129

Table 5-7. Growth conditions for InN.

Sample Growth condition

1Al2O3-LTGaN-InN, N/In = 50K

2Al2O3-LTInN-InN, N/In = 50K

3Si(111)-LTGaN-InN, N/In = 6K, after etching

4GaN/Al2O3-LTInN-InN, N/In = 50K, vertical inlet tube

5Al2O3-LTInN-InN,N/In = 50K, vertical inlet tube

The best electrical properties of our InN film were obtained from InN on Si (111)

and the net electron carrier concentration is 7.0 ×1018 cm3 at T = 266 K and 4.5 ×1017 cm3

at T = 41 K, and the mobility is 623 cm2/Vs at T = 266 K and 9288 cm2/Vs at T = 45 K

(Fig. 5.37 and Fig. 5.38).

Figure 5-38. Carrier concentration and mobility of InN on Si (111) at different characterization temperature using Hall measurement.

5.1.5.7. Summary

For Al2O3 (0001), the optimized growth condition of InN was found in terms of the

growth temperature, N/In ratio, buffer layer growth temperature, substrate nitridation.

The results are summarized in Table 5-8.