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IGBT

High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode

IKP40N65H5, IKW40N65H5

650V DuoPack IGBT and Diode High speed switching series fifth generation

Data sheet

Industrial Power Control

IKW40N65H5, IKP40N65H5

High speed switching series fifth generation

High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode

Features and Benefits:

High speed H5 technology offering

• Best-in-Class efficiency in hard switching and resonant topologies

• Plug and play replacement of previous generation IGBTs

• 650V breakdown voltage

• Low Qg

• IGBT copacked with RAPID 1 fast and soft antiparallel diode

• Maximum junction temperature 175°C

• Qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Applications:

• Solar converters

• Uninterruptible power supplies

• Welding converters

• Mid to high range switching frequency converters

Package pin definition:

• Pin 1 - gate

• Pin 2 & backside - collector

• Pin 3 - emitter

C

G C E

C

G E

G

C

E

Key Performance and Package Parameters

Type

VCE

IC

VCEsat,Tvj=25°C

Tvjmax

Marking

Package

IKW40N65H5

650V

40A

1.65V

175°C

K40EH5

PG-TO247-3

 

 

 

 

 

 

 

IKP40N65H5

650V

40A

1.65V

175°C

K40EH5

PG-TO220-3

 

 

 

 

 

 

 

2

Rev. 1.2, 2013-12-18

 

IKW40N65H5, IKP40N65H5

 

High speed switching series fifth generation

Table of Contents

 

Description . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package Drawing PG-TO247-pinGCE

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Package Drawing PG-TO220-3 . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Testing Conditions . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Revision History . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

Disclaimer . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

3

Rev. 1.2, 2013-12-18

IKW40N65H5, IKP40N65H5

High speed switching series fifth generation

Maximum Ratings

For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.

 

Parameter

 

 

Symbol

 

Value

Unit

 

Collector-emitter voltage

 

 

VCE

 

650

V

 

DC collector current, limited by Tvjmax

 

 

 

 

 

 

 

 

TC = 25°C

 

 

IC

 

74.0

A

 

TC = 100°C

 

 

 

 

46.0

 

 

 

Pulsed collector current, tp limited by Tvjmax

 

ICpuls

 

120.0

A

 

Turn off safe operating area VCE 650V, Tvj 175°C

-

 

120.0

A

 

Diode forward current, limited by Tvjmax

 

 

 

 

 

 

 

TC = 25°C

 

 

IF

 

36.0

A

 

TC = 100°C

 

 

 

 

21.0

 

 

 

Diode pulsed current, tp limited by Tvjmax

 

IFpuls

 

120.0

A

 

Gate-emitter voltage

 

 

VGE

 

±20

V

 

Transient Gate-emitter voltage (tp 10µs, D < 0.010)

 

±30

 

 

 

 

 

 

Power dissipation TC = 25°C

 

 

Ptot

 

255.0

W

 

Power dissipation TC = 100°C

 

 

 

120.0

 

 

 

 

 

 

 

 

Operating junction temperature

 

 

Tvj

 

-40...+175

°C

 

Storage temperature

 

 

Tstg

 

-55...+150

°C

 

Soldering temperature,

 

 

 

 

 

 

 

 

wave soldering 1.6 mm (0.063 in.) from case for 10s

PG-TO247-pinGCE

 

260

°C

 

 

 

 

PG-TO220-3

 

260

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque, M3 screw

 

 

M

 

0.6

Nm

 

Maximum of mounting processes: 3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Conditions

 

 

Max. Value

 

Unit

 

Characteristic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IGBT thermal resistance,

Rth(j-c)

 

 

 

0.60

 

K/W

 

junction - case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Diode thermal resistance,

Rth(j-c)

 

 

 

1.80

 

K/W

 

junction - case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal resistance

Rth(j-a)

PG-TO247-pinGCE

40

 

K/W

 

junction - ambient

PG-TO220-3

 

 

62

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

Rev. 1.2, 2013-12-18

IKW40N65H5, IKP40N65H5

High speed switching series fifth generation

Electrical Characteristic, atTvj= 25°C, unless otherwise specified

 

Parameter

Symbol

Conditions

 

Value

 

Unit

 

min.

typ.

max.

 

 

 

 

 

 

Static Characteristic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector-emitter breakdown voltage

V(BR)CES

VGE = 0V, IC = 0.20mA

650

-

-

V

 

 

 

VGE = 15.0V, IC = 40.0A

 

 

 

 

 

Collector-emitter saturation voltage

VCEsat

Tvj = 25°C

-

1.65

2.10

V

 

Tvj = 125°C

-

1.85

-

 

 

 

 

 

 

 

Tvj = 175°C

-

1.95

-

 

 

 

 

VGE = 0V, IF = 20.0A

 

 

 

 

 

Diode forward voltage

VF

Tvj = 25°C

-

1.45

1.80

V

 

Tvj = 125°C

-

1.40

-

 

 

 

 

 

 

 

Tvj = 175°C

-

1.40

-

 

 

Gate-emitter threshold voltage

VGE(th)

IC = 0.40mA, VCE = VGE

3.2

4.0

4.8

V

 

 

 

VCE = 650V, VGE = 0V

 

 

 

 

 

Zero gate voltage collector current

ICES

Tvj = 25°C

-

-

40.0

µA

 

 

 

Tvj = 175°C

-

-

4000.0

 

 

Gate-emitter leakage current

IGES

VCE = 0V, VGE = 20V

-

-

100

nA

 

Transconductance

gfs

VCE = 20V, IC = 40.0A

-

50.0

-

S

Electrical Characteristic, atTvj= 25°C, unless otherwise specified

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Conditions

 

Value

 

Unit

 

min.

typ.

max.

 

 

 

 

 

 

Dynamic Characteristic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input capacitance

Cies

 

-

2500

-

 

 

Output capacitance

Coes

VCE = 25V, VGE = 0V, f = 1MHz

-

50

-

pF

 

Reverse transfer capacitance

Cres

 

-

9

-

 

 

Gate charge

QG

VCC = 520V, IC = 40.0A,

-

95.0

-

nC

 

VGE = 15V

 

 

 

 

 

 

 

 

Internal emitter inductance

LE

PG-TO247-pinGCE

 

13.0

 

 

 

measured 5mm (0.197 in.) from

-

-

nH

 

PG-TO220-3

 

 

case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Switching Characteristic, Inductive Load

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Conditions

 

Value

 

Unit

 

min.

typ.

max.

 

 

 

 

 

IGBT Characteristic, atTvj= 25°C

 

 

 

 

 

 

 

Turn-on delay time

td(on)

Tvj = 25°C,

-

22

-

ns

 

Rise time

tr

VCC = 400V, IC = 20.0A,

-

12

-

ns

 

 

 

VGE = 0.0/15.0V,

 

 

 

 

 

Turn-off delay time

td(off)

-

165

-

ns

 

rG = 15.0Ω, Lσ = 30nH,

 

Fall time

tf

Cσ = 30pF

-

13

-

ns

 

 

 

Lσ, Cσ from Fig. E

 

 

 

 

 

Turn-on energy

Eon

-

0.39

-

mJ

 

Energy losses include “tail” and

 

Turn-off energy

Eoff

diode reverse recovery.

-

0.12

-

mJ

 

Total switching energy

Ets

 

-

0.51

-

mJ

5

Rev. 1.2, 2013-12-18

IKW40N65H5, IKP40N65H5

High speed switching series fifth generation

Turn-on delay time

td(on)

Tvj = 25°C,

-

19

-

ns

Rise time

tr

VCC = 400V, IC = 5.0A,

-

4

-

ns

 

 

VGE = 0.0/15.0V,

 

 

 

 

Turn-off delay time

td(off)

-

190

-

ns

rG = 15.0Ω, Lσ = 30nH,

Fall time

tf

Cσ = 30pF

-

24

-

ns

 

 

Lσ, Cσ from Fig. E

 

 

 

 

Turn-on energy

Eon

-

0.09

-

mJ

Energy losses include “tail” and

Turn-off energy

Eoff

diode reverse recovery.

-

0.05

-

mJ

Total switching energy

Ets

 

-

0.14

-

mJ

Diode Characteristic, atTvj= 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

Diode reverse recovery time

trr

Tvj = 25°C,

-

62

-

ns

Diode reverse recovery charge

Qrr

VR = 400V,

-

0.45

-

µC

IF = 20.0A,

 

Irrm

 

 

 

 

Diode peak reverse recovery current

diF/dt = 1000A/µs

-

12.5

-

A

Diode peak rate of fall of reverse

dirr/dt

 

-

-290

-

A/µs

recovery current during tb

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Diode reverse recovery time

trr

Tvj = 25°C,

-

30

-

ns

Diode reverse recovery charge

Qrr

VR = 400V,

-

0.22

-

µC

IF = 5.0A,

 

Irrm

 

 

 

 

Diode peak reverse recovery current

diF/dt = 1000A/µs

-

10.7

-

A

Diode peak rate of fall of reverse

dirr/dt

 

-

-700

-

A/µs

recovery current during tb

 

 

 

 

 

 

 

Switching Characteristic, Inductive Load

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Conditions

 

Value

 

Unit

min.

typ.

max.

 

 

 

 

IGBT Characteristic, atTvj= 150°C

 

 

 

 

 

 

Turn-on delay time

td(on)

Tvj = 150°C,

-

20

-

ns

Rise time

tr

VCC = 400V, IC = 20.0A,

-

12

-

ns

 

 

VGE = 0.0/15.0V,

 

 

 

 

Turn-off delay time

td(off)

-

195

-

ns

rG = 15.0Ω, Lσ = 30nH,

Fall time

tf

Cσ = 30pF

-

22

-

ns

 

 

Lσ, Cσ from Fig. E

 

 

 

 

Turn-on energy

Eon

-

0.54

-

mJ

Energy losses include “tail” and

Turn-off energy

Eoff

diode reverse recovery.

-

0.20

-

mJ

Total switching energy

Ets

 

-

0.74

-

mJ

 

 

 

 

 

 

 

Turn-on delay time

td(on)

Tvj = 150°C,

-

19

-

ns

Rise time

tr

VCC = 400V, IC = 5.0A,

-

5

-

ns

 

 

VGE = 0.0/15.0V,

 

 

 

 

Turn-off delay time

td(off)

-

240

-

ns

rG = 15.0Ω, Lσ = 30nH,

Fall time

tf

Cσ = 30pF

-

33

-

ns

 

 

Lσ, Cσ from Fig. E

 

 

 

 

Turn-on energy

Eon

-

0.15

-

mJ

Energy losses include “tail” and

Turn-off energy

Eoff

diode reverse recovery.

-

0.07

-

mJ

Total switching energy

Ets

 

-

0.22

-

mJ

6

Rev. 1.2, 2013-12-18

IKW40N65H5, IKP40N65H5

High speed switching series fifth generation

Diode Characteristic, atTvj= 150°C

Diode reverse recovery time

trr

Tvj = 150°C,

-

90

-

ns

 

 

VR = 400V,

 

 

 

 

Diode reverse recovery charge

Qrr

-

1.00

-

µC

IF = 20.0A,

 

Irrm

 

 

 

 

Diode peak reverse recovery current

diF/dt = 1000A/µs

-

17.5

-

A

Diode peak rate of fall of reverse

dirr/dt

 

-

-220

-

A/µs

recovery current during tb

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Diode reverse recovery time

trr

Tvj = 150°C,

-

52

-

ns

Diode reverse recovery charge

Qrr

VR = 400V,

-

0.49

-

µC

IF = 5.0A,

 

Irrm

 

 

 

 

Diode peak reverse recovery current

diF/dt = 1000A/µs

-

15.0

-

A

Diode peak rate of fall of reverse

dirr/dt

 

-

-430

-

A/µs

recovery current during tb

 

 

 

 

 

 

 

7

Rev. 1.2, 2013-12-18

IKW40N65H5, IKP40N65H5

High speed switching series fifth generation

 

 

 

 

 

 

 

 

 

275

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

250

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

225

 

 

 

 

 

 

IC[A]CURRENTCOLLECTOR,

 

 

 

 

 

 

 

Ptot[W]DISSIPATIONPOWER,

200

 

 

 

 

 

 

10

 

 

 

 

 

 

175

 

 

 

 

 

 

tp=1µs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

150

 

 

 

 

 

 

 

10µs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50µs

 

 

 

 

 

125

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100µs

 

 

 

 

 

100

 

 

 

 

 

 

1

200µs

 

 

 

 

 

75

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

500µs

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

DC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

1

 

10

 

100

 

1000

 

25

50

75

100

125

150

175

 

 

VCE, COLLECTOR-EMITTER VOLTAGE [V]

 

 

TC, CASE TEMPERATURE [°C]

 

 

Figure 1. Forward bias safe operating area

 

 

Figure 2. Power dissipation as a function of case

 

 

 

(D=0, TC=25°C, Tvj£175°C; VGE=15V.

 

 

 

temperature

 

 

 

 

 

 

Recommended use at VGE³7.5V)

 

 

 

 

(Tvj£175°C)

 

 

 

 

 

 

80

 

 

 

 

 

 

 

120

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C[A]CURRENTCOLLECTOR,

60

 

 

 

 

 

 

C[A]CURRENTCOLLECTOR,

VGE=20V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18V

 

 

 

 

 

50

 

 

 

 

 

 

80

15V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

12V

 

 

 

 

 

40

 

 

 

 

 

 

60

10V

 

 

 

 

 

 

 

 

 

 

 

 

 

8V

 

 

 

 

 

30

 

 

 

 

 

 

40

7V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

6V

 

 

 

 

 

I

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

5V

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

25

50

75

100

125

150

175

 

0

1

2

 

3

4

5

 

 

TC, CASE TEMPERATURE [°C]

 

 

 

VCE, COLLECTOR-EMITTER VOLTAGE [V]

 

 

Figure 3. Collector current as a function of case

 

 

Figure 4. Typical output characteristic

 

 

 

 

temperature

 

 

 

 

 

 

(Tvj=25°C)

 

 

 

 

 

 

 

(VGE³15V, Tvj£175°C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8

 

 

 

 

Rev. 1.2, 2013-12-18

IKW40N65H5, IKP40N65H5

High speed switching series fifth generation

 

120

 

 

 

 

 

 

 

 

120

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tj=25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tj=150°C

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

C[A]CURRENTCOLLECTOR,

 

VGE=20V

 

 

 

 

 

 

C[A]CURRENTCOLLECTOR,

 

 

 

 

 

 

 

 

 

 

18V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

80

15V

 

 

 

 

 

 

80

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

12V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60

10V

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

 

8V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40

7V

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

20

5V

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

0

1

 

2

3

 

4

5

 

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

8.5

 

 

VCE, COLLECTOR-EMITTER VOLTAGE [V]

 

 

 

VGE, GATE-EMITTER VOLTAGE [V]

 

 

Figure 5. Typical output characteristic

 

 

 

Figure 6. Typical transfer characteristic

 

 

 

 

(Tvj=150°C)

 

 

 

 

 

 

 

(VCE=20V)

 

 

 

 

 

 

 

2.50

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

 

IC=10A

 

 

 

 

 

 

 

 

td(off)

 

 

 

 

 

 

 

COLLECTOR,-[V]SATURATIONEMITTER

 

IC=20A

 

 

 

 

 

 

 

 

tf

 

 

 

 

 

 

 

2.25

IC=40A

 

 

 

 

 

 

 

 

td(on)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tr

 

 

 

 

 

 

 

2.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.75

 

 

 

 

 

 

 

t[ns]TIMESSWITCHING,

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.25

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.00

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CEsat

0.75

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.50

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

175

 

0

20

 

40

60

80

 

100

120

 

 

Tvj, JUNCTION TEMPERATURE [°C]

 

 

 

IC, COLLECTOR CURRENT [A]

 

 

Figure 7. Typical collector-emitter saturation voltage as

Figure 8. Typical switching times as a function of

 

 

 

a function of junction temperature

 

 

 

collector current

 

 

 

 

 

 

 

(VGE=15V)

 

 

 

 

 

 

 

(inductive load, Tvj=150°C, VCE=400V,

 

 

 

 

 

 

 

 

 

 

 

 

VGE=15/0V, rG=15Ω, Dynamic test circuit in

 

 

 

 

 

 

 

 

 

 

9

 

Figure E)

 

 

Rev. 1.2, 2013-12-18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IKW40N65H5, IKP40N65H5

High speed switching series fifth generation

 

1000

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

td(off)

 

 

 

 

 

 

 

 

td(off)

 

 

 

 

 

 

 

tf

 

 

 

 

 

 

 

 

tf

 

 

 

 

 

 

 

td(on)

 

 

 

 

 

 

 

 

td(on)

 

 

 

 

 

 

 

tr

 

 

 

 

 

 

 

 

tr

 

 

 

 

 

t[ns]TIMESSWITCHING,

100

 

 

 

 

 

 

 

t[ns]TIMESSWITCHING,

100

 

 

 

 

 

 

10

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

5

15

25

35

45

55

65

75

85

25

50

75

100

125

150

175

 

 

 

rG, GATE RESISTOR [Ω]

 

 

 

Tvj, JUNCTION TEMPERATURE [°C]

 

 

Figure 9. Typical switching times as a function of gate

Figure 10. Typical switching times as a function of

 

 

resistor

 

 

 

 

 

 

 

junction temperature

 

 

 

 

 

(inductive load, Tvj=150°C, VCE=400V,

 

 

(inductive load, VCE=400V, VGE=15/0V,

 

 

 

VGE=15/0V, IC=20A,Dynamic test circuit in

 

 

IC=20A, rG=15Ω,Dynamic test circuit in

 

 

 

Figure E)

 

 

 

 

 

 

 

Figure E)

 

 

 

 

 

 

5.5

 

 

 

 

 

 

 

 

8

 

 

 

 

 

 

 

 

 

 

typ.

 

 

 

 

 

 

Eoff

 

 

 

 

 

GE(th)GATE,-[V]VOLTAGETHRESHOLDEMITTER

5.0

 

 

min.

 

 

 

 

 

 

Eon

 

 

 

 

 

 

 

max.

 

 

 

 

 

7

Ets

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.5

 

 

 

 

 

 

 

E[mJ]LOSSESENERGYSWITCHING,

6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.0

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.5

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.5

 

 

 

 

 

 

 

1

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

0

25

 

50

75

100

 

125

150

0

20

40

60

80

100

120

 

 

Tvj, JUNCTION TEMPERATURE [°C]

 

 

IC, COLLECTOR CURRENT [A]

 

 

Figure 11. Gate-emitter threshold voltage as a function

Figure 12. Typical switching energy losses as a

 

 

 

of junction temperature

 

 

 

 

function of collector current

 

 

 

 

(IC=0.4mA)

 

 

 

 

 

 

(inductive load, Tvj=150°C, VCE=400V,

 

 

 

 

 

 

 

 

 

 

 

 

VGE=15/0V, rG=15Ω,Dynamic test circuit in

 

 

 

 

 

 

 

 

 

 

10

 

Figure E)

 

 

Rev. 1.2, 2013-12-18

 

 

 

 

 

 

 

 

 

 

 

 

 

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