Добавил:
Опубликованный материал нарушает ваши авторские права? Сообщите нам.
Вуз: Предмет: Файл:

Davis W.A.Radio frequency circuit design.2001

.pdf
Скачиваний:
98
Добавлен:
23.08.2013
Размер:
2.47 Mб
Скачать

70 MULTIPORT CIRCUIT PARAMETERS AND TRANSMISSION LINES

(real) and lossy (imaginary) parts:

εr D εr0 r00

4.90

The revised propagation constant is found by substituting this into Eq. (4.89). The result can be simplified by taking the first two terms of the Taylor series expansion since ε00r − ε0r:

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ε00

 

 

D

˛

C

D

jk0

ε0

1

 

j

r

4.91

2εr0

 

 

 

 

 

 

 

r

 

 

 

so that

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

˛d D

k0εr00

 

 

 

 

4.92

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

εr0

 

 

 

 

 

 

 

 

 

 

ˇ

 

k0

 

 

 

 

 

 

 

4.93

 

 

 

 

 

D

 

 

ε0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

r

 

 

 

 

 

The power loss is proportional to exp 2˛z .

Coaxial Conductor Loss. The power loss per unit length, P$, is obtained by taking the derivative of the power at a given point along a transmission line:

P D P0e 2˛cz

4.94

 

dP

 

P$ D

 

D 2˛cP

4.95

dz

For a low-loss conductor where the dielectric losses are negligible, Eq. (4.87) becomes, with the help of Ohm’s law,

H D .E

4.96

where . is the metal conductivity. This would be the same as Eq. (4.88) if

ε )

.

4.97

 

 

With this substitution the wave impedance becomes the metal surface impedance:

 

-

 

) Zm D 1 C j

 

ω-0

 

4.98

 

ε

2.

 

At the surface there will be a longitudinal electric field of ZmJs directed in the zO direction. Thus, in a lossy line, the fields will no longer be strictly TEM. This longitudinal electric field produces energy flow into the conductor proportional

 

 

 

COMMONLY USED TRANSMISSION LINES

71

to Ez

H2O. This energy is dissipated in the center and outer conductor. The

O ð

 

 

 

 

 

 

 

 

 

 

 

power loss per unit length is found in the following way:

 

 

P$ D

Rm

Js Ð JsŁd$

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

D

Rm

ð

H

Ð

U H d$

 

 

2

 

 

 

 

 

 

 

D

Rm

H Ð HŁd$

 

 

 

 

 

2

 

 

D

RmV02,

 

1

 

1

 

4.99

 

 

 

 

 

C

 

 

 

+2 ln b/a 2

 

a

b

The power, P, transmitted down the line is found by the Poynting theorem:

 

 

1

 

b

2,

 

H

 

P

D

Z

 

E

ð

zrdrd2

 

 

2

 

 

<f mg

a

0

 

Ð O

 

 

 

,V2

 

 

 

 

 

 

D

 

0

 

 

 

 

4.100

 

+ ln b/a

 

 

 

 

The attenuation constant associated with conductor loss is found from Eq. (4.95):

˛

P$

D

 

Rm

 

a C b

4.101

2P

2+ ln b/a

ab

c D

 

 

while the dielectric loss found earlier is

 

 

 

 

 

˛d D

k0εr00

 

 

4.92

 

 

2

 

 

 

 

 

 

εr0

 

 

 

The total loss is found from Eq. (4.67).

4.7.4Microstrip Transmission Line

Microstrip has been a popular form of transmission line for RF and microwave frequencies for some time. The microstrip line shown in Fig. 4.18 consists of a conductor strip of width w on a dielectric of thickness h above a ground plane. Part of the electric field between the strip and the ground plane is in the dielectric and part in the air. The field is more concentrated in the dielectric than in the air. Consequently the effective dielectric constant, εeff, is somewhere between εr and 1, but closer to εr than 1. A variety of methods have been used to find εeff. However, rather than provide a proof, a simple empirically based procedure for synthesizing a microstrip line will be given. Microstrip line is not strictly a TEM type of transmission line and does have some frequency

72 MULTIPORT CIRCUIT PARAMETERS AND TRANSMISSION LINES

w

t

h

ε r

FIGURE 4.18 The microstrip transmission line.

dispersion. Unless microstrip is being used in a multi-octave frequency range application, the TEM approximation should be adequate. The synthesis problem occurs when the desired characteristic impedance, Z0, and the dielectric constant of the substrate, εr, are known and the geometrical quantity w/h is to be found. The synthesis equations, given by [4], are simple, and they give an approximate solution to the microstrip problem:

 

 

 

 

 

 

A

4

 

1

1

 

 

 

 

 

8

 

 

 

7 C

 

 

 

C

 

1 C

 

 

 

w

 

D

11

εr

 

0.81

εr

4.102

h

 

 

 

 

p

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

D

exp

Z0

εr C 1

 

1

 

4.103

 

 

 

 

 

 

 

 

 

 

 

 

 

42.4

 

 

 

 

 

 

 

 

The analysis equations given below by [5] are more accurate than the synthesis equations. The value given by Eqs. (4.102) and (4.103) provides an initial value for w/h that can be used in an iterative procedure to successfully solve the synthesis problem. This process depends on knowing εr and the conductor thickness, t. The solution results in the effective dielectric constant, εeff, needed to determine electrical line lengths and Z0. The procedure for the analysis procedure is shown below:

ua D

t/h

ln

1 C

 

 

 

4 exp 1

4.104

 

 

 

 

t/h C coth2 p

 

 

 

,

 

 

 

6.517w/h

 

ur D

1

 

 

 

1 C

 

 

1

 

 

ua

4.105

 

 

 

 

 

 

p

 

 

 

2

 

 

 

 

 

 

 

 

 

 

cosh

εr 1

 

 

w

 

 

 

 

 

 

 

 

 

ua D

 

 

 

 

 

 

 

 

 

 

 

 

 

4.106

 

C ua

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

ur D

w

 

 

 

 

 

 

 

 

 

 

 

 

 

4.107

 

C ur

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Z0a x

D

+

ln

f x

C

1 C

 

2 2

 

 

4.108

2,

x

 

x

 

f x

D 6 C 2, 6

exp[ 30.666/x 0.7528]

4.109

COMMONLY USED TRANSMISSION LINES

73

ε

x, ε

 

D

 

εr C 1

 

C

εr 1

1

C

10

a x b εr

 

 

 

4.110

 

 

 

 

 

 

x

 

 

 

 

 

 

e

 

r

 

 

2

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

1

 

ln

 

x

4

C x/52

2

 

 

1

ln

 

 

x

3

 

a x

D

C

 

 

 

 

 

C

1

C

4.111

 

49

 

x4 C 0.432

18.7

18.1

 

 

 

 

 

 

 

 

 

 

 

 

b ε

r

D

0.564

 

 

εr 0.9

 

0.053

 

 

 

 

 

 

 

 

4.112

 

 

 

εr C 3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

From the given value of t and trial solutions of w/h, Eqs. (4.104) to (4.107) give unique values for ua and ur. The characteristic impedance and effective dielectric constant are obtained using Eqs. (4.108) through (4.112):

Z0

w

 

 

 

Z0a ur

4.113

 

,

t,

εr

D

p

 

 

h

εe ur, εr

 

w

 

 

 

 

 

Z0a ua

2

εeff

 

 

D εe

 

4.114

 

,

t,

εr

 

 

h

Z0a ur

 

Since w/h increases when Z0 decreases, and vice versa, one very simple and effective method for finding the new approximation for w/h is done by using the following ratio:

w

 

D

w

 

calculated Z0 from Eq. (4.113)

4.115

h iC1

h i

desired Z0

This procedure has been codified in the program MICSTP. The effect of dielectric and conductor loss has been found [6,7,8]:

D

0.159A

Rm[32 ur2]

,

 

 

 

 

w

 

1

hZ0[32 C ur2]

 

 

 

h

 

 

 

 

 

 

 

 

 

 

4.116

˛c D

 

 

 

 

 

 

 

RmZ0

εeff

 

 

0.667ur

 

w

 

7.02 Ð 10 6A

 

 

 

 

 

 

 

ur C

 

 

 

,

 

½ 1

 

 

 

h

 

 

 

u

r C

1.444

h

 

 

 

 

 

 

1

 

 

 

 

2B

 

 

 

 

 

 

 

A D 1 C ur

1 C

 

ln

 

 

 

 

 

 

 

4.117

 

 

 

 

 

 

 

 

 

 

 

 

,

t

 

 

 

 

 

 

 

 

 

 

h,

 

 

w

½

,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

2

 

 

 

 

 

 

 

 

 

 

 

 

4.118

B D

 

 

w

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

2,w,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

The value for the loss caused by the dielectric is

 

εr

 

 

εeff

 

1 k0

ε00

 

˛

 

 

 

 

 

 

 

 

 

 

r

4.119

 

 

 

 

 

 

 

 

 

 

 

 

d D

2

ε

eff

 

ε

r

 

1

 

ε

0

 

 

p

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

r

 

74 MULTIPORT CIRCUIT PARAMETERS AND TRANSMISSION LINES

The definitions for Rm, ε0r, and ε00r were given previously as Eqs. (4.98) and (4.90). There are a variety of other transmission line geometries that could be studied, but these examples should provide information on the most widely used forms. There are cases where one line is located close enough to a neighboring line that there is some electromagnetic coupling between them. There are cases where interactions between discontinuities or nearby structures that would preclude analytic solution. In such cases solutions can be found from 2 12 and 3 dimensional numerical Maxwell equation solvers.

4.8SCATTERING PARAMETERS

This chapter began with a discussion of five ways of describing a two-port circuit in terms of its terminal voltages and currents. In principle, any one of these is sufficient. One of these uses h parameters and was popular in the early days of the bipolar transistor, since they could be directly measured for a transistor. For a similar reason, scattering parameters, or S parameters, were found conventient to use by RF and microwave engineers because the circuits could then be directly measured in terms of them at these frequencies. Scattering parameters represent reflection and transmission coefficients of waves, a quantity that can be measured directly at RF and microwave frequencies. However, these wave quantities can be directly related to the terminal voltages and currents, so there is a relationship between the scattering parameters and the z, y, h, g, and ABCD parameters.

Consider a one-port circuit excited with a voltage source EG with an internal impedance, ZG, as shown in Fig. 4.19. The quantity a will represent the wave entering into the port. The quantity b will represent the wave leaving the port. Both of these quantities are complex and can be related to the terminal voltage and

Z G

b G

a1

 

 

 

+

 

+

 

b1

 

E G

 

V

Z

 

 

 

 

 

 

ΓG

Γi

FIGURE 4.19 Wave reflections from an unmatched generator source.

SCATTERING PARAMETERS

75

current. The generator and the load are characterized by a reflection coefficient,G and i, respectively. The wave bG from the generator undergoes multiple reflections until finally the reflected wave from the load, b1, is obtained:

b1 D ibG C ibG G i C i2 GbG C Ð Ð Ð

 

D bG i[1 C i G C i G 2 C Ð Ð Ð]

 

D

bG i

 

4.120

1 i G

This last expression is the sum of a geometric series. Since i D b1/a1, an expression for the wave entering into the load can be found:

a1 D

bG

4.121

1 G i

The power actually delivered to the load is then

P1 D 21 ja1j2 jb1j2

4.122

From the definition of i and Eq. (4.121), the delivered power can be found:

P

 

1

 

jbGj2

1

 

 

 

2

4.123

D 2

j1 G ij2

j

ij

 

1

 

 

 

 

 

and when matched so that i D ŁG:

P

 

P

 

1

 

jbGj2

4.124

D

a D 2 1 j Gj2

1

 

 

The latter is the available power from the source. Similar expressions could be found for an n-port circuit.

Now the wave values will be related to the terminal voltages and currents. With reference to Fig. 4.19, Ohm’s law gives

EG D ZGI C V

4.125

A forward-going voltage wave, VC, can be related to the forward-going current by

VC D ZGŁ IC

4.126

This is based on the reason that if Z D ZŁG, V D VC, because V D 0. Similarly

V D ZGI

4.127

76 MULTIPORT CIRCUIT PARAMETERS AND TRANSMISSION LINES

The forward-going voltage and current can be expressed by means of Ohm’s law as follows:

 

ZŁ EG

 

ZŁ EG

 

VC D

 

G

 

 

D

 

G

 

4.128

Z

G C

ZŁ

2

Z

Gg

 

 

G

 

 

<f

 

IC D

 

EG

 

 

 

 

 

 

4.129

2

 

Z

Gg

 

 

 

 

 

<f

 

 

 

 

 

 

These voltages and currents represent rms values, so the incident power is

P

VCI

 

jEGj2

inc D <f

 

g D

4<fZGg

jVCj2 Ð <fZGg

D 4.130 jZGj2

The incident power, Pinc, is proportional to jaj2, and the reflected power, Pref, to jbj2. Taking the square root of a number to get a complex quantity is, strictly speaking, not possible mathematically unless a choice is made regarding the phase angle of the complex quantity. This choice is related to choosing ZŁG for a and ZG for b:

a D

 

Pinc

 

 

 

 

 

 

D

VC

<fZGg

 

 

4.131

 

 

 

 

 

 

 

ZGŁ

 

 

 

 

D

ICZGŁ

<fZGg

4.132

 

 

 

 

 

 

 

 

ZGŁ

 

 

 

 

and for b,

 

 

 

 

 

 

 

 

 

b D

 

 

 

 

 

 

 

 

 

Pref

 

 

 

 

 

 

D

V

<fZGg

 

 

4.133

 

 

 

 

 

 

ZG

 

 

 

 

 

I ZG

 

 

 

 

 

D

 

<f

ZG

g

4.134

 

 

 

ZG

 

 

 

 

 

 

 

 

 

 

From Eqs. (4.131) through (4.134) the forwardand reverse-going voltages and currents can be found in terms of the waves a and b. The total voltage and total current are then found:

V D VC C V D

aZGŁ C bZG

4.135

 

 

 

 

 

 

 

<fZGg

 

 

 

 

 

I D IC I D

 

a b

 

4.136

 

 

 

 

 

<fZGg

 

 

 

 

SCATTERING PARAMETERS

77

These are now in the form of two equations where a and b can be solved in terms of V and I. Multiplying Eq. (4.136) by ZG and adding to Eq. (4.135) gives the result

2a<fZGg

V C ZGI D <fZGg

which can be solved for a. In similar fashion b is found with the following results:

a D

 

1

V C ZGI

4.137

 

 

 

 

2

<fZGg

 

b D

 

1

V ZGŁ I

4.138

 

 

 

 

2

<fZGg

 

Ordinarily the generator impedance is equal to the characteristic impedance of a transmission line to which it is connected. The common way then to write Eqs. (4.137) and (4.138) is in terms of Z0, which is assumed to be lossless:

1

a D p V C Z0I 4.139 2 Z0

1

b D p V Z0I 4.140 2 Z0

The ratio of Eqs. (4.140) and (4.139) is

b D V/I Z0 D

aV/I C Z0

where is the reflection coefficient of the wave. The transmission coefficient is defined as the voltage across the load V due to the incident voltage VC:

 

V

D 1 C

b

 

 

 

T D

 

 

D 1 C

4.141

VC

a

This is to be contrasted with the conservation of power represented by

T

2

C

j j2 D 1.

 

 

 

j j

 

For the two-port circuit shown in Fig. 4.20, there are two sets of ingoing and outgoing waves. These four quantities are related together by the scattering matrix:

b1

D

S11

S12

a1

4.142

b2

S21

S22

a2

78 MULTIPORT CIRCUIT PARAMETERS AND TRANSMISSION LINES

a1

 

 

 

 

 

 

S

 

 

 

 

 

a 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

b 1

 

 

 

 

 

 

 

 

 

 

b 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FIGURE 4.20

The two-port with scattering parameters.

The individual S parameters are found by setting one of the independent variables to zero:

S11 D

b1

a1 a2D0

S12 D

b1

a2 a1D0

S21 D

b2

a1 a2D0

S22 D

b2

a2 a1D0

Thus S11 is the reflection coefficient at port-1 when port-2 is terminated with a matched load. The value S12 is the reverse transmission coefficient when port-1 is terminated with a matched load. Similarly S21 is the forward transmission coefficient, and S22 is the port-2 reflection coefficient when the other port is matched.

The formulas for converting between the scattering parameters and the volt– ampere relations are discussed in Section 4.1 and given in Appendix D. In each of these formulas there is a Z0 because a reflection or transmission coefficient is always relative to another impedance, which in this case is Z0. This is further corroborated by Eqs. (4.139) and (4.140) where the wave values are related to a voltage, current, and Z0.

4.9THE INDEFINITE ADMITTANCE MATRIX

Typically a certain node in a circuit is designated as being the ground node. Similarly, in an n-port network, at least one of the terminals is considered to be the ground node. In an n-port circuit in which none of the terminals is considered the reference node, it can be described by the indefinite admittance matrix. This matrix can be used, for example, when changing the y parameters of a common emitter transistor to the y parameters of a common base transistor. The indefinite admittance matrix has the property that the sum of the rows D 0 and the sum

THE INDEFINITE ADMITTANCE MATRIX

79

of the columns D 0. In this way the indefinite admittance matrix can be easily obtained from the usual definite y matrix, which is defined with at least one terminal connected to ground.

The derivation of this property is based on considering the currents in the indefinite circuit of Fig. 4.21. Jk is the current going into terminal k when all other terminals are connected to ground. It is therefore a result of independent current sources inside the n-port or currents resulting from initial conditions. The resulting currents going into each terminal are

i1

y11

y12

i2

y21

y22

..

D

..

..

.

 

.

.

in

yn1

yn2

. . . y1n

. . . y2n

... ...

. . . ynn

v1

J1

 

v2

J2

4.143

..

C

..

.

 

.

 

vn

Jn

 

The sum of all the equations represented by (4.143) gives the total current going into a node which by Kirchhoff’s law must be zero:

n n n n

yjivi D

ik

Jk D 0

4.144

iD1 jD1

kD1

kD1

 

All the terminal voltages except the jth are set to 0 by connecting them to the external ground. Then, since vk D6 0, the only nonzero left-hand side of Eq. (4.144) would be

n

vk

yjk D 0.

4.145

 

jD1

 

Thus the sum of the columns of the indefinite admittance matrix is 0.

V1 i 1

V2 i 2

V3 i 3

i n

Vn

FIGURE 4.21 An n-port indefinite circuit.

Соседние файлы в предмете Электротехника