7V
										1.7V

I	0.4
	0.4			2.1V
				2.1V
	0.2									1.0V
	0
	-40	-20	0	20	40	60	80	100	120	140
				Temperature (°C)
FIGURE 2-2:				IDD vs. Temperature
(MCP112-300).

	1	MCP112-475
	0.9	MCP112-475								5.5V
	0.9									5.5V
	0.8				4.0V
	0.7		5.0V		4.0V					2.1V
(uA)	0.7		5.0V							2.1V
(uA)	0.6							2.8V
	0.6							2.8V
DD	0.5
DD	0.4			1.7V
I	0.4			1.7V
	0.3
	0.2				1.0V
	0.1				1.0V
	0.1
	0		0	20	40	60	80
	-40	-20	0	20	40	60	80	100	120	140

Temperature (°C)

FIGURE 2-3:	IDD vs. Temperature
(MCP112-475).

	1.6
	MCP112-300
	1.4
	1.2
(uA)	1
	0.8		+125°C

DD
DD	0.6	+85°C
I		+85°C

	0.4				-40°C
	0.2		+25°C
	0
	1.0	2.0	3.0	4.0	5.0	6.0

VDD (V)

FIGURE 2-5: IDD vs. VDD (MCP112-300).

	1.6
	MCP112-475
	1.4
	1.2
(uA)	1
(uA)	0.8		+125°C
DD	0.8		+125°C
DD	0.6
I		+85°C
		+85°C
	0.4				-40°C
					-40°C
	0.2		+25°C
	0		+25°C
	0
	1.0	2.0	3.0	4.0	5.0	6.0

VDD (V)

FIGURE 2-6: IDD vs. VDD (MCP112-475).

♥ 2005 Microchip Technology Inc.

DS21889D-page 5

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