III. Writing exercises:

Exercise 1. Complete the sentences with the suggested words:

tools; with; how; to build; key; process; mix.

For Texas Instruments’ R&D, _______ issue with these _______, as _______ other fundamental _______ developments, is _______ we can use them _______ products with the right _______ of performance, low cost and power efficiency for our customers.

Exercise 2. Fill in the table with words and expressions from the text:

	parts	systems	processes
Example: these types of improvements drive up			the cost of making reticules.
we are also developing
we anticipate
we have to maintain

Exercise 3. Compose a story on one of the topics (up to 100 words):

“Lithography Tools”

“Reticule Enhancements”

“Next generation of Lithography Tools”

“Alternative Technology Matures”

Lesson 9

Read the text: Transistor

The fundamental electrical components of integrated circuits, transistors have been shrinking in size for more than 40 years. In our 90-nm CMOS process, we face the formidable challenges of building transistors with gate lengths less than 40 nm. The highest level of control in lithography and etch is required to keep the characteristics of billions of those transistors consistent across an entire wafer. Some of the best R&D minds in the semiconductor industry are working on those issues here at Texas Instruments. We will resolve these new challenges, just as we have resolved scaling issues for many generations of high-performance processes.

In addition to process controls, new materials also help drive leading-edge transistor technology. Equivalent gate oxides of 1 nm or less will require new high-K dielectrics to replace traditional silicon oxides. Hafnium-based materials that offer the thermal stability and workability necessary for gate dielectrics on this scale will help us as we build the next generation of transistors.

The electrical characteristics of deep-submicron transistors bring new challenges to design, not only for process R&D, but also at the system level. In order to get the necessary performance below 1 volt, we must confront issues that result from shallow junctions and raised-source drains. These issues demand extremely strict process controls. The higher quiescent currents of transistors at this scale will require extensive system expertise. TI has developed businesses that closely couple products like the OMAP wireless architecture with the underlying process for maximum power efficiency and technical optimization.

While much of our R&D is currently focused on implementing transistors at the 90-nm node, we are also devoting resources to studying transistor design at 65 nm and beyond. Future changes in the transistor structure at smaller nodes may involve new techniques such as leveraging device strain to improve drive current. The physics of future generations of transistors may seem daunting at this point, but TI has been among the leaders in resolving the physical challenges of previous process generations, and we will continue to play an important role in advancing future IC technology.