- •1 Combination Circuits
- •1.1 Circuitry ttl-elements with Shottky diodes
- •Levels of Integration
- •Typical Set of ttl iCs
- •Transistor-transistor logic (ttl)
- •1.2 Element with the open collector Open-collector outputs
- •Tristate outputs
- •1.3 Emitter-coupled logic (ecl)
- •Emitter-coupled multivibrator
- •Emitter-coupled Schmitt trigger
- •1.4 Decoder
- •Priority decoder
- •Binary Decoders
- •Decoder Networks
- •1.5 Coder units Encoder Networks
- •Binary Encoders
- •Priority Encoders
- •1.6 Multiplexers (Selectors)
- •1.7 Multiplexer Trees
- •Demultiplexer Networks
- •Encoder Networks
- •1.8 Demultiplexers (Distributors)
- •1.9 Applicanion of multiplexer
- •1.10 Code converters
- •1.11 Shifters
- •Shifter Networks
- •Barrel Shifter
- •1.12 Comparators
- •Window comparator
- •Digital comparators
- •2 Sequentional Circuits
- •2.1 Circuritry of flips
- •Sequential logic systems
- •Integrated flip-flops
- •Transparent flip-flops
- •Clocked rs flip-flop
- •Clocked d flip-flop
- •Flip-flops with intermediate storage
- •2.2 Flips types Single-edge-triggered flip-flops
- •2.3 Statik registers
- •2.4 Shift register Combinatorial shift register (barrel shifter)
- •Shift Registers
- •2.5 Counters
- •Asynchronous straight binary counter
- •Counters
- •Ripple Counters
- •Asynchronous bcd counter
- •2.6 Synchronous reversal counters
- •Synchronous straight binary counters
- •Synchronous bcd counter
- •Synchronous one-shot
- •Synchronous edge detector
- •Synchronous clock switch
- •2.7 Schmitt flip-flops Schmitt trigger
- •Inverting Schmitt trigger
- •Precision Schmitt trigger
- •3 Memory Devices
- •3.1 Circuitri of memori element Semiconductor memories
- •3.2 Mask-type lic of the rom
- •RaMs as shift registers
- •First-In-First-Out Memories (fifOs)
- •Fifo implementation using standard raMs
- •Error detection and correction
- •Parity bit
- •Hamming code
- •3.3 Rom with singl programming Read-only memories (roMs)
- •Mask-programmed roMs (mroMs)
- •Programmable roMs (proMs)
- •3.4 Memori element with electrical erase Electrically erasable proMs (eeproMs)
- •3.5 Static ram
- •Timing considerations
- •3.6 Dynamic raMs
- •Dynamic ram controllers
- •3.7 Devices programmed
- •Programmable logic array (pal)
Emitter-coupled Schmitt trigger
A non-inverting amplifier can also be implemented by using a differential amplifier. By applying positive feedback through a resistive voltage divider, we obtain the emitter-coupled Schmitt trigger shown in Fig.1.12. Both of its trigger thresholds are positive.
Fig. 1.12 - Emitter-coupled Schmitt trigger . Fig. 1.13 - Transfer characteristic.
By selecting suitable component values for the circuit, we can cause current IK to switch from one transistor to the other when the circuit changes state, without the transistors becoming saturated. This eliminates the storage time tS during switchover, and very high switching frequencies can be achieved. This principle is known as "unsaturated logic".
Emitter-coupled multivibrator
Due to the elimination of the storage times, considerably higher frequencies can be achieved with emitter-coupled multivibrators than using saturated transistors. A suitable circuit is shown in Fig.1.14.
To explain how the circuit operates, let us assume that the amplitude of the AC voltages present is small at all points in the circuit, say UPP 0.5 V. When T1 is OFF, its collector potential is virtually equal to the supply voltage, resulting in an emitter potential of V+ - 1.2 V at T2. Its emitter current is I1 + I2. In order to produce the required amplitude of oscillation at R1, the value R1 = 0.5 V/(I1 + I2) must therefore be selected. This gives us an emitter potential of V+ - 1.1 V at T4 under this operating condition. As long as T1 is OFF, the current from the left current source flows via capacitor C, causing the emitter potential of T1 to fall at a rate of
.
T1 begins to conduct when its emitter potential has fallen to V+ - 1.7 V. The base potential of T2 then falls by 0.5 V, turning the device off, and its collector potential rises to V+. The base potential of T1, rises with it via emitter follower T4, causing the emitter potential of T1 to jump to V+ - 1.2 V. This step is transferred via capacitor C to the emitter of T2, producing a potential increase from V+ - 1.2 V to V+ - 0.7 V across this device.
Fig. 1.14 - Emitter-coupled multivibrator. Fig. 1.15 - Voltage waveforms.
During the OFF-time of T2, current I2 flows via capacitor C and causes the emitter potential of T2 to fall at a rate of
.
Transistor T2 remains OFF until its emitter potential has fallen from V+ - 0.7 V to V+ - 1.7 V, giving a switching time of
or, more generally,
.
Similarly, we obtain
or, more generally,
.
The voltage waveforms for the circuit are shown in Fig.1.15. We can see that by selecting UPP = 0.5 V, none of the transistors is driven into saturation. This circuit allows frequencies of more than 100 MHz to be achieved with no great cost or complexity.
The circuit is particularly suitable for frequency modulation. For this purpose we select the currents I1 = I2 = I and control them with a common modulation voltage. In order to ensure that the oscillation amplitude at R1 remains constant, a diode can be connected in parallel with it in each case, as shown by the dashed lines. The oscillation frequency then becomes
,
where UD is forward voltage of the diodes.
Emitter-coupled multivibrators are available as monolithic integrated circuits, usually incorporating a TTL- or ECL-compatible output stage.
IC types:
TTL XR2209; fmax = 1 MHz (Exar)
TTL SN74LS624...629; fmax = 20 MHz (Texas Inst.)
ECL MC 1658; fmax = 150 MHz (Motorola)
