Cadence / DSD 4 / appendixa

DEEP SUBMICRON CMOS DESIGN

Appendix A – Design Rules

PARAMETER

KEYWORD

DEFINITION

TYPICAL VALUE 0.25µm

NMOS

pMOS

VTO Mos2

l3v2to

Threshold

voltage

for

0.5V

-0.5V

MOS2

VTO Mos3

l3v3to

Threshold

voltage

for

0.7V

-0.7V

MOS3

U0 Mos2

l3u2

Mobility for MOS2

0.06

0.025

U0 Mos3

l3u3

Mobility for MOS3

0.06

0.025

TOX Mos 2

l3t2ox

Thin oxide thickness

for

3nm

3nm

MOS2

TOX Mos 3

l3t3ox

Thin oxide thickness

for

7nm

7nm

MOS3

Parameter

Keyword

Description

NMOS value

PMOS value

in 0.12µm

in 0.12µm

VTHO

b4vtho

Long channel threshold voltage at Vbs =

0.3V

0.3V

0V

VFB

b4vfb

Flat-band voltage

-0.9

-0.9

K1

b4k1

First-order body bias coefficient

0.45 V1/2

0.45 V1/2

K2

b4k2

Second-order body bias coefficient

0.1

0.1

DVT0

b4d0vt

First coefficient of short-channel effect on

2.2

2.2

threshold voltage

DVT1

b4d1vt

Second coefficient of short-channel effect

0.53

0.53

on Vth

ETA0

b4et

Drain induced barrier lowering coefficient

0.08

0.08

NFACTOR

B4nf

Sub-threshold turn-on swing factor.

1

1

Controls the exponential increase of current

with Vgs.

U0

b4u0

Low-field mobility

0.060 m2/Vs

0.025 m2/Vs

UA

b4ua

Coefficient of first-order mobility

11.0e-15 m/V

11.0e-15 m/V

degradation due to vertical field

UC

b4uc

Coefficient of mobility degradation due to

-0.04650e-15

-0.04650e-15

body-bias effect

V-1

V-1

VSAT

b4vsat

Saturation velocity

8.0e4 m/s

8.0e4 m/s

WINT

b4wint

Channel-width offset parameter

0.01e-6µm

0.01e-6µm

LINT

b4lint

Channel-length offset parameter

0.01e-6µm

0.01e-6µm

PSCBE1

b4pscbe1

First substrate current induced body-effect

4.24e8 V/m

4.24e8 V/m

mobility reduction

PSCBE2

b4pscbe2

Second substrate current induced body-

4.24e8 V/m

4.24e8 V/m

effect mobility reduction

KT1

b4kt1

Temperature coefficient of the threshold

-0.1V

-0.1V

voltage.

UTE

b4ute

Temperature coefficient for the zero-field

-1.5

-1.5

mobility U0.

VOFF

b4voff

Offset voltage in subthreshold region.

-0.08V

-0.08V

A-11

E. Sicard, S. Delmas-Bendhia

20/12/03

DEEP SUBMICRON CMOS DESIGN

Appendix A – Design Rules

PCLM

b4pclm

Parameter for channel length modulation

1.2

1.2

TOXE

b4toxe

Gate oxide thickness

3.5e-

3.5e-

9m

9m

NDEP

b4nd

0.54

0.54

ep

XJ

b4xj

Junction depth

1.5e-7

1.5e-7

A-12

E. Sicard, S. Delmas-Bendhia

20/12/03

DEEP SUBMICRON CMOS DESIGN

Appendix A – Design Rules

9. Design Rule File

MICROWIND 2.0

* Contact (19)

*

r401 = 2 (contact width)

* Rule File for CMOS 0.18µm

r402 = 3 (contact spacing)

* Date : 18 May 98 by Etienne Sicard

r403 = 2 (metal border for contact)

* Date : 27 April 99 By Etienne/Fabrice

r404 = 2 (poly border for contact)

*

16 May 99 r603 dist via/contact

r405 = 2 (diff border for contact)

*

23 Jun 99 KOR mm9

* metal (23)

*

04 Jan 00 smaller dT

r501 = 3 (metal width)

*

19 Fev 00 STI, Niso, LL, high VT, LIL

r502 = 4 (metal spacing)

*

* via (25)

* status : preliminary

r601 = 3 (Via width)

*

r602 = 4

(Spacing)

NAME CMOS 0.18µm - 6 Metal

r603 = 0

(via/contact)

*

r604 = 2 (border of metal&metal2)

lambda = 0.1 (Lambda is set to half the gate size)

* metal 2 (27)

metalLayers = 6 (Number of metal layers : 6)

r701 = 3 (Metal 2 width)

lowK = 4.0

(inter-metal oxide)

r702 = 4

(spacing)

lil = 1

(local interconnect layer 1=enable, 0=

* via 2 (32)

disable)

r801 = 3 (Via width)

tox = 0.004 (fast MOS oxide in µm 0.0=disable)

r802 = 4

(Spacing)

hvtox= 0.007 (high voltage MOS oxide)

r804 = 2 (border of metal2&metal3)

salicide = 0 (Enable salicide 1=enable 0= disable)

* metal 3 (34)

*

r901 = 3

(width)

* Design rules associated to each layer

r902 = 4

(spacing)

*

* via 3 (35)

* Well (Gds2 level 1)

ra01 = 3 (Via width)

r101 = 10 (well width)

ra02 = 4

(Spacing)

r102 = 11 (well spacing)

ra04 = 2 (border of metal3&metal4)

*

* metal 4 (36)

* Diffusion (N+ 16, P+ 17, active 2)

rb01 = 3

(width)

*

rb02 = 4

(spacing)

r201 = 4 (diffusion width)

* via 4 (52)

r202 = 4 (diffusion spacing)

rc01 = 3 (Via width)

r203 = 6 (border of nwell on diffp)

rc02 = 4

(Spacing)

r204 = 6 (nwell to next diffn)

rc04 = 2 (border of metal4&metal5)

*

* metal 5 (53)

* Poly (13)

rd01 = 8

(width)

*

r301 = 2 (poly width)

r302 = 2 (ngate width)

<section>

r303 = 2 (pgate width)

A-13

E. Sicard, S. Delmas-Bendhia

20/12/03

DEEP SUBMICRON CMOS DESIGN

Appendix A – Design Rules

CODE

DESCRIPTION

TYPICAL VALUE

VDD

Supply voltage of the chip

2.0 V

<add default.rul>

14

E.Sicard, S. Delmas-Bendhia

20/12/03