Bologna / 06_TCAD_laboratory_MOSFET_GBB_20150223H1655

Compute curve slope using Inspect

•Curve  Inspector  select Snap to First Point

•Sets two point on the curve in the subthreshold region

Post-processing: turn-on IV varying Lg

• File Load Dataset  Select n16 and n25

•Select all just loaded datasets on the Datasets part and n2 dataset  gate  OuterVoltage

 To X-Axis  drain  TotalCurrent  To Left-Y-Axis

• increased Lg  (linearly) reduced

~ constant

Lg

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Post-processing: turn-on IV varying Tox

•File Load Dataset  Select n33 , n41

•Select all just loaded datasets on the Datasets part and n2 dataset  gate  OuterVoltage

 To X-Axis  drain  TotalCurrent  To Left-Y-Axis

• Then, select logY on the upper toolbar

• extremely strong dependence on

Tox

• A change on Tox of few nm has an enormous impact on turn-on curves

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Turn-on characteristics varying SubDop

•File Load Dataset  Select n48 , n55

•Select all just loaded datasets on the Datasets part and n2 dataset  gate  OuterVoltage

 To X-Axis  drain  TotalCurrent  To Left-Y-Axis

• increasing SubDop yield increased

• can be modulated by acting on SubDop

SubDop

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Post-processing: output characteristics varying Lg

•Right click on n6, n19 and n28  Visualize  Inspect (All Files)

•Select n2_des on the Datasets part  drain  OuterVoltage  To X-Axis  TotalCurrent  To Left-Y-Axis

•increased Lg  (linearly) reduced

•decreased output conductance

=

Lg

linear

region saturation calculated at low in the linear region

region

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Bibliography

•J.M. Rabaey, A. Chandrakasan, B. Nikolic, Digitial Integrated Circuits: A Design

Perspective, Prentice Hall, 2003.

•Giovanni Ghione, Dispositivi per la Microelettronica, McGraw-Hill, 1998.

•B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill, 2001.

•Sentaurus Synopys User’s guides

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