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a		Micropower, Rail-to-Rail Input and Output
a		Operational Amplifiers

		OP196/OP296/OP496

FEATURES

Rail-to-Rail Input and Output Swing Low Power: 60 A/Amplifier

Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300 V max

High Open-Loop Gain: 500 V/mV Unity-Gain Stable

No Phase Reversal

		PIN CONFIGURATIONS
8-Lead Narrow-Body SO					8-Lead Narrow-Body SO
									V+

NULL	1		8	NC	OUT A	1		8
									OUT B
–IN A	2	OP196	7	V+	–IN A	2	OP296	7	OUT B
		OP196		OUT A			OP296
+IN A	3		6	OUT A	+IN A	3		6	–IN B
					V–				+IN B
V–	4		5	NULL	V–	4		5	+IN B

NC = NO CONNECT

APPLICATIONS

Battery Monitoring

Sensor Conditioners

Portable Power Supply Control

Portable Instrumentation

GENERAL DESCRIPTION

The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges.

The extremely low power requirements and guaranteed operation from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to control battery charging. Their dynamic performance, including 26 nV/√Hz voltage noise density, recommends them for battery-powered audio applications. Capacitive loads to 200 pF are handled without oscillation.

The OP196/OP296/OP496 are specified over the HOT extended industrial (–40°C to +125°C) temperature range. 3 V operation is specified over the 0°C to 125°C temperature range.

The single OP196 and the dual OP296 are available in 8-lead SO-8 surface mount packages. The dual OP296 is available in 8-lead PDIP. The quad OP496 is available in 14-lead plastic DIP and narrow SO-14 surface-mount packages.

8-Lead TSSOP

1			8	V+
OUT A				V+
–IN A		OP296		OUT B
+IN A		OP296		–IN B
V–				+IN B
	4		5
	4		5

14-Lead Narrow-Body SO


OUT A	1		14	OUT D
–IN A
–IN A	2		13	–IN D
+IN A				+IN D
+IN A	3	OP496	12	+IN D
V+				V–
V+	4		11	V–
+IN B				+IN C
+IN B	5		10	+IN C
–IN B				–IN C
–IN B	6		9	–IN C
				OUT C
OUT B	7		8	OUT C

8-Lead Plastic DIP

OUT A	1	OP296	8	V+
–IN A	2		7	OUT B
+IN A	3		6	–IN B
V–	4		5	+IN B

14-Lead Plastic DIP

OUT A	1		14	OUT D
–IN A	2		13	–IN D
+IN A	3		12	+IN D
V+	4	OP496	11	V–
+IN B	5		10	+IN C
–IN B	6		9	–IN C
OUT B	7		8	OUT C

14-Lead TSSOP

(RU Suffix)

	1		14
OUT A				OUT D
–IN A				–IN D
+IN A		OP496		+IN D
V+		OP496		V–
+IN B				+IN C
–IN B				–IN C
OUT B				OUT C
	7		8
	7		8

REV. C

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781/329-4700	www.analog.com
Fax: 781/326-8703	© Analog Devices, Inc., 2002

OP196/OP296/OP496–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS (@ VS = 5.0 V, VCM = 2.5 V, TA = 25 C, unless otherwise noted.)

Parameter	Symbol	Conditions		Min	Typ	Max	Unit

INPUT CHARACTERISTICS							µV
Offset Voltage	VOS	OP196G, OP296G, OP496G			35	300	µV
		–40°C ≤ TA ≤ +125°C				650	µV
		OP296H, OP496H				800	µV
		–40°C ≤ TA	≤ +125°C			1.2	mV
Input Bias Current	IB	–40°C ≤ TA	≤ +125°C		±10	±50	nA
Input Offset Current	IOS	–40°C ≤ TA ≤ +125°C			±1.5	± 8	nA
		–40°C ≤ TA ≤ +125°C				±20	nA
Input Voltage Range	VCM	0 V ≤ VCM ≤ 5.0 V,		0		5.0	V
Common-Mode Rejection Ratio	CMRR	0 V ≤ VCM ≤ 5.0 V,
		–40°C ≤ TA ≤ +125°C		65			dB
Large Signal Voltage Gain	AVO	RL = 100 kΩ,
		0.30 V ≤ VOUT ≤ 4.7 V,
		–40°C ≤ TA	≤ +125°C	150	200		V/mV
Long-Term Offset Voltage	VOS	G Grade, Note 1				550	µV
		H Grade, Note 1				1	mV
Offset Voltage Drift	∆VOS/∆T	G Grade, Note 2			1.5		µV/°C
		H Grade, Note 2			2		µV/°C
OUTPUT CHARACTERISTICS		IL = –100 µA
Output Voltage Swing High	VOH	IL = –100 µA		4.85	4.92		V
		IL = 1 mA		4.30	4.56		V
Output Voltage Swing Low	VOL	IL = 2 mA			4.1		V
Output Voltage Swing Low	VOL	IL = –1 mA			36	70	mV
		IL = –1 mA			350	550	mV
		IL = –2 mA			750		mV
Output Current	IOUT				± 4		mA
POWER SUPPLY		±2.5 V ≤ VS	≤ ±6 V,
Power Supply Rejection Ratio	PSRR	±2.5 V ≤ VS	≤ ±6 V,
		–40°C ≤ TA	≤ +125°C	85			dB
Supply Current per Amplifier	ISY	VOUT = 2.5 V, RL = ∞				60	µA
		–40°C ≤ TA ≤ +125°C			45	80	µA
DYNAMIC PERFORMANCE		RL = 100 kΩ					V/µs
Slew Rate	SR	RL = 100 kΩ			0.3		V/µs
Gain Bandwidth Product	GBP				350		kHz
Phase Margin	øm				47		Degrees
NOISE PERFORMANCE							µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz			0.8		µV p-p
Voltage Noise Density	en	f = 1 kHz			26		nV/√Hz
Current Noise Density	in	f = 1 kHz			0.19		pA/√Hz

NOTES

1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3. 2Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

–2–

REV. C

OP196/OP296/OP496

ELECTRICAL SPECIFICATIONS (@ VS = 3.0 V, VCM = 1.5 V, TA = 25 C, unless otherwise noted.)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit

INPUT CHARACTERISTICS						µV
Offset Voltage	VOS	OP196G, OP296G, OP496G		35	300	µV
		0°C ≤ TA ≤ 125°C			650	µV
		OP296H, OP496H			800	µV
		0°C ≤ TA ≤ 125°C			1.2	mV
Input Bias Current	IB			± 10	± 50	nA
Input Offset Current	IOS			± 1	± 8	nA
Input Voltage Range	VCM	0 V ≤ VCM ≤ 3.0 V,	0		3.0	V
Common-Mode Rejection Ratio	CMRR	0 V ≤ VCM ≤ 3.0 V,
		0°C ≤ TA ≤ 125°C	60			dB
Large Signal Voltage Gain	AVO	RL = 100 kΩ	80	200		V/mV
Long-Term Offset Voltage	VOS	G Grade, Note 1			550	µV
		H Grade, Note 1			1	mV
Offset Voltage Drift	∆VOS/∆T	G Grade, Note 2		1.5		µV/°C
		H Grade, Note 2		2		µV/°C
OUTPUT CHARACTERISTICS		IL = 100 µA
Output Voltage Swing High	VOH	IL = 100 µA	2.85			V
Output Voltage Swing Low	VOL	IL = –100 µA			70	mV
POWER SUPPLY		VOUT = 1.5 V, RL = ∞				µA
Supply Current per Amplifier	ISY	VOUT = 1.5 V, RL = ∞		40	60	µA
		0°C ≤ TA ≤ 125°C			80	µA
DYNAMIC PERFORMANCE		RL = 100 kΩ				V/µs
Slew Rate	SR	RL = 100 kΩ		0.25		V/µs
Gain Bandwidth Product	GBP			350		kHz
Phase Margin	øm			45		Degrees
NOISE PERFORMANCE						µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz		0.8		µV p-p
Voltage Noise Density	en	f = 1 kHz		26		nV/√Hz
Current Noise Density	in	f = 1 kHz		0.19		pA/√Hz

NOTES

1Long-term offset voltage is guaranteed by a 1,000 hour life test performed on three independent lots at 12 5°C, with an LTPD of 1.3. 2Offset voltage drift is the average of the 0°C to 25°C delta and the 25°C to 125°C delta.

Specifications subject to change without notice.

REV. C

–3–

OP196/OP296/OP496

ELECTRICAL SPECIFICATIONS (@ VS = 12.0 V, VCM = 6 V, TA = 25 C, unless otherwise noted.)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit

INPUT CHARACTERISTICS						µV
Offset Voltage	VOS	OP196G, OP296G, OP496G		35	300	µV
		0°C ≤ TA ≤ 125°C			650	µV
		OP296H, OP496H			800	µV
		0°C ≤ TA ≤ 125°C			1.2	mV
Input Bias Current	IB	–40°C ≤ TA ≤ +125°C		± 10	± 50	nA
Input Offset Current	IOS	–40°C ≤ TA ≤ +125°C		± 1	± 8	nA
		–40°C ≤ TA ≤ +125°C			± 15	nA
Input Voltage Range	VCM	0 V ≤ VCM ≤ 12 V,	0		12	V
Common-Mode Rejection Ratio	CMRR	0 V ≤ VCM ≤ 12 V,
		–40°C ≤ TA ≤ +125°C	65			dB
Large Signal Voltage Gain	AVO	RL = 100 kΩ	300	1000		V/mV
Long-Term Offset Voltage	VOS	G Grade, Note 1			550	µV
		H Grade, Note 1			1	mV
Offset Voltage Drift	∆VOS/∆T	G Grade, Note 2		1.5		µV/°C
		H Grade, Note 2		2		µV/°C
OUTPUT CHARACTERISTICS		IL = 100 µA
Output Voltage Swing High	VOH	IL = 100 µA	11.85			V
Output Voltage Swing Low	VOL	IL = 1 mA	11.30			V
Output Voltage Swing Low	VOL	IL = –1 mA			70	mV
		IL = –1 mA		± 4	550	mV
Output Current	IOUT			± 4		mA
POWER SUPPLY		VOUT = 6 V, RL = ∞				µA
Supply Current per Amplifier	ISY	VOUT = 6 V, RL = ∞			60	µA
		–40°C ≤ TA ≤ +125°C			80	µA
Supply Voltage Range	VS		3		12	V
DYNAMIC PERFORMANCE		RL = 100 kΩ				V/µs
Slew Rate	SR	RL = 100 kΩ		0.3		V/µs
Gain Bandwidth Product	GBP			450		kHz
Phase Margin	øm			50		Degrees
NOISE PERFORMANCE						µV p-p
Voltage Noise	en p-p	0.1 Hz to 10 Hz		0.8		µV p-p
Voltage Noise Density	en	f = 1 kHz		26		nV/√Hz
Current Noise Density	in	f = 1 kHz		0.19		pA/√Hz

NOTES

Specifications subject to change without notice.

–4–

REV. C

OP196/OP296/OP496

ABSOLUTE MAXIMUM RATINGS1
Supply Voltage . . . . . . . . . . .	. . . . . . .	. . . . . .	. . . .	. . . . . . 15 V
Input Voltage2 . . . . . . . . . . .	. . . . . . .	. . . . . .	. . . .	. . . . . . 15 V
Differential Input Voltage2 .	. . . . . . .	. . . . . .	. . . .	. . . . . . 15 V
Output Short Circuit Duration . . . . .		. . . . . .	. . . .	. . Indefinite
Storage Temperature Range			–65°C to +150°C
P, S, RU Package . . . . . . .	. . . . . . .	. . . . . .	–65°C to +150°C
Operating Temperature Range			–40°C to +125°C
OP196G, OP296G, OP496G, H . .		. . . . .	–40°C to +125°C
Junction Temperature Range			–65°C to +150°C
P, S, RU Package . . . . . . .	. . . . . . .	. . . . .	–65°C to +150°C
Lead Temperature Range (Soldering, 60 sec)			. . . .	. . . . 300°C

Package Type	JA3	JC		Unit
8-Lead Plastic DIP	103	43		°C/W
8-Lead SOIC	158	43		°C/W
8-Lead TSSOP	240	43		°C/W
14-Lead Plastic DIP	83	39		°C/W
14-Lead SOIC	120	36		°C/W
14-Lead TSSOP	180	35		°C/W

NOTES

1Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted.

2For supply voltages less than 15 V, the absolute maximum input voltage is equal to the supply voltage.

3θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket for P-DIP package; θJA is specified for device soldered in circuit board for SOIC and TSSOP packages.

ORDERING GUIDE

	Temperature	Package	Package
Model	Range	Description	Option

OP196GS	–40°C to +125°C	8-Lead SOIC	SO-8
OP296GP*	–40°C to +125°C	8-Lead Plastic DIP	N-8
OP296GS	–40°C to +125°C	8-Lead SOIC	SO-8
OP296HRU	–40°C to +125°C	8-Lead TSSOP	RU-8
OP496GP*	–40°C to +125°C	14-Lead Plastic DIP	N-14
OP496GS	–40°C to +125°C	14-Lead SOIC	SO-14
OP496HRU	–40°C to +125°C	14-Lead TSSOP	RU-14

*Not for new design, obsolete April 2002.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP196/OP296/OP496 feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. C

–5–

OP196/OP296/OP496–Typical Performance Characteristics

	250

							VS	= 3V
	200						TA = 25 C
	200						TA = 25 C
– Amplifiers							COUNT = 400
	150



QUANTITY	100
	100

	50
	50
	0


	–250 –200	–150 –100 –50		0	50	100 150			200	250
			INPUT OFFSET VOLTAGE – V
	TPC 1. Input Offset Voltage Distribution
	250
	250

							VS	= 5V
	200						TA = 25 C
	200						TA = 25 C
Amplifiers–							COUNT = 400
	150

QUANTITY
QUANTITY	100
	100
	50
	50
	0
	0
	–250 –200	–150 –100 –50		0	50	100 150			200	250
			INPUT OFFSET VOLTAGE – V

TPC 2. Input Offset Voltage Distribution

	25
		VS =	5V
		VCM = 2.5V
Amplifiers–	20	TA = –40 C TO 125 C
		TA = –40 C TO 125 C

	15
QUANTITY	15
QUANTITY	10
	10
	5
	5

–4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5 0 0.5 1.0 INPUT OFFSET DRIFT, TCVOS – V/ C

TPC 4. Input Offset Voltage Distribution (TCVOS)

	25
	25
		V	S = 12V
		VCM = 6V
Amplifiers–	20	TA = –40 C TO 125 C
	20	TA = –40 C TO 125 C
	15
QUANTITY	15
QUANTITY	10
	10
	5
	5

–4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 –0.5 0 0.5 1.0 1.5 INPUT OFFSET DRIFT, TCVOS – V/ C

TPC 5. Input Offset Voltage Distribution (TCVOS)

QUANTITY – Amplifiers

250

			VS	= 12V
200			TA = 25 C
200			TA = 25 C
			COUNT = 400
150


100
100
50


0


–250 –200 –150 –100 –50	0	50 100 150 200 250

INPUT OFFSET VOLTAGE – V

	600
	400					3V	VS	12V
V	400						VS
							VS
						VCM = 2
–
VOLTAGE	200
VOLTAGE
OFFSET	0
OFFSET
INPUT	–200
INPUT
	–400	–50	–25	0	25	50	75	100	125	150
	–75	–50	–25	0	25	50	75	100	125	150
					TEMPERATURE – C

TPC 3. Input Offset Voltage Distribution

TPC 6. Input Offset Voltage vs. Temperature

–6–

REV. C

														OP196/OP296/OP496
	25											1000
								VS = 5V
								VCM = 2.5V								VS = 1.5V
	20															VS = 1.5V
– nA											– mV	100
CURRENT											VOLTAGE	100	SOURCE
CURRENT	15										VOLTAGE


INPUTBAIS											OUTPUT			SINK
INPUTBAIS	5										OUTPUT
	10
												10
	0	–50	–25	0	25	50	75	100	125	150		1
	–75	–50	–25	0	25	50	75	100	125	150		0.001	0.01	0.1	1	10
					TEMPERATURE – C							0.001	0.01	0.1	1	10
					TEMPERATURE – C									LOAD CURRENT – mA

TPC 7. Input Bias Current vs. Temperature

		16
	– nA	12
	BIAS CURRENT	12
	BIAS CURRENT	8
	INPUT	8
	INPUT

SUPPLY VOLTAGE – V

TPC 8. Input Bias Current vs. Supply Voltage

	40
	30								VS = 2.5V
	30								TA = 25 C
nA	20
–
BIAS CURRENT	10
	0
	–10
INPUT	–20
INPUT
	–30
	–40
	–2.5	–2.0	–1.5	–1.0	–0.5	0	0.5	1.0	1.5	2.0	2.5

COMMON-MODE VOLTAGE – V

TPC 10. Output Voltage to Supply Rail vs. Load Current

	1000
					VS = 2.5V
– mV	100
VOLTAGE	100	SOURCE
		SOURCE
			SINK

OUTPUT	10
OUTPUT
	1
	0.001	0.01	0.1	1	10

LOAD CURRENT – mA

TPC 11. Output Voltage to Supply Rail vs. Load Current

	1000
					VS = 6V
– mV	100
VOLTAGE	100	SOURCE
		SOURCE
			SINK

OUTPUT	10
OUTPUT
	1
	0.001	0.01	0.1	1	10
			LOAD CURRENT – mA

TPC 9. Input Bias Current vs. Common-Mode Voltage

TPC 12. Output Voltage to Supply Rail vs. Load Current

REV. C

–7–

OP196/OP296/OP496
	4.95					IL = 100 A
						IL = 100 A
	4.70
– V						IL = 1mA
VOLTAGE						IL = 1mA
	4.45

OUTPUT	4.2					IL = 2mA
OUTPUT			VS = 5V
OH			VS = 5V
OH
V	3.85
	3.85
	3.7	–50	–25	0	25	50	75	100	125	150
	–75	–50	–25	0	25	50	75	100	125	150
					TEMPERATURE – C

TPC 13. Output Voltage Swing vs. Temperature

	0.80
								VS = 5V
– V	0.60
– V						IL = –1mA
VOLTAGE						IL = –1mA
	0.50

OUTPUT	0.30
OUTPUT
OL
V	0.10
	0.10
						IL = –100 A
	–75	–50	–25	0	25	50	75	100	125	150
					TEMPERATURE – C

TPC 14. Output Voltage Swing vs. Temperature

	90
	80				VS = 2.5V
					TA = 25 C
	70
dB	60		GAIN
–
GAIN	50
	50
	40					0
OPEN-LOOP	40					0
	30					45	SHIFT – C
	20		PHASE			90
			PHASE
	10					135
	10					135	PHASE
	0					180

	–10	100	1k	10k	100k	225
	10	100	1k	10k	100k	1M
			FREQUENCY – Hz

TPC 15. Open-Loop Gain and Phase vs. Frequency (No Load)

	90
	80				VS = 2.5V
					TA = –40 C
	70
– dB	60		GAIN
– dB			GAIN
GAIN	50
GAIN	40					0
OPEN-LOOP	40					0
	30					45	SHIFT – C
	20		PHASE			90
			PHASE
	10					135
	10					135	PHASE
	0					180

	–10	100	1k	10k	100k	225
	10	100	1k	10k	100k	1M
			FREQUENCY – Hz

TPC 16. Open-Loop Gain and Phase vs. Frequency (No Load)

	90
	80				VS = 2.5V
					TA = 125 C
	70
dB	60
–				GAIN
GAIN	50			GAIN
	50
	40					0
OPEN-LOOP	40					0
	30					45	SHIFT – C
	20			PHASE		90
				PHASE
	10					135
	10					135	PHASE
	0					180

	–10	100	1k	10k	100k	225
	10	100	1k	10k	100k	1M

FREQUENCY – Hz

TPC 17. Open-Loop Gain and Phase vs. Frequency (No Load)

	950
								VS = 5V
								0.3V < VO < 4.7V
	800							RL = 100k
V/mV	650
GAIN –	650
GAIN –
OPEN-LOOP	500
	350

	200	–50	–25	0	25	50	75	100	125	150
	–75	–50	–25	0	25	50	75	100	125	150
					TEMPERATURE – C

TPC 18. Open-Loop Gain vs. Temperature

–8–

REV. C

										OP196/OP296/OP496
	600							160
					VS = 5V			140			VS = 2.5V
	500				VS = 5V						T	= 25 C
	500				TA = 25 C			120			A
V/mV					TA = 25 C			120			ALL CHANNELS
V/mV	400							100
								100
–								80
GAIN							– dB	80
GAIN	300						– dB	60
LOOP-OPEN	300						CMRR	60
LOOP-OPEN							CMRR	40
								40
	200							20
								20
	100							0
	100
								–20
	0	100	50	10	2	1		–40	1k	10k	100k	1M	10M
	150	100	50	10	2	1		100	1k	10k	100k	1M	10M
				LOAD – k						FREQUENCY – Hz

TPC 19. Open-Loop Gain vs. Resistive Load

	70
	60				VS = 2.5V
					RL = 10k
	50				TA = 25 C
dB	40
–	40
–
GAIN	30
GAIN
CLOSED-LOOP	20
	10
	0
	–10
	–10
	–20
	–30	100	1k	10k	100k	1M
	10	100	1k	10k	100k	1M

FREQUENCY – Hz

TPC 20. Closed-Loop Gain vs. Frequency

	1000
	900
	800	VS = 2.5V
		TA = 25 C
–		TA = 25 C
IMPEDANCE	700
	600		ACL = 10
	500		ACL = 10
	500

OUTPUT	400
	300				ACL = 1
	300

	200
	100
	0
	100	1k	10k	100k	1M
			FREQUENCY – Hz

TPC 21. Output Impedance vs. Frequency

TPC 22. CMRR vs. Frequency

	160
	140					VS = 5V
	140					TA = 25 C
						TA = 25 C
	120
	100
dB	80
–				+PSRR
PSRR	60			+PSRR
	60
	40
	40		–PSRR
			–PSRR
	20
	0
	–20
	–40	100	1k	10k	100k	1M	10M
	10	100	1k	10k	100k	1M	10M
				FREQUENCY – Hz

TPC 23. PSRR vs. Frequency

	6
				VS = 2.5V
	5			VIN = 5V p-p
V				AV = 1
–				RL = 100k
SWING				RL = 100k
	4

OUTPUT	3
OUTPUT
MAXIMUM	2
MAXIMUM	1
	1
	0
	1k	10k	100k	1M
			FREQUENCY – Hz

TPC 24. Maximum Output Swing vs. Frequency

REV. C

–9–

OP196/OP296/OP496
	90
	80
A	70
A					VS = 12V
–
/AMPLIFIER	60
	60
	50

SY					V	= 5V
I	40				S
	40
	30			VS = 3V
	30
	20
	–75	–50	–40 –25	0 25	50	75	85	100	125	150
				TEMPERATURE – C

TPC 25. Supply Current/Amplifier vs. Temperature

	55
						TA = 25 C
	50
A
–
/AMPLIFIER	45
	45
SY 40
I
	35	3	5	7	9	11	12	13
	1	3	5	7	9	11	12	13

SUPPLY VOLTAGE – V

TPC 26. Supply Current/Amplifier vs. Supply Voltage

	80
	70			VS = 2.5V
Hz	70			TA = 25 C
Hz				VCM = 0V
– nV/	60
DENSITY	40
	50
NOISE	30
VOLTAGE	10
	20
	0	10	100	1k
	1	10	100	1k
			FREQUENCY – Hz

TPC 27. Voltage Noise Density vs. Frequency

	0.6
				VS = 2.5V
Hz	0.5			TA = 25 C
Hz				VCM = 0V
– pA/	0.4
DENSITY	0.3
DENSITY
NOISE	0.2
CURRENT	0.1
CURRENT
	0	10	100	1k
	1	10	100	1k

FREQUENCY – Hz

TPC 28. Input Bias Current Noise Density vs. Frequency

	10
	8	VS = 6V
	6	TA = 25 C
	6	TO 0.1%		OUTPUT SWING
		TO 0.1%

	4
V	2
–	2
STEP	0
INPUT	–2
	–2
	–4				– OUTPUT SWING
					– OUTPUT SWING
	–6
	–8
	–10	5	10	15	20	25	30
	0	5	10	15	20	25	30
			SETTLING TIME – s

TPC 29. Settling Time to 0.1% vs. Step Size

	2mV	1s
100
90
10	VS = 2.5V
0%	AV = 10k
	AV = 10k
	en = 0.8 V p-p

TPC 30. 0.1 Hz to 10 Hz Noise

–10–

REV. C

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