belyaev_a_e_konakova_r_v_red_karbid_kremniya_tehnologiya_svo

384 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ǾȖȟ. 1.6. ǽȞȜȢȖșȖ ȞȎȟȝȞȓȒȓșȓțȖȭ ȘȜȚȝȜțȓțȠȜȐ Ȑ ȘȜțȠȎȘȠȎȣ

Mo/3C-SiC (Ȏ) ȖMo/6H-SiC (ȏ) ȝȜȟ-

șȓ ȠȓȞȚȜȜȏȞȎȏȜȠȘȖ ȝȞȖ 1200°ǿ Ȑ ȠȓȥȓțȖȖ 1 ȥȎȟȎ, ȝȜșȡȥȓțțȩȓ ȚȓȠȜȒȜȚ ȋǼǿ [62]

ǻȓ ȏȩșȜ ȜȠȚȓȥȓțȜ ȟȡȧȓȟȠȐȓțțȩȣ ȜȠșȖȥȖȗ Ȑ ȢȎȕȜȐȜȚ ȟȜȟȠȎȐȓ Ȗ ȝȞȜȠȭȔȓțțȜȟȠȖ ǽǿ Ȑ ȘȜțȠȎȘȠȎȣ Mo-SiC, ȟȢȜȞȚȖȞȜȐȎțțȩȣ ȞȎȕșȖȥțȩȚȖ ȚȓȠȜȒȎȚȖ (ȞȓȕȖȟȠȖȐțȜȓ ȖșȖ ȚȎȑțȓȠȞȜțțȜȓ țȎȝȩșȓțȖȓ).

ȂȎȕȜȜȏȞȎȕȜȐȎțȖȓ ȝȞȖ ȠȓȞȚȜȜȏȞȎȏȜȠȘȓ ȟȠȞȡȘȠȡȞ Ta-SiC, ȜȝȖȟȩȐȎȓȠȟȭ ȏȜșȓȓ ȟșȜȔțȜȗ, ȥȓȚ Ȑ ȟșȡȥȎȓ W(Mo)-SiC ȘȜțȠȎȘȠȜȐ, ȢȎȕȜȐȜȗ ȒȖȎȑȞȎȚȚȜȗ[56] (ȞȖȟ. 1.7). dzȮȜȠșȖȥȖȠȓșȪțȜȗȜȟȜȏȓțțȜȟȠȪȬȭȐșȭȓȠȟȭ ȐȜȕȚȜȔțȜȟȠȪȜȏȞȎȕȜȐȎțȖȭȠȓȞțȎȞțȜȗȢȎȕȩTa5Si3C, ȘȜȠȜȞȎȭ, țȎȞȭȒȡ ȟ ƚƨ Ȗ ƚƨSi2, ȭȐșȭȓȠȟȭ ȟȠȎȏȖșȪțȜȗ ȝȜ ȜȠțȜȦȓțȖȬ Ș SiC.

ǻȎȖȏȜșȓȓ ȝȜȒȞȜȏțȜ ȖȕȡȥȓțȜ ȢȎȕȜȜȏȞȎȕȜȐȎțȖȓ Ȑ ȟȠȞȡȘȠȡȞȎȣ Ta-3C-SiC. ǰ ȠȎȏș. 1.6 ȝȞȓȒȟȠȎȐșȓțȩȒȎțțȩȓȝȜȢȜȞȚȖȞȜȐȎțȖȬȟȠȞȡȘȠȡȞȩ ȘȜțȠȎȘȠȎ Ta-3C-SiC Ȑ ȕȎȐȖȟȖȚȜȟȠȖ ȜȠ ȞȓȔȖȚȎ ȜȠȔȖȑȎ [63].

ǰȎȔțȜȜȠȚȓȠȖȠȪ, ȥȠȜȐȜȕțȖȘȎȬȧȖȓȐȝȞȜȤȓȟȟȓȜȠȔȖȑȎȝȜșȖȘȞȖȟȠȎșșȖȥȓȟȘȖȓ ȟșȜȖ ȟȜȓȒȖțȓțȖȗ ƚƨ ȜȠșȖȥȎȬȠȟȭ ȝȜ ȚȜȞȢȜșȜȑȖȥȓȟȘȖȚ ȝȎȞȎȚȓȠȞȎȚ, ȘȞȜȚȓ ȠȜȑȜ, Ȗȣ ȜȠșȖȥȖȠȓșȪțȜȗ ȜȟȜȏȓțțȜȟȠȪȬ ȭȐșȭȓȠȟȭ țȎșȖȥȖȓ ȝȜȞ, ȒȖȎȚȓȠȞ ȘȜȠȜȞȩȣ ȕȎȐȖȟȖȠ ȜȠ ȠȓȚȝȓȞȎȠȡȞȩ ȜȠȔȖȑȎ.

ǾȖȟ. 1.7. ǶȕȜȠȓȞȚȖȥȓȟȘȜȓ ȟȓȥȓțȖȓ ȠȞȜȗțȜȗ ȢȎȕȜȐȜȗ ȒȖȎȑȞȎȚȚȩ ȟȖȟȠȓȚȩ Ta-Si-C ȝȞȖ ȠȓȚȝȓ-

ȞȎȠȡȞȓ 1000°ǿ [56]

DzșȭȟȠȞȡȘȠȡȞȩCr-SiC ȖȕȜȠȓȞȚȖȥȓȟȘȜȓȟȓȥȓțȖȓȠȞȜȗțȜȗȢȎȕȜȐȜȗ ȒȖȎȑȞȎȚȚȩ, ȠȎȘȔȓȘȎȘȖȐȟșȡȥȎȓTa-SiC, ȡȘȎȕȩȐȎȓȠțȎȜȏȞȎȕȜȐȎțȖȓ ȠȓȞțȎȞțȜȗȢȎȕȩȝȞȖțȎȑȞȓȐȓCr5Si3ƙ[56]. ǽȜȚȖȚȜCr5Si3C ȢȎȕȩ, ȝȞȖ țȎȑȞȓȐȓ Ȑ ȞȎȐțȜȐȓȟțȩȣ ȡȟșȜȐȖȭȣ ȐȜȕțȖȘȎȬȠ ȢȎȕȩ CrSi, CrSi2, Cr3C2, țȓ ȐȕȎȖȚȜȒȓȗȟȠȐȡȬȧȖȓ ȟ SiC ȝȞȖ țȎȑȞȓȐȓ ȒȜ 1000°ǿ.

ȃȞȜȚ, ȠȎȘ Ȕȓ ȘȎȘ Ȗ ȒȞȡȑȖȓ ȚȓȠȎșșȩ Ȗȕ ȎțȎșȖȕȖȞȡȓȚȜȗ ȑȞȡȝȝȩ, ȢȜȞȚȖȞȡȓȠ ȚțȜȑȜȟșȜȗțȡȬ ȝȓȞȓȣȜȒțȡȬ ȜȏșȎȟȠȪ, ȟȜȟȠȜȭȧȡȬ Ȗȕ ȝȞȜȒȡȘȠȜȐ ȓȑȜ ȞȓȎȘȤȖȖ ȟ ȘȜȚȝȜțȓțȠȎȚȖ ȝȜșȡȝȞȜȐȜȒțȖȘȎ.

ǻȎ ȝȞȎȘȠȖȘȓ ȟȠȞȡȘȠȡȞȩ ȟ ȚȜțȜȟșȜȗțȜȗ ȚȓȠȎșșȖȕȎȤȖȓȗ țȓ ȖȟȝȜșȪȕȡȬȠȟȭ, Ƞ. Ș. ȜțȖ țȓ ȜȠȐȓȥȎȬȠ ȟșȜȔțȜȚȡ Ȗ ȝȞȜȠȖȐȜȞȓȥȖȐȜȚȡ ȘȜȚȝșȓȘȟȡ ȠȞȓȏȜȐȎțȖȗ, ȝȞȓȒȨȭȐșȭȓȚȩȣ Ș ȘȜțȠȎȘȠȎȚ ȝȞȖȏȜȞțȩȣ ȟȠȞȡȘȠȡȞ. ǽȜȫȠȜȚȡ ȖȟȝȜșȪȕȡȬȠ ȟȠȞȡȘȠȡȞȩ ȟ ȚțȜȑȜȟșȜȗțȜȗ ȚȓȠȎșșȖȕȎȤȖȓȗ. ǰ ȞȭȒȓ ȟșȡȥȎȓȐ, ȖȟȝȜșȪȕȡȭ ȞȎȕțȩȓ ȘȜȚȏȖțȎȤȖȖ ȟșȜȓȐ

ȀȎȏșȖȤȎ 1.6. ȂȎȕȜȜȏȞȎȕȜȐȎțȖȓ Ȑ ȟȖȟȠȓȚȓ Ta/3C-SiC ȝȜȟșȓ ȠȓȞȚȜȜȏȞȎȏȜȠȘȖ Ȑ ȐȎȘȡȡȚȓ [63]

386 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ȠȡȑȜȝșȎȐȘȖȣȚȓȠȎșșȜȐ, ȡȒȎȓȠȟȭȝȜȐȩȟȖȠȪȠȓȞȚȖȥȓȟȘȡȬȟȠȎȏȖșȪțȜȟȠȪ ȘȜțȠȎȘȠțȜȗ ȟȠȞȡȘȠȡȞȩ.

dzȧȓ ȜȒȖț ȝȡȠȪ ȝȜȐȩȦȓțȖȭ ȠȓȞȚȖȥȓȟȘȜȗ ȟȠȎȏȖșȪțȜȟȠȖ ȚȓȠȎșșȖȕȎȤȖȖ ȕȎȘșȬȥȎȓȠȟȭ Ȑ ȡȟȠȞȎțȓțȖȖ ȒȐȖȔȡȧȖȣ ȟȖș, ȜȠȐȓȠȟȠȐȓțțȩȣ ȕȎ ȐțȡȠȞȓțțȖȓ ȟȠȞȡȘȠȡȞțȜ-ȣȖȚȖȥȓȟȘȖȓ ȝȓȞȓȟȠȞȜȗȘȖ, șȖȏȜ ȞȓȕȘȜȚ ȕȎȚȓȒșȓțȖȖ Ȗȣ ȝȞȜȠȓȘȎțȖȭ. ǰ [64] ȫȠȎ ȕȎȒȎȥȎ ȞȓȦȎșȎȟȪ ȝȡȠȓȚ ȐȘșȬȥȓțȖȭ Ȑ ȟȜȟȠȎȐ ȘȜțȠȎȘȠȎ ȟșȜȭ ȟȖșȖȤȖȒȎ, ȜȏȜȑȎȧȓțțȜȑȜ ȘȞȓȚțȖȓȚ, TaSi2. ȍȐșȭȭȟȪ ȣȖȚȖȥȓȟȘȖ ȖțȓȞȠțȩȚ ȝȜ ȜȠțȜȦȓțȖȬ Ș SiC, Ȑ ȠȜ Ȕȓ ȐȞȓȚȭ TaSi2 ȖȚȓȓȠ ȚȓșȘȜȘȞȖȟȠȎșșȖȥȓȟȘȡȬ ȟȠȞȡȘȠȡȞȡ, țȓ ȝȞȓȒȜȠȐȞȎȧȎȬȧȡȬȒȖȢȢȡȕȖȬȎȠȜȚȜȐȚȓȠȎșșȎ, ȖȟȝȜșțȭȬȧȖȣȞȜșȪ ȠȓȣțȜșȜȑȖȥȓȟȘȖȣȟșȜȓȐ. ǰȩȣȜȒȜȚȖȕȟȜȕȒȎȐȦȓȗȟȭȟȖȠȡȎȤȖȖȭȐșȭȓȠȟȭ ȐȘșȬȥȓțȖȓ Ȑ ȟȠȞȡȘȠȡȞȡ ȘȜțȠȎȘȠȜȐ ȠȞȓȣȘȜȚȝȜțȓțȠțȩȣ ȎȚȜȞȢțȩȣ ȝșȓțȜȘ ȠȖȝȎ (Ta, Ti, Mo, W)-Si-N.

ǮȚȜȞȢțȩȓȒȖȢȢȡȕȖȜțțȩȓ ȏȎȞȪȓȞȩȭȐșȭȬȠȟȭȝȓȞȟȝȓȘȠȖȐțȩȚȖ Ȓșȭ ȟȜȕȒȎțȖȭ ȐȩȟȜȘȜȠȓȚȝȓȞȎȠȡȞțȜȗ ȚȓȠȎșșȖȕȎȤȖȖ, Ƞ. Ș. Ȑ țȖȣ ȜȠȟȡȠȟȠȐȡȬȠ ȒȓȢȓȘȠȩ, ȜȏȓȟȝȓȥȖȐȎȬȧȖȓ ȡȟȠȜȗȥȖȐȩȓ ȒȖȢȢȡȕȖȜțțȩȓ ȝȡȠȖ, ȘȎȘ ȫȠȜ ȖȚȓȓȠ ȚȓȟȠȜ Ȑ ȝȜșȖȘȞȖȟȠȎșșȖȥȓȟȘȖȣ ȚȎȠȓȞȖȎșȎȣ.

ǰȩȟȜȠȎ ȏȎȞȪȓȞȎ Ȑ ȟȠȞȡȘȠȡȞȎȣ Au-Ta20Si40N40-TaSi2-6H-SiC țȓ ȖȕȚȓțȭșȎȟȪ ȐȝșȜȠȪ ȒȜ ȠȓȚȝȓȞȎȠȡȞ ȜȠȔȖȑȎ 1000 K (30 ȚȖț.) DzȎțțȩȓ

ȜȏȞȎȠțȜȑȜ ȞȎȟȟȓȭțȖȭ 2 Țȫǰ 4ƕ+ ȠȎȘȔȓ ȝȜȒȠȐȓȞȔȒȎșȖ ȜȠȟȡȠȟȠȐȖȓ ȐȕȎȖȚȜȒȓȗȟȠȐȖȭȚȓȔȒȡȘȜțȠȎȘȠȖȞȡȬȧȖȚȖȟșȜȭȚȖȝȞȖȜȠȚȓȥȓțțȩȣ ȡȟșȜȐȖȭȣ ȜȠȔȖȑȎ [63].

ǼȒțȎȘȜ ȖȟȘșȬȥȓțȖȓ Ȗȕ ȟȜȟȠȎȐȎ ȚȓȠȎșșȖȕȎȤȖȖ ȟșȜȭ TaSi2 ȞȓȕȘȜ ȡȣȡȒȦȎȓȠ ȠȓȞȚȜȟȠȎȏȖșȪțȜȟȠȪ Ȗ ȏȎȞȪȓȞțȩȓ ȟȐȜȗȟȠȐȎ ȘȜțȠȎȘȠȎ ȐȟșȓȒȟȠȐȖȓ ȒȖȢȢȡȕȖȖ ȎȠȜȚȜȐȎȕȜȠȎȐȝȜșȡȝȞȜȐȜȒțȖȘ, ȥȠȜȝȞȖȐȜȒȖȠ Ș ȞȜȟȠȡ ȘȜțȤȓțȠȞȎȤȖȖ șȓȑȖȞȡȬȧȖȣ ȝȞȖȚȓȟȓȗ.

ǼȠȚȓȥȓțțȩȣ țȓȒȜȟȠȎȠȘȜȐ șȖȦȓțȩ ȟȖȟȠȓȚȩ ȚȓȠȎșșȖȕȎȤȖȖ țȎ ȜȟțȜȐȓ ȏȜȞȖȒȜȐ ȠȡȑȜȝșȎȐȘȖȣ ȚȓȠȎșșȜȐ [65–93]. ǯșȎȑȜȒȎȞȭ ȟȝȓȤȖȢȖȘȓ ȣȖȚȖȥȓȟȘȖȣȟȐȭȕȓȗȐȫȠȖȣȟȜȓȒȖțȓțȖȭȣ, ȜțȖȟȜȥȓȠȎȬȠȟȐȜȗȟȠȐȎȐȓȧȓȟȠȐ ȟȘȜȐȎșȓțȠțȩȚȖȟȐȭȕȭȚȖ(ȐȩȟȜȘȡȬȠȓȚȝȓȞȎȠȡȞȡȝșȎȐșȓțȖȭ, ȠȐȓȞȒȜȟȠȪ, ȠȓȞȚȜȟȠȎȏȖșȪțȜȟȠȪ) Ȗ Ȑ ȠȜ Ȕȓ ȐȞȓȚȭ ȝȜ ȫșȓȘȠȞȖȥȓȟȘȖȚ Ȗ ȜȝȠȖȥȓȟȘȖȚ ȟȐȜȗȟȠȐȎȚ ȝȞȖȏșȖȔȎȬȠȟȭ Ș ȐȓȧȓȟȠȐȎȚ ȟ ȚȓȠȎșșȖȥȓȟȘȜȗ ȟȐȭȕȪȬ.

ǯșȎȑȜȒȎȞȭ ȠȎȘȜȚȡ ȟȜȥȓȠȎțȖȬ ȢȖȕȖȥȓȟȘȖȣ ȟȐȜȗȟȠȐ, ȫȠȖ ȚȎȠȓȞȖȎșȩ ȐȩȕȩȐȎȬȠ ȝȜȐȩȦȓțțȩȗ ȖțȠȓȞȓȟ ȝȞȖ ȖȟȝȜșȪȕȜȐȎțȖȖ Ȗȣ Ȑ ȟȖȟȠȓȚȎȣ ȘȜțȠȎȘȠțȜȗ ȚȓȠȎșșȖȕȎȤȖȖ SiC.

ǽȜȞȜȑ ȠȓȞȚȖȥȓȟȘȜȗ ȟȠȎȏȖșȪțȜȟȠȖ Ȓșȭ ȟȠȞȡȘȠȡȞȩ ZrBx-n-6H-SiC ȝȞȓȐȩȦȎȓȠ 1000 K. ǽȞȖ ȫȠȜȚ ȟȜȣȞȎțȭȬȠȟȭ ȓȓ ȫșȓȘȠȞȜȢȖȕȖȥȓȟȘȖȓ ȝȎȞȎȚȓȠȞȩ.

ǾȖȟ. 1.8. ǽȞȜȢȖșȖ ȞȎȟȝȞȓȒȓșȓțȖȭ ȘȜȚȝȜțȓțȠȜȐ Ȑ ȘȜțȠȎȘȠȓ

TiBx-n-6H-SiC (0001) ȒȜ (a) Ȗ ȝȜȟ-

șȓ ǯȀǼ ȝȞȖ Ȁ= 1000°ǿ (ȏ) [66]

DzșȭȟȠȞȡȘȠȡȞTiBx-n-6H-SiC (0001) ȠȓȞȚȜȟȠȎȏȖșȪțȜȟȠȪȜȘȎȕȎșȎȟȪ ȓȧȓȐȩȦȓ(.1300 K). ǸȎȘȝȜȘȎȕȎșȖȖȟȟșȓȒȜȐȎțȖȭ, ȐȩȝȜșțȓțțȩȓțȎ ȫȠȖȣȘȜțȠȎȘȠȎȣȟȖȟȝȜșȪȕȜȐȎțȖȓȚǼȋǿ(ȞȖȟ. 1.8) ȖȞȓțȠȑȓțȜȢȎȕțȜȑȜ ȎțȎșȖȕȎ, ȖȟȣȜȒțȩȓ țȎțȜȟȠȞȡȘȠȡȞȖȞȜȐȎțțȩȓ ȟșȜȖ TiBƽ ȝȞȖ ȜȠȚȓȥȓțțȜȗ ȠȓȚȝȓȞȎȠȡȞȓ ȜȠȔȖȑȎ ȟȜȣȞȎțȭșȖ ȟȐȜȬ ȟȠȞȡȘȠȡȞȡ Ȗ ȢȎȕȜȐȩȗ ȟȜȟȠȎȐ, Ȏ ȣȖȚȖȥȓȟȘȖȓ ȐȕȎȖȚȜȒȓȗȟȠȐȖȭ ȚȓȔȒȡ ȝșȓțȘȜȗ TiBx Ȗ SiC ȟșȎȏȜ ȐȩȞȎȔȓțȩ.

388 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

ǹȖȠȓȞȎȠȡȞȎ

1.Cahn J.W., Hillard S.E. Free energy of nonuniform system // J.Chem. Phys. – 1958. – 28, N2. – P. 258–267.

2.Brillson L.S. Structure and properties of metall-semiconductor interfaces // Surf. Sci. Reports. – 1982. – 2, N2. – P. 125–326.

3.Mönch W. Semiconductor Surfaces. – Berlin: Springer, 1994. – 366 p.

4.ǯȓșȩȗ ǰ.Ƕ., ǯȓșȜȡȟȜȐ ǰ.Ǿ. ǿȐȜȗȟȠȐȎ ȝȜȐȓȞȣțȜȟȠȖ ȟȜȓȒȖțȓțȖȗ Ǯ3ǰ5 Ȗ ȢȖȕȖȘȜ-ȣȖȚȖȥȓȟȘȖȓ ȝȞȜȤȓȟȟȩ țȎ ȑȞȎțȖȤȓ ȞȎȕȒȓșȎ Ǯ3ǰ5-ȚȓȠȎșș // ǿȜȐȞȓȚȓțțȩȓ ȝȞȜȏșȓȚȩ ȢȖȕȖȥȓȟȘȜȗ ȣȖȚȖȖ ȝȜȐȓȞȣțȜȟȠȖ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐ / ǽȜȒ ȞȓȒ. ǾȔȎțȜȐȎ Ǯ.ǰ., ǾȓȝȖțȟȘȜȑȜ ǿ.Ǻ. – ǻȜȐȜȟȖȏȖȞȟȘ: ǻȎȡȘȎ, 1989. – C. 43–90.

5.ȅȓȏȜȠȖț ǰ.ǻ. ȂȖȕȖȥȓȟȘȎȭ ȣȖȚȖȭ ȠȐȓȞȒȜȑȜ ȠȓșȎ. – Ǻ.: ȃȖȚȖȭ, 1982. – 320 c.

6.ǯȓȣȦȠȓȒȠ Ȃ., ȋțȒȓȞșȎȗț Ǿ. ǽȜȐȓȞȣțȜȟȠȖ Ȗ ȑȞȎțȖȤȩ ȞȎȕȒȓșȎ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐ. – Ǻ.: ǺȖȞ, 1990. – 488 c.

7.ǰȓțȑȓȞ dz.Ȃ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȜȞȜȠȥȓțȘȜȐ DZ.ǿ., ǺȖșȓțȖț ǰ.ǰ., Ǿȡȟȟȡ ȋ.ǰ., ǽȞȜȘȜȝȓțȘȜ Ƕ.ǰ. ǺȓȔȢȎȕțȩȓ ȐȕȎȖȚȜȒȓȗȟȠȐȖȭ Ȗ ȚȓȣȎțȖȕȚȩ ȒȓȑȞȎȒȎȤȖȖ Ȑ ȟȠȞȡȘȠȡȞȎȣ ȚȓȠȎșș–InP Ȗ ȚȓȠȎșș–

GaAs. – Ǹ.: ǶǼ ǶȂǽ ǻǮǻ ȁȘȞȎȖțȩ, 1999. – 234 c.

8.Brillson L.S. Interface chemical reaction and diffusion of thin metal Àlms on semiconductors // Thin Solid Àlms. – 1982. – 89, N4. – P. 461–469.

9.Brillson L.S., Margaritondo G., Stoffel N.G. Measurement and odulation of atomic interdiffusion at Au-Al/GaAs (110) interfaces //J.Vac.Sci.Technol. – 1980. – 17, N 5. – P. 880–885.

10.ȀȞȓȠȪȭȘȜȐ Ȍ.Dz. ȀȐȓȞȒȜȢȎȕțȩȓ ȞȓȎȘȤȖȖ. – Ǻ.: ȃȖȚȖȭ, 1978. – 310 c.

11.Bozack M.J. Surface Studies on SiC as Related to contacts // Phys. Stat. Sol. (b). – 1997. – 202, N1. – P. 549–580.

12.Porter L.M., Davis R.F. A critical review of ohmic and rectifying contacts for silicon carbide // Mat. Sci. Eng. B. – 1995. – B 34, N2–3. – P. 83–105.

13.Properties of Silicon Carbide / Ed. G.L.Harris. London: INSPEC, 1995. – 282 p.

14.ǹȓȏȓȒȓȐ Ǯ.Ǯ., DzȎȐȩȒȜȐ Dz.ǰ., ǵȓșȓțȖț ǰ.ǰ., ǸȜȞȜȑȜȒȟȘȖȗ Ǻ.ǹ. ǶȟȟșȓȒȜȐȎțȖȓ ȐșȖȭțȖȭ ȜȏȞȎȏȜȠȘȖ ȝȜȐȓȞȣțȜȟȠȖ ȝȜșȡȝȞȜȐȜȒțȖȘȎ țȎ ȣȎȞȎȘȠȓȞȖȟȠȖȘȖ 6H-SiC ȒȖȜȒȜȐ ȆȜȠȠȘȖ // ȂȀǽ. – 1999. – 33, N8. – ǿ. 959–961.

15.ǮȑȓȓȐ Ǽ.Ǯ. ǽȞȜȏșȓȚȩ ȠȓȣțȜșȜȑȖȖ ȘȜțȠȎȘȠȜȐ Ș ȘȎȞȏȖȒȡ ȘȞȓȚ-

țȖȭ. – ȀȎȑȎțȞȜȑ: ȀǾȀȁ. – 2005. – 250 c.

16.Kaplan R. Surface structure and composition of C- and 6H-SiC // Surf. Sci. – 1989. – 215, N1/2. – P. 111–134.

17.Parrill T.M., Chung Y.W. Surface analysis of cubic silicon carbide (001) // Surf. Sci. – 1993. – 243, N1–3. – P. 96–112.

18.Hara S., Slijkerman W.F.J., J.F. van der Veen, Ohdomari I., Yohida S. Elemental composition of C-SiC (001) surface phases studied by medium energy ion scattering // Surf. Sci. – 1990. – 231, N3. – P. L196–L200.

19.Bermudez V.M., Kaplan R. Preparation and characterization of carbon-terminated C-SiC (001) surfaces // Phys. Rev. B. – 1991. – 44, N20. – P. 11146–11158.

20.Powers S.M., Wander A., Rous P.S., Van Hove M.A., Somorjai G.

A.Structural analysis of the C-SiC (001) c(2×2) surface reconstruction by automated tensor low-energy // Phys. Rev. B. – 1991. – 44, N20. – P. 11159–11169.

21.Dayan M. The C-SiC (001) surface studied by low energy electron diffraction, Auger electron spectroscopy and electron energy loss spectra // J. Vac. Sci. Tecnol. A. – 1986. – 4, N1. – P. 38–45.

22.Powers S.M., Wander A., Rous P.S., Van Hove M.A., Somorjai G.

A.Structural analysis of the E-SiC (001) c(2×1) surface reconstruction by automated tensor LED // Surf. Sci. – 1992. – 260, N1–3. – P. L7–L10.

390 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

23.Yoshinoben T., Izumikawa I., Mitsui H., Fuyuki T., Matsunami H. Dynamic reÁection high-energy electron diffraction obser-

vation of 3C-SiC (001) surface reconstruction under Si2H6 beam irradiation // Appl. Phys. Lett. 1991. V.59. N22. P.2844-2846.

24.Saxena A., Gawlinski E.T., Guntor J.D. Structural phase transitions on the Si (100) surface // Surf. Sci. – 1982. – 160, N2. –

P.618–640.

25.Tabuta T., Aruga T. Murata Y. Order-disorder transition on Si (001): C(4×2) to (2×1) // Surf. Sci. 1987. V.179. N1. P.L63-L70.

26.ǻȓȟȠȓȞȓțȘȜ ǯ.Ǯ., ǿțȖȠȘȜ Ǽ.ǰ. ȂȖȕȖȥȓȟȘȖȓ ȟȐȜȗȟȠȐȎ ȎȠȜȚȎȞ- țȜ-ȥȖȟȠȜȗ ȝȜȐȓȞȣțȜȟȠȖ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐ. – ǸȖȓȐ: ǻȎȡȘȜȐȎ ȒȡȚȘȎ, 1983. – 264 c.

27.Craig B.I., Smith P.V. The surface structure of C-SiC (001): the clean monohydride 2×1 phases // Surf. Sci. – 1990. – 233, N3. –

P.255–260.

28.Takai T., Halicio l. T., Tiller W.A. Reconstruction and energetics for surfaces of silicon, diamond and C-SiC // Surf. Sci. – 1985. – 164, N2/3. – P. 341–352.

29.Craig B.I., Smith P.V. The structure of the c(2×2) phase of the carbon terminated C-SiC (001) surface // Surf. Sci. – 1991. – 256, N1/2. – P. L609–L612.

30.Van Bommel A.J., Crombeen S.E., Van Tooreu A. LEED and Auger electron observations of the SiC (0001) surface // Surf. Sci. – 1975. – 48, N2. – P. 463–472.

31.Parrill T.M., Bezmudes V.M. Surface and bulk valence band photoemission of silicon carbide.// Solid-State Commun. – 1987. – 63. – P. 231–235.

32.Pelletier J., Gervais D., Pomot C. Application of wide-gap semiconductor to surface ionization: Work functions of AlN and SiC single crystals // J.Appl.Phys. – 1984. – 55, N4. – P. 994–1002.

33.Cardillo M.J., Becker G.E. Diffraction of the He atom at a Si (100) surface // Phys.Rev. Lett. – 1978. – 40, N10. – P. 1148–1152.

34.DzȎȐȩȒȜȐ ǿ.Ȍ., ǹȓȏȓȒȓȐ Ǯ.Ǯ., ȀȖȣȜțȜȐ ǿ.Ǹ. Ǹ ȞȎȟȥȓȠȡ ȐȩȟȜȠȩ ȏȎȞȪȓȞȎ ȆȜȠȠȘȖ țȎ țȎȥȎșȪțȜȗ ȟȠȎȒȖȖ ȢȜȞȚȖȞȜȐȎțȖȭ ȘȜțȠȎȘȠȎ ȘȎȞȏȖȒ ȘȞȓȚțȖȭ–ȟȡȏȚȜțȜȟșȜȗțȎȭ ȝșȓțȘȎ ȚȓȠȎșșȎ //

ȂȀǽ. – 1998. – 32, Ɋ1. – ǿ. 68–70.

35.Van Elsbergen V., Kampen T.U., Munch W. Electronic properties of caesium on 6H-SiC surfaces // J.Appl.Phys. – 1996. – 79, N1. – P. 316–321.

36.ǮțȒȞȓȓȐ Ǯ.ǻ., ǹȓȏȓȒȓȐ Ǯ.Ǯ., ǾȎȟȠȓȑȎȓȐȎ Ǻ.DZ., ǿțȓȑȜȐ Ȃ.Ǻ., ǿȩȞȘȖț Ǯ.ǹ., ȅȓșțȜȘȜȐ ǰ.dz., ȆȓȟȠȜȝȎșȜȐȎ ǹ.ǻ. ǰȩȟȜȠȎ ȏȎȞȪȓȞȎ Ȑ ȒȖȜȒȎȣ ȆȜȠȠȘȖ, ȟȢȜȞȚȖȞȜȐȎțțȩȣ țȎ ȜȟțȜȐȓ n-SiC-6H //

ȂȀǽ. – 1993. – 29, ǰ 10. – ǿ. 1833–1843.

37.ǮȐȞȎȚȓțȘȜ ǿ.Ȃ., ǰȓțȑȓȞ dz.Ȃ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȖȞȖșșȜȐȎ ǿ.Ƕ., ǽȞȖȚȎȥȓțȘȜ ǰ.dz., ȅȓȞțȜȏȎȗ ǰ.Ǯ. ǶȟȟșȓȒȜȐȎțȖȓ ȫșȓȘȠȞȜțțȩȣ ȟȐȜȗȟȠȐ ȝȜȐȓȞȣțȜȟȠȓȗ SiC-6H Ȗ SiC-15R // ǼȝȠȜȫșȓȘȠȞȜțȖȘȎ Ȗ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȎȭ ȠȓȣțȖȘȎ. – 1997. – Ɋ32. – ǿ. 49–57.

38.DZȜȞȘȡț Ȍ.Ƕ. ȀȓȜȞȖȭ ȫȢȢȓȘȠȎ ȝȜșȭ ȝȞȖ țȖȕȘȖȣ ȠȓȚȝȓȞȎȠȡ-

ȞȎȣ // ȂȀǽ. – 1961. – 3, Ɋ4. – ǿ. 1061–1065.

39.ǰȎȐȖșȜȐ ǰ.ǿ., ǸȖȟȓșȓȐ ǰ.Ȃ., ǹȡȘȎȦȓȐ ǯ.ǻ. DzȓȢȓȘȠȩ Ȑ ȘȞȓȚțȖȖ Ȗ țȎ ȓȑȜ ȝȜȐȓȞȣțȜȟȠȖ. – Ǻ.: ǻȎȡȘȎ, 1990. – 216 c.

40.ǰȓȞȓțȥȖȘȜȐȎ Ǿ.DZ., ǿȎțȘȖț ǰ.ǻ. ǰșȖȭțȖȓ ȠȓȞȚȖȥȓȟȘȜȑȜ ȜȠȔȖȑȎ țȎ ȟȐȜȗȟȠȐȎ ȏȎȞȪȓȞȜȐ ȆȜȠȠȘȖ Cr-SiC n- Ȗ p-ȠȖȝȎ ȫșȓȘȠȞȜ-

ȝȞȜȐȜȒțȜȟȠȖ // ȂȀǽ. – 1988. – 22, Ɋ9. – ǿ. 1692–1695.

41.ǰȓȞȓțȥȖȘȜȐȎ Ǿ.DZ., ǿȎțȘȖț ǰ.Ƕ., ǾȎȒȜȐȎțȜȐȎ dz.Ƕ. ǰșȖȭțȖȓ ȐȎȘȎțȟȖȗ țȎ ȢȜȞȚȖȞȜȐȎțȖȓ ȝȜȐȓȞȣțȜȟȠțȩȣ ȏȎȞȪȓȞȜȐ ȝȜșȖȠȖ-

ȝȜȐ SiC // ȂȀǽ. – 1983. – 17, Ɋ10. – ǿ. 1757–1760.

42.DzȎȐȩȒȜȐ ǿ.Ȍ., ǹȓȏȓȒȓȐ Ǯ.Ǯ., ǽȜȟȞȓȒțȖȘ Ǽ.ǰ., ȀȎȖȞȜȐ Ȍ.Ǻ. ǸȜțȠȎȘȠ ȚȓȠȎșș–ȘȎȞȏȖȒ ȘȞȓȚțȖȭ: ȕȎȐȖȟȖȚȜȟȠȪ ȐȩȟȜȠȩ ȏȎȞȪȓȞȎ ȆȜȠȠȘȖ ȜȠ ȝȜșȖȠȖȝȎ SiC // ȂȀǽ. – 2001. – 95, Ɋ12. –

ǿ. 1437–1439.

43.DzȎȐȩȒȜȐ ǿ.Ȍ., ǹȓȏȓȒȓȐ Ǯ.Ǯ., ǽȜȟȞȓȒțȖȘ Ǽ.ǰ., ȀȎȖȞȜȐ Ȍ.Ǻ. ǾȜșȪ ȐȎȘȎțȟȖȗ ȘȞȓȚțȖȭ Ȑ ȢȜȞȚȖȞȜȐȎțȖȖ ȏȎȞȪȓȞȜȐ ȆȜȠȠȘȖ țȎ ȘȜțȠȎȘȠȎȣ Ag Ȗ Au c 3C- Ȗ 6H-SiC // ȂȀǽ. – 2002. – 36, Ɋ6. – ǿ. 690–691.

392 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

44.Cowley A.M., Sze S.M. Surface States and Barrier Height of Metal-Semiconductor Systems // J.Appl. Phys. – 1965. – 36, N10. – P. 3212–3220.

45.Bardeen J. Surface States and RectiÀcation at a Metal Semiconductor contact // Phys. Rev. – 1974. – 71, N10. – P. 717–727.

46.Kurtin S., Mcgill T.C., Mead C.A. Fundamental transition in the electronic nature of solid // Phys. Rev. Lett. – 1969. – 22, N26. –

P.1433–1436.

47.Hagen S.H. Surface-Barrier Diodes on Silicon Carbide // J. Appl. Phys. – 1968. – 39, N3. – P. 1458–1461.

48.Waldrop J.R., Grant R.V., Wang Y.C., Davis R.F. Metal Schottky barrier contacts to alpha 6H-SiC // J.Appl.Phys. – 1992. – 72, N10. – P. 4757–4760.

49.Waldrop J.R., Grant R.W. Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC: Crystal face dependence // Appl. Phys. Lett. – 1993. – 62, N21. – P. 2685–2687.

50.Waldrop J.R., Grant R.V. Formation and Schottky barrier height of metal contacts to C-SiC // Appl. Phys. Lett. – 1990. – 56, N6. – P. 557–559.

51.ǹȡȥȖțȖț ǰ.ǰ., ǺȎșȪȤȓȐ ǽ.ǽ., ǺȎșȭȘȜȐ dz.ǽ. ȆȖȞȜȘȜȕȜțțȩȓ ȚȎȠȓȞȖȎșȩ ȜȟțȜȐȎ ȫȘȟȠȞȓȚȎșȪțȜȗ ȫșȓȘȠȞȜțȖȘȖ ȏȡȒȡȧȓȑȜ //

ǺȖȘȞȜȫșȓȘȠȞȜțȖȘȎ. – 1999. – 28, Ɋ1. – ǿ. 21–29.

52.ǹȓȏȓȒȓȐ Ǯ.Ǯ., ȅȓșțȜȘȜȐ ǰ.dz. ȆȖȞȜȘȜȕȜțțȩȓ ȝȜșȡȝȞȜȐȜȒțȖȘȖ Ȓșȭ ȟȖșȜȐȜȗ ȫșȓȘȠȞȜțȖȘȖ // ȂȀǽ. – 1999. – 33, Ɋ 9. –

ǿ. 1096–1099.

53.Muehlhoff L., Chogke W.J., Bozack M.J. Yates John T. In Comparative electron spectroscopic studies of surface regregation on SiC (0001) and SiC (0001) // J.Appl. Phys. – 1986. – 60, N8. –

P.2842–2853.

54.Hathan M., Ahern J.S. On the nanometer-scale Solid-State reaction at thin-Àlm Ni/amorphous SiC and Co/amorphous SiC interfaces // J. Appl. Phys. – 1991. – 70, N2. – P. 811–820.

55.ǯȎșșȎțȒȜȐȖȥ ǰ.ǿ., ǹȡȥȖțȖț ǰ.ǰ., ǽȓȠȞȜȐ Ǯ.Ǯ., ȀȜȞȑȎȦȓȐ Ȍ.ǻ. ǸȜțȠȎȘȠȩ ȚȓȠȎșș–ȝȜșȡȝȞȜȐȜȒțȖȘ Ȑ ȫȘȟȠȞȓȚȎșȪțȜȗ ȫșȓȘȠȞȜțȖȘȓ // ǽȓȠȓȞȏȡȞȑȟȘȖȗ ȔȡȞțȎș ȫșȓȘȠȞȜțȖȘȖ. – 1994. – Ɋ2. –

ǿ. 47–51.

56.Delucca S.M., Mohney S.E. Approaches to high temperature contacts to silicon carbide // Mat. Res. Soc. Sump. Proc. – 1996. – 27. –P. 137–140.

57.Goesmann F., Sohmid-Fetzer R. Stability of W as electrical contact on 6H-SiC: phase relation and interface reaction in the ternary system W-Si-C // Mat. Sci. Eng. A. – 1995. – B 34, N2–3. –

P.224–231.

58.Geib K.M., Wilson C., Long R.G., Wilmsen C.W. Reaction between SiC and W, Mo, and Ta at elevated temperatures // J.Appl. Phys. – 1990. – 68, N6. – P. 2796–2803.

59.Kakanakova-Georgieva A., Marinova Ts., Noblanc O., Arnodo C., Cassette S., Brylinski C. XPS characterization of tungsten-based contact lagers on 4H-SiC // Thin Solid Films. – 1999. – 337, N1–2. –

P.180–183.

60.Jacob C., Pirouz P., Kuo H.-I., Mehregany M. High temperature ohmic contacts to 3C-silicon carbide Àlms // Solid-State Electron. – 1998. – 42, N12. – P. 2329–-2334.

61.Baud L., Jaussaud C., Madar R., Bernard C., Chen J.S., Nicolet M.A. Interfacial reactions on W thin Àlm on single-crystal (001) C-SiC // Mat. Sci. Eng. B. – 1995. – B 29, N1–3. – P. 126–130.

62.Hara S., Suzuki K., Furuyga A., Matsui Y., Ueno T., Ohdomari I., Hisawa S., Sakuma E., Yoshida S., Ueda Y., Suzuki S. Solid State reaction of Mo on Cubic and hexagonal SiC // Jap. J.Appl. Phys. –1990. – 29, part 2, N3. – P. L394–L397.

63.Chen J.S., Kolawa E., Nicolet M.-A. Reaction of Ta thin Àlm with single crystalline (001) C-SiC // J. Appl. Phys. – 1994. – 76, N4. –

P.2169–2175.

64.Shalish I., Yoram Shapira. Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC // J.Vac. Sci. Technol. B. – 2000. – B 18, N5. –

P.2477–2481.

394 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

65.Abdizhaliev S.K., Konakova R.V., Kudrik Ya.Ya., Lytvyn P.M., Lytvyn O.S., Milenin V.V., Rengevych O.E., Venger E.F., Vlaskina S.I. Interactions between Phases and Thermal stability of

TiBx (ZrBx) – n-SiC-6H contacts // Proceedings the Fourth International Conference on Advanced Semiconductor Devices and Microsystems. Slovakia, 2002. – P. 95–98.

66.ǯȜșȠȜȐȓȤ ǻ.ǿ., ǵȜȞȓțȘȜ Ǯ.ǰ., ǶȐȎțȜȐ ǰ.ǻ., ǰșȎȟȘȖțȎ ǿ.Ƕ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǹȖȠȐȖț ǽ.Ǻ., ǹȖȠȐȖț Ǽ.ǿ., ǺȖșȓțȖț ǰ.ǰ., ǮȏȒȖȔȎșȖȓȐ ǿ.Ǹ. ǼȟȜȏȓțțȜȟȠȖ ȢȜȞȚȖȞȜȐȎțȖȭ Ȗ ȠȓȞȚȜȟȠȎȏȖșȪțȜȟȠȪ ȏȎȞȪȓȞțȩȣ ȘȜțȠȎȘȠȜȐ Ș ȐȩȟȜȘȜȥȡȐȟȠȐȖȠȓșȪțȩȚ ȘȎȞȏȖȒȘȞȓȚțȖȓȐȩȚ ȒȓȠȓȘȠȜȞțȩȚ ȒȖȜȒȎȚ // ǽȖȟȪȚȎ Ȑ ǴȀȂ. – 2003. – 29, Ɋ8. – ǿ. 47–55.

67.Boltovets N.S., Ivanov V.N., Konakova R.V., Kudryk Ya.Ya., Milenin V.V., Lytvyn O.S., Lytvyn P.M., Vlaskina S.I., Agueev O.A., Svetlichny A.M., Soloviev S.I., Sudarshan T.S. SiC

Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers // SPQEO. – 2004. – 7, N1. – P. 60–62.

68.ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǶȐȎțȜȐ ǰ.ǻ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǹȖȠȐȖț ǽ.Ǻ., ǺȖșȓțȖț ǰ.ǰ., ǿȎȥȓțȘȜǮ.ǰ.

DzȖȜȒȩ ȟ ȏȎȞȪȓȞȜȚ ȆȜȠȠȘȖ Au-TiBx-n-6H-SiC: ǼȟȜȏȓțțȜȟȠȖ ȠȜȘȜȝȓȞȓțȜȟȎ Ȑ ȐȩȝȞȭȚșȭȬȧȖȣ Ȗ țȓȐȩȝȞȭȚșȭȬȧȖȣ ȘȜțȠȎȘ-

ȠȎȣ // ȂȀǽ. – 2009. – 43, Ɋ7. – ǿ. 897–903.

69.ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǶȐȎțȜȐ ǰ.ǻ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸșȎȒȪȘȜ ǰ.ǽ., ǸȡȒȞȖȘ ȍ.ȍ., ǹȓȏȓȒȓȐ Ǯ.Ǯ., ǺȖșȓțȖț ǰ.ǰ.,

ȆȓȞȓȚȓȠ ǰ.ǻ. ǿȐȜȗȟȠȐȎ ȘȜțȠȎȘȠȜȐ GaN(SiC)-(Ti, Zr)Bx, ȝȜȒȐȓȞȑțȡȠȩȣ ȏȩȟȠȞȩȚ ȠȓȞȚȜȜȠȔȖȑȎȚ // ȂȀǽ. – 2009. – 43, Ɋ8. –

ǿ. 1125–1130.

70.ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǶȐȎțȜȐ ǰ.ǻ., ǸȎȝȖȠȎțȥȡȘ ǹ.Ǻ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǺȖșȓțȖț ǰ.ǰ. ȀȓȞȚȜ- Ȗ ȞȎȒȖȎȤȖȜțțȜȟȠȎȏȖșȪțȩȓ ȘȜțȠȎȘȠȩ Ș SiC țȎ ȜȟțȜȐȓ ȘȐȎȕȖȎȚȜȞȢțȩȣ ȝșȓțȜȘ ZrB2 //ȂȀǽ. – 2009. – 43, Ɋ6. – ǿ. 755–758.

71.Oder T.N., Martin P., Adedeji A.V., Isaacs-Smith T., Williams J.R.

Improved Schottky Contacts on n-Type 4H-SiC using ZrB2 Deposited at High Temperatures // J.Electron. Mat. – 2007. – 36, Ɋ7. – P. 805–811.

72.Kumta A., Rusli, Chin-Che Tin, Valeri L., Yoon S.F., Ahn J. Un-

terminated 4H-SiC Schottky barrier diodes with novel HfNxBy electrodes // Microelectron. Eng. – 2006. – 83, N1. – P. 37–40.

73.Kummari Rani, Oder Tom. Improved n-type 4H-SiC Schottky Barrier Diodes Using Metal Boride Contacts // American Physical Society, 2009, Joint Spring Meeting of the Ohio Sections of the APS and AAPT, April 24–25, 2009. Abstract. – C3.005.

74.Oder T.N., Sutphin E., Kummari R. Ideal SiC Schottky barrier diodes fabricated using refractory metal borides // J.Vac. Sci. Technol. B. – 2009. – 27, N4. – P. 1865–1869.

75.ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǺȖșȓțȖț ǰ.ǰ., ǽȖșȖȝȓțȘȜ ǰ.Ǯ. ȂȎȕȩ ȐțȓȒȞȓțȖȭ Ȑ ȠȓȣțȜșȜȑȖȖ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȩȣ ȝȞȖȏȜȞȜȐ Ȗ ǿǯǶǿ / ǽȜȒ ȞȓȒ. Ȓ.Ƞ.ț. ȝȞȜȢ. ǸȜțȎȘȜȐȜȗ Ǿ.ǰ. – ȃȎȞȪȘȜȐ: ǻȀǸ «ǶțȟȠȖȠȡȠ ȚȜțȜȘȞȖȟȠȎșșȜȐ», 2008. – 392 c.

76.Boltovets N.S., Ivanov V.N., Kapitanchuk L.M., Vlaskina S.I., Konakova R.V., Lytvyn P.M., Lytvyn O.S., Milenin V.V., Kudryk Ya.Ya., Abdizhaliev S.K., Rengevych O.E., Rodionov V.E. Effect of rapid thermal anneling on the barrier properties of

TiBx-n-6HSiC Contact //Abstract IV Internat. Seminar of Silicon Carbide and Related Mater. May 30–31, 2002. Novgorod the Great (Russia). – 2002. – P. 65–66.

77.ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǰșȎȟȘȖțȎ ǿ.Ƕ., ǸȡȒȞȖȘ ȍ.ȍ., ǺȖșȓțȖț ǰ.ǰ., ǹȖȠȐȖț ǽ.Ǻ., ǮȏȒȖȔȎșȖȓȐ ǿ.Ǹ., ǶȟȚȎȖșȜȐ Ǹ.Ǯ., ǸȎȝȖȠȎțȥȡȘ ǹ.Ǻ. ǰșȖȭțȖȓ ȏȩȟȠȞȩȣ ȠȓȞȚȖȥȓȟȘȖȣ Ȗ ǿǰȅ ȜȏȞȎ-

ȏȜȠȜȘ țȎ ȏȎȞȪȓȞțȩȓ ȟȐȜȗȟȠȐȎ ȘȜțȠȎȘȠȎ TiBx-n-SiC6H // ȀȞȡȒȩ III ǺȓȔȒȡțȎȞȜȒțȜȗ ȘȜțȢȓȞȓțȤȖȖ «ǾȎȒȖȎȤȖȜțțȜ-ȠȓȞȚȖȥȓȟȘȖȓ ȫȢȢȓȘȠȩȖȝȞȜȤȓȟȟȩȐțȓȜȞȑȎțȖȥȓȟȘȖȣȚȎȠȓȞȖȎșȎȣ», 29 ȖȬșȭ –

3 ȎȐȑȡȟȠȎ 2002. ȀȜȚȟȘ (ǾȜȟȟȖȭ). – 2002. – ǿ. 256–258.

78.ǯȜșȠȜȐȓȤǻ.ǿ., ǶȐȎțȜȐǰ.ǻ., ǮȏȒȖȔȎșȖȓȐǿ.Ǹ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǹȖȠȐȖț Ǽ.ǿ., ǹȖȠȐȖț ǽ.Ǻ., ǺȖșȓțȖț ǰ.ǰ., Ǿȓț-

ȑȓȐȖȥ Ǯ.dz. ȀȓȞȚȜȟȠȜȗȘȖȓ ȏȎȞȪȓȞȩ ȆȜȠȠȘȖ Au-ZrBx-n-SiC6H // ȀȞȡȒȩ 12-Ȝȗ ǺȓȔȒȡțȎȞȜȒțȜȗ ǸȞȩȚȟȘȜȗ ȘȜțȢȓȞȓțȤȖȖ «ǿǰȅ ȠȓȣțȖȘȎ Ȗ ȚȖȘȞȜȐȜșțȜȐȩȓ ȠȓȣțȜșȜȑȖȖ», 9–13 ȟȓțȠȭȏȞȭ 2002. ǿȓȐȎȟȠȜȝȜșȪ (ǸȞȩȚ, ȁȘȞȎȖțȎ). – 2002. – ǿ. 159–160.

396 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.

79.Boltovets N.S., Ivanov V.N., Zorenko A.V., Konakova R.V., Ku-

dryk Ya.Ya., Milenin V.V., Abdizhaliev S.K. Highly sensitive microwave defecting Au-TiBx(ZrBx)-nSiC6H diodes // Proc 25th Internat. Semicond.Conf. 8–12 October 2002. Sinaia (Romania). – 2002. – 1. – P. 49–52.

80.ǯȜșȠȜȐȓȤ ǻ.ǿ., ǶȐȎțȜȐ ǰ.ǻ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǺȖșȓțȖț ǰ.ǰ., ǮȑȓȓȐ Ǽ.Ǯ., ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ., ǿȜșȜȐȪȓȐ ǿ., Sudar-

shan T.S. ȀȓȣțȜșȜȑȖȥȓȟȘȖȓ ȎȟȝȓȘȠȩ ȟȜȕȒȎțȖȭ ȝșȎțȎȞțȩȣ ȚȖȘ- ȞȜȐȜșțȜȐȩȣȒȖȜȒȜȐȟȏȎȞȪȓȞȜȚȆȜȠȠȘȖAu-Ti(ZrBx)-n-n+4HSiC // ȀȞȡȒȩ 13-Ȝȗ ǺȓȔȒȡțȎȞȜȒțȜȗ ǸȞȩȚȟȘȜȗ ȘȜțȢȓȞȓțȤȖȖ «ǿǰȅ ȠȓȣțȖȘȎ Ȗ ȠȓșȓȘȜȚȚȡțȖȘȎȤȖȜțțȩȓ ȠȓȣțȜșȜȑȖȖ» 8–12 ȟȓțȠȭȏȞȭ

2003. ǿȓȐȎȟȠȜȝȜșȪ (ǸȞȩȚ, ȁȘȞȎȖțȎ). – 2003. – ǿ. 562–563.

81.ǺȖșȓțȖț ǰ.ǰ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǹȖȠȐȖț Ǽ.ǿ., ǰșȎȟȘȖțȎ ǿ.Ƕ., ǾȜȒȖȜțȜȐ ǰ.dz. ǺȓȔȢȎȕțȩȓ ȐȕȎȖȚȜȒȓȗȟȠȐȖȭ Ȗ ȫȢȢȓȘȠȩ ȞȓșȎȘȟȎȤȖȖ ȐțȡȠȞȓțțȖȣ ȚȓȣȎțȖȥȓȟȘȖȣ țȎȝȞȭȔȓțȖȗ

Ȑ ȟȠȞȡȘȠȡȞȎȣ TiB2-GaAs(InP, GaP, SiC) // Conference papers. “Structural relaxation in solids”. 13-15 May, 2003. Vinnitsa (Ukraine). – 2003. – P. 124–125.

82.Boltovets N.S., Konakova R.V., Kudryk Ya.Ya., Lytvyn P.M., Milenin V.V., Sachenko A.V. Some features of current Áow in for- ward-biased silicon carbide Schottky diodes and p-n junctions // Abstracts V Internat. Seminar on Silicon Carbide and Related Mater. 25–26 May, 2004. Velikij Novgorod (Russia). – 2004. – P. 115.

83.ǯȜșȠȜȐȓȤ ǻ.ǿ., DzȎțȖșȪȥȓțȘȜ ǯ.Ǯ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ. ȍ., ǺȖșȓțȖțǰ.ǰ. ǰșȖȭțȖȓȚȎșȩȣȒȜȕJ-ȞȎȒȖȎȤȖȖțȎȝȎȞȎȚȓȠ- Ȟȩ ȘȎȞȏȖȒȘȞȓȚțȖȓȐȩȣ ȒȖȜȒȜȐ ȆȜȠȠȘȖ // ȀȞȡȒȩ XIV ǺȓȔȒȡțȎȞȜȒțȜȑȜ ȟȜȐȓȧȎțȖȭ «ǾȎȒȖȎȤȖȜțțȎȭ ȢȖȕȖȘȎ ȠȐȓȞȒȜȑȜ ȠȓșȎ»

5–10 ȖȬșȭ 2004. ǿȓȐȎȟȠȜȝȜșȪ, ǺȜȟȘȐȎ. – 2004. – ǿ. 409–413.

84.ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǹȖȠȐȖț ǽ.Ǻ., ǺȖșȓțȖț ǰ.ǰ., ǮȑȓȓȐ Ǽ.Ǯ., ǿȓȥȓțȜȐ Dz.Ǯ., ǿȐȓȠșȖȥțȩȗ Ǯ.Ǻ., ǿȎȥȓțȘȜ Ǯ.ǰ. ǼȟȜȏȓțțȜȟȠȖ ȠȜȘȜȝȓȞȓțȜȟȎ Ȑ SiC ȒȖȜȒȎȣ ȆȜȠȠȘȖ ȝȞȖ ȝȞȭȚȜȚ ȟȚȓȧȓțȖȖ // ȀȞȡȒȩ 9-Ȝȗ ǺȓȔȒȡțȎȞȜȒțȜȗ țȎȡȥțȜ-ȠȓȣțȖȥȓȟȘȜȗ ȘȜțȢȓȞȓțȤȖȖ «ǮȘȠȡȎșȪțȩȓ ȝȞȜȏșȓȚȩ ȠȐȓȞȒȜȠȓșȪțȜȗ ȫșȓȘȠȞȜțȖȘȖ Ȗ ȚȖȘȞȜȫșȓȘȠȞȜțȖȘȖ». 12–17 ȟȓțȠȭȏȞȭ 2004. DzȖȐțȜȚȜȞȟȘȜȓ (ǾȜȟȟȖȭ). ȀȎȑȎțȞȜȑ. – 2004. – ȅ.1. –

ǿ. 271–273.

85.Boltovets N.S., Konakova R.V., Kudryk Ya.Ya., Lytvyn P.M., Milenin V.V., Sachenko A.V. Current Áow features from the

forward branch of I-V Curve of TiB2-6HSiC Schottky diodes //

ȀȞȡȒȩ ǺȓȔȒȡțȎȞȜȒțȜȗ țȎȡȥțȜ-ȠȓȣțȖȥȓȘȜȗ ȘȜțȢȓȞȓțȤȖȖ «ǶțȢȜȞȚȎȤȖȜțțȩȓ Ȗ ȫșȓȘȠȞȜțțȩȓ ȠȓȣțȜșȜȑȖȖ Ȑ ȒȖȟȠȎțȤȖȜțțȜȚ ȕȜțȒȖȞȜȐȎțȖȖ», 20–23 ȒȓȘȎȏȞȭ 2004. ǯȎȘȡ (ǮȕȓȞȏȎȗȒ-

ȔȎț). – 2004. – ǿ. 273–275.

86.ǯȜșȠȜȐȓȤ ǻ.ǿ., ǶȐȎțȜȐ ǰ.ǻ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǹȖȠȐȖț Ǽ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǹȖȠȐȖț ǽ.Ǻ., ǺȖșȓțȖț ǰ.ǰ. ǺȓȔȢȎȕțȩȓ ȐȕȎȖȚȜȒȓȗȟȠȐȖȭ Ȗ ȜȟȜȏȓțțȜȟȠȖ ȟȠȞȡȘȠȡȞ-

țȜȗ ȞȓșȎȘȟȎȤȖȖ Ȑ ȘȜțȠȎȘȠȎȣ TiBx-n-GaAs (InP, GaP, 6H-SiC),

ȝȜȒȐȓȞȑțȡȠȩȣ ȎȘȠȖȐțȩȚ ȜȏȞȎȏȜȠȘȎȚ // ȂȀǽ. – 2004. – 38, Ɋ7. –

ǿ. 769–774.

87.Boltovets N.S., Ivanov V.N., Avksentyev A.Yu., Belyaev A.E., Borisenko A.G., Fedorovitsh. O.A., Konakova R.V., Kudryk Ya.Ya., Lytvyn P.M., Milenin V.V., Sachenko A.V., Sveschnikov Yu.N. High Temperature Contacts to GaN and SiC Based on

TiBx Nanostructure Layers // Mat. Sci. Forum. – 2005. – 483– 485. – P. 1061–1064.

88.ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., DzȎțȖșȪȥȓțȘȜ ǰ.Ǯ., ǸȎȝȖȠȎțȥȡȘ ǹ.Ǻ., ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǺȖșȓțȖț ǰ.ǰ. ǾȎȒȖȎȤȖ-

ȜțțȜȟȠȜȗȘȖȓȒȖȜȒȩȆȜȠȠȘȖZrBx-n-6H(15R)SiC // ȀȞȡȒȩXV ǺȓȔȒȡțȎȞȜȒțȜȑȜ ȟȜȐȓȧȎțȖȭ «ǾȎȒȖȎȤȖȜțțȎȭ ȢȖȕȖȘȎ ȠȐȓȞȒȜȑȜ ȠȓșȎ»

4–9 ȖȬșȭ 2005. ǿȓȐȎȟȠȜȝȜșȪ, ǺȜȟȘȐȎ. – 2005. – ǿ. 251–255.

89.ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǶȐȎțȜȐ ǰ.ǻ., ǸȎȝȖȠȎțȥȡȘ ǹ.Ǻ.,

ǸȜțȎȘȜȐȎ Ǿ.ǰ., ǸȡȒȞȖȘ ȍ.ȍ., ǺȖșȓțȖț ǰ.ǰ. ǰșȖȭțȖȓ H-ȞȎȒȖ- ȎȤȖȖ 60ǿȜ țȎ ȫșȓȘȠȞȖȥȓȟȘȖȓ ȣȎȞȎȘȠȓȞȖȟȠȖȘȖ Ȗ ȝȎȞȎȚȓȠȞȩ

ȑȞȎțȖȤȩ ȞȎȕȒȓșȎ ȏȎȞȪȓȞțȩȣ ȘȜțȠȎȘȠȜȐ ZrB2-n-6H(15R)SiC // ȀȞȡȒȩ 6-Ȝȗ ǺȓȔȒȡțȎȞȜȒțȜȗ ȘȜțȢȓȞȓțȤȖȖ «ǰȕȎȖȚȜȒȓȗȟȠȐȖȓ ȖȕșȡȥȓțȖȭ ȟ ȠȐȓȞȒȩȚ ȠȓșȜȚ». 28–30 ȟȓțȠȭȏȞȭ 2005. ǺȖțȟȘ

(ǯȓșȎȞȡȟȪ). – 2005. – ǿ. 206–208.

90.Belyaev A.E., Boltovets N.S., Danilchenko B.A., Kapitanchuk L.M., Konakova R.V., Kudryk Ya.Ya., Milenin V.V. Heat

and radiation-stable ZrBx-n6HSiC Schottky barrier diodes // ȀȞȡȒȩ

V ǺȓȔȒȡțȎȞȜȒțȜȗ țȎȡȥțȜ-ȠȓȣțȖȥȓȟȘȜȗ ȘȜțȢȓȞȓțȤȖȖ «ǺȖȘȞȜȫșȓȘȠȞȜțțȩȓ ȝȞȓȜȏȞȎȕȜȐȎȠȓșȖ Ȗ ȝȞȖȏȜȞȩ țȎ Ȗȣ ȜȟțȜȐȓ». 5–8 ȒȓȘȎȏȞȭ 2005. ǯȎȘȡ, ǿȡȚȑȎȖȠ (ǮȕȓȞȏȎȗȒȔȎț). – 2005. – ǿ. 307–308.

țȩȣ, ȝȞȖȐȓȒȓțțȩȣ Ȑ ȠȎȏș. 2.1 Ȗ 2.2, ȐȖȒțȜ, ȥȠȜ ȘȞȖȠȓȞȖȖ ȘȎȥȓȟȠȐȎ – «figure of merit» (fm), ȝȞȓȒșȜȔȓțțȩȓ ȒșȭȜȤȓțȘȖȐȜȕȚȜȔțȜȟȠȓȗ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȩȣ ȚȎȠȓȞȖȎșȜȐ, Ȓșȭ6H-SiC Ȗ4H-SiC, ȝȞȎȘȠȖȥȓȟȘȖ ȝȜ ȐȟȓȚ ȝȜȕȖȤȖȭȚ ȝȞȓȐȩȦȎȬȠ fm Ȓșȭ ȠȞȎȒȖȤȖȜțțȩȣ Si, GaAs, GaP Ȗ ȠȎȘȖȣ ȠȞȖțȖȠȞȖȒȜȐ ȘȎȘ GaN Ȗ AlN, ȡȟȠȡȝȎȭ ȝȜ țȓȘȜȠȜȞȩȚ ȝȎȞȎȚȓȠȞȎȚ șȖȦȪ ȎșȚȎȕȡ [10 15]. ǰ ȠȜ Ȕȓ ȐȞȓȚȭ SiC ȐȩȑȜȒțȜ ȐȩȒȓșȭȓȠȟȭ Ȗȕ ȒȞȡȑȖȣ ȚȎȠȓȞȖȎșȜȐ (ȟȚ. ȠȎȏș. 2.2) ȝȜ ȟȜȜȠțȜȦȓțȖȬ ȝȞȓȒȓșȪțȜȗ ȞȎȏȜȥȓȗ ȠȓȚȝȓȞȎȠȡȞȩ Ȁoper, ȜȝȞȓȒȓșȭȓȚȜȗ ȦȖȞȖțȜȗ ȕȎȝȞȓȧȓțțȜȗ ȕȜțȩ ȝȜșȡȝȞȜȐȜȒțȖȘȎ, Ȗ ȠȓȚȝȓȞȎȠȡȞȩ DzȓȏȎȭ TD, ȜȝȞȓȒȓșȭȬȧȓȗ ȝȞȓȒȓș ȠȓȞȚȖȥȓȟȘȜȗ ȟȠȎȏȖșȪțȜȟȠȖ ȝȜșȡȝȞȜȐȜȒțȖȘȎ. ǽȜȟȘȜșȪȘȡ

Ȓșȭ SiC Toper xTD x1200°C, ȟȜȐȓȞȦȓțțȜ ȜȥȓȐȖȒțȜ, ȥȠȜ țȓȟȚȜȠȞȭ țȎ ȜȏȧȖȓȢȖȕȖȥȓȟȘȖȓȝȞȖțȤȖȝȩȢȜȞȚȖȞȜȐȎțȖȭȜȚȖȥȓȟȘȖȣȘȜțȠȎȘ-

ȠȜȐ Ȓșȭ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȩȣ ȝȞȖȏȜȞȜȐ, ȠȓȣțȜșȜȑȖȥȓȟȘȖȓ ȎȟȝȓȘȠȩ ȟȜȕȒȎțȖȭ ȜȚȖȥȓȟȘȖȣ ȘȜțȠȎȘȠȜȐ Ș ȘȎȞȏȖȒȡ ȘȞȓȚțȖȭ ȜȠșȖȥȎȬȠȟȭ ȜȠ ȠȞȎȒȖȤȖȜțțȩȣ Ȓșȭ Si Ȗ GaAs ȝȞȓȔȒȓ ȐȟȓȑȜ ȐȩȟȜȘȜȠȓȚȝȓȞȎȠȡȞțȩȚȖ ȠȓȣțȜșȜȑȖȥȓȟȘȖȚȖ ȝȞȜȤȓȟȟȎȚȖ.

ǻȎȞȭȒȡ ȟ ȐȩȟȜȘȜȗ ȠȓȞȚȜȟȠȜȗȘȜȟȠȪȬ, ȘȎȘ ȟȎȚ ȚȎȠȓȞȖȎș SiC, ȠȎȘ Ȗ ȝȞȖȏȜȞțȩȓȟȠȞȡȘȠȡȞȩțȎȓȑȜȜȟțȜȐȓȣȎȞȎȘȠȓȞȖȕȡȬȠȟȭȏȜșȓȓȐȩȟȜȘȜȗ, ȥȓȚSi ȖGaAs, ȞȎȒȖȎȤȖȜțțȜȗȟȠȜȗȘȜȟȠȪȬ. ǶȚȓțțȜȫȠȎȜȟȜȏȓțțȜȟȠȪ SiC ȝȞȖȐșȓȘȎȓȠ Ș țȓȚȡ ȞȎȕȞȎȏȜȠȥȖȘȜȐ ȎȝȝȎȞȎȠȡȞȩ Ȓșȭ ȘȜȟȚȖȥȓȟȘȜȗ ȫșȓȘȠȞȜțȖȘȖ, ȚȜțȖȠȜȞȖțȑȎȞȎȒȖȎȤȖȜțțȜ-ȜȝȎȟțȩȣȕȜț, ȭȒȓȞțȜ-ȫțȓȞ- ȑȓȠȖȥȓȟȘȖȣȡȟȠȎțȜȐȜȘȖȒȞȡȑȖȣȡȟȠȞȜȗȟȠȐȟȝȓȤȖȎșȪțȜȑȜțȎȕțȎȥȓțȖȭ. ǾȎȒȖȎȤȖȜțțȎȭ ȟȠȜȗȘȜȟȠȪ ȐȩȦȓ Ȑ ȝȜșȡȝȞȜȐȜȒțȖȘȎȣ ȟ ȏȜșȪȦȜȗ ȫțȓȞȑȖȓȗ ȟȐȭȕȖ Ȗ ȐȩȟȜȘȜȗ ȝȜȞȜȑȜȐȜȗ ȫțȓȞȑȖȓȗ ȒȓȢȓȘȠȜȜȏȞȎȕȜȐȎțȖȭ Ed. ǶȕȠȎȏș. 2.3 ȐȖȒțȜ, ȥȠȜȖȕȝȞȓȒȟȠȎȐșȓțțȩȣȐțȓȗȝȜșȡȝȞȜȐȜȒțȖȘȜȐȩȣ ȚȎȠȓȞȖȎșȜȐȝȜȫțȓȞȑȖȖȟȐȭȕȖȘȎȞȏȖȒȘȞȓȚțȖȭȡȟȠȡȝȎȓȠȠȜșȪȘȜȎșȚȎȕȡ, ȎȝȜȞȎȟȥȓȠțȜȗȐȓșȖȥȖțȓȝȜȞȜȑȜȐȜȗȫțȓȞȑȖȖȒȓȢȓȘȠȜȜȏȞȎȕȜȐȎțȖȭ 6H-SiC Ȗ4H-SiC ȝȜșȖȠȖȝȩȝȞȓȐȜȟȣȜȒȭȠȓȑȜȐ1.9 ȞȎȕȎ. ǼȠȚȓȠȖȚȠȎȘȔȓ,

ȥȠȜ Ȑ ȟȜȜȠȐȓȠȟȠȐȖȖ ȟ [16] ȜȤȓțȘȎ ȐȓșȖȥȖțȩ Ed Ȑ ȠȎȏș. 2.3 ȝȞȜȐȓȒȓțȎ ȝȜ ȢȓțȜȚȓțȜșȜȑȖȥȓȟȘȜȗ ȢȜȞȚȡșȓ 1.117Ed = (10/ Ȏ)4.363; ȕȒȓȟȪ Ed

ȜȝȞȓȒȓșȭȓȠȟȭ Ȑ ȫǰ, Ȏ – ȝȎȞȎȚȓȠȞ ȞȓȦȓȠȘȖ Ȑ Å. ȋȘȟȝȓȞȖȚȓțȠȎșȪțȩȓ ȐȓșȖȥȖțȩ Ed Ȓșȭ ȝȜșȖȠȖȝȜȐ SiC ȖȚȓȬȠ

ȞȎȕȏȞȜȟ. ȋȠȜ ȜȏȡȟșȜȐșȓțȜ ȘȎȘ Ȗȣ ȟȡȧȓȟȠȐȓțțȜȗ ȟȠȞȡȘȠȡȞțȜȗ țȓȜȒțȜȞȜȒțȜȟȠȪȬ, ȠȎȘ Ȗ ȡȟșȜȐȖȭȚȖ ȫȘȟȝȓȞȖȚȓțȠȎ, ȝȜȟȘȜșȪȘȡ ȐȓșȖȥȖțȡ ȝȜȞȜȑȜȐȜȗ ȫțȓȞȑȖȖ ȜȝȞȓȒȓșȭȬȠ ȝȜ ȖȕȚȓțȓțȖȬ ȜȒțȜȑȜ, țȎȖȏȜșȓȓ ȥȡȐȟȠȐȖȠȓșȪțȜȑȜ ȝȎȞȎȚȓȠȞȎ Ȑ ȐȩȏȞȎțțȜȚ ȚȓȠȜȒȓ ȖȕȚȓȞȓțȖȭ, ȣȜȠȭ țȎȏșȬȒȎȓȚȜȓ ȞȎȒȖȎȤȖȜțțȜȓ ȒȓȢȓȘȠȜȜȏȞȎȕȜȐȎțȖȓ ȐșȖȭȓȠ țȎ Ȑȟȓ ȟȐȜȗȟȠȐȎ ȚȎȠȓȞȖȎșȎ.