BSH111BK
55 V, N-channel Trench MOSFET
26 November 2014 Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.Features and benefits
•Low threshold voltage
•Very fast switching
•Trench MOSFET technology
•ElectroStatic Discharge (ESD) protection > 3 kV HBM
3.Applications
•Relay driver
•High-speed line driver
•Low-side loadswitch
•Switching circuits
4.Quick reference data
Table 1. |
Quick reference data |
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Symbol |
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Parameter |
Conditions |
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Min |
Typ |
Max |
Unit |
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VDS |
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drain-source voltage |
Tj = 25 °C |
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- |
- |
55 |
V |
VGS |
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gate-source voltage |
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-10 |
- |
10 |
V |
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ID |
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drain current |
VGS = 4.5 |
V; Tamb = 25 °C |
[1] |
- |
- |
210 |
mA |
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VGS = 4.5 |
V; Tsp = 25 °C |
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- |
- |
335 |
mA |
Static characteristics |
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RDSon |
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drain-source on-state |
VGS = 4.5 |
V; ID = 200 mA; Tj = 25 °C |
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- |
2.3 |
4 |
Ω |
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resistance |
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[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia |
BSH111BK |
|
55 V, N-channel Trench MOSFET |
5. |
Pinning information |
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Table 2. |
Pinning information |
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Pin |
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Symbol |
Description |
Simplified outline |
Graphic symbol |
1 |
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G |
gate |
3 |
D |
2 |
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S |
source |
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3 |
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D |
drain |
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G |
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1 |
2 |
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TO-236AB (SOT23) |
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S |
017aaa255
6. Ordering information
Table 3. Ordering information
Type number |
Package |
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Name |
Description |
Version |
BSH111BK |
TO-236AB |
plastic surface-mounted package; 3 leads |
SOT23 |
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7. Marking
Table 4. Marking codes
Type number |
Marking code |
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[1] |
BSH111BK |
%4T |
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[1]% = placeholder for manufacturing site code
BSH111BK |
All information provided in this document is subject to legal disclaimers. |
© Nexperia B.V. 2017. All rights reserved |
Product data sheet |
26 November 2014 |
2 / 16 |
Nexperia |
BSH111BK |
|
55 V, N-channel Trench MOSFET |
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol |
Parameter |
Conditions |
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Min |
Max |
Unit |
VDS |
drain-source voltage |
Tj = 25 °C |
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- |
55 |
V |
VGS |
gate-source voltage |
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-10 |
10 |
V |
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ID |
drain current |
VGS = 4.5 V; Tamb = 25 °C |
[1] |
- |
210 |
mA |
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VGS = 4.5 V; Tamb = 100 °C |
[1] |
- |
130 |
mA |
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VGS = 4.5 V; Tsp = 25 °C |
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- |
335 |
mA |
IDM |
peak drain current |
Tamb = 25 °C; single pulse; tp ≤ 10 µs |
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- |
0.85 |
A |
Ptot |
total power dissipation |
Tamb = 25 °C |
[2] |
- |
302 |
mW |
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[1] |
- |
364 |
mW |
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Tsp = 25 °C |
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- |
1449 |
mW |
Tj |
junction temperature |
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-55 |
150 |
°C |
Tamb |
ambient temperature |
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-55 |
150 |
°C |
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Tstg |
storage temperature |
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-65 |
150 |
°C |
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Source-drain diode |
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IS |
source current |
Tamb = 25 °C |
[1] |
- |
200 |
mA |
[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2]Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
120 |
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017aaa123 |
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Pder |
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(%) |
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80 |
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40 |
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0 |
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- 75 |
- 25 |
25 |
75 |
125Tj (°C)175 |
Fig. 1. Normalized total power dissipation as a function of junction temperature
120 |
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017aaa124 |
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Ider |
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(%) |
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80 |
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40 |
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0 |
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- 75 |
- 25 |
25 |
75 |
125Tj (°C)175 |
Fig. 2. Normalized continuous drain current as a function of junction temperature
BSH111BK |
All information provided in this document is subject to legal disclaimers. |
© Nexperia B.V. 2017. All rights reserved |
Product data sheet |
26 November 2014 |
3 / 16 |
Nexperia |
BSH111BK |
|
55 V, N-channel Trench MOSFET |
1 |
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aaa-015680 |
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(1) |
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ID |
Limit RDSon = VDS/ID |
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(2) |
(A) |
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10-1 |
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(3) |
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(4) |
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(5) |
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(6) |
10-2 |
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(7) |
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10-3 |
1 |
10 |
102 |
10-1 |
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VDS (V) |
IDM = single pulse
(1)tp = 10 µs
(2)tp = 100 µs
(3)tp = 1 ms
(4)tp = 10 ms
(5)DC; Tsp = 25 °C
(6)tp = 100 ms
(7)DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6. |
Thermal characteristics |
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Symbol |
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Parameter |
Conditions |
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Min |
Typ |
Max |
Unit |
Rth(j-a) |
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thermal resistance |
in free air |
[1] |
- |
351 |
404 |
K/W |
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from junction to |
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[2] |
- |
271 |
311 |
K/W |
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ambient |
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Rth(j-sp) |
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thermal resistance |
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- |
65 |
75 |
K/W |
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from junction to solder |
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point |
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[1]Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
BSH111BK |
All information provided in this document is subject to legal disclaimers. |
© Nexperia B.V. 2017. All rights reserved |
Product data sheet |
26 November 2014 |
4 / 16 |
Nexperia |
BSH111BK |
|
55 V, N-channel Trench MOSFET |
103 |
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aaa-014128 |
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Zth(j-a) |
duty cycle = 1 |
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(K/W) |
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0.75 |
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0.50 |
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102 |
0.33 |
0.25 |
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0.20 |
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0.10 |
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0.05 |
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0.01 |
0.02 |
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0 |
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10 |
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10-2 |
10-1 |
1 |
10 |
102 |
103 |
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10-3 |
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tp (s) |
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FR4 PCB, standard footprint |
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Fig. 4. |
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values |
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103 |
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aaa-014129 |
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Zth(j-a) |
duty cycle = 1 |
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(K/W) |
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0.75 |
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0.50 |
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102 |
0.33 |
0.25 |
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0.20 |
0.10 |
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0.05 |
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0.01 |
0.02 |
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0 |
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10 |
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10-2 |
10-1 |
1 |
10 |
102 |
103 |
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10-3 |
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tp (s) |
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FR4 PCB, mounting pad for drain 1 cm2 |
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Fig. 5. |
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values |
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BSH111BK |
All information provided in this document is subject to legal disclaimers. |
© Nexperia B.V. 2017. All rights reserved |
Product data sheet |
26 November 2014 |
5 / 16 |