
- •Contents
- •Preface
- •1.1 Elementary thermodynamic ideas of surfaces
- •1.1.1 Thermodynamic potentials and the dividing surface
- •1.1.2 Surface tension and surface energy
- •1.1.3 Surface energy and surface stress
- •1.2 Surface energies and the Wulff theorem
- •1.2.1 General considerations
- •1.2.3 Wulff construction and the forms of small crystals
- •1.3 Thermodynamics versus kinetics
- •1.3.1 Thermodynamics of the vapor pressure
- •1.3.2 The kinetics of crystal growth
- •1.4 Introduction to surface and adsorbate reconstructions
- •1.4.1 Overview
- •1.4.2 General comments and notation
- •1.4.7 Polar semiconductors, such as GaAs(111)
- •1.5 Introduction to surface electronics
- •1.5.3 Surface states and related ideas
- •1.5.4 Surface Brillouin zone
- •1.5.5 Band bending, due to surface states
- •1.5.6 The image force
- •1.5.7 Screening
- •Further reading for chapter 1
- •Problems for chapter 1
- •2.1 Kinetic theory concepts
- •2.1.1 Arrival rate of atoms at a surface
- •2.1.2 The molecular density, n
- •2.2 Vacuum concepts
- •2.2.1 System volumes, leak rates and pumping speeds
- •2.2.2 The idea of conductance
- •2.2.3 Measurement of system pressure
- •2.3 UHV hardware: pumps, tubes, materials and pressure measurement
- •2.3.1 Introduction: sources of information
- •2.3.2 Types of pump
- •2.3.4 Choice of materials
- •2.3.5 Pressure measurement and gas composition
- •2.4.1 Cleaning and sample preparation
- •2.4.3 Sample transfer devices
- •2.4.4 From laboratory experiments to production processes
- •2.5.1 Historical descriptions and recent compilations
- •2.5.2 Thermal evaporation and the uniformity of deposits
- •2.5.3 Molecular beam epitaxy and related methods
- •2.5.4 Sputtering and ion beam assisted deposition
- •2.5.5 Chemical vapor deposition techniques
- •Further reading for chapter 2
- •Problems for chapter 2
- •3.1.1 Surface techniques as scattering experiments
- •3.1.2 Reasons for surface sensitivity
- •3.1.3 Microscopic examination of surfaces
- •3.1.4 Acronyms
- •3.2.1 LEED
- •3.2.2 RHEED and THEED
- •3.3 Inelastic scattering techniques: chemical and electronic state information
- •3.3.1 Electron spectroscopic techniques
- •3.3.2 Photoelectron spectroscopies: XPS and UPS
- •3.3.3 Auger electron spectroscopy: energies and atomic physics
- •3.3.4 AES, XPS and UPS in solids and at surfaces
- •3.4.2 Ratio techniques
- •3.5.1 Scanning electron and Auger microscopy
- •3.5.3 Towards the highest spatial resolution: (a) SEM/STEM
- •Further reading for chapter 3
- •Problems, talks and projects for chapter 3
- •4.2 Statistical physics of adsorption at low coverage
- •4.2.1 General points
- •4.2.2 Localized adsorption: the Langmuir adsorption isotherm
- •4.2.4 Interactions and vibrations in higher density adsorbates
- •4.3 Phase diagrams and phase transitions
- •4.3.1 Adsorption in equilibrium with the gas phase
- •4.3.2 Adsorption out of equilibrium with the gas phase
- •4.4 Physisorption: interatomic forces and lattice dynamical models
- •4.4.1 Thermodynamic information from single surface techniques
- •4.4.2 The crystallography of monolayer solids
- •4.4.3 Melting in two dimensions
- •4.4.4 Construction and understanding of phase diagrams
- •4.5 Chemisorption: quantum mechanical models and chemical practice
- •4.5.1 Phases and phase transitions of the lattice gas
- •4.5.4 Chemisorption and catalysis: macroeconomics, macromolecules and microscopy
- •Further reading for chapter 4
- •Problems and projects for chapter 4
- •5.1 Introduction: growth modes and nucleation barriers
- •5.1.1 Why are we studying epitaxial growth?
- •5.1.3 Growth modes and adsorption isotherms
- •5.1.4 Nucleation barriers in classical and atomistic models
- •5.2 Atomistic models and rate equations
- •5.2.1 Rate equations, controlling energies, and simulations
- •5.2.2 Elements of rate equation models
- •5.2.3 Regimes of condensation
- •5.2.4 General equations for the maximum cluster density
- •5.2.5 Comments on individual treatments
- •5.3 Metal nucleation and growth on insulating substrates
- •5.3.1 Microscopy of island growth: metals on alkali halides
- •5.3.2 Metals on insulators: checks and complications
- •5.4 Metal deposition studied by UHV microscopies
- •5.4.2 FIM studies of surface diffusion on metals
- •5.4.3 Energies from STM and other techniques
- •5.5 Steps, ripening and interdiffusion
- •5.5.2 Steps as sources: diffusion and Ostwald ripening
- •5.5.3 Interdiffusion in magnetic multilayers
- •Further reading for chapter 5
- •Problems and projects for chapter 5
- •6.1 The electron gas: work function, surface structure and energy
- •6.1.1 Free electron models and density functionals
- •6.1.2 Beyond free electrons: work function, surface structure and energy
- •6.1.3 Values of the work function
- •6.1.4 Values of the surface energy
- •6.2 Electron emission processes
- •6.2.1 Thermionic emission
- •6.2.4 Secondary electron emission
- •6.3.1 Symmetry, symmetry breaking and phase transitions
- •6.3.3 Magnetic surface techniques
- •6.3.4 Theories and applications of surface magnetism
- •Further reading for chapter 6
- •Problems and projects for chapter 6
- •7.1.1 Bonding in diamond, graphite, Si, Ge, GaAs, etc.
- •7.1.2 Simple concepts versus detailed computations
- •7.2 Case studies of reconstructed semiconductor surfaces
- •7.2.2 GaAs(111), a polar surface
- •7.2.3 Si and Ge(111): why are they so different?
- •7.2.4 Si, Ge and GaAs(001), steps and growth
- •7.3.1 Thermodynamic and elasticity studies of surfaces
- •7.3.2 Growth on Si(001)
- •7.3.3 Strained layer epitaxy: Ge/Si(001) and Si/Ge(001)
- •7.3.4 Growth of compound semiconductors
- •Further reading for chapter 7
- •Problems and projects for chapter 7
- •8.1 Metals and oxides in contact with semiconductors
- •8.1.1 Band bending and rectifying contacts at semiconductor surfaces
- •8.1.2 Simple models of the depletion region
- •8.1.3 Techniques for analyzing semiconductor interfaces
- •8.2 Semiconductor heterojunctions and devices
- •8.2.1 Origins of Schottky barrier heights
- •8.2.2 Semiconductor heterostructures and band offsets
- •8.3.1 Conductivity, resistivity and the relaxation time
- •8.3.2 Scattering at surfaces and interfaces in nanostructures
- •8.3.3 Spin dependent scattering and magnetic multilayer devices
- •8.4 Chemical routes to manufacturing
- •8.4.4 Combinatorial materials development and analysis
- •Further reading for chapter 8
- •9.1 Electromigration and other degradation effects in nanostructures
- •9.2 What do the various disciplines bring to the table?
- •9.3 What has been left out: future sources of information
- •References
- •Index

6Electronic structure and emission processes at metallic surfaces
This chapter gives, in section 6.1, some generally accessible models of metallic behavior, and tabulates the values of work function and surface energies of selected metals. In section 6.2 we discuss electron emission properties of metals, concentrating on the role of low work function, high surface energy materials as electron sources; we also show that electron emission and secondary electron microscopy can be used to study diVusion of adsorbates. An introduction to magnetism in the context of surfaces and thin ®lms is given in section 6.3.
6.1The electron gas: work function, surface structure and energy
6.1.1Free electron models and density functionals
Free electron models of metals have a long history, going back to the Drude model of conductivity which dates from 1900 (Ashcroft & Mermin 1976). The partly true, partly false predictions of this classical model were important precursors to quantum mechanical models based on the Fermi±Dirac energy distribution. If words in the following description don't make sense, now is the time to take a second look at section 1.5. Modern calculations start from a description of the electron density, r2(r) (r2(z) in 1D) in the presence of a uniform density r1(r or z) of metal ions. This is the jellium model, where the positive charge is smeared out uniformly. At a later stage we can add the eVects of the ion cores Dr1(r) by pseudopotentials or other approximations. This division into a uniform r1, with a step function to zero at the surface, allows us to consider the electron density r2 as the response to this discontinuity. Clearly, a long way inside jellium, r2 5r1, and there is overall charge neutrality. But at the surface there is a charge imbalance, and the electrostatic potential V varies as a function of z.
To see this response, we draw an energy diagram as in ®gure 6.1, with V(2`)
,V(1`), with the Fermi energy EF5mÅ, the chemical potential for the electrons, and note that
EF 2 V(2`)5mÅ, |
(6.1) |
the Fermi level with respect to the bottom of the conduction band, and that the work function, f5V(1`)2 V(2`)2 mÅ, or equivalently
184

6.1 The electron gas |
185 |
|
|
|
3 |
|
|
|
V(z) |
|
|
|
V |
|
|
|
|
|
|
|
|
|
|
|
2 |
|
|
|
|
|
|
|
|
|
|
- |
|
|
|
V |
eff |
(z) |
φ |
|
1 |
µ |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
(eV) |
0 |
|
|
|
|
Fermi level, EF |
|||
|
|
|
|
|
|||||
Energy |
|
|
|
|
|
||||
±1 |
|
|
|
|
|
|
|
|
|
|
2/2 |
±µ |
|
|
|
|
|
|
|
|
k |
|
|
|
|
|
|
||
|
|
F |
xc |
|
|
|
|
|
|
|
±2 |
|
|
|
|
|
|
|
|
|
±3 |
|
|
|
|
|
|
|
|
|
±4 |
|
|
|
|
|
|
|
|
|
±1.5 |
|
±1.0 |
±0.5 |
0.0 |
0.5 |
1.0 |
Distance z (Fermi wavelengths)
Figure 6.1. Energy diagram de®ning the terms f, DV, mÅ and the eVective potential VeV (z) in relation to the Fermi level and the bottom of the conduction band of a metal. This diagram is drawn to scale from the data in table 1 of Lang & Kohn (1970) for rs54. See text for discussion.
f1mÅ5V(1`)2 V(2`); DV. |
(6.2) |
From this simple manipulation we can understand the following points: (1) mÅ is a bulk property, determined by the kinetic energy and exchange-correlation energy of the electron gas; (2) the fact that the work function f depends on the surface face {hkl} means that DV has to be a surface property also. This has various consequences, which are spelled out in the next sections; but ®rst, we need a bit of background theory. The details can be quite complicated, especially considering that there are (at least) two length scales in the problem, one connected with the electron gas, and another connected with the lattice of ions.
It is a good idea to understand the elements of density functional theory (DFT), even if only in outline, in the form that Lang and Kohn used in the early 1970s to derive values for the work function and surface energies of monovalent metals (Lang & Kohn 1970, 1971; Lang 1973). In order not to lose the thrust of the argument, this material is relegated to Appendix J. These calculations characterize free electron metals in general in terms of the radius (rs) which contains one electron; in particular, their calculations spanned the range 2,rs,6 (in units of the Bohr radius a0) which includes the alkali metals Li to Cs. Figure 6.1 is drawn to scale for rs54, which is close to the value needed to describe sodium.

186 6 Electronic structure and emission processes
Table 6.1. The work function of jellium and its components. Columns 2 and 3 represent the kinetic, and exchange-correlation energy respectively (after Lang & Kohn, 1971)
r |
k 2/2 |
m |
xc |
mÅ |
DV |
f |
s |
F |
|
(eV) |
(eV) |
(eV) |
|
|
(eV) |
(eV) |
||||
|
|
|
|
|
|
|
2 |
12.52 |
29.61 |
2.91 |
6.80 |
3.89 |
|
3 |
5.57 |
26.75 |
21.18 |
2.32 |
3.50 |
|
4 |
3.13 |
25.28 |
22.15 |
0.91 |
3.06 |
|
5 |
2.00 |
24.38 |
22.38 |
0.35 |
2.73 |
|
6 |
1.39 |
23.76 |
22.37 |
0.04 |
2.41 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
The main aspect of this model is the replacement of the (insoluble) many electron N-body problem by N one-electron problems with an eVective potential, VeV in ®gure 6.1, which is a functional of the electron density. This potential contains the original electron±nuclei and electron±electron terms, and also has a term to describe exchange and correlation between electrons. These terms have been worked out precisely for a uniform electron gas, corresponding to the interior of jellium, so that explicit, numerical values can be given to these energies as a function of electron density. The trick now is to apply these same numerical recipes to non-uniform densities, whence the term local density approximation (LDA). There are many further methods which try to correct LDA for non-local eVects and density gradients, such as the generalized gradient approximation (GGA), but it is not clear that they always produce a better result. In any case, we are now getting into the realm of arguments between specialists.
Some results of Lang & Kohn's work on jellium are indicated on ®gures 6.1 to 6.3. The electron density (®gure 6.2(a)), electrostatic potential and eVective potential (®gure 6.1) have oscillations normal to the surface in the self-consistent solution obtained; there are substantial cancellations between the various terms. The work function of these model alkali metals (®gure 6.3) varies weakly from Li (rs about 3.3) to Cs (rs about 5.6), whereas the individual components of the work function vary quite a lot. This model was the ®rst to get the order of magnitude, and the trends with rs correct: a big achievement. Note that the position of the ions do not enter this model at all: everything is due to the electron gas, and the importance of the exchange-correlation term mxc, and the variation of the electrostatic contribution, are evident in table 6.1.
In the quarter century since Lang & Kohn's initial work, there have been major developments within the jellium model. As computers have improved, this method has also been applied to clusters, especially of alkali metals, of increasing size. Figure 6.2(b) shows the comparison of the electron density in a spherical sodium atom cluster of more than 2500 atoms, modeled as jellium, compared with the free planar jellium surface on the same scale (Brack 1993). The only diVerence of note between the two curves is that the oscillations in the cluster produce a standing wave pattern at the center of the cluster, whereas they die away from the planar surface. This central peak

(a) |
1.2 |
|
|
|
|
|
|
|
|
ρ ± |
for r |
s |
= 5 |
|
|
|
|
|
|
|
|
1.0 |
|
|
|
|
|
|
|
|
|
Positive |
||
|
|
|
|
background, |
||
tobulk) |
0.8 |
|
|
ρ + |
|
|
|
|
|
|
|
|
|
density(relative |
0.6 |
|
|
|
|
|
|
|
|
|
|
|
|
Charge |
0.4 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ρ± for |
||
|
0.2 |
|
|
rs |
= 2 |
|
|
|
|
|
|||
|
0.0 |
|
|
|
|
|
|
±1.0 |
±0.5 |
0.0 |
|
0.5 |
Distance z (Fermi wavelengths)
Figure 6.2. Electron density at a metal surface in the jellium model: (a) Lang & Kohn (1970) for rs52 and 5; (b) comparison between a spherical cluster of 2654 simulated Na atoms
(rs53.96) and a planar surface for rs54 (after Genzken & Brack 1991, and Brack 1993, reproduced with permission).

188 6 Electronic structure and emission processes
|
4.5 |
|
Hg |
|
|
|
|
|
Zn |
|
|
|
|
|
|
|
Al |
|
|
|
|
|
|
|
Pb |
Cd |
|
|
|
|
|
|
Ga |
In |
|
|
|
|
|
|
4.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
(eV) |
3.5 |
Mg |
|
|
|
|
|
f |
|
|
|
|
|||
|
|
|
|
|
|
|
|
function, |
3.0 |
|
Li |
|
|
|
|
Work |
|
|
Ca |
|
Na |
|
|
|
|
|
|
|
|
||
|
2.5 |
|
|
Ba |
|
|
|
|
|
|
Sr |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
K |
|
|
|
2.0 |
|
|
|
|
Rb |
Cs |
|
|
|
|
|
|
||
|
2 |
|
3 |
4 |
5 |
|
6 |
radius, rs (a.u.)
Figure 6.3. Work functions in the jellium model (full squares, Lang & Kohn 1971), compared with experimental data for polycrystalline alkali and alkaline earth metals (open circles: Michaelson 1977). The elements plotted are after Lang (1973) and the solid line fourth-order polynomial ®t to these points has been added.
(or dip) varies with electron energy and is dominated by the highest occupied states which vary with the exact cluster size, whereas the oscillations close to the surface are independent of such details.
The oscillations in the electron density are called Friedel oscillations; these occur when a more or less localized change in the positive charge density (the discontinuity at the jellium model surface being an extreme case) is coupled with a sharp Fermi surface. In other words, they are a feature of defects in metals in general, not just surfaces, and are an expression of Lindhard screening, which is screening in the high electron density limit. Screening in metals is so eVective that there are ripples in the response, corresponding to overscreening.
Recently, these electron density oscillations have been seen dramatically in STM images both of surface steps, and of individual adsorbed atoms on surfaces, reported in several papers from Eigler's IBM group. By assembling adatoms at low temperature into particular shapes, these `quantum corrals' can produce stationary waves of electron density on the surface which are sampled by the STM tip, and the corresponding Friedel oscillations are energy dependent; two examples from a circular assembly of 60 Fe atoms on Cu(001) are shown in ®gure 6.4.
Whether or not these eVects can be explained in detail as yet (Fe and Cu are both

6.1 The electron gas |
189 |
||
|
|
|
|
|
|
|
|
(a) |
(b) |
Figure 6.4. A `quantum corral' of 60 Fe atoms assembled and viewed on Cu(001) by STM at 4K. The tip imaging parameters are (a) Vt 5110 mV and (b) 2 10 mV, with current I51 nA (after Crommie et al. 1995, reproduced with permission).
k x |
|
(2kF )±1 |
|
|
|
kF |
|
|
k |
k z |
z |
(a) |
dk |
(b) |
|
|
Figure 6.5. (a) Cross section of the free electron Fermi surface, radius kF; (b) the combination of traveling wave states 6k near a surface. See text for discussion.
transition metals with important d-bands), these oscillations are present in free electron theory. To see how such eVects arise, one needs to do as simple a calculation as possible, and try to understand how the physics interacts with the mathematics. The calculation done by Lang & Kohn goes roughly as follows, using ®gure 6.5 as a guide.
Consider pairs of states, ordered by their k-vector perpendicular to the surface, k and 2 k. Their wavefunction is c ,ck(z) exp i(kxx1ky y), and when 6k are combined to vanish in the vacuum (outside the surface), ck(z),sin(kz -gF), where gF is a phase factor, dependent on kF, since the origin doesn't have to be exactly at z50. Draw a Fermi sphere, radius kF, with the k-axis (perpendicular to the surface) as a unique axis, as in ®gure 6.5. Make a slice at k, dk thick; the density of states g(k) is just the area of this slice which is p(kF2 2 k2). Now we can write
r2 5n(z)5p22eg(k)|ck|2dk, |
(6.3) |
where the limits of integration are 0 and kF, and with a bit of manipulation you should get the result
n(z)5nÅ [113cos{2(k z2 g )}/(2k |
F |
z)2 |
1O(2k |
F |
z)23], |
(6.4) |
|
F |
F |
|
|
|
|