Bologna / 06_TCAD_laboratory_MOSFET_GBB_20150223H1655
.pdf
SDE command file (3)
;define gate-oxide y-coordinate (define Ygox (* Tox -1.0)) (define Ypol (- Ygox Hpol)) (define Lcont (- Xsub Xsp)) (define eps 5e-4)
;define spacer x-coordinate (define Xsp (+ Xg Lsp)) (define Ysub Hsub)
;define gate-oxide y-coordinate (define Ygox (* Tox -1.0)) (define Ypol (- Ygox Hpol)) (define Lcont (- Xsub Xsp)) (define eps 5e-4)
;*** GEOMETRY ***
;convention: x=length y=thickness
;substrate region
(sdegeo:create-rectangle (position 0.0 Ysub 0.0) (position Xsub 0.0 0.0) "Silicon" "R.Substrate" )
G. Betti Beneventi 21
SDE command file (4)
; Creating gate oxide
(sdegeo:create-rectangle (position 0.0 0.0 0.0) (position Xsp Ygox 0.0) "SiO2" "R.Gateox")
; Creating PolyReox (to be 'etched')
(sdegeo:create-rectangle (position 0.0 Ygox 0.0) (position Xsp Ypol 0.0) "Oxide" "R.PolyReox")
; Creating spacers regions
(sdegeo:create-rectangle (position (+ Xg Lreox) Ygox 0.0) (position Xsp Ypol 0.0 ) "Si3N4" "R.Spacer")
; Creating PolySi gate
(sdegeo:create-rectangle (position 0.0 Ygox 0.0 ) (position Xg Ypol 0.0) "PolySi" "R.Polygate")
; Rounding spacers
(sdegeo:fillet-2d (find-vertex-id (position Xsp Ypol 0.0 )) fillet-radius)
;*** CONTACTS ***
; Contact declarations
(sdegeo:define-contact-set "drain" 4.0 (color:rgb 0.0 1.0 0.0 ) "##") (sdegeo:define-contact-set "gate" 4.0 (color:rgb 0.0 0.0 1.0 ) "##") (sdegeo:define-contact-set "substrate" 4.0 (color:rgb 0.0 1.0 1.0 ) "##")
G. Betti Beneventi 22
SDE command file (5)
; Contact settings
(sdegeo:define-2d-contact (find-edge-id (position (+ Xsp eps) 0.0 0.0)) "drain")
(sdegeo:define-2d-contact (find-edge-id (position eps Ypol 0.0)) "gate")
(sdegeo:define-2d-contact (find-edge-id (position eps Ysub 0.0)) "substrate")
;*** DOPING ****
;Substrate
(sdedr:define-constant-profile "Const.Substrate" "BoronActiveConcentration" SubDop)
(sdedr:define-constant-profile-region "PlaceCD.Substrate" "Const.Substrate" "R.Substrate")
; Poly
(sdedr:define-constant-profile "Const.Gate" "PhosphorusActiveConcentration" 1e20)
(sdedr:define-constant-profile-region "PlaceCD.Gate" "Const.Gate" "R.Polygate")
; Source/Drain base line definitions
(sdedr:define-refinement-window "BaseLine.Drain" "Line" (position Xsp 0.0 0.0) (position Xsub 0.0 0.0))
G. Betti Beneventi 23
SDE command file (6)
; Source/Drain implant definition
(sdedr:define-gaussian-profile "Impl.SDprof" "PhosphorusActiveConcentration" "PeakPos" 0 "PeakVal" 1e20 "ValueAtDepth" SubDop "Depth" Xj "Gauss" "Factor" 0.4)
; Source/Drain implants
(sdedr:define-analytical-profile-placement "Impl.Drain" "Impl.SDprof" "BaseLine.Drain" "NoReplace" "Eval")
; Source/Drain extensions base line definitions
(sdedr:define-refinement-window "BaseLine.DrainExt" "Line" (position Xg 0.0 0.0) (position Xsp 0.0 0.0))
; Source/Drain implant definition
(sdedr:define-gaussian-profile "Impl.SDextprof" "PhosphorusActiveConcentration" "PeakPos" 0 "PeakVal" 5e18 "ValueAtDepth" SubDop "Depth" (* Xj 0.25) "Gauss" "Factor" 0.25)
; Source/Drain implants
(sdedr:define-analytical-profile-placement "Impl.DrainExt" "Impl.SDextprof" "BaseLine.DrainExt" "Symm" "NoReplace" "Eval")
G. Betti Beneventi 24
SDE command file (7)
;*** MESH ***
;Substrate
(sdedr:define-refinement-size "Ref.Substrate" (/ Ltot 4.0) (/ Hsub 8.0) Gpn
Gpn)
(sdedr:define-refinement-function "Ref.Substrate" "DopingConcentration" "MaxTransDiff" 1)
(sdedr:define-refinement-region "RefPlace.Substrate" "Ref.Substrate" "R.Substrate")
; Si Active region (channel)
(sdedr:define-refinement-window "RWin.Act" "Rectangle" (position 0.0 0.0 0.0) (position Xsub (* Xj 1.2) 0.0))
(sdedr:define-refinement-size "Ref.SiAct" (/ Lcont 4.0) (/ Xj 8.0) Gpn Gpn)
(sdedr:define-refinement-function "Ref.SiAct" "DopingConcentration" "MaxTransDiff" 1)
(sdedr:define-refinement-placement "RefPlace.SiAct" "Ref.SiAct" "RWin.Act"
)
; Gate oxide
(sdedr:define-refinement-size "Ref.GOX" (/ Ltot 4.0) (/ Tox 4.0) Gpn (/ Tox 8.0) )
(sdedr:define-refinement-region "RefPlace.GOX" "Ref.GOX" "R.Gateox" )
G. Betti Beneventi 25
SDE command file (8)
; Gate Multibox
;Multibox refinements are similar to regular refinement boxes, but here, ;the requested minimum mesh spacing can be graded. It starts with the ;minimum value given at a specified side of the refinement window and is ;expanded by a given factor from one mesh line to the next until the given ;maximum is reached.
(sdedr:define-refinement-window "MBWindow.Gate" "Rectangle" (position 0 Ypol 0.0) (position (* Xg 1.0) Ygox 0.0))
(sdedr:define-multibox-size "MBSize.Gate" (/ Lg 8.0) (/ Hpol 8.0) (/ Lg 10.0) 2e-4 1.0 -1.35)
(sdedr:define-multibox-placement "MBPlace.Gate" "MBSize.Gate" "MBWindow.Gate" )
; Channel Multibox
(sdedr:define-refinement-window "MBWindow.Channel" "Rectangle" (position 0.0 0.0 0.0) (position (* Xg 1.2) (* 0.5 Xj) 0.0))
(sdedr:define-multibox-size "MBSize.Channel" (/ Lg 8.0) (/ Xj 8.0) (/ Lg 10.0) 1e-4 1.0 1.35)
(sdedr:define-multibox-placement "MBPlace.Channel" "MBSize.Channel" "MBWindow.Channel" )
G. Betti Beneventi 26
SDE command file (9)
; Gate-Drain junction
(sdedr:define-refinement-size "Ref.J" (/ 0.016 6.0) 99 (/ 0.016 7.0) 66)
(sdedr:define-refinement-window "RWin.GD" "Rectangle" (position (- Xg 0.01) 0.0 0.0) (position (+ Xg Lreox) (* Xj 0.2) 0.0) )
(sdedr:define-refinement-placement "RefPlace.GJ" "Ref.J" "RWin.GD" )
; Building mesh
(sde:build-mesh "snmesh" "" "n@node@_half_msh")
; Reflect the device
(system:command "tdx -mtt -x -M 0 -S 0 -ren drain=source n@node@_half_msh n@node@_msh")
•Save Quit
DONE SDE PART
G. Betti Beneventi 27
Sdevice turn_on_des.cmd (1)
Select left Sdevice image tool Right Click Edit input Commands then write in the text file the following commands:
File
{
****INPUT FILES
*geometry, contacts doping and mesh Grid ="@tdr@"
*physical parameters
Parameter = "@parameter@"
****OUTPUT FILES
*distributed variables Plot = "n@node@_des.tdr"
*electrical characteristics at the electrodes Current= "n@node@_des.plt"
}
Electrode
{
* defines which contacts have to be treated as electrodes; initial bias
* & boundary conditions |
G. Betti Beneventi 28 |
|
Sdevice turn_on_des.cmd (2)
{ name="source" |
Voltage=0.0 } |
|
{ name="drain" |
Voltage=0.0 } |
|
{ |
name="gate" |
Voltage=0.0 } |
{ |
name="substrate" Voltage=0.0 } |
|
}
Physics
{
Mobility( DopingDep HighFieldSaturation Enormal ) EffectiveIntrinsicDensity( oldSlotboom )
}
Plot
{
* On mesh variables to be saved in the .tdr output file *- Doping Profiles
Doping DonorConcentration AcceptorConcentration
*- Charge, field, potential and potential energy SpaceCharge
G. Betti Beneventi 29
Sdevice turn_on_des.cmd (3)
ElectricField/Vector Potential
BandGap EffectiveBandGap BandGapNarrowing ElectronAffinity
ConductionBandEnergy ValenceBandEnergy
*- Carrier Densities:
EffectiveIntrinsicDensity IntrinsicDensity
eDensity hDensity
eQuasiFermiEnergy hQuasiFermiEnergy *- Currents and current components:
eGradQuasiFermi/Vector hGradQuasiFermi/Vector
eMobility hMobility eVelocity hVelocity
Current/Vector eCurrent/Vector hCurrent/Vector eDriftVelocity/Vector hDriftVelocity/Vector=
*- SRH & interfacial traps SRHrecombination
tSRHrecombination
*- Band2Band Tunneling & II
eBand2BandGeneration hBand2BandGeneration Band2BandGeneration
eAvalanche hAvalanche Avalanche
} |
G. Betti Beneventi 30 |
|