1/05—Revision 0: Initial Version
Rev. 0 | Page 2 of 16
AD8397
SPECIFICATIONS
VS = ±1.5 V or +3 V (@ TA = 25°C, G = +1, RL = 25 Ω, unless otherwise noted).
Table 1.
Parameter
|
Test Conditions/Comments
|
Min Typ Max
|
Unit
|
DYNAMIC PERFORMANCE −3 dB Bandwidth 0.1 dB Flatness
Large Signal Bandwidth Slew Rate
|
VOUT = 0.1 V p-p VOUT = 0.1 V p-p VOUT = 2.0 V p-p VOUT = 0.8 V p-p
|
50 3.6 9 32
|
MHz MHz MHz V/µs
|
NOISE/DISTORTION PERFORMANCE Distortion (Worst Harmonic) Input Voltage Noise Input Current Noise
|
fC = 100 kHz, VOUT = 1.4 V p-p, G = +2 f = 100 kHz f = 100 kHz
|
−90 4.5 1.5
|
dBc nV/ÖHz pA/ÖHz
|
DC PERFORMANCE Input Offset Voltage
Input Offset Voltage Match Input Bias Current
Input Offset Current Open-Loop Gain
|
TMIN − TMAX
TMIN − TMAX
VOUT = ±0.5 V
|
1.0 2.5 2.5 1.0 2.0 200 900 1.3 50 300 81 88
|
mV mV mV nA µA nA dB
|
INPUT CHARACTERISTICS Input Resistance Input Capacitance Common-Mode Rejection
|
f = 100 kHz
∆VCM = ±1 V
|
87 1.4 −71 −80
|
kΩ pF dB
|
OUTPUTCHARACTERISTICS Output Resistance +Swing −Swing +Swing −Swing Maximum Output Current
|
RLOAD = 25 Ω RLOAD = 25 Ω RLOAD = 100 Ω RLOAD = 100 Ω SFDR £ −70 dBc, f = 100 kHz, VOUT = 0.7 VP, RLOAD = 4.1 Ω
|
0.2 +1.39 +1.43 −1.4 −1.37 +1.45 +1.48 −1.47 −1.44 170
|
Ω VP VP VP VP mA
|
POWER SUPPLY
Operating Range (Dual Supply) Supply Current Power Supply Rejection
|
∆VS = ±0.5 V
|
±1.5 ±12.0 6 7 8.5 −70 −82
|
V mA/Amp dB
|
Rev. 0 | Page 3 of 16
AD8397
VS = ±2.5V or +5 V (@ TA = 25°C, G = +1, RL = 25 Ω, unless otherwise noted).
Table 2.
Parameter
|
Test Conditions/Comments
|
Min Typ Max
|
Unit
|
DYNAMIC PERFORMANCE −3 dB Bandwidth 0.1 dB Flatness
Large Signal Bandwidth Slew Rate
|
VOUT = 0.1 V p-p VOUT = 0.1 V p-p VOUT = 2.0 V p-p VOUT = 2.0 V p-p
|
60 4.8 14 53
|
MHz MHz MHz V/µs
|
NOISE/DISTORTION PERFORMANCE Distortion (Worst Harmonic) Input Voltage Noise Input Current Noise
|
fC = 100 kHz, VOUT = 2 V p-p, G = +2 f = 100 kHz f = 100 kHz
|
−98 4.5 1.5
|
dBc nV/ÖHz pA/ÖHz
|
DC PERFORMANCE Input Offset Voltage
Input Offset Voltage Match Input Bias Current
Input Offset Current Open-Loop Gain
|
TMIN − TMAX
TMIN − TMAX
VOUT = ±1.0 V
|
1.0 2.4 2.5 1.0 2.0 200 900 1.3 50 300 85 90
|
mV mV mV nA µA nA dB
|
INPUT CHARACTERISTICS Input Resistance Input Capacitance Common-Mode Rejection
|
f = 100 kHz
∆VCM = ±1 V
|
87 1.4 −76 −80
|
kΩ pF dB
|
OUTPUTCHARACTERISTICS Output Resistance +Swing −Swing +Swing −Swing Maximum Output Current
|
RLOAD = 25 Ω RLOAD = 25 Ω RLOAD = 100 Ω RLOAD = 100 Ω SFDR £ −70 dBc, f = 100 kHz, VOUT = 1.0 VP, RLOAD = 4.3 Ω
|
0.2 +2.37 +2.42 −2.37 −2.32 +2.45 +2.48 −2.46 −2.42 230
|
Ω VP VP VP VP mA
|
POWER SUPPLY
Operating Range (Dual Supply) Supply Current Power Supply Rejection
|
∆VS = ±0.5 V
|
±1.5 ±12.6 7 9 12 −75 −85
|
V mA/Amp dB
|
Rev. 0 | Page 4 of 16
AD8397
VS = ±5 V or +10 V (@ TA = 25°C, G = +1, RL = 25 Ω, unless otherwise noted).
Table 3.
Parameter
|
Test Conditions/Comments
|
Min Typ Max
|
Unit
|
DYNAMIC PERFORMANCE −3 dB Bandwidth 0.1 dB Flatness
Large Signal Bandwidth Slew Rate
|
VOUT = 0.1 V p-p VOUT = 0.1 V p-p VOUT = 2.0 V p-p VOUT = 4.0 V p-p
|
66 6.5 14 53
|
MHz MHz MHz V/µs
|
NOISE/DISTORTION PERFORMANCE Distortion (Worst Harmonic) Input Voltage Noise Input Current Noise
|
fC = 100 kHz, VOUT = 6 V p-p, G = +2 f = 100 kHz f = 100 kHz
|
−94 4.5 1.5
|
dBc nV/ÖHz pA/ÖHz
|
DC PERFORMANCE Input Offset Voltage
Input Offset Voltage Match Input Bias Current
Input Offset Current Open-Loop Gain
|
TMIN − TMAX
TMIN − TMAX
VOUT = ±2.0 V
|
1.0 2.5 2.5 1.0 2.0 200 900 1.3 50 300 85 94
|
mV mV mV nA µA nA dB
|
INPUT CHARACTERISTICS Input Resistance Input Capacitance Common-Mode Rejection
|
f = 100 kHz
∆VCM = ±1 V
|
87 1.4 −84 −94
|
kΩ pF dB
|
OUTPUTCHARACTERISTICS Output Resistance +Swing −Swing +Swing −Swing Maximum Output Current
|
RLOAD = 25 Ω RLOAD = 25 Ω RLOAD = 100 Ω RLOAD = 100 Ω SFDR £ −80 dBc, f = 100 kHz, VOUT = 3 VP, RLOAD = 12 Ω
|
0.2 +4.7 +4.82 −4.74 −4.65 +4.92 +4.96 −4.92 −4.88 250
|
Ω VP VP VP VP mA
|
POWER SUPPLY
Operating Range (Dual Supply) Supply Current Power Supply Rejection
|
∆VS = ±0.5 V
|
±1.5 ±12.6 7 9 12 −76 −85
|
V mA/Amp dB
|
Rev. 0 | Page 5 of 16
AD8397
VS = ±12 V or +24 V (@ TA = 25°C, G = +1, RL = 25 Ω, unless otherwise noted).
Table 4.
Parameter
|
Test Conditions/Comments
|
Min Typ Max
|
Unit
|
DYNAMIC PERFORMANCE −3 dB Bandwidth 0.1 dB Flatness
Large Signal Bandwidth Slew Rate
|
VOUT = 0.1 V p-p VOUT = 0.1 V p-p VOUT = 2.0 V p-p VOUT = 4.0 V p-p
|
69 7.6 14 53
|
MHz MHz MHz V/µs
|
NOISE/DISTORTION PERFORMANCE Distortion (Worst Harmonic) Input Voltage Noise Input Current Noise
|
fC = 100 kHz, VOUT = 20 V p-p, G = +5 f = 100 kHz f = 100 kHz
|
−84 4.5 1.5
|
dBc nV/ÖHz pA/ÖHz
|
DC PERFORMANCE Input Offset Voltage
Input Offset Voltage Match Input Bias Current
Input Offset Current Open-Loop Gain
|
TMIN − TMAX
TMIN − TMAX
VOUT = 3.0 V
|
1.0 3.0 2.5 1.0 2.0 200 900 1.3 50 300 90 96
|
mV mV mV nA µA nA dB
|
INPUT CHARACTERISTICS Input Resistance Input Capacitance Common-Mode Rejection
|
f = 100 kHz
∆VCM = ±1 V
|
87 1.4 −85 −96
|
kΩ pF dB
|
OUTPUTCHARACTERISTICS Output Resistance +Swing −Swing
Maximum Output Current
|
RLOAD = 100 Ω RLOAD = 100 Ω SFDR £ −80 dBc, f = 100 kHz, VOUT = 10 VP, RLOAD = 32 Ω
|
0.2 +11.82 +11.89 −11.83 −11.77 310
|
Ω VP VP mA
|
POWER SUPPLY
Operating Range (Dual Supply) Supply Current Power Supply Rejection
|
∆VS = ±0.5 V
|
±1.5 ±12.6 8.5 11 15 −76 −86
|
V mA/Amp dB
|
Rev. 0 | Page 6 of 16
05069-020
AD8397
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
|
Rating
|
Supply Voltage Power Dissipation1 Storage Temperature Operating Temperature Range
Lead Temperature Range (Soldering 10 sec)
Junction Temperature
|
26.4 V
See Figure 4 −65°C to +125°C −40°C to +85°C 300°C
150°C
|
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device.This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sec-tion of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be dissipated safely by the AD8397 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Temporarily exceeding this limit may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package.
4.5
TJ = 150C 4.0
3.5
8-LEAD SOIC EPAD
3.0
2.5
2.0
MAXIMUM POWER DISSIPATION (W)
1.5
J
1 Thermal resistance for standard JEDEC 4-layer board: 8-lead SOIC:qA = 157.6°C/W
J
8-LeadSOIC EPAD: qA = 47.2°C/W8-LEAD SOIC 1.0
0.5
0
–40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE (C)
Figure 4. Maximum Power Dissipationvs. Temperature
ESD CAUTION
ESD
(electrostatic
discharge)
sensitive
device.
Electrostatic
charges
as
high
as
4000
V
readily
accumulate
on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy elec-trostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. 0 | Page 7 of 16
AD8397
TYPICAL PERFORMANCE CHARACTERISTICS