- •ACKNOWLEDGMENTS
- •TABLE OF CONTENTS
- •LIST OF TABLES
- •LIST OF FIGURES
- •INTRODUCTION
- •2.1.1 Structural Properties
- •2.1.2 Physical Properties
- •2.1.3 Electrical Properties of InN
- •2.1.3.1 Background Defects
- •2.1.4 Optical Properties of InN
- •2.2.1 Thermodynamic Models in Solid Solution
- •2.2.1.1 Regular Solution Model
- •2.2.1.2 Bonding in Semiconductor Solid Solutions Model
- •2.2.1.4 Strain Energy Model
- •2.2.1.5 First-Principal Models
- •2.2.2 Thermodynamic Analysis of InN
- •2.2.3 Phase Separation in InxGa1-xN
- •2.3.1 Growth Temperature and V/III Ratio
- •2.3.2 Nitrogen Source
- •2.4 Indium Nitride (InN) Growth Techniques
- •2.4.1 Chemical Vapor Deposition (CVD)
- •2.4.1.1 Metal-Organic Vapor Phase Epitaxy (MOVPE)
- •2.4.1.2 Hydride Vapor Phase Epitaxy (HVPE)
- •2.4.1.3 Plasma Enhanced Chemical Vapor Deposition (PECVD)
- •2.4.3 Atomic Layer Deposition (ALD)
- •2.5 Substrate Materials
- •2.5.1 Sapphire Substrate (Al2O3) (0001)
- •2.5.2 Silicon (Si) Substrate
- •2.5.4 Other Substrates
- •2.5.5 Buffer Layer
- •2.6 Summary for Growth of InN on Different Substrate
- •2.6.2 Growth on Silicon (Si) Substrate
- •2.6.3 Growth on Gallium Arsenide (GaAs) Substrate
- •2.6.4 Growth on Gallium Phosphorus (GaP) Substrate
- •2.7 Overview
- •THERMODYNAMIC ANALYSIS OF InN AND InXGa1-XN MOVPE GROWTH
- •3.1 Thermodynamic Analysis of InN and InxGa1-xN
- •3.1.1 Reaction Mechanism and Kinetics of InN MOVPE
- •3.2.1 Boundary Passivation Method with Hydrogen
- •5.1. Indium Nitride (InN) Growth Optimization
- •5.1.1. Substrate Selection
- •5.1.1.1. Sapphire (c-Al2O3 (0001))
- •5.1.1.2. Gallium Nitride (GaN/c-Al2O3 (0001))
- •5.1.1.3. Silicon (Si (111))
- •5.1.2. Substrate Preparation Procedure
- •5.1.3. Metal-Organic Vapor Phase Epitaxy (MOVPE) Reactor
- •5.1.4. Growth Chemistry and Conditions for InN Growth
- •5.1.5. Indium Nitride (InN) Growth and Optimization
- •5.1.5.1. Influence of Growth Temperature
- •5.1.5.2. Influence of Substrate Nitridation
- •5.1.5.3. Influence of N/In Ratio
- •5.1.5.4. Influence of Buffer Layer and Morphological Study
- •5.1.5.5. Influence of Pressure
- •5.1.5.6. Optical and Electrical Properties
- •5.1.5.7. Summary
- •5.1.6. Indium Nitride (InN) Droplet Formation
- •5.1.7. Annealing Effect
- •5.3. Inlet Tube Modification and Growth Results
- •CONCLUSIONS
- •LIST OF REFERENCES
- •BIOGRAPHICAL SKETCH
BIOGRAPHICAL SKETCH
Taewoong Kim was born to Doohoi Kim and Byungrae Yoo on July 31, 1968, in Seoul, Korea. He grew up in Seoul, Korea. He graduated from Youngil High School in 1986. He then went on to Inha University in Inchon City, where he graduated in 1993 with a Bachelor of Science in polymer science and engineering. He went on to graduate school in Inha University where he graduated in 1995 with a Master of Science in polymer science and engineering. In graduate school, he studied the ER-fluid (electrorheological fluid). After graduating, he worked for LG Chemical Company from 1995 to 1999, where he performed research on polymer processing.
He changed his major and joined the Chemical Engineering Department at University of Florida in August of 1999. There he researched semiconductor epitaxial InN film growth in Dr. Timothy Anderson’s group.
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