IKP40N65H5
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IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
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1.6 |
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0.8 |
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Eoff |
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Eoff |
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Eon |
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Eon |
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1.4 |
Ets |
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0.7 |
Ets |
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E[mJ]LOSSESENERGYSWITCHING, |
1.2 |
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E[mJ]LOSSESENERGYSWITCHING, |
0.6 |
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1.0 |
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0.5 |
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0.8 |
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0.4 |
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0.6 |
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0.3 |
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0.4 |
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0.2 |
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0.2 |
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0.1 |
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0.0 |
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0.0 |
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rG, GATE RESISTOR [Ω] |
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Tvj, JUNCTION TEMPERATURE [°C] |
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Figure 13. Typical switching energy losses as a |
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Figure 14. Typical switching energy losses as a |
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function of gate resistor |
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function of junction temperature |
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(inductive load, Tvj=150°C, VCE=400V, |
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(inductive load, VCE=400V, VGE=15/0V, |
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VGE=15/0V, IC=20A, Dynamic test circuit in |
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IC=20A, rG=15Ω,Dynamic test circuit in |
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Figure E) |
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Figure E) |
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1.0 |
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16 |
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Eoff |
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130V |
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0.9 |
Eon |
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520V |
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Ets |
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14 |
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[mJ]LOSSESENERGYSWITCHING, |
0.8 |
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VGEGATE,-[V]VOLTAGEEMITTER |
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12 |
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0.7 |
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0.6 |
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10 |
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0.5 |
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8 |
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0.4 |
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6 |
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0.3 |
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4 |
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0.2 |
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E |
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0.1 |
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2 |
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0.0 |
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0 |
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200 |
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VCE, COLLECTOR-EMITTER VOLTAGE [V] |
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QGE, GATE CHARGE [nC] |
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Figure 15. Typical switching energy losses as a |
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Figure 16. Typical gate charge |
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function of collector emitter voltage |
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(IC=40A) |
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(inductive load, Tvj=150°C, VGE=15/0V, |
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IC=20A, rG=15Ω,Dynamic test circuit in |
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Figure E) |
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11 |
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Rev. 1.2, 2013-12-18 |
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IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
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1E+4 |
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1 |
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Ciss |
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,CAPACITANCE[pF]C |
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Coss |
,TRANSIENTTHERMALRESISTANCE[K/W]c) |
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Crss |
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1000 |
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D=0.5 |
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0.2 |
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0.1 |
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0.1 |
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0.05 |
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0.02 |
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100 |
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0.01 |
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single pulse |
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0.01 |
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10 |
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th(j- |
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Z |
i: |
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4 |
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ri[K/W]: |
0.08245484 |
0.144197 |
0.2151774 |
0.1581708 |
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τi[s]: |
7.3E-5 |
7.0E-4 |
0.01235548 |
0.08020881 |
1 |
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0.001 |
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1E-6 |
1E-5 |
1E-4 |
0.001 |
0.01 |
0.1 |
1 |
VCE, COLLECTOR-EMITTER VOLTAGE [V] |
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tp, PULSE WIDTH [s] |
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Figure 17. Typical capacitance as a function of |
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Figure 18. IGBT transient thermal resistance |
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collector-emitter voltage |
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(D=tp/T) |
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(VGE=0V, f=1MHz) |
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130 |
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1 |
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Tj=25°C, IF = 20A |
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120 |
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Tj=150°C, IF = 20A |
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D=0.5 |
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110 |
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0.2 |
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0.1 |
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100 |
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0.1 |
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0.05 |
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0.02 |
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90 |
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0.01 |
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single pulse |
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80 |
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0.01 |
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70 |
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[K/W]RESISTANCETHERMALTRANSIENT,c) |
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[ns]TIMERECOVERYREVERSE,trr |
60 |
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th(j- |
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50 |
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Z |
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i: |
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ri[K/W]: 0.6701584 0.775759 |
0.3540826 |
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τi[s]: 3.4E-4 |
4.7E-3 |
0.04680901 |
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0.001 |
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40 |
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1E-7 |
1E-6 |
1E-5 |
1E-4 |
0.001 |
0.01 |
0.1 |
1 |
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500 |
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1300 |
1500 |
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tp, PULSE WIDTH [s] |
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diF/dt, DIODE CURRENT SLOPE [A/µs] |
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Figure 19. Diode transient thermal impedance as a |
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Figure 20. Typical reverse recovery time as a function |
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function of pulse width |
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of diode current slope |
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(D=tp/T) |
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(VR=400V) |
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12 |
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Rev. 1.2, 2013-12-18 |
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IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
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1.2 |
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20 |
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Tj=25°C, IF = 20A |
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19 |
Tj=25°C, IF = 20A |
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Tj=150°C, IF = 20A |
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Tj=150°C, IF |
= 20A |
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Qrr[µC]CHARGERECOVERYREVERSE, |
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Irr[A]CURRENTRECOVERYREVERSE, |
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1.0 |
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16 |
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15 |
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0.8 |
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14 |
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12 |
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0.6 |
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0.4 |
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0.2 |
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5 |
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500 |
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diF/dt, DIODE CURRENT SLOPE [A/µs] |
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diF/dt, DIODE CURRENT SLOPE [A/µs] |
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Figure 21. Typical reverse recovery charge as a |
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Figure 22. Typical reverse recovery current as a |
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function of diode current slope |
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function of diode current slope |
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(VR=400V) |
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(VR=400V) |
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0 |
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60 |
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Tj=25°C, IF = 20A |
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Tj=25°C |
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Tj=150°C, IF = 20A |
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Tj=150°C |
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-50 |
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50 |
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rr/dtoffallofratepeakdiode,Irr[A/µs] |
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-100 |
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IF[A]CURRENTFORWARD, |
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-150 |
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40 |
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-200 |
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30 |
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-250 |
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20 |
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-300 |
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dI |
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10 |
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-350 |
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-400 |
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0 |
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500 |
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0.0 |
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1.0 |
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2.0 |
2.5 |
3.0 |
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diF/dt, DIODE CURRENT SLOPE [A/µs] |
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VF, FORWARD VOLTAGE [V] |
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Figure 23. Typical diode peak rate of fall of reverse |
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Figure 24. Typical diode forward current as a function |
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recovery current as a function of diode |
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of forward voltage |
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current slope |
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(VR=400V) |
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13 |
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Rev. 1.2, 2013-12-18 |
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IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
2.0 |
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IF=10A |
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IF=20A |
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IF=40A |
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1.8 |
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1.6 |
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1.4 |
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1.2 |
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[V]VOLTAGEFORWARD,VF |
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1.0 |
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0.8 |
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25 |
50 |
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125 |
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175 |
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Tvj, JUNCTION TEMPERATURE [°C] |
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Figure 25. Typical diode forward voltage as a function |
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of junction temperature |
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14 |
Rev. 1.2, 2013-12-18 |
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
PG-TO247-3
15 |
Rev. 1.2, 2013-12-18 |
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
PG-TO220-3
16 |
Rev. 1.2, 2013-12-18 |
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
vGE(t)
90% VGE
iC(t)
90% IC
10% IC
vCE(t)
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vGE(t)
90% VGE
iC(t)
2% IC
vCE(t)
t2
Eoff =t1∫VCE x IC x dt
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10% VGE |
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90% IC |
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10% IC |
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10% VGE |
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CC 
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t4 |
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Eon = |
VCE x IC x dt |
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t3∫ |
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2% VCE |
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t3 |
t4 |
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Rev. 1.2, 2013-12-18 |
IKW40N65H5, IKP40N65H5
High speed switching series fifth generation
Revision History
IKW40N65H5, IKP40N65H5
Revision: 2013-12-18, Rev. 1.2
Previous Revision
Revision |
Date |
Subjects (major changes since last revision) |
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1.1 |
2012-11-09 |
Preliminary data sheet |
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1.2 |
2013-12-18 |
New Marking Pattern |
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Rev. 1.2, 2013-12-18 |