- •Features
- •Description
- •Block Diagram
- •Memory Array
- •Memory Architecture Diagram
- •Device Operation
- •Read
- •Program
- •Block Erase Addressing
- •Read/Program Mode Summary
- •Power-on/Reset State
- •Status Register Format
- •Absolute Maximum Ratings*
- •DC and AC Operating Range
- •DC Characteristics
- •AC Characteristics
- •AC Waveforms
- •Waveform 1 – Inactive Clock Polarity Low
- •Waveform 2 – Inactive Clock Polarity High
- •Reset Timing (Inactive Clock Polarity Low Shown)
- •Command Sequence for Read/Write Operations (except Status Register Read)
- •Write Operations
- •Main Memory Page Program through Buffers
- •Buffer Write
- •Read Operations
- •Main Memory Page Read
- •Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer)
- •Buffer Read
- •Detailed Bit-level Read Timing – Inactive Clock Polarity Low
- •Main Memory Page Read
- •Buffer Read
- •Status Register Read
- •Detailed Bit-level Read Timing – Inactive Clock Polarity High
- •Main Memory Page Read
- •Buffer Read
- •Status Register Read
- •Sector Addressing
- •Ordering Information
- •Pin Configurations
- •Input Test Waveforms and Measurement Levels
- •Output Test Load
AT45DB321
Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
FLASH MEMORY ARRAY
PAGE (528 BYTES)
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BUFFER 1 TO |
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MAIN MEMORY |
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BUFFER 2 TO |
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MAIN MEMORY |
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PAGE PROGRAM |
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MAIN MEMORY |
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PAGE PROGRAM |
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THROUGH BUFFER 2 |
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PAGE PROGRAM |
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BUFFER 1 (528 BYTES) |
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BUFFER 2 (528 BYTES) |
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MAIN MEMORY PAGE |
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BUFFER 1 |
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PROGRAM THROUGH |
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BUFFER 2 |
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WRITE |
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BUFFER 1 |
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WRITE |
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I/O INTERFACE |
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SI |
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Main Memory Page Program through Buffers |
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· Completes writing into selected buffer |
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· Starts self-timed erase/program operation |
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CS |
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SI |
CMD |
r , PA12-6 |
PA5-0, BFA9-8 |
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BFA7-0 |
n |
n+1 |
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Last Byte |
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Buffer Write |
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· Completes writing into selected buffer |
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CS |
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SI |
CMD |
X |
X···X, BFA9-8 |
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BFA7-0 |
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n+1 |
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Last Byte |
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Buffer to Main Memory Page Program |
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(Data from Buffer Programmed into Flash Page) |
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Starts self-timed erase/program operation |
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CS |
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SI |
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CMD |
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r , PA12-6 |
PA5-0, XX |
X |
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Each transition represents |
n = 1st byte written |
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n+1 = 2nd byte written |
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8 bits and 8 clock cycles |
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11
Read Operations
The following block diagram and waveforms illustrate the various read sequences available.
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FLASH MEMORY ARRAY |
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PAGE (528 BYTES) |
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MAIN MEMORY |
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MAIN MEMORY |
PAGE TO |
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PAGE TO |
BUFFER 1 |
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BUFFER 2 |
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BUFFER 1 (528 BYTES) |
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BUFFER 2 (528 BYTES) |
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BUFFER 1 |
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MAIN MEMORY |
BUFFER 2 |
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READ |
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PAGE READ |
READ |
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I/O INTERFACE
SO
Main Memory Page Read
CS
SI |
CMD |
r , PA12-6 PA5-0, BA9-8 |
BA7-0 |
X |
X |
X |
X |
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SO |
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n |
n+1 |
Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer)
Starts reading page data into buffer
CS
SI CMD r , PA12-6 PA5-0, XX X
SO
Buffer Read
CS
SI |
CMD |
X |
X···X, BFA9-8 BFA7-0 |
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SO |
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n |
n+1 |
Each transition represents |
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n = 1st byte read |
8 bits and 8 clock cycles |
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n+1 = 2nd byte read |
12 AT45DB321