Camenzind_Analog design chips

1/f noise 6-6 555 Timer 11-2

AC analysis 2-3

Active emitter length 1-19 Active filters 13-1

Active load 4-4 Aluminum 1-6 AM detection 12-5 Antimony 1-10 Arsenic 1-10 Auto-zero 8-15

Back-gate 1-26 Bandgap curvature 7-5 Bandgap References 7-1 Band-pass filters 13-6 Bardeen 1-8

Base 1-9

Bel 6-1

Bell Laboratories 1-7, 1-9, 6-1 Berkeley 2-1

Bessel 13-3, 13-5 BICMOS 1-17, 1-33 Bipolar transistor 1-9, 1-34

Bipolar transistor model 2-10 Boltzman constant 1-6 Boost regulator 14-11

Boron 1-4

Brattain 1-7

Braun, Ferdinand 1-2 Breakdown voltage 1-6 Brokaw 7-3

BSIM 2-14

Buck regulator 14-9 Buried layer 1-17 Buried Zener diode 1-29 Butterworth 13-3, 13-5

Capacitance 1-6 Capacitor models 2-17 Capacitors 1-32

Index

Capture range 12-4 Cascode 1-22 Cat's whisker 1-2 Cauer 13-7 Channel 1-25

Chebyshev 13-3, 13-5 Chopper-stabilized amplifiers 8-15 Class A 14-12

Class B 14-12

Class AB 14-13

Class D 14-16

CMOS current sources 5-7 CMOS transistors 1-23 Collector 1-9 Common-mode 8-2 Comparators 9-1 Concen6ration 1-5 Conduction band 1-3 Copper-oxide 1-2

Crystal oscillators 11-16 Current comparators 9-6 Current density 7-2 Current gain 2-11 Current ratio 3-5 Current sinks 3-2 Current sources 3-2, 5-1

Darlington configuration 4-7 Darlington, Sidney 4-8

dB 6-1

DC analysis 2-2 Decibel 6-1 Delta-VBE 7-2

Depletion layer 1-6, 1-18 Depletion region 1-5 Differential pair 4-1 Diffused resistors 1-30 Diffusion 1-10

Diffusion current 1-6, 2-9 Diode 1-2, 1-5, 1-27 Diode model 2-8

Diode-connected transistor 1-28

Distortion 2-5, 6-6, 8-16, 10-2 Doping 1-5

Doping level 1-5, 1-6 Drain 1-24

Dynamic emitter resistance 4-2, 10-1

Early effect 1-18

Early voltage 1-18

Electro-migration 14-5

Electron charge 1-6

Electron orbits 1-3

Electrons 1-3

Elliptic filter 13-7

Emitter 1-9

Emitter ratios 3-5

End-effect 1-30

Energy bands 1-3

Enhancement mode 1-25

Epitaxial layer 1-17

Erdi current source 5-6

Fairchild Semiconductor 1-11 Fast Fourier transform 2-5, 6-6 Filters 13-1

Flicker noise 6-6 FM detection 12-5

Folded cascode stage 8-5 Fourier 6-6

Fourier analysis 2-5, 6-6 Fourier transform 2-5 Four-quadrant multiplier 12-1

Frequency compensation 6-9, 8-2 ft 1-22

Gain 1-9, 1-18, 2-11 Gain control 10-2 Galena 1-2

Gallium 1-10

Gate capacitance 1-33 Gaussian distribution 2-6 Germanium 1-3

Gibney, Robert B. 1-8 Global nodes 2-12

gm 4-2

Group delay 13-4

Hall effect 1-2, 1-4 Hall, Edwin 1-2 Harmonics 6-7 hFE 1-18

High-pass filters 13-6

Hilbiber 7-1

Hoerni 1-11, 1-12

Holes 1-4

HSPICE 2-14

Hysteresis 9-2

Implanted resistors 1-30 Integrated circuit 1-13 Intermodulation distortion 6-8 Ion Implantation 1-17

Is 1-6

Isolation 1-17, 1-18, 1-20

Johnson noise 6-5

Junction capacitance 1-6, 1-21 Junction isolation 1-18 Junction transistor 1-9, 1-10

k 1-5, 1-26 Kilby 1-13

Lateral PNP transistor 1-22 Lateral PNP transistor model 2-13 Lead sulfite 1-2

LC oscillators 11-15 Lock range 12-4 Low drop-out 14-4 Low-pass filters 13-1

Mask 1-12, 1-14 Matching 1-23, 1-31 Mesa transistor 1-11 Miller capacitance 1-21 Miller effect 1-21 Minority carriers 1-9

Mixed-mode processes 1-33 Models 2-1, 2-8

Monte Carlo analysis 2-7 Moore 1-11

MOS transistor 1-23

MOS transistor model 2-14 Multiplier 12-1

Neper 6-1

Noise 2-11, 6-4

Noise analysis 2-4

Noise current 6-5

Noise voltage 2-4

Normal distribution 2-6

Noyce 1-11, 1-13

NPN transistor 1-10, 1-16, 1-17 NPN transistor model 2-12 N-type 1-4

nV/rtHz 2-4, 6-6 N-well 1-24, 1-26

Offset voltage 4-2 Ohm-cm 1-6

Ohms per square (Ω/*) 1-29 Op-amps 8-1

Oscillator 11-4 OTA 10-1

Pad models 2-17 Parallel resonance 11-18 Pederson 2-1

Phase 2-3, 6-9

Phase margin 6-13, 8-3 Phase-locked loop 12-1 Phosphorus 1-4 Photoresist 1-12, 1-14 Pin models 2-17

Pinch resistors 1-31 Planar process 1-12, 1-14 PLL 12-1

PNP transistors 1-10 Point-contact transistor 1-9, 1-10 Pole 6-9

Poly resistors 1-30 Poly-crystalline silicon 1-24 Positive feedback 11-7 Power amplifiers 14-12, 14-5 P-type 1-4

Pulse generator 11-12

Pulse-width modulation 14-8, 14-16 Punch-through 1-21

PWM 14-8, 14-16

q 1-6

Radiation 14-18 Rail-to-rail 8-14, 9-5 re 4-1, 10-1 Regulators 14-1, 14-8 Resistivity 1-6, 1-29 Resistor models 2-16 Resistor noise 6-5 Resistors 1-29

Rho (ρ) 1-6

Ring oscillator 12-6

RMS 6-2

Root-mean-square 6-3

Sallen & Key filter 13-2 Schmitt trigger 12-7 Schmitt, Otto 12-8 Schottky diode 1-3 Second-order temperature

compensation 7-7 Seebeck coefficient 1-31 Selenium 1-2, 1-3 Self-aligning 1-24 Self-insulating 1-24 Semiconductors 1-2 Sensitivity analysis 2-3 Series resonance 11-18 Sheet resistance 1-29 Shockley 1-7

Shockley Semiconductor Laboratories 1-11

Shot noise 6-5 Signetics 11-1 Silicon 1-3

Silicon, density 1-5 Silicon-dioxide 1-12 Simetrix 2-1, 2-5, 2-6 Sine-wave generator 11-11 Single crystal 1-3

Slew rate 8-4 Source 1-24

Space-charge layer 1-5 SPICE 2-1

Split collector 1-23 Spread spectrum 14-18 Standard cells 1-1 Start-up 5-6

Steinmetz 6-2

Subcircuit 2-11 Substrate current 1-20

Substrate PNP transistor 1-20, 1-27 Surface 1-7

Switched-capacitor filters 13-8 Switching regulators 14-8 Switching power amplifiers 14-15

Threshold voltage 1-26

Timers 11-4, 11-14

Transconductance 1-26