IKP40N65H5
.pdfIGBT
High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode
IKP40N65H5, IKW40N65H5
650V DuoPack IGBT and Diode High speed switching series fifth generation
Data sheet
Industrial Power Control
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode
Features and Benefits:
High speed H5 technology offering
• Best-in-Class efficiency in hard switching and resonant topologies
• Plug and play replacement of previous generation IGBTs
• 650V breakdown voltage
• Low Qg
• IGBT copacked with RAPID 1 fast and soft antiparallel diode
• Maximum junction temperature 175°C
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
Applications:
• Solar converters
• Uninterruptible power supplies
• Welding converters
• Mid to high range switching frequency converters
Package pin definition:
• Pin 1 - gate
• Pin 2 & backside - collector
• Pin 3 - emitter
C
G C E
C
G E
G
C
E
Key Performance and Package Parameters
Type |
VCE |
IC |
VCEsat,Tvj=25°C |
Tvjmax |
Marking |
Package |
IKW40N65H5 |
650V |
40A |
1.65V |
175°C |
K40EH5 |
PG-TO247-3 |
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IKP40N65H5 |
650V |
40A |
1.65V |
175°C |
K40EH5 |
PG-TO220-3 |
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2 |
Rev. 1.2, 2013-12-18 |
|
IKW40N65H5, IKP40N65H5 |
|
High speed switching series fifth generation |
Table of Contents |
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Description . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 |
Table of Contents . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 |
Maximum Ratings . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 |
Thermal Resistance . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 |
Electrical Characteristics . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 |
Electrical Characteristics Diagrams . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 |
Package Drawing PG-TO247-pinGCE |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 |
Package Drawing PG-TO220-3 . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 |
Testing Conditions . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 |
Revision History . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 |
Disclaimer . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 |
3 |
Rev. 1.2, 2013-12-18 |
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
Maximum Ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
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Parameter |
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Symbol |
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Value |
Unit |
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Collector-emitter voltage |
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VCE |
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650 |
V |
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DC collector current, limited by Tvjmax |
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TC = 25°C |
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IC |
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74.0 |
A |
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TC = 100°C |
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46.0 |
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Pulsed collector current, tp limited by Tvjmax |
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ICpuls |
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120.0 |
A |
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Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175°C |
- |
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120.0 |
A |
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Diode forward current, limited by Tvjmax |
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TC = 25°C |
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IF |
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36.0 |
A |
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TC = 100°C |
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21.0 |
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Diode pulsed current, tp limited by Tvjmax |
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IFpuls |
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120.0 |
A |
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Gate-emitter voltage |
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VGE |
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±20 |
V |
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Transient Gate-emitter voltage (tp ≤ 10µs, D < 0.010) |
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±30 |
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Power dissipation TC = 25°C |
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Ptot |
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255.0 |
W |
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Power dissipation TC = 100°C |
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120.0 |
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Operating junction temperature |
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Tvj |
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-40...+175 |
°C |
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Storage temperature |
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Tstg |
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-55...+150 |
°C |
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Soldering temperature, |
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wave soldering 1.6 mm (0.063 in.) from case for 10s |
PG-TO247-pinGCE |
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260 |
°C |
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PG-TO220-3 |
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260 |
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Mounting torque, M3 screw |
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M |
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0.6 |
Nm |
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Maximum of mounting processes: 3 |
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Thermal Resistance |
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Parameter |
Symbol |
Conditions |
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Max. Value |
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Unit |
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Characteristic |
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IGBT thermal resistance, |
Rth(j-c) |
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0.60 |
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K/W |
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junction - case |
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Diode thermal resistance, |
Rth(j-c) |
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1.80 |
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K/W |
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junction - case |
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Thermal resistance |
Rth(j-a) |
PG-TO247-pinGCE |
40 |
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K/W |
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junction - ambient |
PG-TO220-3 |
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62 |
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4 |
Rev. 1.2, 2013-12-18 |
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
Electrical Characteristic, atTvj= 25°C, unless otherwise specified
|
Parameter |
Symbol |
Conditions |
|
Value |
|
Unit |
|
min. |
typ. |
max. |
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Static Characteristic |
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Collector-emitter breakdown voltage |
V(BR)CES |
VGE = 0V, IC = 0.20mA |
650 |
- |
- |
V |
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VGE = 15.0V, IC = 40.0A |
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Collector-emitter saturation voltage |
VCEsat |
Tvj = 25°C |
- |
1.65 |
2.10 |
V |
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Tvj = 125°C |
- |
1.85 |
- |
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Tvj = 175°C |
- |
1.95 |
- |
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VGE = 0V, IF = 20.0A |
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Diode forward voltage |
VF |
Tvj = 25°C |
- |
1.45 |
1.80 |
V |
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Tvj = 125°C |
- |
1.40 |
- |
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Tvj = 175°C |
- |
1.40 |
- |
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Gate-emitter threshold voltage |
VGE(th) |
IC = 0.40mA, VCE = VGE |
3.2 |
4.0 |
4.8 |
V |
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VCE = 650V, VGE = 0V |
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Zero gate voltage collector current |
ICES |
Tvj = 25°C |
- |
- |
40.0 |
µA |
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Tvj = 175°C |
- |
- |
4000.0 |
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Gate-emitter leakage current |
IGES |
VCE = 0V, VGE = 20V |
- |
- |
100 |
nA |
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Transconductance |
gfs |
VCE = 20V, IC = 40.0A |
- |
50.0 |
- |
S |
Electrical Characteristic, atTvj= 25°C, unless otherwise specified |
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Parameter |
Symbol |
Conditions |
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Value |
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Unit |
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min. |
typ. |
max. |
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Dynamic Characteristic |
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Input capacitance |
Cies |
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- |
2500 |
- |
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Output capacitance |
Coes |
VCE = 25V, VGE = 0V, f = 1MHz |
- |
50 |
- |
pF |
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Reverse transfer capacitance |
Cres |
|
- |
9 |
- |
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Gate charge |
QG |
VCC = 520V, IC = 40.0A, |
- |
95.0 |
- |
nC |
|
VGE = 15V |
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Internal emitter inductance |
LE |
PG-TO247-pinGCE |
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13.0 |
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measured 5mm (0.197 in.) from |
- |
- |
nH |
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PG-TO220-3 |
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case |
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Switching Characteristic, Inductive Load |
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Parameter |
Symbol |
Conditions |
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Value |
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Unit |
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min. |
typ. |
max. |
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IGBT Characteristic, atTvj= 25°C |
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Turn-on delay time |
td(on) |
Tvj = 25°C, |
- |
22 |
- |
ns |
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Rise time |
tr |
VCC = 400V, IC = 20.0A, |
- |
12 |
- |
ns |
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VGE = 0.0/15.0V, |
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Turn-off delay time |
td(off) |
- |
165 |
- |
ns |
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rG = 15.0Ω, Lσ = 30nH, |
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Fall time |
tf |
Cσ = 30pF |
- |
13 |
- |
ns |
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Lσ, Cσ from Fig. E |
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Turn-on energy |
Eon |
- |
0.39 |
- |
mJ |
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Energy losses include “tail” and |
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Turn-off energy |
Eoff |
diode reverse recovery. |
- |
0.12 |
- |
mJ |
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Total switching energy |
Ets |
|
- |
0.51 |
- |
mJ |
5 |
Rev. 1.2, 2013-12-18 |
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
Turn-on delay time |
td(on) |
Tvj = 25°C, |
- |
19 |
- |
ns |
|
Rise time |
tr |
VCC = 400V, IC = 5.0A, |
- |
4 |
- |
ns |
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VGE = 0.0/15.0V, |
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Turn-off delay time |
td(off) |
- |
190 |
- |
ns |
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rG = 15.0Ω, Lσ = 30nH, |
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Fall time |
tf |
Cσ = 30pF |
- |
24 |
- |
ns |
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Lσ, Cσ from Fig. E |
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Turn-on energy |
Eon |
- |
0.09 |
- |
mJ |
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Energy losses include “tail” and |
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Turn-off energy |
Eoff |
diode reverse recovery. |
- |
0.05 |
- |
mJ |
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Total switching energy |
Ets |
|
- |
0.14 |
- |
mJ |
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Diode Characteristic, atTvj= 25°C |
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Diode reverse recovery time |
trr |
Tvj = 25°C, |
- |
62 |
- |
ns |
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Diode reverse recovery charge |
Qrr |
VR = 400V, |
- |
0.45 |
- |
µC |
|
IF = 20.0A, |
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Irrm |
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Diode peak reverse recovery current |
diF/dt = 1000A/µs |
- |
12.5 |
- |
A |
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Diode peak rate of fall of reverse |
dirr/dt |
|
- |
-290 |
- |
A/µs |
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recovery current during tb |
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Diode reverse recovery time |
trr |
Tvj = 25°C, |
- |
30 |
- |
ns |
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Diode reverse recovery charge |
Qrr |
VR = 400V, |
- |
0.22 |
- |
µC |
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IF = 5.0A, |
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Irrm |
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Diode peak reverse recovery current |
diF/dt = 1000A/µs |
- |
10.7 |
- |
A |
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Diode peak rate of fall of reverse |
dirr/dt |
|
- |
-700 |
- |
A/µs |
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recovery current during tb |
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Switching Characteristic, Inductive Load |
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Parameter |
Symbol |
Conditions |
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Value |
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Unit |
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min. |
typ. |
max. |
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IGBT Characteristic, atTvj= 150°C |
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Turn-on delay time |
td(on) |
Tvj = 150°C, |
- |
20 |
- |
ns |
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Rise time |
tr |
VCC = 400V, IC = 20.0A, |
- |
12 |
- |
ns |
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VGE = 0.0/15.0V, |
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Turn-off delay time |
td(off) |
- |
195 |
- |
ns |
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rG = 15.0Ω, Lσ = 30nH, |
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Fall time |
tf |
Cσ = 30pF |
- |
22 |
- |
ns |
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Lσ, Cσ from Fig. E |
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Turn-on energy |
Eon |
- |
0.54 |
- |
mJ |
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Energy losses include “tail” and |
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Turn-off energy |
Eoff |
diode reverse recovery. |
- |
0.20 |
- |
mJ |
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Total switching energy |
Ets |
|
- |
0.74 |
- |
mJ |
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Turn-on delay time |
td(on) |
Tvj = 150°C, |
- |
19 |
- |
ns |
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Rise time |
tr |
VCC = 400V, IC = 5.0A, |
- |
5 |
- |
ns |
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VGE = 0.0/15.0V, |
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Turn-off delay time |
td(off) |
- |
240 |
- |
ns |
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rG = 15.0Ω, Lσ = 30nH, |
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Fall time |
tf |
Cσ = 30pF |
- |
33 |
- |
ns |
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Lσ, Cσ from Fig. E |
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Turn-on energy |
Eon |
- |
0.15 |
- |
mJ |
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Energy losses include “tail” and |
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Turn-off energy |
Eoff |
diode reverse recovery. |
- |
0.07 |
- |
mJ |
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Total switching energy |
Ets |
|
- |
0.22 |
- |
mJ |
6 |
Rev. 1.2, 2013-12-18 |
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
Diode Characteristic, atTvj= 150°C
Diode reverse recovery time |
trr |
Tvj = 150°C, |
- |
90 |
- |
ns |
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VR = 400V, |
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Diode reverse recovery charge |
Qrr |
- |
1.00 |
- |
µC |
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IF = 20.0A, |
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Irrm |
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Diode peak reverse recovery current |
diF/dt = 1000A/µs |
- |
17.5 |
- |
A |
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Diode peak rate of fall of reverse |
dirr/dt |
|
- |
-220 |
- |
A/µs |
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recovery current during tb |
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Diode reverse recovery time |
trr |
Tvj = 150°C, |
- |
52 |
- |
ns |
|
Diode reverse recovery charge |
Qrr |
VR = 400V, |
- |
0.49 |
- |
µC |
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IF = 5.0A, |
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Irrm |
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Diode peak reverse recovery current |
diF/dt = 1000A/µs |
- |
15.0 |
- |
A |
||
Diode peak rate of fall of reverse |
dirr/dt |
|
- |
-430 |
- |
A/µs |
|
recovery current during tb |
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7 |
Rev. 1.2, 2013-12-18 |
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
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275 |
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100 |
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250 |
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225 |
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IC[A]CURRENTCOLLECTOR, |
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Ptot[W]DISSIPATIONPOWER, |
200 |
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10 |
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175 |
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tp=1µs |
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150 |
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10µs |
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50µs |
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125 |
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100µs |
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100 |
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1 |
200µs |
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75 |
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500µs |
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50 |
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DC |
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25 |
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0.1 |
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0 |
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1 |
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10 |
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100 |
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1000 |
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25 |
50 |
75 |
100 |
125 |
150 |
175 |
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VCE, COLLECTOR-EMITTER VOLTAGE [V] |
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TC, CASE TEMPERATURE [°C] |
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Figure 1. Forward bias safe operating area |
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Figure 2. Power dissipation as a function of case |
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(D=0, TC=25°C, Tvj£175°C; VGE=15V. |
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temperature |
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Recommended use at VGE³7.5V) |
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(Tvj£175°C) |
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80 |
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120 |
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70 |
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100 |
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C[A]CURRENTCOLLECTOR, |
60 |
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C[A]CURRENTCOLLECTOR, |
VGE=20V |
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18V |
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50 |
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80 |
15V |
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12V |
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40 |
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60 |
10V |
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8V |
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30 |
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40 |
7V |
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20 |
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6V |
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I |
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I |
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20 |
5V |
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10 |
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0 |
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0 |
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25 |
50 |
75 |
100 |
125 |
150 |
175 |
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0 |
1 |
2 |
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3 |
4 |
5 |
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TC, CASE TEMPERATURE [°C] |
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VCE, COLLECTOR-EMITTER VOLTAGE [V] |
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Figure 3. Collector current as a function of case |
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Figure 4. Typical output characteristic |
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temperature |
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(Tvj=25°C) |
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(VGE³15V, Tvj£175°C) |
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8 |
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Rev. 1.2, 2013-12-18 |
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
|
120 |
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120 |
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Tj=25°C |
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Tj=150°C |
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100 |
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100 |
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C[A]CURRENTCOLLECTOR, |
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VGE=20V |
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C[A]CURRENTCOLLECTOR, |
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18V |
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80 |
15V |
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80 |
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12V |
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60 |
10V |
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60 |
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8V |
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40 |
7V |
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40 |
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6V |
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I |
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I |
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20 |
5V |
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20 |
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0 |
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0 |
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0 |
1 |
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2 |
3 |
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4 |
5 |
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4.5 |
5.0 |
5.5 |
6.0 |
6.5 |
7.0 |
7.5 |
8.0 |
8.5 |
|
|
VCE, COLLECTOR-EMITTER VOLTAGE [V] |
|
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VGE, GATE-EMITTER VOLTAGE [V] |
|
|||||||||||
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Figure 5. Typical output characteristic |
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Figure 6. Typical transfer characteristic |
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(Tvj=150°C) |
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(VCE=20V) |
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2.50 |
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1000 |
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IC=10A |
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td(off) |
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COLLECTOR,-[V]SATURATIONEMITTER |
|
IC=20A |
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tf |
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2.25 |
IC=40A |
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td(on) |
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tr |
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2.00 |
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1.75 |
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t[ns]TIMESSWITCHING, |
100 |
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1.50 |
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1.25 |
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10 |
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1.00 |
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CEsat |
0.75 |
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V |
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0.50 |
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1 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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0 |
20 |
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40 |
60 |
80 |
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100 |
120 |
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|
Tvj, JUNCTION TEMPERATURE [°C] |
|
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|
IC, COLLECTOR CURRENT [A] |
|
|||||||||||
|
Figure 7. Typical collector-emitter saturation voltage as |
Figure 8. Typical switching times as a function of |
|
|||||||||||||||
|
|
a function of junction temperature |
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|
collector current |
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(VGE=15V) |
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(inductive load, Tvj=150°C, VCE=400V, |
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VGE=15/0V, rG=15Ω, Dynamic test circuit in |
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9 |
|
Figure E) |
|
|
Rev. 1.2, 2013-12-18 |
||||
|
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|
|
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
|
1000 |
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|
1000 |
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td(off) |
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td(off) |
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tf |
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tf |
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td(on) |
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td(on) |
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tr |
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tr |
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t[ns]TIMESSWITCHING, |
100 |
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t[ns]TIMESSWITCHING, |
100 |
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10 |
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10 |
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1 |
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1 |
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5 |
15 |
25 |
35 |
45 |
55 |
65 |
75 |
85 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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|
rG, GATE RESISTOR [Ω] |
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Tvj, JUNCTION TEMPERATURE [°C] |
|
||||||||
|
Figure 9. Typical switching times as a function of gate |
Figure 10. Typical switching times as a function of |
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resistor |
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junction temperature |
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|||
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(inductive load, Tvj=150°C, VCE=400V, |
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(inductive load, VCE=400V, VGE=15/0V, |
|
||||||||||
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VGE=15/0V, IC=20A,Dynamic test circuit in |
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IC=20A, rG=15Ω,Dynamic test circuit in |
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||||||||||
|
|
Figure E) |
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Figure E) |
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5.5 |
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8 |
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typ. |
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Eoff |
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GE(th)GATE,-[V]VOLTAGETHRESHOLDEMITTER |
5.0 |
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min. |
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Eon |
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max. |
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7 |
Ets |
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4.5 |
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E[mJ]LOSSESENERGYSWITCHING, |
6 |
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4.0 |
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5 |
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3.5 |
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4 |
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3.0 |
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2.5 |
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3 |
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2.0 |
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2 |
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1.5 |
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1 |
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V |
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1.0 |
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0 |
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0 |
25 |
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50 |
75 |
100 |
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125 |
150 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
|
|
Tvj, JUNCTION TEMPERATURE [°C] |
|
|
IC, COLLECTOR CURRENT [A] |
|
||||||||||
|
Figure 11. Gate-emitter threshold voltage as a function |
Figure 12. Typical switching energy losses as a |
|
|||||||||||||
|
|
of junction temperature |
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function of collector current |
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|||||||
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(IC=0.4mA) |
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(inductive load, Tvj=150°C, VCE=400V, |
|
||||||
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VGE=15/0V, rG=15Ω,Dynamic test circuit in |
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||||
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10 |
|
Figure E) |
|
|
Rev. 1.2, 2013-12-18 |
||
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