- •ACKNOWLEDGMENTS
- •TABLE OF CONTENTS
- •LIST OF TABLES
- •LIST OF FIGURES
- •INTRODUCTION
- •2.1.1 Structural Properties
- •2.1.2 Physical Properties
- •2.1.3 Electrical Properties of InN
- •2.1.3.1 Background Defects
- •2.1.4 Optical Properties of InN
- •2.2.1 Thermodynamic Models in Solid Solution
- •2.2.1.1 Regular Solution Model
- •2.2.1.2 Bonding in Semiconductor Solid Solutions Model
- •2.2.1.4 Strain Energy Model
- •2.2.1.5 First-Principal Models
- •2.2.2 Thermodynamic Analysis of InN
- •2.2.3 Phase Separation in InxGa1-xN
- •2.3.1 Growth Temperature and V/III Ratio
- •2.3.2 Nitrogen Source
- •2.4 Indium Nitride (InN) Growth Techniques
- •2.4.1 Chemical Vapor Deposition (CVD)
- •2.4.1.1 Metal-Organic Vapor Phase Epitaxy (MOVPE)
- •2.4.1.2 Hydride Vapor Phase Epitaxy (HVPE)
- •2.4.1.3 Plasma Enhanced Chemical Vapor Deposition (PECVD)
- •2.4.3 Atomic Layer Deposition (ALD)
- •2.5 Substrate Materials
- •2.5.1 Sapphire Substrate (Al2O3) (0001)
- •2.5.2 Silicon (Si) Substrate
- •2.5.4 Other Substrates
- •2.5.5 Buffer Layer
- •2.6 Summary for Growth of InN on Different Substrate
- •2.6.2 Growth on Silicon (Si) Substrate
- •2.6.3 Growth on Gallium Arsenide (GaAs) Substrate
- •2.6.4 Growth on Gallium Phosphorus (GaP) Substrate
- •2.7 Overview
- •THERMODYNAMIC ANALYSIS OF InN AND InXGa1-XN MOVPE GROWTH
- •3.1 Thermodynamic Analysis of InN and InxGa1-xN
- •3.1.1 Reaction Mechanism and Kinetics of InN MOVPE
- •3.2.1 Boundary Passivation Method with Hydrogen
- •5.1. Indium Nitride (InN) Growth Optimization
- •5.1.1. Substrate Selection
- •5.1.1.1. Sapphire (c-Al2O3 (0001))
- •5.1.1.2. Gallium Nitride (GaN/c-Al2O3 (0001))
- •5.1.1.3. Silicon (Si (111))
- •5.1.2. Substrate Preparation Procedure
- •5.1.3. Metal-Organic Vapor Phase Epitaxy (MOVPE) Reactor
- •5.1.4. Growth Chemistry and Conditions for InN Growth
- •5.1.5. Indium Nitride (InN) Growth and Optimization
- •5.1.5.1. Influence of Growth Temperature
- •5.1.5.2. Influence of Substrate Nitridation
- •5.1.5.3. Influence of N/In Ratio
- •5.1.5.4. Influence of Buffer Layer and Morphological Study
- •5.1.5.5. Influence of Pressure
- •5.1.5.6. Optical and Electrical Properties
- •5.1.5.7. Summary
- •5.1.6. Indium Nitride (InN) Droplet Formation
- •5.1.7. Annealing Effect
- •5.3. Inlet Tube Modification and Growth Results
- •CONCLUSIONS
- •LIST OF REFERENCES
- •BIOGRAPHICAL SKETCH
7
2.1.2 Physical Properties
Directly measured density of wurtzite InN is 6.89×103 kg m-3 at 25 °C [Hah40]. A
comparable value of 6.81×103 kg m-3 has been estimated from X-ray data [Pea67]. The cell volume, taken in conjunction with a molar mass of 128.827 g mol-1, yields densities of (6.81±0.05)×103 kg m-3 and 6.97×10 kg m-3 for the wurtzite and zinc blende polytypes, respectively. Bulk modulus has been calculated from first principles by a local-density approximation [Cam90] and by a linear muffin-tin orbital method [Kub89], suggesting a value of B = 165 GPa.
The five distinguishable second-order elastic moduli in a hexagonal crystal are c11, c12, c13, c33 and c44. Other researchers have utilized empirical and theoretical approaches to calculate the thermoelastic properties of the wurtzite structure InN [She91, Kim96a, Wri97, Mar98, Chi99]. Table 2-3 summarizes the room-temperature elastic constants from both experimental and theoretical results. Estimates of the principal transverse and
longitudinal elastic constants ct and cl are given in Table 2-4. Table 2-3. Elastic constants of wurtzite InN at room temperature.
Elastic |
Sheleg and |
Kim et al. |
Wright |
Marmalyuk |
Chisholm |
|
constants |
Savastenko |
[Kim96a] |
[Wri97] |
et al. |
et al. |
|
|
|
[She79] |
|
|
[Mar98] |
[Chi99] |
C11 (GPa) |
190 |
271 |
223 |
257 |
297.5 |
|
C12 |
(GPa) |
104 |
124 |
115 |
92 |
107.4 |
C13 |
(GPa) |
121 |
94 |
92 |
70 |
108.7 |
C33 |
(GPa) |
182 |
200 |
224 |
278 |
25.05 |
C44 |
(GPa) |
9.9 |
46 |
48 |
68 |
89.4 |
[Wan01]
Table 2-4. Physical properties of InN.
Property |
Value |
Ref. |
Comments |
8
Density (wurtzite) |
6.89×103 kg m-3 |
|
H. Hahn |
Meas. by displacement |
|
|
(6.81±0.05)×103 kg m-3 |
- |
Various X-ray data |
||
Density (zinc blende) |
6.97×103 kg m-3 |
|
S. Strite |
X-ray data |
|
Molar mass |
128.827g mol-1 |
|
|
|
|
Mol. Vol. (wurtzite) |
31.2 Å3 |
|
|
|
From lattice constants |
Mol. Vol. (zinc |
30.9 Å3 |
|
|
V. W. Chin |
From lattice constants |
blende) |
4.42×1011 dyn cm-2 |
|
Estimate |
||
ct |
12 |
-2 |
|
V. W. Chin |
Estimate |
cl |
2.65×10 |
dyn cm |
|
V. W. Chin |
Estimate |
7.1 eV |
|
|
|||
Deformation potential |
|
|
K. Osamura |
Reflectance meas. |
|
59.3 meV (478 cm-1) |
|||||
ħωTO |
57.1 meV (460 cm-1) |
T. L. Tansley |
Transmission meas. |
||
ħωLO |
86.2 meV (694 cm-1) |
K. Osamura |
Est.-Brout sum rule |
||
|
-1 |
) |
T. L. Tansley |
Est.-Brout sum rule |
|
|
89.2 meV (719 cm |
|
|
||
|
|
|
|
|
|
[Edg94], (reprinted from the Institute of Electrical Engineers with the permission of INSPEC)
The piezoelectric constant has not been reported, but its dependence on the dielectric
constants εr and e14 [Wol89] allows values of about 50 % of those found in AIN to be
inferred [Chi94].
Indium nitride has twelve phonon modes at the zone centre (symmetry group C6v),
three acoustic and nine optical with the acoustic branches essentially zero at k = 0. The
IR active modes are E1 (LO), E1(TO), A1(LO) and A1(TO). A transverse optical mode has
been identified at 478 cm-1(59.3 meV) by reflectance and 460 cm-1 (57.1 meV) by
transmission [Tan88]. In both reports the location of a longitudinal optical mode is
inferred from the Brout sum rule, giving respective values of 694cm-1 (86.1 meV) and
719cm-1 (89.2 meV).
In summary, the physical properties of InN films were briefly discussed, especially
the elastic constants used to calculate the strain energy and thus estimate the critical
thickness of InN film.
