Nexperia

BSH111BK

55 V, N-channel Trench MOSFET

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

ID = 250 µA; VGS = 0 V; Tj = 25 °C

55

-

-

V

breakdown voltage

VGSth

gate-source threshold

ID = 250 µA; VDS = VGS; Tj = 25 °C

0.6

1

1.3

V

voltage

IDSS

drain leakage current

VDS = 55 V; VGS = 0 V; Tj = 25 °C

-

-

1

µA

IGSS

gate leakage current

VGS = 10 V; VDS = 0 V; Tj = 25 °C

-

-

5

µA

VGS = -10 V; VDS = 0 V; Tj = 25 °C

-

-

-5

µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C

-

-

0.3

µA

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C

-

-

-0.3

µA

RDSon

drain-source on-state

VGS = 4.5 V; ID = 200 mA; Tj = 25 °C

-

2.3

4

Ω

resistance

VGS = 4.5 V; ID = 200 mA; Tj = 150 °C

-

4.7

8.1

Ω

VGS = 2.5 V; ID = 75 mA; Tj = 25 °C

-

2.7

5

Ω

VGS = 1.8 V; ID = 30 mA; Tj = 25 °C

-

4.8

-

Ω

gfs

forward

VDS = 10 V; ID = 200 mA; Tj = 25 °C

-

0.64

-

S

transconductance

Dynamic characteristics

QG(tot)

total gate charge

VDS = 30 V; ID = 200 mA; VGS = 4.5 V;

-

0.5

-

nC

Tj = 25 °C

QGS

gate-source charge

-

0.08

-

nC

QGD

gate-drain charge

-

0.16

-

nC

Ciss

input capacitance

VDS = 30 V; f = 1 MHz; VGS = 0 V;

-

19.1

30

pF

Tj = 25 °C

Coss

output capacitance

-

2.7

10

pF

Crss

reverse transfer

-

1.5

7

pF

capacitance

td(on)

turn-on delay time

VDS = 30 V; ID = 200 mA; VGS = 4.5 V;

-

8.3

12

ns

RG(ext) = 6 Ω; Tj = 25 °C

tr

rise time

-

8.4

-

ns

td(off)

turn-off delay time

-

12.6

16

ns

tf

fall time

-

4.8

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 200 mA; VGS = 0 V; Tj = 25 °C

-

0.86

1.2

V

BSH111BK

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© Nexperia B.V. 2017. All rights reserved

Product data sheet

26 November 2014

6 / 16

Nexperia

BSH111BK

55 V, N-channel Trench MOSFET

0.8

aaa-015681

10-3

aaa-015682

ID

VGS = 4.5 V

3.0 V

ID

(A)

(A)

0.6

2.6 V

(1)

(2)

(3)

10-4

2.4 V

0.4

2.2 V

10-5

0.2

1.8 V

0

10-6

0

1

2

3 VDS (V)

4

0

0.5

1.0

1.5 VGS (V) 2.0

Tj = 25 °C

Tj = 25 °C; VDS = 5 V

Fig. 6. Output characteristics: drain current as a

(1) minimum values

(2) typical values

function of drain-source voltage; typical values

(3) maximum values

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

10

aaa-015683

20

aaa-015684

1.8 V

2 V

2.2 V

2.4 V

RDSon

RDSon

(Ω)

(Ω)

8

2.6 V

15

6

2.8 V

10

3 V

4

VGS = 4.5 V

5

(1)

2

(2)

0

0

0.2

0.4

0.6

0.8

0 0

2

4

6

8

10

ID (A)

VGS (V)

Tj = 25 °C

ID = 0.2 A

Fig. 8. Drain-source on-state resistance as a function

(1) Tj = 150 °C

(2) Tj = 25 °C

of drain current; typical values

Fig. 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

BSH111BK

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2017. All rights reserved

Product data sheet

26 November 2014

7 / 16

Nexperia

BSH111BK

55 V, N-channel Trench MOSFET

0.6

aaa-015685

2.5

aaa-015686

a

ID

(A)

2.0

0.5

(1)

0 0

1

2

3 VGS (V) 4

0-60

0

60

120 Tj (°C) 180

VDS > ID × RDSon

Fig. 11. Normalized drain-source on-state resistance

(1)

Tj = 25 °C

as a function of junction temperature; typical

(2)

Tj = 150 °C

values

2.0

aaa-015687

102

aaa-015688

VGS(th)

(V)

1.5

C

(pF)

(1)

(1)

1.0

(2)

10

0.5

(3)

(2)

0

1

(3)

0

60

120

180

1

10

102

-60

10-1

Tj (°C)

VDS (V)

ID = 0.25 mA; VDS = VGS

f = 1 MHz; VGS = 0 V

(1) maximum values

(1) Ciss

(2) typical values

(2) Coss

(3) minimum values

(3) Crss

Fig. 12. Gate-source threshold voltage as a function of

Fig. 13. Input, output and reverse transfer capacitances

junction temperature

as a function of drain-source voltage; typical

values

BSH111BK

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© Nexperia B.V. 2017. All rights reserved

Product data sheet

26 November 2014

8 / 16

Nexperia

BSH111BK

55 V, N-channel Trench MOSFET

5

aaa-015689

VDS

VGS

(V)

4

ID

3

VGS(pl)

VGS(th)

2

VGS

QGS1

QGS2

1

QGS

QGD

QG(tot)

003aaa508

0 0

0.2

0.4

0.6

Fig. 15. MOSFET transistor: Gate charge waveform

QG (nC)

definitions

ID = 0.2 A; VDS = 30 V; Tamb = 25 °C

0.20

aaa-015690

0 0

0.4

0.8

1.2

VSD (V)

BSH111BK

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2017. All rights reserved

Product data sheet

26 November 2014

9 / 16