Davis W.A.Radio frequency circuit design.2001
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REFERENCES |
295 |
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INPUT S22, MAG. AND PHASE (deg) |
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.7,-70. |
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Y(1,1) = |
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0.162912E-02 |
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0.156482E-01 |
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Y(1,2) = |
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0.304363E-03 |
J -0.759390E-03 |
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Y(2,1) = |
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0.360540E-01 |
J -0.262179E-02 |
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Y(2,2) = |
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0.483468E-02 |
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0.123116E-01 |
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Y --> S = YS OR S --> Y = SY |
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Z --> S = ZS OR S --> Z = SZ |
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ABCD --> S = AS OR S --> ABCD = SA |
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H --> S = HS OR S --> H = SH |
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H --> Z = HZ OR Z --> H =ZH |
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TABLE D.2 S Parameter to Hybrid Parameter Conversion Chart |
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S |
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h |
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S11 |
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S11 |
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h11 Z0 h22Z0 C 1 h12h21Z0 |
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h11 C Z0 h22Z0 C 1 h12h21Z0 |
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S12 |
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S12 |
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2h12Z0 |
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h11 C Z0 h22Z0 C 1 h12h21Z0 |
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S21 |
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S21 |
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2h21Z0 |
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h11 C Z0 h22Z0 C 1 h12h21Z0 |
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S22 |
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S22 |
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h11 C Z0 1 h22Z0 C h12h21Z0 |
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h11 C Z0 h22Z0 C 1 h12h21Z0 |
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1 C S11 1 C S22 S12S21 |
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h11 |
Z0 |
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h11 |
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1 S11 1 C SS22 C S12S21 |
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h12 |
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2S12 |
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h12 |
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1 S11 1 C SS22 C S12S21 |
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h21 |
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2S21 |
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h21 |
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1 S11 1 C SS22 C S12S21 |
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h22 |
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1 S11 1 S22 S12S21 |
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h22 |
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Z0 1 S11 1 C SS22 C S12S21 |
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REFERENCES
1.K. Kurokawa, “Power Waves and the Scattering Matrix,” IEEE Trans. Microwave Theory Tech., Vol. MTT-11, pp. 194–202, 1965.
298 TERMINATION OF A TRANSISTOR PORT WITH A LOAD
A numerical example illustrates the process. A given transistor with a set of common source S parameters at 2 GHz is given below:
S11 D 0.136 686
S21 D 3.025 66
S12 D 0.085 6 164
S22 D 0.304 6 136
These are then converted to two-port y parameters. These will be called y11, y31, y13, and y33. The indefinite admittance matrix is formed by adding a third row and column such that the sum of each row and the sum of each column is zero. The resulting 3 ð 3 set of y parameters are obtained:
y11 D 9.681 Ð 10 3 7.695 Ð 10 3
y12 D 12.77 Ð 10 3 C 6.776 Ð 10 3
y13 D 3.086 Ð 10 3 C .9194 Ð 10 3
y21 D 104.2 Ð 10 3 C 20.85 Ð 10 3
y22 D 82.89 Ð 10 3 C 14.39 Ð 10 3
y23 D 21.28 Ð 10 3 C 6.452 Ð 10 3
y31 D 113.8 Ð 10 3 C 13.15 Ð 10 3
y32 D 95.65 Ð 10 3 C 7.618 Ð 10 3
y33 D 18.19 Ð 10 3 C 5.533 Ð 10 3
These are then converted to three-port S parameters using Eq. (10.32) [1]:
S11 D 1.6718 6 168.12°
S12 D 1.6573 63.639°
S13 D 1.0103 613.684°
S21 D 3.1794 6 157.77°
S22 D 2.0959 614.185°
S23 D 0.7156 674.511°
S31 D 1.6455 670.181°
S32 D 2.7564 6 167.02°
S33 D 2.1085 6 153.87°
REFERENCES 299
At this point it is desired to transform these parameters to common gate parameters in which the gate is connected to ground through a short circuit. The resulting common gate two-port S parameters are found from Eqs. (E.9) through (E.12):
S11g D 5.317 6170.925°
S21g D 10.772 6 14.852°
S12g D 2.496 6177.466°
S22g D 6.250 6 7.553°
With the transistor now characterized in the orientation that it is to be used in the oscillator, a choice is made for the impedance at the generator side. If this impedance is chosen to be a 5 nH inductor, the output reflection coefficient is
o D 1.7775 6 30.35°
This shows that oscillation is possible under these loading conditions. The expressions given above for the revised S parameters can be found in [2] using slightly different notation.
REFERENCES
1.K. Kurokawa, “Power Waves and the Scattering Matrix,” IEEE Trans. Microwave Theory Tech., pp. 194–202, 1965.
2.R. M. Dougherty, “Feedback Analysis and Design Techniques,” Microwave J., Vol. 28, pp. 133–150, 1985.