
- •Contents
- •Preface
- •1.1 Elementary thermodynamic ideas of surfaces
- •1.1.1 Thermodynamic potentials and the dividing surface
- •1.1.2 Surface tension and surface energy
- •1.1.3 Surface energy and surface stress
- •1.2 Surface energies and the Wulff theorem
- •1.2.1 General considerations
- •1.2.3 Wulff construction and the forms of small crystals
- •1.3 Thermodynamics versus kinetics
- •1.3.1 Thermodynamics of the vapor pressure
- •1.3.2 The kinetics of crystal growth
- •1.4 Introduction to surface and adsorbate reconstructions
- •1.4.1 Overview
- •1.4.2 General comments and notation
- •1.4.7 Polar semiconductors, such as GaAs(111)
- •1.5 Introduction to surface electronics
- •1.5.3 Surface states and related ideas
- •1.5.4 Surface Brillouin zone
- •1.5.5 Band bending, due to surface states
- •1.5.6 The image force
- •1.5.7 Screening
- •Further reading for chapter 1
- •Problems for chapter 1
- •2.1 Kinetic theory concepts
- •2.1.1 Arrival rate of atoms at a surface
- •2.1.2 The molecular density, n
- •2.2 Vacuum concepts
- •2.2.1 System volumes, leak rates and pumping speeds
- •2.2.2 The idea of conductance
- •2.2.3 Measurement of system pressure
- •2.3 UHV hardware: pumps, tubes, materials and pressure measurement
- •2.3.1 Introduction: sources of information
- •2.3.2 Types of pump
- •2.3.4 Choice of materials
- •2.3.5 Pressure measurement and gas composition
- •2.4.1 Cleaning and sample preparation
- •2.4.3 Sample transfer devices
- •2.4.4 From laboratory experiments to production processes
- •2.5.1 Historical descriptions and recent compilations
- •2.5.2 Thermal evaporation and the uniformity of deposits
- •2.5.3 Molecular beam epitaxy and related methods
- •2.5.4 Sputtering and ion beam assisted deposition
- •2.5.5 Chemical vapor deposition techniques
- •Further reading for chapter 2
- •Problems for chapter 2
- •3.1.1 Surface techniques as scattering experiments
- •3.1.2 Reasons for surface sensitivity
- •3.1.3 Microscopic examination of surfaces
- •3.1.4 Acronyms
- •3.2.1 LEED
- •3.2.2 RHEED and THEED
- •3.3 Inelastic scattering techniques: chemical and electronic state information
- •3.3.1 Electron spectroscopic techniques
- •3.3.2 Photoelectron spectroscopies: XPS and UPS
- •3.3.3 Auger electron spectroscopy: energies and atomic physics
- •3.3.4 AES, XPS and UPS in solids and at surfaces
- •3.4.2 Ratio techniques
- •3.5.1 Scanning electron and Auger microscopy
- •3.5.3 Towards the highest spatial resolution: (a) SEM/STEM
- •Further reading for chapter 3
- •Problems, talks and projects for chapter 3
- •4.2 Statistical physics of adsorption at low coverage
- •4.2.1 General points
- •4.2.2 Localized adsorption: the Langmuir adsorption isotherm
- •4.2.4 Interactions and vibrations in higher density adsorbates
- •4.3 Phase diagrams and phase transitions
- •4.3.1 Adsorption in equilibrium with the gas phase
- •4.3.2 Adsorption out of equilibrium with the gas phase
- •4.4 Physisorption: interatomic forces and lattice dynamical models
- •4.4.1 Thermodynamic information from single surface techniques
- •4.4.2 The crystallography of monolayer solids
- •4.4.3 Melting in two dimensions
- •4.4.4 Construction and understanding of phase diagrams
- •4.5 Chemisorption: quantum mechanical models and chemical practice
- •4.5.1 Phases and phase transitions of the lattice gas
- •4.5.4 Chemisorption and catalysis: macroeconomics, macromolecules and microscopy
- •Further reading for chapter 4
- •Problems and projects for chapter 4
- •5.1 Introduction: growth modes and nucleation barriers
- •5.1.1 Why are we studying epitaxial growth?
- •5.1.3 Growth modes and adsorption isotherms
- •5.1.4 Nucleation barriers in classical and atomistic models
- •5.2 Atomistic models and rate equations
- •5.2.1 Rate equations, controlling energies, and simulations
- •5.2.2 Elements of rate equation models
- •5.2.3 Regimes of condensation
- •5.2.4 General equations for the maximum cluster density
- •5.2.5 Comments on individual treatments
- •5.3 Metal nucleation and growth on insulating substrates
- •5.3.1 Microscopy of island growth: metals on alkali halides
- •5.3.2 Metals on insulators: checks and complications
- •5.4 Metal deposition studied by UHV microscopies
- •5.4.2 FIM studies of surface diffusion on metals
- •5.4.3 Energies from STM and other techniques
- •5.5 Steps, ripening and interdiffusion
- •5.5.2 Steps as sources: diffusion and Ostwald ripening
- •5.5.3 Interdiffusion in magnetic multilayers
- •Further reading for chapter 5
- •Problems and projects for chapter 5
- •6.1 The electron gas: work function, surface structure and energy
- •6.1.1 Free electron models and density functionals
- •6.1.2 Beyond free electrons: work function, surface structure and energy
- •6.1.3 Values of the work function
- •6.1.4 Values of the surface energy
- •6.2 Electron emission processes
- •6.2.1 Thermionic emission
- •6.2.4 Secondary electron emission
- •6.3.1 Symmetry, symmetry breaking and phase transitions
- •6.3.3 Magnetic surface techniques
- •6.3.4 Theories and applications of surface magnetism
- •Further reading for chapter 6
- •Problems and projects for chapter 6
- •7.1.1 Bonding in diamond, graphite, Si, Ge, GaAs, etc.
- •7.1.2 Simple concepts versus detailed computations
- •7.2 Case studies of reconstructed semiconductor surfaces
- •7.2.2 GaAs(111), a polar surface
- •7.2.3 Si and Ge(111): why are they so different?
- •7.2.4 Si, Ge and GaAs(001), steps and growth
- •7.3.1 Thermodynamic and elasticity studies of surfaces
- •7.3.2 Growth on Si(001)
- •7.3.3 Strained layer epitaxy: Ge/Si(001) and Si/Ge(001)
- •7.3.4 Growth of compound semiconductors
- •Further reading for chapter 7
- •Problems and projects for chapter 7
- •8.1 Metals and oxides in contact with semiconductors
- •8.1.1 Band bending and rectifying contacts at semiconductor surfaces
- •8.1.2 Simple models of the depletion region
- •8.1.3 Techniques for analyzing semiconductor interfaces
- •8.2 Semiconductor heterojunctions and devices
- •8.2.1 Origins of Schottky barrier heights
- •8.2.2 Semiconductor heterostructures and band offsets
- •8.3.1 Conductivity, resistivity and the relaxation time
- •8.3.2 Scattering at surfaces and interfaces in nanostructures
- •8.3.3 Spin dependent scattering and magnetic multilayer devices
- •8.4 Chemical routes to manufacturing
- •8.4.4 Combinatorial materials development and analysis
- •Further reading for chapter 8
- •9.1 Electromigration and other degradation effects in nanostructures
- •9.2 What do the various disciplines bring to the table?
- •9.3 What has been left out: future sources of information
- •References
- •Index

76 3 Electron-based techniques
N(E).
EIntensity
|
Energy loss |
|
electrons |
|
Auger |
|
electrons |
Secondary |
Backscattered |
electrons |
electrons |
Electron energy E |
E0 |
Figure 3.7. Electron energy spectrum, showing secondary, Auger, energy loss and backscattered electrons.
scattering processes. In the next two sections we are concerned with the understanding and use of the inelastic processes in their own right.
3.3Inelastic scattering techniques: chemical and electronic state information
3.3.1Electron spectroscopic techniques
If we bombard a sample with electrons or photons, electrons will be emitted which have an energy spectrum, shown schematically in ®gure 3.7 for the case of electron bombardment. The most well-known historical example is the photoelectric eVect, and the modern version in UHV is called photoemission (Cardona & Ley 1978, Bonzel & Kleint 1995). Electron emission is commonly used; for example, secondary electrons are the signal normally used to form an image in the scanning electron microscope (SEM), and AES uses Auger electrons to determine surface chemical composition. Ion emission is also known, but is less widely used.
The problem of measuring the energy spectrum is non-trivial, and is discussed in many books (Bauer 1975, Ibach 1977, Walls 1990, Briggs & Seah 1990, Rivière 1990, Smith 1994); introductions are given by Prutton (1994, chapter 2) and WoodruV & Delchar (1986/1994, section 3.1). The ®eld also supports specialist publications such as the Journal of Electron Spectroscopy, and Surface and Interface Analysis. There are various possible geometries for the analyzers and the measurements can be performed in an angle-integrated or angle-resolved (AR) mode. Thus we have a profusion of acronyms, e.g. UPS, ultra-violet photoelectron spectroscopy; ARUPS, the angular resolved version of the same technique, which is used to study band structure and surface states; XPS, X-ray photoelectron spectroscopy, also known as ESCA, electron spectroscopy for chemical analysis, so named by Siegbahn et al. (1967). The massive body of work by this Swedish group resulted in the Nobel Prize being awarded to Kai Siegbahn in

3.3 Inelastic scattering techniques |
77 |
|
|
Figure 3.8. N(E) (bottom) and dN(E)/dE (top) spectra as a function of glancing incidence angle for a bulk sample of Cd (Janssen et al. 1977, reproduced with permission).
1981. Finally there is electron energy loss spectroscopy, which comes in two varieties (EELS and (high resolution) HREELS), the latter being used primarily for studies of surface and adsorbate vibrational structure (Ibach and Mills 1982, Ibach 1994, Lüth 1993/5).
The various analyzers also have acronyms. The magnetic sector spectrometer may be familiar from analysis using EELS in conjunction with TEM or STEM. It has very good energy resolving power, but collects electrons only over a small angular range; this is well suited to the strongly forward peaked scattering which occurs at TEM energies (.100 keV), as illustrated schematically here in ®gure 3.1(d). The retarding ®eld analyzer (RFA) is the same arrangement as used for LEED, ®gure 3.3; the only diVerence is that one ramps, and may modulate the retarding voltage V on the grid (or the sample), collecting all the electrons with energy E.eV, i.e. the RFA is a high pass ®lter. The advantage of the RFA is simplicity and availability, plus the very large angular collection range; the disadvantage lies in the poor signal to noise ratio inherent in diVerentiating the collected signal (once or twice) to get the spectrum of interest.
One can appreciate these points by drawing a spectrum such as ®gure 3.7 and convincing yourself that the signal intensity collected, I, collected by an RFA corresponds to

78 3 Electron-based techniques
Figure 3.9. Electron energy analyzers: (a) and (b) the cylindrical mirror analyzer (CMA), (a) in the normal orientation using a concentrically mounted electron gun; (b) in an oV-axis geometry to accommodate a bulky ®nal magnetic lens (after Venables et al. 1980); (c) the concentric hemispherical analyzer (CHA), with pre-analyzer lenses allowing retardation and variable energy resolution, and/or multichannel detection; (d) a display analyzer used for synchrotron radiation (SR) research, with a multi-channel plate (MCP) parallel recording detector (after Daimon et al. 1995, reproduced with permission).
I5eEE0N(E)dE, |
(3.2) |
so that an N(E) spectrum corresponds to diVerentiating the signal once, and a dN/dE spectrum to diVerentiating twice. These two types of spectrum are shown in ®gure 3.8, ignoring the diVerence between N(E) and E´N(E), which is discussed next.
The electron energy analyzers in common use are the cylindrical mirror analyzer (CMA) and concentric hemispherical analyzer (CHA), shown in ®gure 3.9. These are both band pass ®lters, passing a band of energy (DE) at a pass energy E, typically by adjusting a slit width (w) to change the energy resolution DE/E. These analyzers can be operated with retardation, so that the pass energy is less than the energy of the electron being analyzed; this is easier for the CHA, with retarding lenses in front of the analyzer, and can lead to a high energy resolution in the resulting spectrum. If the analyzer is retarded to a constant pass energy, then the spectrum re¯ects N(E), which is often peaked at low energies, since secondary electron emission is strong. If there is no retardation, or if the pass energy is a constant fraction of the analyzed energy, then the spectrum re¯ects E´N(E).
The goal of energy analysis is to combine high energy resolving power r5(E/DE),

3.3 Inelastic scattering techniques |
79 |
|
|
Figure 3.10. Energy levels and density of states of aluminum as (a) an atom, (b) a metal and
(c) an oxide (after Bauer 1975, and Chattarji 1976; reproduced with permission).
with a high collection solid angle V. It is not very surprising that nature doesn't like you doing that: it suggests getting something for nothing. So the various analyzers have been optimized by all the tricks one can think of, such as second order focusing, where changing the angle of incidence to the optic axis a, produces aberrations of order a2 or higher. The net result is that the energy resolution looks like
DE/E5A(w/L)1Ba n, |
(3.3) |
where L is a characteristic size of the analyzer, and A, B and n,2 are constants for the equipment (Roy & Carette 1977, Moore et al. 1989). If one can detect neighboring energies in parallel, so much the better; this can be done relatively easily with the CHA, but is more diYcult with the CMA.
3.3.2Photoelectron spectroscopies: XPS and UPS
A comparison of the three main analytical techniques which use electron emission can be understood in relation to ®gure 3.10. UPS uses ultra-violet radiation as the probe, and collects electrons directly from the valence band, whereas XPS excites a core hole with X-rays. The core line is often split by spin-orbit interactions, whereas the valence

803 Electron-based techniques
line is wider because of band broadening, indicated by the N(E) distributions in ®gures 3.10(b,c). An outline of photoemission models is given by Lüth (1993/5 chapter 6). The wide range of applications can be appreciated from the early case studies compiled by Ley & Cardona (1979) and the text by Hüfner (1996).
The third technique illustrated directly in ®gure 3.10 is AES, which can be excited by (X-ray) photons or, more usually, electrons. The basic Auger process involves three electrons, and leaves the atom doubly ionized. In general, XPS and AES are used for species identi®cation, and core level shifts in XPS can also give chemical state identi®- cation. AES is routinely used to check surface cleanliness. UPS, especially ARUPS, is the main technique for determining band structure (of solids, not just the surface) and can also identify surface states. The surface sensitivity depends primarily on the energy of the outgoing electron.
Some details about the X-ray sources and monochromators used are given by Lüth (1993/5, panel 11) where the importance of synchrotron radiation sources to current research is emphasized. These sources have high intensity over a range of energies and very well de®ned direction, so that they are well suited to AR-studies; such studies form a substantial part of the wide-ranging programs at synchrotron facilities such as the Advanced Light Source (ALS) in the USA, the Daresbury Synchrotron Radiation Source (SRS) in the UK, HASYLAB or BESSY in Germany, the ESRF in France or the SPring 8 in Japan, to name only a few. Much useful information on these and other programs can be obtained directly via the internet, as indicated in Appendix D.
Until one has visited one of these installations, it is diYcult to grasp the scale and complexity of the operation. Although the end product research overlaps strongly with that coming out of small scale laboratories, the tradition derives more from large budget particle physics, with the consequent need for substantial long range planning and technical backup. By the time one gets to the individual researcher/user, who is typically based at a university or industrial laboratory located some distance away, and who has a limited amount of `beam time' allotted on a particular `station', one is into social structures in addition to science. Safety training, where to (and how much) sleep, group organization and continuity are all extremely important factors in¯uencing whether good work is produced. Stress is important as a spur to achievement in science, but sometimes it can get out of hand. As one who has never actually worked in such a facility, I can imagine that it takes a bit of getting used to, and strategies for eVective working need to be thought about explicitly. Nonetheless, the upside is that all this wonderful equipment, and expert help, is available to help you produce the results you need!
There have been several attempts to develop display analyzers, where the angular information is displayed in parallel at a given energy, which is swept serially (or vice versa). All these analyzers are technically demanding attempts to utilize the beam time and low counting rate eYciently, and have typically been constructed for a synchrotron environment (Eastman et al. 1980, Leckey et al. 1990, Daimon 1988, Daimon et al. 1995). This last spectrometer is shown in ®gure 3.9(d), indicating that several ®nely fashioned grids are required to keep the ®elds in the diVerent regions of the spectrometer isolated from each other. Designing a usable wide angle, gridless analyzer design remains quite challenging (e.g. Huang et al. 1993), but there are always some projects