After text activity

I. Reading Exercises:

Exercise 1. Read and memorize using a dictionary:

CMOS process; formidable challenges; etch; gate dielectrics; shallow junctions; raised-source drains; couple products; node; leveraging device strain; drive current; daunt.

Exercise 2. Answer the questions:

1) What are the fundamental electrical components of integrated circuits?

2) What are characteristics of transistors?

3) What kind of new materials will help drive leading-edge transistor technology?

4) How may future changes in the transistor structure involve new techniques?

Exercise 3. Match the left part with the right:

1. These issues demand	a) transistors with gate lengths less than 40 nm.
2. The higher quiescent currents of transistors at this scale will require	b) in size for mare than 40 years.
3. Transistors have been shrinking	c) extremely strict process control.
4. We face the formidable challenges of building	d) extensive system expertise.

Exercise 4. Open brackets choosing the right words:

The (highest(top)(level/standard) of (control/checking) in lithography and etch is (required/requested) to keep the characteristics of (milliard/billion) of these transistors consistent across an entire wafer.

II. Speaking Exercises:

Exercise 1. Describe node; etch; dielectrics; junction; drain; leverage; transistor using the suggested words and expressions as in example:

node a connecting point; at; which; several lines; come together. example: The node is a connecting point at which several lines come together.

etch make; an etching; of; an impression; made; from; an etched plate.

dielectrics a material; such; as; glass; or; porcelain; with; negligible; electrical; or; thermal; conductivity.

junction an act; of; joining; or; adjoining; things; the place; where; two; o more; things; come together.

drain a gradual; depletion; of; energy; or; resources; emptying; accomplished; by; draining.

leverage mechanical advantage; gained; by; being; in; a position; to use; a lever.

transistor a semiconductor; device; capable; of; amplification.

Exercise 2. Ask questions to the given answers:

1) Question: _____________________________________ ?

Answer: Equivalent gate oxides of 1 nm or less will require new high dielectrics to replace traditional silicon oxides.

2) Question: ______________________________________________ ?

Answer: The electrical characteristics of deep-submicron transistors bring new challenges to design not only for process RD, but also at the system level.

3) Question: ______________________________________________ ?

Answer: While much of our RD is currently focused on implementing transistors at the 90-nm node we are also devoting resources to studying transistor design at 65 nm and beyond.