AT45DB642D

14.2Operation Mode Summary

The commands described previously can be grouped into four different categories to better describe which commands can be executed at what times.

Group A commands consist of:

1.Main Memory Page Read

2.Continuous Array Read

3.Read Sector Protection Register

4.Read Sector Lockdown Register

5.Read Security Register

Group B commands consist of:

1.Page Erase

2.Block Erase

3.Sector Erase

4.Chip Erase

5.Main Memory Page to Buffer 1 (or 2) Transfer

6.Main Memory Page to Buffer 1 (or 2) Compare

7.Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase

8.Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase

9.Main Memory Page Program through Buffer 1 (or 2)

10.Auto Page Rewrite

Group C commands consist of:

1.Buffer 1 (or 2) Read

2.Buffer 1 (or 2) Write

3.Status Register Read

4.Manufacturer and Device ID Read

Group D commands consist of:

1.Erase Sector Protection Register

2.Program Sector Protection Register

3.Sector Lockdown

4.Program Security Register

If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should not be started. However, during the internally self-timed portion of Group B commands, any command in Group C can be executed. The Group B commands using buffer 1 should use Group C commands using buffer 2 and vice versa. Finally, during the internally selftimed portion of a Group D command, only the Status Register Read command should be executed.

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3542M–DFLASH–11/2012