Allen and Holberg - CMOS Analog Circuit Design
.pdfAllen and Holberg - CMOS Analog Circuit Design |
Page VI.3-4 |
GAIN OF THE TWO-STAGE COMPARATOR
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gm1vid |
r ds2 |
r ds4 v1 gm6v1 |
r ds6 |
r ds7 |
vout |
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vid = vP - vN
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gm1 |
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gm6 |
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Av = |
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gds2 + gds4 gds6 + gds7 |
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W1W6 |
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Av = |
2 KNKP L1 L6 |
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λ2 + λ4 ) ( λ6 + λ7 ) I1I6 |
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Using |
W1 |
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λN = 0.015V-1, λP = 0.02V-1 |
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= 5, |
= 5, |
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L1 |
L6 |
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and Table 3.1-2 values; |
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Av = |
2 (17)(8)(5)(5) |
.10-6 |
95199.10-6 |
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= |
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(0.015+0.02)2 |
I1I6 |
I1I6 |
Assume I1 = 10 µA and I6 = 100 µA
Av = 3010
VOH - VOL = Resolution = 5 mV (assume)
Av
5
then VOH - VOL = 1000 . 3000 = 15 Volts
Allen and Holberg - CMOS Analog Circuit Design |
Page VI.3-8 |
SMALL SIGNAL PERFORMANCE
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+gm1 |
gm2 |
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vin |
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R1 C1 |
R2 C2 |
vout |
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vout(s) |
Aoωp1ωp2 |
vin(s) |
= ( s + ω p 1) ( s + ω p 2) |
ωp1 = 1 R1C1
ωp2 = 1 R2C2
Ao = gm1gm2R1R2
Example - (Fig 7.3-4) |
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I5 = 20µA ‘ R1 = gds2 + gds4 |
= 10µA = 3.33MΩ |
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ωp1 = (0.3pF)(3.33MΩ) = 1Mrps |
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I7 = 40µA ‘ R2 = gds6 + gds7 |
= 40µA(.03) |
= 833KΩ |
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ωp2 = (10pF)(833KΩ) |
= 120Krps |
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gm1 = 26µs, gm2 = 50.6µs ‘ |
Ao = 1099 |
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Allen and Holberg - CMOS Analog Circuit Design |
Page VI.3-9 |
TWO-STAGE, CMOS COMPARATOR
General Schematic
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VDD |
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M3 |
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M4 |
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M6 |
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vN |
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M1 |
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M2 |
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vP |
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vO |
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I8 |
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M8 |
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M5 |
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M7 |
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VSS |
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Key Relationships for Design: |
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i |
D |
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β |
(v |
G S |
- V |
T |
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i |
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(sat) = |
β |
[v |
DS |
(sat)]2 |
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2 |
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2 |
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or |
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vDS(sat) = |
2iD(sat) |
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β |
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Also,
g m = 2βID
where
β = KW L
Allen and Holberg - CMOS Analog Circuit Design |
Page VI.3-10 |
COMPARATOR DESIGN PROCEDURE
1. Set the output current to meet the slew rate requirements.
dV i = C dt
2. Determine the minimum sizes for M6 and M7 for the proper ouput
voltage swing.
vDS(sat) = |
2ID |
β |
3.Knowing the second stage current and minimum device size for M6, calculate the second stage gain.
-gm6
A2 = gds6 + gds7
4.Calculate the required first stage gain from A2 and gain specifications.
5.Determine the current in the first stage based upon proper mirroring and minimum values for M6 and M7. Verify that Pdiss is met.
6.Calculate the device size of M1 from A1 and IDS1.
A1 |
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-gm1 |
and gm1 |
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2K'W/L |
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gds1 |
+ gds3 |
IDS1 |
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7.Design minimum device size for M5 based on negative CMR requirement using the following (IDS1 = 0.5IDS5):
vG1(min) = VSS + VDS5 |
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IDS5 |
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+ VT1(max) |
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β1 |
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where VDS5 |
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2IDS5 |
= VDS5(sat) |
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β5 |
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8.Increase either M5 or M7 for proper mirroring.
9.Design M4 for proper positive CMR using:
vG1(max) = VDD - |
IDS5 |
(max) + VT1 |
- VTO3 |
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β3 |
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10.Increase M3 or M6 for proper mirroring.
11.Simulate circuit.
Allen and Holberg - CMOS Analog Circuit Design |
Page VI.3-11 |
DESIGN OF A TWO-STAGE COMPARATOR
Specifications: |
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Avo > 66 dB |
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Lambda = 0.05V-1 (L = 5 µm) |
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Pdiss < 10 mW |
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VDD = 10 V |
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CL = 2 pF |
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VSS = 0 V |
K'W |
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tprop < 1 µs |
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Recall that β = |
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L |
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CMR = 4-6 V |
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Output swing is VDD - 2V and VSS + 2V |
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1). For tprop << 1 µs choose slew rate at 100 V/µs |
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dvOUT |
= ( 2.10-12) ( 100.10-6) = 200 µA |
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I7 = CL |
dt |
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2). Size M6 and M7 to get proper output swing, |
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M7: |
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2V > vDS7(sat) = |
2I7 |
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2(200µA) |
→ |
W7 |
> 5 . 88 |
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β7 |
17.0µA/V2(W7/L7) |
L7 |
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M6: |
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2( IOUT+I7) |
2(400µA) |
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→ |
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2V > vDS6(sat) = |
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8.0µA/V2(W6/L6) |
L6 |
> 12 . 5 |
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-gm6 |
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2KP'W6 |
≈ -10 |
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3). A2 = gds6 + gds7 |
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λN + λP |
I6L6 |
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4). Avo = A1A2 = 66 dB ≈ 2000 → A1 = 200
Allen and Holberg - CMOS Analog Circuit Design |
Page VI.3-12 |
COMPARATOR DESIGN - CONT'D
5). Assuming vGS4 = vGS6, then I4 |
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S4 |
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I6 |
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S6 |
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1 |
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choose S4 = 1 which gives I4 = 12.5 (200µA) |
= 16.0 µA |
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S5 |
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200µA |
µA |
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Assume S5 = 1 which gives I5 = S |
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5.88 |
= 34 |
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= 17 µA |
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and I4 = 2 I5 |
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Choose |
I4 = 1 7 µA |
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to keep |
ratios greater than 1. |
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I5 = 34 µA |
W4 |
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W6 17 |
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L4 |
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200 |
= 1.06 ≈ 1.0 |
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Pdiss = 10( I7 + I5 ) = 2.34 mW < 10 mW |
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6). A1 |
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1 |
2K |
'W |
1 → |
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1 = [ (λ1 + λ4)A1] |
I |
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= |
λ1 |
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N |
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2 |
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= 200 |
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+ λ4 |
I4L1 |
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L1 |
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2KN' |
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W1 = 2 0 0 |
(Good for noise) |
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L1 |
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7). VDS5 = vG1(min) - VSS |
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I5 |
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- VT1(max) |
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β1 |
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VDS5 = 4 - 0 - |
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(34) |
-1 = 2.90 V |
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2(17.0)(200) |
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2I5 |
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2(34µ) |
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W5 |
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VDS5 = |
β5 |
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(17µ)S5 → |
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L5 |
> 0.48 |
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I5 |
34 |
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= 1.0 → |
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W5 |
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8). S5 = I7 S7 = 200 (5.88) |
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L5 |
= 1 . 0 |
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Allen and Holberg - CMOS Analog Circuit Design |
Page VI.3-13 |
COMPARATOR DESIGN - CONT'D
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9). VG1(max) = VDD - |
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I5 |
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- VTO3 (max) + VT1(min) |
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β3 |
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I5 |
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β3 = |
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V D D - VG1 (max) - |
VTO3 (max) + VT1(min) |
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34 µA |
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= 2.76.10-6 |
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1 0 - 6 - 1 + 0 . 5) 2 |
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W3 |
= (2.76)(2) |
= 0.69 |
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W4 > 0.69 |
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L3 |
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W4 |
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L3 |
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L4 |
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(Previously showed |
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> 1.06 |
so no modification is necessary) |
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L4 |
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10). Summary |
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Wdrawn |
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= |
(L - 1.6) |
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Design Ratios |
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Actual Values with 5 m |
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Proper Mirroring |
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minimum geometry |
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and LD = 0.8 m |
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W1 |
W2 |
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W1 |
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1000 |
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680 |
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L1 |
= L2 |
= 200 |
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L1 |
= L2 |
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W3 |
W4 |
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W3 |
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W4 |
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3.4 |
‘ |
5 |
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L3 |
= L4 |
= 1.0 |
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L3 |
= L4 |
= |
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W5 |
= 1.0 |
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W5 |
= 1.0 |
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3.4 |
‘ |
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L5 |
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L5 |
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5 |
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W6 |
= 12.5 |
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W6 |
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62.5 |
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60 |
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L6 |
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L6 |
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W7 |
= 5.88 |
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W7 |
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30 |
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30 |
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L7 |
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L7 |
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↑ |
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(Need to adjust for proper mirroring) |
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S6 |
S7 |
S |
= 2 S |
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