транзистор IRLZ34N
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PD - 9.1307B
IRLZ34N
HEXFET® Power MOSFET
lLogic-Level Gate Drive
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
G
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
D
VDSS = 55V
RDS(on) = 0.035Ω
S ID = 30A
TO-220AB |
Absolute Maximum Ratings
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Parameter |
Max. |
Units |
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ID @ TC = 25°C |
Continuous Drain Current, V GS @ 10V |
30 |
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ID @ TC = 100°C |
Continuous Drain Current, V GS @ 10V |
21 |
A |
IDM |
Pulsed Drain Current ĥ |
110 |
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PD @TC = 25°C |
Power Dissipation |
68 |
W |
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Linear Derating Factor |
0.45 |
W/°C |
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VGS |
Gate-to-Source Voltage |
±16 |
V |
EAS |
Single Pulse Avalanche Energy ‚ |
110 |
mJ |
IAR |
Avalanche Current• |
16 |
A |
EAR |
Repetitive Avalanche Energy• |
6.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt ƒ |
5.0 |
V/ns |
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TJ |
Operating Junction and |
-55 to + 175 |
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TSTG |
Storage Temperature Range |
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°C |
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Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
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Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
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Thermal Resistance
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Parameter |
Min. |
Typ. |
Max. |
Units |
RθJC |
Junction-to-Case |
–––– |
–––– |
2.2 |
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RθCS |
Case-to-Sink, Flat, Greased Surface |
–––– |
0.50 |
–––– |
°C/W |
RθJA |
Junction-to-Ambient |
–––– |
–––– |
62 |
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8/25/97
IRLZ34N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
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Parameter |
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Min. |
Typ. |
Max. |
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Units |
Conditions |
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V(BR)DSS |
Drain-to-Source Breakdown Voltage |
55 |
––– |
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––– |
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V |
VGS = 0V, ID = 250µA |
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V(BR)DSS/ TJ |
Breakdown Voltage Temp. Coefficient |
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––– |
0.065 |
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––– |
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V/°C |
Reference to 25°C, I D = 1mA |
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––– |
––– |
0.035 |
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VGS = 10V, ID = 16A „ |
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RDS(on) |
Static Drain-to-Source On-Resistance |
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––– |
––– |
0.046 |
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Ω |
VGS = 5.0V, ID = 16A „ |
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––– |
––– |
0.060 |
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VGS = 4.0V, ID = 14A „ |
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VGS(th) |
Gate Threshold Voltage |
1.0 |
––– |
2.0 |
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V |
VDS = VGS, ID = 250µA |
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gfs |
Forward Transconductance |
11 |
––– |
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––– |
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S |
VDS = 25V, ID = 16A |
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IDSS |
Drain-to-Source Leakage Current |
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––– |
––– |
25 |
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µA |
VDS = 55V, VGS = 0V |
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––– |
––– |
250 |
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VDS = 44V, VGS = 0V, TJ = 150°C |
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IGSS |
Gate-to-Source Forward Leakage |
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––– |
––– |
100 |
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nA |
VGS = 16V |
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Gate-to-Source Reverse Leakage |
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––– |
––– |
-100 |
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VGS = -16V |
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Qg |
Total Gate Charge |
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––– |
––– |
25 |
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ID = 16A |
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Qgs |
Gate-to-Source Charge |
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––– |
––– |
5.2 |
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nC |
VDS = 44V |
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Qgd |
Gate-to-Drain ("Miller") Charge |
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––– |
––– |
14 |
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VGS = 5.0V, See Fig. 6 and 13 „ |
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td(on) |
Turn-On Delay Time |
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––– |
8.9 |
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––– |
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VDD = 28V |
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tr |
Rise Time |
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––– |
100 |
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––– |
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ns |
ID = 16A |
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td(off) |
Turn-Off Delay Time |
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––– |
21 |
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––– |
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RG = 6.5Ω, VGS = 5.0V |
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tf |
Fall Time |
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29 |
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RD = 1.8Ω, See Fig. 10 „ |
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––– |
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––– |
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LD |
Internal Drain Inductance |
––– |
4.5 |
––– |
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Between lead, |
D |
nH |
6mm (0.25in.) |
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from package |
G |
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LS |
Internal Source Inductance |
––– |
7.5 |
––– |
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and center of die contact |
S |
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Ciss |
Input Capacitance |
––– |
880 |
––– |
VGS = 0V |
Coss |
Output Capacitance |
––– |
220 |
––– |
pF VDS = 25V |
Crss |
Reverse Transfer Capacitance |
––– |
94 |
––– |
ƒ = 1.0MHz, See Fig. 5 |
Source-Drain Ratings and Characteristics
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Parameter |
Min. |
Typ. Max. |
Units |
Conditions |
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IS |
Continuous Source Current |
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MOSFET symbol |
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D |
––– |
––– |
30 |
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(Body Diode) |
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showing the |
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A |
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ISM |
Pulsed Source Current |
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integral reverse |
G |
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––– |
––– |
110 |
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(Body Diode) • |
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p-n junction diode. |
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S |
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VSD |
Diode Forward Voltage |
––– |
––– |
1.3 |
V |
TJ = 25°C, I S = 16A, VGS = 0V „ |
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trr |
Reverse Recovery Time |
––– |
76 |
110 |
ns |
TJ = 25°C, I F = 16A |
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Qrr |
Reverse RecoveryCharge |
––– |
190 |
290 |
nC |
di/dt = 100A/µs „ |
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ton |
Forward Turn-On Time |
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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Notes: |
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• Repetitive rating; pulse width limited by |
ƒ ISD ≤ 16A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, |
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max. junction temperature. ( See fig. 11 ) |
TJ ≤ 175°C |
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‚ VDD = 25V, starting TJ = 25°C, L = 610µH |
„ Pulse width ≤ 300µs; duty cycle ≤ 2%. |
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RG = 25Ω, IAS = 16A. (See Figure 12) |
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IRLZ34N |
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1000 |
VGS |
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1000 |
VGS |
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TOP |
15V |
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TOP |
15V |
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12V |
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12V |
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10V |
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10V |
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) |
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8.0V |
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) |
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8.0V |
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A |
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6.0V |
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A |
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6.0V |
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4.0V |
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4.0V |
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nt |
100 |
3.0V |
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nt |
100 |
3.0V |
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C u r r e |
BOT TOM |
2.5V |
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C u r r e |
BOTT OM |
2.5V |
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u r ce |
10 |
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u r ce |
10 |
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-to - S o |
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-to - S o |
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2 .5V |
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D r a in |
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D r a in |
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1 |
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2.5V |
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, |
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D |
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D |
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I |
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I |
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20µs PULSE W IDTH |
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20µs PULSE W IDTH |
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0.1 |
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T J = 25°C |
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0.1 |
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T J = 175°C |
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0.1 |
1 |
10 |
100 |
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0.1 |
1 |
10 |
100 |
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VD S , Drain-to-Source Voltage (V) |
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VD S , Drain-to-Source Voltage (V) |
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Fig 1. Typical Output Characteristics |
Fig 2. Typical Output Characteristics |
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1 0 0 0 |
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nt (A ) |
1 0 0 |
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C urre |
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TJ = 25°C |
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TJ = 17 5°C |
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e |
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r ain - to -S ourc |
1 0 |
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1 |
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, D |
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D |
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I |
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V DS = 25V |
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0 . 1 |
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20µs P UL SE W ID TH |
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2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
1 0 |
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V G S , Ga te-to-So urce Voltage (V ) |
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Fig 3. Typical Transfer Characteristics
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3 . 0 |
= 27A |
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sta n ce |
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ID |
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2 . 5 |
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R e si |
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O n |
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2 . 0 |
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u r c e |
ze d ) |
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li |
1 . 5 |
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-to -S |
o rm a |
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a in |
( N |
1 . 0 |
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r |
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D |
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n ) |
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0 . 5 |
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D S (o |
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R |
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V GS = 10V |
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0 . 0 |
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- 6 0 - 4 0 - 2 0 |
0 |
2 0 4 0 |
6 0 |
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 |
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TJ |
, Junction Temperature (°C) |
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Fig 4. Normalized On-Resistance
Vs. Temperature
IRLZ34N |
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1400 |
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V GS = 0V , |
f = 1MH z |
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15 |
I D = 16A |
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C is s = Cgs |
+ Cg d , Cds |
SHORTED |
) |
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1200 |
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C rs s = Cg d |
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VDS |
= 44V |
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C iss |
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e (V |
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C os s = Cds |
+ C gd |
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12 |
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VDS |
= 28V |
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g |
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p F ) |
1000 |
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o lta |
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V |
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n c e |
800 |
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r ce |
9 |
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ita |
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C o ss |
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o u |
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a c |
600 |
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- S |
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a p |
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- to |
6 |
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C , |
400 |
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G a |
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C rss |
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G S |
3 |
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200 |
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V |
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FO R TEST CIRCUIT |
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0 |
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0 |
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SEE FIG URE 13 |
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1 |
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10 |
100 |
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0 |
4 |
8 |
12 |
16 |
20 |
24 |
28 |
32 |
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V D S , Drain-to-Source Voltage (V) |
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Q G , Total Gate C harge (nC ) |
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Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
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1 0 0 0 |
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u rr e n t ( A ) |
1 0 0 |
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C |
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D r a in |
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TJ = 175°C |
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v e r se |
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TJ = 25°C |
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e |
1 0 |
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R |
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S D |
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I |
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1 |
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VGS = 0V |
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0 . 4 |
0 . 6 |
0 . 8 |
1 . 0 |
1 . 2 |
1 . 4 |
1 . 6 |
1 . 8 |
2 . 0 |
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V S D , Source-to-Drain Voltage (V) |
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPE RATIO N IN THIS A RE A LIMITE D
BY RD S(o n)
t (A ) |
100 |
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r e n |
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10µ s |
C u r |
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r a in |
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1 00µs |
, D |
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10 |
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D |
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I |
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1m s |
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TC |
= 25°C |
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TJ |
= 175°C |
10m s |
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S ing le Pulse |
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1 |
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1 |
10 |
100 |
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode |
Fig 8. Maximum Safe Operating Area |
Forward Voltage |
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IRLZ34N |
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40 |
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VDS |
RD |
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VGS |
D.U.T. |
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RG |
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(A) |
30 |
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+-VDD |
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Current |
20 |
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Pulse Width ≤ 1 µs |
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Drain, |
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5.0V |
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Duty Factor ≤ 0.1 % |
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D |
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Fig 10a. Switching Time Test Circuit |
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10 |
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VDS |
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90% |
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0 |
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25 |
50 |
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75 |
100 |
125 |
150 |
175 |
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T |
C |
, Case Temperature |
( ° C) |
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Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on) |
tr |
td(off) tf |
Fig 10b. Switching Time Waveforms
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10 |
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) |
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thJC |
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D = 0.50 |
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(Z |
1 |
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Response |
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0.20 |
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0.10 |
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0.05 |
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PDM |
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Thermal |
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0.1 |
0.02 |
SINGLE PULSE |
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t1 |
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0.01 |
(THERMAL RESPONSE) |
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t2 |
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Notes: |
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1. Duty factor D = |
t1 / t 2 |
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0.01 |
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2. Peak T J = P DM x Z thJC |
+ TC |
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0.00001 |
0.0001 |
0.001 |
0.01 |
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t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLZ34N
L
VDS 
D.U.T.
RG |
+ |
- VDD
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5.0 V |
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IAS |
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tp |
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0.01Ω |
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Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
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QG |
5.0 V |
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QGS |
QGD |
VG |
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Charge |
Fig 13a. Basic Gate Charge Waveform
m J) |
250 |
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I D |
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TOP |
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6 .6A |
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y ( |
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11A |
r g |
200 |
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BO TTOM |
16A |
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E n e |
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n c h e |
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A va la |
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ls e |
100 |
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P u |
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S in g le |
50 |
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A S |
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VD D = 25V |
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E |
0 |
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25 |
50 |
75 |
100 |
125 |
150 |
175 |
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Starting TJ , Junction Temperature (°C) |
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V 
.2μF
.3μF
+
D.U.T. -VDS
VGS 
3mA
IG 
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRLZ34N
Peak Diode Recovery dv/dt Test Circuit
+ |
Circuit Layout Considerations |
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D.U.T |
∙ |
Low Stray Inductance |
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ƒ |
∙ |
Ground Plane |
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∙ |
Low Leakage Inductance |
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Current Transformer |
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‚ |
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„ + |
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•
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RG |
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∙ |
dv/dt controlled by R |
+ |
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∙ |
G |
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Driver same type as D.U.T. |
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- VDD |
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∙ |
ISD controlled by Duty Factor "D" |
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∙ |
D.U.T. - Device Under Test |
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Driver Gate Drive |
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P.W. |
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Period |
D = |
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P.W. |
Period |
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VGS=10V * |
D.U.T. ISD Waveform |
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Reverse |
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Recovery |
Body Diode Forward |
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Current |
Current |
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di/dt |
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D.U.T. VDS Waveform |
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Diode Recovery |
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dv/dt |
VDD |
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Re-Applied |
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Voltage |
Body Diode |
Forward Drop |
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Inductor Curent |
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Ripple ≤ 5% |
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ISD |
* VGS = 5V for Logic Level Devices |
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Fig 14. For N-Channel HEXFETS
IRLZ34N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
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1 0 .5 4 |
(.41 5) |
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3 .7 8 |
(.14 9) |
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2 .8 7 |
( .1 13 ) |
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1 0 .2 9 |
(.40 5) |
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3 .5 4 |
(.13 9) |
4 .6 9 |
( .1 85 ) |
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2 .6 2 |
( .1 03 ) |
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- A - |
4 .2 0 |
( .1 65 ) |
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6 .4 7 |
(.25 5) |
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4 |
6 .1 0 |
(.24 0) |
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1 5 .2 4 |
( .6 0 0) |
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1 4 .8 4 |
( .5 8 4) |
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1 .1 |
5 ( .0 4 5) |
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M IN |
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1 |
2 |
3 |
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1 4 .0 9 |
(.5 5 5) |
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4 . |
0 6 |
(.16 0) |
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1 3 .4 7 |
(.5 3 0) |
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3 . |
5 5 |
(.14 0) |
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3X |
0 .9 3 |
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( .0 37 ) |
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1 .4 0 |
(.05 5 ) |
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0 .6 9 |
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( .0 27 ) |
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3 X |
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1 .1 5 (.04 5 ) |
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0 .3 6 (.01 4 ) |
M |
B A M |
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2 .5 4 ( .1 00 ) |
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- B - |
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1 .3 2 |
(.0 52 ) |
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1 .2 2 |
(.0 48 ) |
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L E A D A S S IG N M E N T S |
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1 |
- G A T E |
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2 |
- D R A IN |
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3 |
- S O U R C E |
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4 |
- D R A IN |
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3X |
0 .5 5 |
(.02 2) |
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0 .4 6 |
(.01 8) |
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2 .9 2 |
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(.11 5 ) |
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2 .6 4 |
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(.10 4 ) |
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2X |
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N O T E S : |
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1 |
D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 98 2 . |
3 |
O U T L IN E C O N F O R M S T O J E D E C O U T LIN E T O -2 20 A B . |
2 |
C O N T R O L LIN G D IM E N S IO N : IN C H |
4 |
H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . |
Part Marking Information
TO-220AB
EXAM PL E : TH IS IS A N IRF1 010 |
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W ITH ASSEMBLY |
INTERNATIO NAL |
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A |
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L OT CO DE 9 B1M |
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PAR T NUM BER |
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RECTIFIER |
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IRF 10 10 |
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||||||||
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LOG O |
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9246 |
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9B |
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1 M |
DA TE COD E |
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ASSEMBLY |
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(YYW W ) |
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LOT CODE |
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YY = |
YEAR |
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W W |
= W EEK |
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WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) |
322 3331 |
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 |
|
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) |
475 1897 |
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 |
|
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 |
451 0111 |
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 |
|
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 |
|
http://www.irf.com/ Data and specifications subject to change without notice. |
8/97 |