
belyaev_a_e_konakova_r_v_red_karbid_kremniya_tehnologiya_svo
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190 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.
ȀȎȏșȖȤȎ 8.6. ǽȎȞȎȚȓȠȞȩ ȘȜȫȢȢȖȤȖȓțȠȜȐ ȒȖȢȢȡȕȖȖ ȎȠȜȚȜȐ Ȑ 6H-SiC [261]
ȋșȓ- |
ȀȓȚȝȓȞȎ- |
ǸȜȫȢȢȖȤȖȓțȠ |
ȋțȓȞȑȖȭ |
ǸȜțȤȓțȠȞȎȤȖȭ |
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ȎȘȠȖȐȎȤȖȖ |
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ȚȓțȠ |
ȠȡȞȎ, K |
D0i, ȟȚ2/ȟ |
Wi, ȫǰ |
ȝȞȖȚȓȟȓȗ, ȟȚ 3 |
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30Si |
2273 2563 |
(5.01 ± 1.71)102 |
7.22± 0.07 |
ǮȕȜȠ 1016 1017 |
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30Si |
2273 2563 |
(1.54 ± 0.78)105 |
8.18± 0.10 |
ǮȕȜȠ 3¸1019 |
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14C |
2123 2453 |
(8.62 ± 2.01)105 |
7.41± 0.05 |
ǮȕȜȠ 1016 1017 |
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14C |
2123 2453 |
(3.32 ± 1.43)107 |
8.20± 0.08 |
ǮȕȜȠ 3¸1019 |
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B |
2273 2673 |
50.00 |
5.6 |
NSB 3¸1018 |
|
|
|
|
|
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B(I) |
1873 2823 |
3.20 |
5.1 |
N B (2 5)¸1018 |
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B(T) |
1873 2823 |
0.70 |
5.1 |
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S |
|||||
B* |
1873 2823 |
0.12 |
3.4 |
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Al |
2073 2723 |
8.00 |
6.1 |
NSAl (1 1.5)¸1018, |
|
|
|
|
|
ȜȏȨȓȚțȩȗ |
|
Ga |
2173 2623 |
0.17 |
5.5r0,2 |
NSGa (3 5)¸1017 |
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Be |
1873 2573 |
0.30 |
3.1 |
NSBe țȖȔȓ 2¸1018, |
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ȜȏȨȓȚțȩȗ |
|
Be |
1873 2573 |
32.00 |
5.2 |
NSBe ȐȩȦȓ 2¸1018, |
|
|
|
|
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ȝȜȐȓȞȣțȜȟȠțȩȗ |
|
Be* |
1873 2573 |
10 4 |
1.5 |
|
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Li |
1773 2473 |
1.2¸10 3 |
1.7 |
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O |
2073 2623 |
11.00 |
6.9 |
NSO (1 2)¸1018 |
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* – ǸȞȖȟȠȎșș Ȟ-ȠȖȝȎ, ȜȏȨȓȚțȩȗ ȡȥȎȟȠȜȘ
țȩȗȟșȜȗ. ǽȞȖȒȖȢȢȡȕȖȖȎșȬȚȖțȖȭȖȏȓȞȖșȖȭȫȠȜȠȟșȜȗȜȘȎȕȩȐȎȓȠȟȭ ȘȜȚȝȓțȟȖȞȜȐȎțțȩȚ ȟ n- (ȖțȜȑȒȎ ȟ Ȟ-) ȠȖȝȜȚ ȝȞȜȐȜȒȖȚȜȟȠȖ;
x ȫȢȢȓȘȠȖȐțȩȗȘȜȫȢȢȖȤȖȓțȠȒȖȢȢȡȕȖȖȟȡȧȓȟȠȐȓțțȜȕȎȐȖȟȖȠ ȜȠ ȡȟșȜȐȖȗ, ȞȓȎșȖȕȡȓȚȩȣ țȎ ȝȜȐȓȞȣțȜȟȠȖ ȜȠȔȖȑȎȓȚȜȑȜ ȘȞȖȟȠȎșșȎ:
ȅȎȟȠȪ I, DZșȎȐȎ 8 |
191 |
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ǾȖȟ. 8.22. ȀȓȚȝȓȞȎȠȡȞțȩȓ ȕȎȐȖȟȖȚȜȟȠȖ ȘȜȫȢȢȖȤȖȓțȠȜȐ ȒȖȢȢȡȕȖȖ ȝȞȖȚȓȟȓȗ Ȑ 6H-SiC
ȜȠ ȟȜȜȠțȜȦȓțȖȭ NS/ NC Ȑ ȝȎȞȜȐȜȗȢȎȕȓȖțȎȝȜȐȓȞȣțȜȟȠȖ, ȘȜțȤȓțȠȞȎȤȖȖ șȓȑȖȞȡȬȧȓȗ ȝȞȖȚȓȟȖ, ȝȞȖȟȡȠȟȠȐȖȭ ȠȞȓȠȪȓȑȜ ȘȜȚȝȜțȓțȠȎ.
ȋȠȖȜȟȜȏȓțțȜȟȠȖ, ȘȎȘȜȠȚȓȥȓțȜȐ[261](ȞȖȟ.8.21)«ȜȏȡȟșȜȐșȓțȩ, ȐȜȟțȜȐțȜȚ, ȑȓțȓȞȎȤȖȓȗ ȡȑșȓȞȜȒțȩȣ ȐȎȘȎțȟȖȗ ȐȏșȖȕȖ ȝȜȐȓȞȣțȜȟȠȖ ȘȞȖȟȠȎșșȎ, ȘȜȠȜȞȩȓ ȝȞȜȭȐșȭȬȠ ȒȜțȜȞțȩȓ ȟȐȜȗȟȠȐȎ, ȎȠȎȘȔȓȜȏȞȎȕȜȐȎțȖȓȚ ȝȞȜȟȠȩȣ Ȗ ȟșȜȔțȩȣ ȘȜȚȝșȓȘȟȜȐ, ȟȜȟȠȜȭȧȖȣ Ȗȕ ȝȞȖȚȓȟțȩȣ ȎȠȜȚȜȐ Ȗ ȐȎȘȎțȟȖȗ».
ȀȓȚȝȓȞȎȠȡȞțȩȓȕȎȐȖȟȖȚȜȟȠȖȘȜȫȢȢȖȤȖȓțȠȜȐȒȖȢȢȡȕȖȖ(ȞȖȟ. 8.22) ȎȝȞȜȘȟȖȚȖȞȡȬȠȟȭ ȡȞȎȐțȓțȖȓȚ (8.18), ȝȎȞȎȚȓȠȞȩ ȘȜȠȜȞȜȑȜ ȝȞȓȒȟȠȎȐșȓțȩ Ȑ ȠȎȏșȖȤȓ 8.6.
8.5.3.5. DzȖȢȢȡȕȖȭ ȒȜțȜȞțȩȣ ȝȞȖȚȓȟȓȗ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ. DzȖȢȢȡȕȖȭ ȎȕȜȠȎ
ǼȟțȜȐțȜȗ ȒȜțȜȞțȜȗ ȝȞȖȚȓȟȪȬ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ ȭȐșȭȓȠȟȭ ȎȕȜȠ [261, 274]. ǿșȜȖȖȚȜțȜȘȞȖȟȠȎșșȩSiC ȖȚȓȬȠ, ȘȎȘȝȞȎȐȖșȜ, n-ȠȖȝ ȝȞȜȐȜȒȖȚȜȟȠȖ, ȕȎ ȟȥȓȠ țȓȘȜțȠȞȜșȖȞȡȓȚȜȑȜ ȐȣȜȔȒȓțȖȭ ȎȕȜȠȎ. ǮȕȜȠ ȣȎȞȎȘȠȓȞȖȕȡȓȠȟȭ ȝȞȓȒȓșȪțȜȗ ȞȎȟȠȐȜȞȖȚȜȟȠȪȬ Ȑ SiC 1¸1021 ȟȚ 3 Ȗ țȎȖȚȓțȪȦȓȗȫțȓȞȑȖȓȗȖȜțȖȕȎȤȖȖȖȕȐȟȓȣȒȜțȜȞțȩȣ ȝȞȖȚȓȟȓȗ[261, 270, 283]. ǵȎȘȜțȜȚȓȞțȜȟȠȖ șȓȑȖȞȜȐȎțȖȭ ȚȜțȜȘȞȖȟȠȎșșȜȐ Ȗ ȫȝȖȠȎȘȟȖȎșȪțȩȣ ȟșȜȓȐ ȎȕȜȠȜȚ ȝȞȖ ȐȩȞȎȧȖȐȎțȖȖ ȒȜȟȠȎȠȜȥțȜ ȣȜȞȜȦȜ Ȗȕȡȥȓțȩ[261, 274, 301]. ǰ[261] ȜȠȚȓȥȎȓȠȟȭ, ȥȠȜȑșȎȐțȩȚȝȞȓȝȭȠȟȠȐȖȓȚ ȖȕȡȥȓțȖȬ ȒȖȢȢȡȕȖȖ ȎȕȜȠȎ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ ȭȐșȭȬȠȟȭ ȠȞȡȒțȜȟȠȖ Ȑ ȜȝȞȓȒȓșȓțȖȖȘȜȫȢȢȖȤȖȓțȠȎȒȖȢȢȡȕȖȖ, ȐȓșȖȥȖțȎȘȜȠȜȞȜȑȜȝȜȞȭȒȘȎ 10 12 ȟȚ2/ȟ ȒȜȟȠȖȑȎȓȠȟȭ ȝȞȖ ȠȓȚȝȓȞȎȠȡȞȓ 2550°ǿ.
8.5.3.6. DzȖȢȢȡȕȖȭ ȢȜȟȢȜȞȎ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ.
ȂȜȟȢȜȞ ȠȎȘȔȓ ȭȐșȭȓȠȟȭ ȒȜțȜȞțȜȗ ȝȞȖȚȓȟȪȬ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ. ǰȎțȎșȖȕȓ, ȝȞȜȐȓȒȓțțȜȚȐȞȎȏȜȠȓ[271], ȡȘȎȕȩȐȎȬȠȟȭȝȞȖȥȖțȩ ȟșȎȏȜȑȜ ȖȕȡȥȓțȖȭ ȕȎȘȜțȜȚȓȞțȜȟȠȓȗ ȒȖȢȢȡȕȖȖ ȢȜȟȢȜȞȎ Ȑ SiC. ȋȠȜ – țȖȕȘȎȭ ȞȎȟȠȐȜȞȖȚȜȟȠȪ ȢȜȟȢȜȞȎ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ (2.8¸1018 ȟȚ 3

192 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.
ǾȖȟ. 8.23. ȀȓȚȝȓȞȎȠȡȞțȎȭ ȕȎȐȖȟȖȚȜȟȠȪ ȘȜȫȢȢȖȤȖȓțȠȎ ȒȖȢȢȡȕȖȖ
ȢȜȟȢȜȞȎ Ȑ SiC: 1 – p-SiC șȓȑȖȞȜ-
ȐȎțțȩȗ Al (5.0¸1020 ȟȚ 3); 2 – n-SiC
șȓȑȖȞȜȐȎțțȩȗN (3.0¸1018 ȟȚ 3)
ȝȞȖ 2500°ǿ) [261, 270, 273]. ǰ ȞȓȕȡșȪȠȎȠȓ, ȚȜțȜȘȞȖȟȠȎșșȩ SiC, șȓȑȖȞȜȐȎțțȩȓ ȢȜȟȢȜȞȜȚ, ȟȜȒȓȞȔȎȠ ȢȜțȜȐȡȬ ȝȞȖȚȓȟȪ – ȎȕȜȠ, ȟ ȠȎȘȜȗ Ȕȓ ȘȜțȤȓțȠȞȎȤȖȓȗ. ǸȞȜȚȓ ȠȜȑȜ, Ȑ ȝȞȖȟȡȠȟȠȐȖȖ ȢȜȟȢȜȞȎ ȕȎȚȓȠțȜ ȐȜȕȞȎȟȠȎȓȠ ȟȘȜȞȜȟȠȪ ȖȟȝȎȞȓțȖȭ SiC, ȥȠȜ ȝȞȖȐȜȒȖȠ Ș țȎȞȡȦȓțȖȬ ȟȠȓȣȖȜȚȓȠȞȖȖ Ȗ ȡȟșȜȔțȓțȖȬ ȐȩȟȜȘȜȠȓȚȝȓȞȎȠȡȞțȩȣ ȫȘȟȝȓȞȖȚȓțȠȜȐ.
ǰ ȞȎȏȜȠȓ [271] Ȓșȭ ȖȟȟșȓȒȜȐȎțȖȭ ȒȖȢȢȡȕȖȖ Ǿ Ȑ ȝȜȒșȜȔȘȎȣ SiC ȝȞȜȐȜȒȖșȜȟȪȠȞȎțȟȚȡȠȎȤȖȜțțȜȓșȓȑȖȞȜȐȎțȖȓȐȩȟȜȘȜȫțȓȞȑȓȠȖȥȓȟȘȖȚȖ B-ȥȎȟȠȖȤȎȚȖ ȟ ȝȜȟșȓȒȡȬȧȖȚ ȐȩȟȜȘȜȠȓȚȝȓȞȎȠȡȞțȩȚ ȜȠȔȖȑȜȚ Ȗ ȖȟȟșȓȒȜȐȎțȖȓȚ ȜȟȠȎȠȜȥțȜȗ C-ȎȘȠȖȐțȜȟȠȖ ȜȏȞȎȕȤȜȐ ȝȞȖ ȝȜȟșȜȗțȜȚ ȟȠȞȎȐșȖȐȎțȖȖ ȟșȜȓȐ. ȁȟȠȎțȜȐșȓțȜ, ȥȠȜ ȕȎȚȓȠțȩȓ ȖȕȚȓțȓțȖȭ ȘȜțȤȓțȠȞȎȤȖȜțțȜȑȜ ȝȞȜȢȖșȭ ȢȜȟȢȜȞȎ ȕȎ ȟȥȓȠ ȒȖȢȢȡȕȖȖ ȝȜȭȐșȭȬȠȟȭ ȝȞȖȠȓȚȝȓȞȎȠȡȞȎȣȐȩȦȓ2400°ǿ. ȀȓȚȝȓȞȎȠȡȞțȎȭȕȎȐȖȟȖȚȜȟȠȪȘȜȫȢȢȖȤȖȓțȠȎ ȒȖȢȢȡȕȖȖ ȢȜȟȢȜȞȎ Ȓșȭ n-6H-SiC șȓȑȖȞȜȐȎțțȜȑȜ ȎȕȜȠȜȚ ȚȜȔȓȠ ȏȩȠȪ ȎȝȝȞȜȘȟȖȚȖȞȜȐȎțȎ ȡȞȎȐțȓțȖȓȚ:
DP = 1.3¸1010 exp 11.6эВ¬
kT ®
ǰ ȜȏȞȎȕȤȎȣ, șȓȑȖȞȜȐȎțțȩȣ ȎșȬȚȖțȖȓȚ, ȘȜȫȢȢȖȤȖȓțȠ ȒȖȢȢȡȕȖȖ ȢȜȟȢȜȞȎ ȐȩȦȓ, ȘȎȘ ȟșȓȒȡȓȠ Ȗȕ ȒȎțțȩȣ, ȝȞȓȒȟȠȎȐșȓțțȩȣ țȎ ȞȖȟ. 8.23. ǻȎȜȟțȜȐȎțȖȖȝȞȜȐȓȒȓțțȜȑȜȎțȎșȖȕȎ, ȜȠȚȓȥȎȓȠȟȭ, ȥȠȜȢȜȟȢȜȞȖȎȕȜȠȕȎȚȓȧȎȬȠ Ȑ ȞȓȦȓȠȘȓ SiC ȡȑșȓȞȜȒ Ȗ ȚȖȑȞȖȞȡȬȠ ȝȜ ȐȎȘȎțȟȖȭȚ ȡȑșȓȞȜȒȎ.
8.5.3.7. DzȖȢȢȡȕȖȭ ȏȓȞȖșșȖȭ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ
ǾȓȕȡșȪȠȎȠȩ ȖȟȟșȓȒȜȐȎțȖȭ ȒȖȢȢȡȕȖȖ ȏȓȞȖșșȖȭ Ȑ SiC ȝȞȓȒȟȠȎȐ-
șȓțȩ Ȑ ȞȎȏȜȠȎȣ [24, 282, 302].
dzȧȓȐȞȎțțȖȣȖȟȟșȓȒȜȐȎțȖȭȣ[282] ȜȠȚȓȥȎȓȠȟȭ, ȥȠȜȜȟȜȏȓțțȜȟȠȪȬ ȏȓȞȖșșȖȭ ȭȐșȭȓȠȟȭ ȠȜ, ȥȠȜ Ȝț ȕȎȚȓȧȎȓȠ Ȑ ȞȓȦȓȠȘȓ SiC Ȗ ȘȞȓȚțȖȗ Ȗ
ȅȎȟȠȪ I, DZșȎȐȎ 8 |
193 |
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ǾȖȟ. 8.24. ǾȎȟȝȞȓȒȓșȓțȖȓ ȏȓȞȖșșȖȭ Ȑ 6H-SiC ȝȜȟșȓ ȒȖȢȢȡȕȖȖ ȝȞȖ ȞȎȕșȖȥțȩȣ ȠȓȚȝȓȞȎȠȡȞȎȣ (ȐȞȓȚȭ ȒȖȢȢȡȕȖȖ 30 ȚȖț.)
Ȁ°ǿ: 1 – 2200, 2 – 2100, 3 – 2000, 4 – 1800
ȡȑșȓȞȜȒ, ȝȞȖȫȠȜȚȢȜȞȚȖȞȡȓȠȒȐȎȫșȓȘȠȞȖȥȓȟȘȖȎȘȠȖȐțȩȣȕȎȞȭȒȜȐȩȣ ȟȜȟȠȜȭțȖȭ. ǰ ȫȠȜȗ ȞȎȏȜȠȓ, ȖȟȝȜșȪȕȡȭ ȚȓȠȜȒ p-n ȝȓȞȓȣȜȒȎ, ȝȜșȡȥȓțȩ ȘȜțȤȓțȠȞȎȤȖȜțțȩȓ ȝȞȜȢȖșȖ ȏȓȞȖșșȖȭ Ȑ 6H-SiC ȝȞȖ ȞȎȕșȖȥțȩȣ ȞȓȔȖȚȎȣ ȒȖȢȢȡȕȖȖ, ȝȞȓȒȟȠȎȐșȓțțȩȓ țȎ ȞȖȟ. 8.24.
ǼȠȚȓȥȎȓȠȟȭ țȎșȖȥȖȓ țȎ ȘȜțȤȓțȠȞȎȤȖȜțțȩȣ ȝȞȜȢȖșȭȣ ȝȞȖȝȜȐȓȞȣțȜȟȠțȜȑȜȖȜȏȨȓȚțȜȑȜȡȥȎȟȠȘȜȐ. ǽȞȓȒȝȜșȎȑȎȓȠȟȭ, ȥȠȜȚȓȣȎțȖȕȚ ȢȜȞȚȖȞȜȐȎțȖȭȜȏȨȓȚțȩȣȡȥȎȟȠȘȜȐțȎȘȜțȤȓțȠȞȎȤȖȜțțȩȣȞȎȟȝȞȓȒȓșȓțȖȭȣ ȏȓȞȖșșȖȭ, ȏȜȞȎ Ȗ ȟȎȚȜȒȖȢȢȡțȒȖȞȡȬȧȓȑȜ ȡȑșȓȞȜȒȎ ȟȐȭȕȎț ȟ ȚȖȑȞȎȤȖȓȗ ȎȠȜȚȜȐ ȝȜ ȡȑșȓȞȜȒțȩȚ ȐȎȘȎțȟȖȭȚ. ǼȒțȎȘȜ, ȐȐȖȒȡ ȐȩȟȜȘȜȗ ȒȖȢȢȡȕȖȜțțȜȗ ȝȜȒȐȖȔțȜȟȠȖ ȏȓȞȖșșȖȭ ȎȐȠȜȞȩ [24, 302] ȐȩȟȘȎȕȎșȖ ȝȞȓȒȝȜșȜȔȓțȖȓ, ȥȠȜ ȏȓȞȖșșȖȗ ȚȜȔȓȠ ȒȖȢȢȡțȒȖȞȜȐȎȠȪ ȝȜ ȚȓȔȒȜȡȕșȖȭȚ Ȗ ȝȞȜȭȐșȭȠȪ ȒȜțȜȞțȩȓ ȟȐȜȗȟȠȐȎ. ǽȞȜȐȓȒȓțțȩȓ ȫȘȟȝȓȞȖȚȓțȠȎșȪțȩȓȖȟȟșȓȒȜȐȎțȖȭȝȜȒȠȐȓȞȒȖșȖȫȠȜȝȞȓȒȝȜșȜȔȓțȖȓ
ȖȝȜȕȐȜșȖșȖ ȟȒȓșȎȠȪ ȐȩȐȜȒȩ:
•ƊƭțȓȭȐșȭȓȠȟȭȎȚȢȜȠȓȞțȜȗȝȞȖȚȓȟȪȬȐSiC. ǰn-SiC, ȖșȖȐ țȓșȓȑȖȞȜȐȎțțȜȚ ȚȎȠȓȞȖȎșȓ, Ȝț ȐȓȒȓȠ ȟȓȏȭ ȘȎȘ ȎȘȤȓȝȠȜȞ, Ȏ Ȑ ȟȖșȪțȜșȓȑȖȞȜȐȎțțȜȚ p-SiC ȭȐșȭȓȠȟȭ ȘȜȚȝȓțȟȖȞȡȬȧȓȗ ȚȓȔȒȜȡȕȓșȪțȜȗ ȒȜțȜȞțȜȗ ȝȞȖȚȓȟȪȬ;
•țȎșȖȥȖȓȚȓȔȒȜȡȕȓșȪțȜȑȜƊƭ(ȟȕȎȞȭȒȜȚ+ 2) ȭȐșȭȓȠȟȭȝȞȖȥȖțȜȗȎțȜȚȎșȪțȜȐȩȟȜȘȜȑȜȘȜȫȢȢȖȤȖȓțȠȎȒȖȢȢȡȕȖȖƊƭȐSiC (ȜȟȜȏȓțțȜ Ȑ ȜȏȞȎȕȤȎȣ Ȟ-ȠȖȝȎ).
ȋȘȟȝȓȞȖȚȓțȠȎșȪțȜȓȝȜȒȠȐȓȞȔȒȓțȖȓȝȞȖȟȡȠȟȠȐȖȭȚȓȔȒȜȡȕȓșȪțȜȑȜȏȓȞȖșșȖȭȐSiC ȝȜșȡȥȓțȜȐȞȎȏȜȠȓ[282]. ǽȞȖȐȓȒȓțțȩȓțȎȞȖȟ. 8.25 ȕȎȐȖȟȖȚȜȟȠȖ ȘȜțȤȓțȠȞȎȤȖȖ ȏȓȞȖșșȖȭ Ȑ 6H-SiC ȝȜȘȎȕȩȐȎȬȠ, ȥȠȜ ȘȜțȤȓțȠȞȎȤȖȭ ȚȓȔȒȜȡȕȓșȪțȜȑȜ Ɗƭ (ȘȜȠȜȞȩȗ ȝȞȜȭȐșȭȓȠ ȒȜțȜȞțȩȓ ȟȐȜȗȟȠȐȎ) ȟȖșȪțȜ ȕȎȐȖȟȖȠ ȜȠ ȡȞȜȐțȭ șȓȑȖȞȜȐȎțȖȭ ȎȘȤȓȝȠȜȞțȩȚȖ ȝȞȖȚȓȟȭȚȖ Ȗ ȝȞȓȐȩȦȎȓȠ ȡȞȜȐȓțȪ ȞȎȟȠȐȜȞȖȚȜȟȠȖ ȎȘȤȓȝȠȜȞțȜȑȜ Ɗƭ.

194 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.
ǾȖȟ. 8.25. ǵȎȐȖȟȖȚȜȟȠȖȘȜțȤȓțȠȞȎȤȖȖ ȏȓȞȖșșȖȭ Ȑ 6H-SiC ȜȠ
ȠȓȚȝȓȞȎȠȡȞȩ: 1 – ȒȜțȜȞțȜȑȜ Ɗƭ
Ȑ p-6H-SiC (2¸1020 ȟȚ 3); 2 – ȎȘ-
ȤȓȝȠȜȞțȜȑȜ Ɗƭ Ȑ țȓșȓȑȖȞȜȐȎț-
țȜȚ 6H-SiC
ǿȜȑșȎȟțȜ [261], Ȑ ȝȞȖȝȜȐȓȞȣțȜȟȠțȜȗ ȜȏșȎȟȠȖ SiC ȒȖȢȢȡȕȖȭ ȝȞȜȣȜȒȖȠ ȝȜ ȐȎȘȎțȟȖȭȚ ȡȑșȓȞȜȒȎ, Ȏ Ȑ ȜȏȨȓȚțȜȗ – ȝȜ ȚȓȔȒȜȡȕșȖȭȚ,
ȐȐȖȒȓ ȒȐȡȣȕȎȞȭȒțȩȣ ȖȜțȜȐ Ɗƭ+2.
8.5.4.DzȖȢȢȡȕȖȜțțȜȓ șȓȑȖȞȜȐȎțȖȓ șȜȘȎșȪțȩȣ ȜȏșȎȟȠȓȗ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ
ǰ ȞȎȏȜȠȎȣ [24, 301] ȜȠȚȓȥȎȓȠȟȭ, ȥȠȜ ȟȜȕȒȎțȖȓ șȓȑȖȞȜȐȎțțȩȣ șȜȘȎșȪțȩȣ ȜȏșȎȟȠȓȗ ȟȐȭȕȎțȜ ȟ ȠȞȡȒțȜȟȠȪȬ ȢȜȞȚȖȞȜȐȎțȖȭ ȕȎȧȖȠțȜȗ ȚȎȟȘȖ. ǰȝȓȞȐȡȬȜȥȓȞȓȒȪȫȠȜȟȐȭȕȎțȜȟȠȓȚ, ȥȠȜȕȎȧȖȠțȎȭȚȎȟȘȎȒȜșȔțȎȐȩȝȜșțȭȠȪȟȐȜȖȢȡțȘȤȖȖȐȠȓȚȝȓȞȎȠȡȞțȜȚȒȖȎȝȎȕȜțȓȒȖȢȢȡȕȖȖ ȝȞȖȚȓȟȓȗȐSiC (1800 2500)°ǿ. ǸȞȜȚȓȠȜȑȜ, ȒȜșȔțȎ ȏȩȠȪ ȜȏȓȟȝȓȥȓțȎ ȠȓȣțȜșȜȑȖȥțȜȟȠȪ ȓȓ ȝȜșȡȥȓțȖȭ Ȗ ȡȒȎșȓțȖȭ. Dzșȭ ȫȠȜȑȜ ȡȒȜȏȓț ȡȑșȓȞȜȒ, ȢȜȞȚȖȞȡȓȚȩȗ ȝȡȠȓȚ ȜȠȔȖȑȎ ȜȞȑȎțȖȥȓȟȘȜȑȜ ȢȜȠȜȞȓȕȖȟȠȎ. ǰ ȞȎȏȜȠȓ [303] ȖȟȝȜșȪȕȜȐȎșȟȭ ȔȖȒȘȖȗ ȢȜȠȜȞȓȕȖȟȠ Ȃǽ-383, țȎțȜȟȖȚȩȗ ȚȓȠȜȒȜȚȤȓțȠȞȖȢȡȑȖȞȜȐȎțȖȭțȎȜȏȞȎȕȤȩȘȎȞȏȖȒȎȘȞȓȚțȖȭ, ȘȜȠȜȞȩȓ ȝȜȟșȓ ȢȜȠȜșȖȠȜȑȞȎȢȖȖ ȝȜȚȓȧȎșȖȟȪ Ȑ ȐȎȘȡȡȚțȡȬ ȘȎȚȓȞȡ ȟ ȒȎȐșȓțȖȓȚ 5¸10 4 ȚȚ ȞȠ.ȟȠ., țȎȑȞȓȐȎșȖȟȪ ȒȜ ȠȓȚȝȓȞȎȠȡȞȩ 450°ǿ ȟȜ ȟȘȜȞȜȟȠȪȬ 10°ǿ/ȟ Ȗ ȐȩȒȓȞȔȖȐȎșȖȟȪ ȝȞȖ ȫȠȜȗ ȠȓȚȝȓȞȎȠȡȞȓ Ȑ ȠȓȥȓțȖȓ 10 ȚȖț. ǰ ȞȓȕȡșȪȠȎȠȓ ȝșȓțȘȎ ȢȜȠȜȞȓȕȖȟȠȎ ȝȞȓȐȞȎȧȎșȎȟȪ Ȑ ȝșȜȠțȡȬ ȎȚȜȞȢțȡȬ ȝșȓțȘȡ ȡȑșȓȞȜȒȎ ȟ ȠȜȝȜșȜȑȖȥȓȟȘȖȚ ȞȖȟȡțȘȜȚ Ȑ ȠȜȥțȜȟȠȖ ȝȜȐȠȜȞȭȬȧȖȚ ȞȖȟȡțȜȘ ȢȜȠȜȞȓȕȖȟȠȎ ȝȜȟșȓ ȢȜȠȜșȖȠȜȑȞȎȢȖȖ.
ǿȖȟȝȜșȪȕȜȐȎțȖȓȚȠȎȘȜȗȚȎȟȘȖȒȖȢȢȡȕȖȭȜȟȡȧȓȟȠȐșȭșȎȟȪȐ ȑȞȎȢȖȠȜȐȜȚ ȘȜțȠȓȗțȓȞȓ ȟ ȫșȓȚȓțȠȎȞțȩȚ ȏȜȞȜȚ ȝȞȖ țȎȑȞȓȐȓ ȓȑȜ ȫșȓȘȠȞȜțțȩȚ șȡȥȜȚ ȒȜ ȠȓȚȝȓȞȎȠȡȞȩ 1600°ǿ Ȑ ȠȓȥȓțȖȓ 18 ȚȖț. ǽȞȖ ȫȠȜȚ ȑșȡȏȖțȎ ȕȎșȓȑȎțȖȭ șȓȑȖȞȜȐȎțțȩȣ ȟșȜȓȐ ȟȜȟȠȎȐȖșȎ 1.3 ȚȘȚ. ȁȒȎșȓțȖȓ ȡȑșȓȞȜȒțȜȗ ȚȎȟȘȖ ȝȞȜȐȜȒȖșȜȟȪ ȜȘȖȟșȓțȖȓȚ țȎ ȐȜȕȒȡȣȓ
ȅȎȟȠȪ I, DZșȎȐȎ 8 |
195 |
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ȝȞȖ ȠȓȚȝȓȞȎȠȡȞȓȝȜȞȭȒȘȎ600°ǿ. ǸȜțȠȞȜșȪȠȜȝȜșȜȑȖȖ, ȝȞȜȐȓȒȓțțȩȗ
ȟȝȜȚȜȧȪȬ ȡșȪȠȞȎȢȖȜșȓȠȜȐȜȗ ȕȎȟȐȓȠȘȖ, ȝȜȘȎȕȎș țȎșȖȥȖȓ șȬȚȖțȓȟȤȖȞȡȬȧȖȣșȜȘȎșȪțȩȣȜȏșȎȟȠȓȗȐȚȓȟȠȎȣȜȠȟȡȠȟȠȐȖȭ ȡȑșȓȞȜȒțȜȗ ȚȎȟȘȖ ȐȜ ȐȞȓȚȭ ȒȖȢȢȡȕȖȖ.
ǽșȎțȎȞțȩȓ 4H-SiC Ȗ6H-SiC p-n ȒȖȜȒȩ ȟȖȟȝȜșȪȕȜȐȎțȖȓȚ șȜȘȎșȪțȜȗ ȒȖȢȢȡȕȖȖ ȏȜȞȎ, ȏȩșȖ ȖȕȑȜȠȜȐșȓțȩ ȎȐȠȜȞȎȚȖ ȞȎȏȜȠ [285 288]. ǰ ȫȘȟȝȓȞȖȚȓțȠȎȣȖȟȝȜșȪȕȜȐȎșȖȟȪȝȜȒșȜȔȘȖn-6H-SiC Ȗn-4H-SiC (Cree)
ȟȫȝȖȠȎȘȟȖȎșȪțȩȚȖ ȟșȜȭȚȖ, șȓȑȖȞȜȐȎțțȩȓ ȎȕȜȠȜȚ ȟ ȘȜțȤȓțȠȞȎȤȖȓȗ 4.1¸1015 ȟȚ 3. ǽȜȟșȓ ȠȧȎȠȓșȪțȜȗ ȜȥȖȟȠȘȖ ȟ ȤȓșȪȬ ȡȒȎșȓțȖȭ ȜȞȑȎțȖȥȓȟȘȖȣ ȕȎȑȞȭȕțȓțȖȗ Ȗ ȎȒȟȜȞȏȖȞȜȐȎțțȩȣ ȎȠȜȚȜȐ ȚȓȠȎșșȜȐ, țȎ ȝȜȐȓȞȣțȜȟȠȪ țȎțȜȟȖșȟȭ ȝșȜȠțȩȗ ȟșȜȗ ȢȜȠȜȞȓȕȖȟȠȎ Ȗ ȖȟȝȜșȪȕȡȭ ȟȠȎțȒȎȞȠțȡȬȢȜȠȜșȖȠȜȑȞȎȢȖȬ, ȢȜȞȚȖȞȜȐȎșȟȭțȓȜȏȣȜȒȖȚȩȗȞȖȟȡțȜȘ. ǰ ȘȎȥȓȟȠȐȓ ȕȎȧȖȠțȜȗ ȚȎȟȘȖ ȝȞȖ ȒȖȢȢȡȕȖȖ ȏȜȞȎ, ȖȟȝȜșȪȕȜȐȎșȖȟȪ ȝȜșȖȘȞȖȟȠȎșșȖȥȓȟȘȖȓȝșȓțȘȖ, ȢȜȞȚȖȞȡȓȚȩȓȐȣȜȒȓȐȎȘȡȡȚțȜȑȜȜȠȔȖȑȎ ȢȜȠȜȞȓȕȖȟȠȎ. Dzșȭ ȝȞȓȒȜȠȐȞȎȧȓțȖȭ ȟȡȏșȖȚȎȤȖȜțțȜȑȜ ȠȞȎȐșȓțȖȭ, țȎ ȝȜȐȓȞȣțȜȟȠȪ ȟȠȞȡȘȠȡȞȩ ȒȜȝȜșțȖȠȓșȪțȜ țȎțȜȟȖșȟȭ ȡșȪȠȞȎȠȜțȘȖȗ ȟșȜȗ ȢȜȠȜȞȓȕȖȟȠȎ.
ǰȘȎȥȓȟȠȐȓ ȖȟȠȜȥțȖȘȎ ȒȖȢȢȡȕȎțȠȎ ȖȟȝȜșȪȕȜȐȎșȎȟȪ ȟȚȓȟȪ ȏȜȞȎ Ȗ ȝȜȞȜȦȘȎȘȎȞȏȖȒȎȘȞȓȚțȖȭ. DzȖȢȢȡȕȖȭȝȞȜȐȜȒȖșȎȟȪȝȞȖȠȓȚȝȓȞȎȠȡȞȓ 2000°ǿ Ȑ ȠȓȥȓțȖȓ 10 ȚȖțȡȠ, Ȑ ȎȠȚȜȟȢȓȞȓ ȎȞȑȜțȎ ȝȞȖ ȖțȒȡȘȤȖȜțțȜȚ țȎȑȞȓȐȓ ȒȖȢȢȡȕȎțȠȎ Ȑ ȘȐȎȞȤȓȐȜȚ ȘȜțȠȓȗțȓȞȓ. ǽȜȟșȓ ȒȖȢȢȡȕȖȖ ȑȞȎȢȖȠȜȐȎȭ ȚȎȟȘȎ ȡȒȎșȭșȎȟȪ ȠȞȎȐșȓțȖȓȚ Ȑ ȝșȎȕȚȓ ȘȖȟșȜȞȜȒȎ. Dzșȭ ȟȞȎȐțȓțȖȭ ȜȒțȜȐȞȓȚȓțțȜ ȏȩșȎ ȝȞȜșȓȑȖȞȜȐȎțȎ ȝȜȒșȜȔȘȎ SiC ȏȓȕ ȕȎȧȖȠțȜȗ ȚȎȟȘȖ.
ǾȖȟ. 8.26. ǺȜȞȢȜșȜȑȖȭ ȝȜȐȓȞȣțȜȟȠȖ ȝȜȒșȜȔȘȖ SiC ȝȜȟșȓ ȒȖȢȢȡȕȖȖ ȏȜȞȎ ȟ ȕȎȧȖȠțȜȗ ȝșȓțȘȜȗ (Ȏ) Ȗ ȏȓȕ ȕȎȧȖȠțȜȗ ȝșȓțȘȖ (ȏ)

196 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.
ǽȜȟșȓȝȞȜȐȓȒȓțȖȭȒȖȢȢȡȕȖȖȖȟȟșȓȒȜȐȎșȎȟȪȚȜȞȢȜșȜȑȖȭȝȜȐȓȞȣ- țȜȟȠȖȝȜȒșȜȔȘȖȚȓȠȜȒȜȚȎȠȜȚțȜ-ȟȖșȜȐȜȗȚȖȘȞȜȟȘȜȝȖȖ. ǻȎȞȖȟ. 8.26 ȝȞȓȒȟȠȎȐșȓțȩ ǮǿǺ ȖȕȜȏȞȎȔȓțȖȭ ȝȜȐȓȞȣțȜȟȠȖ ȝȜȒșȜȔȘȖ SiC ȝȜȟșȓ ȒȖȢȢȡȕȖȖ ȏȜȞȎ ȟ ȕȎȧȖȠțȜȗ ȝșȓțȘȜȗ (ȞȖȟ. 8.26Ȏ) Ȗ ȏȓȕ ȕȎȧȖȠțȜȗ ȝșȓțȘȖ(ȞȖȟ. 8.26ȏ) țȎȝșȜȧȎȒȘȓȞȎȕȚȓȞȜȚ5×5 ȚȘȚ2. ǻȎȝȜȐȓȞȣțȜȟȠȖ ȜȏȞȎȕȤȜȐ SiC ȏȓȕ ȒȜȝȜșțȖȠȓșȪțȜȗ ȕȎȧȖȠțȜȗ ȚȎȟȘȖ ȝȜȭȐșȭȬȠȟȭ ȞȓȑȡșȭȞțȩȓȏȜȞȜȕȒȩȖȡȐȓșȖȥȖȐȎȓȠȟȭȦȓȞȜȣȜȐȎȠȜȟȠȪ(ȏȜșȓȓ20 țȚ). ȆȓȞȜȣȜȐȎȠȜȟȠȪ ȝȜȐȓȞȣțȜȟȠȖ ȜȏȞȎȕȤȜȐ ȟ ȒȜȝȜșțȖȠȓșȪțȜȗ ȕȎȧȖȠțȜȗ ȚȎȟȘȜȗ Ȑ ȠȓȥȓțȖȓ ȒȖȢȢȡȕȖȖ țȓ ȖȕȚȓțȭșȎȟȪ (1.5 țȚ).
8.6. ǵȎȘșȬȥȓțȖȓ
dzȟșȖ ȟȜȝȜȟȠȎȐȖȠȪ ȫțȓȞȑȓȠȖȥȓȟȘȜȓ ȝȜșȜȔȓțȖȓ ȡȞȜȐțȓȗ Ȑ țȖȔțȓȗ ȝȜșȜȐȖțȓȕȎȝȞȓȧȓțțȜȗȕȜțȩ4ǻȖ6ǻ-SiC (ȠȎȏșȖȤȩ8.1 8.3), ȠȜȚȜȔțȜ ȕȎȚȓȠȖȠȪ, ȥȠȜ ȏȜșȪȦȖțȟȠȐȜ ȡȞȜȐțȓȗ țȎȣȜȒȖȠȟȭ ȐțȡȠȞȖ ȒȐȡȣ ȒȜȟȠȎȠȜȥțȜ ȡȕȘȖȣ ȝȜșȜȟ Ȑ ȕȎȝȞȓȧȓțțȜȗ ȕȜțȓ: Ev +0.5 0.6 ȫǰ (i-ȝȜșȜȟȎ) Ȗ Ev+0.2 0.3 ȫǰ(L-ȝȜșȜȟȎ). ǰțȡȠȞȖȝȓȞȐȜȗȝȜșȜȟȩțȎȣȜȒȖȠȟȭD-ȤȓțȠȞ, i-ȤȓțȠȞȖȡȞȜȐȓțȪȟȘȎțȒȖȭ; ȐțȡȠȞȖȐȠȜȞȜȗ – ȑșȡȏȜȘȖȗȎșȬȚȖțȖȗ, ȡȞȜȐȓțȪȑȎșșȖȭ, L-ȤȓțȠȞ. ȁȞȜȐȓțȪȏȜȞȎȠȎȘȔȓțȎȣȜȒȖȠȟȭȐțȡȠȞȖ(4ǻ) ȖșȖ ȐȏșȖȕȖ ȑȞȎțȖȤȩ (6ǻ) L-ȝȜșȜȟȩ. ǰ ȐȓȞȣțȓȗ ȝȜșȜȐȖțȓ ȕȎȝȞȓȧȓțțȜȗ ȕȜțȩ 4ǻ Ȗ 6ǻ-SiC ȡȞȜȐțȖ ȞȎȟȝȞȓȒȓșȓțȩ ȒȜȟȠȎȠȜȥțȜ ȞȎȐțȜȚȓȞțȜ Ȗ ȘȎȘȖȣ-șȖȏȜȝȜșȜȟ, ȟȜȐȝȎȒȎȬȧȖȣȒșȭȜȏȜȖȣȝȜșȖȠȖȝȜȐ, ȐȩȒȓșȖȠȪțȓȐȜȕȚȜȔțȜ. ǽȜȟȘȜșȪȘȡȝȎȞȎȚȓȠȞȩȜȒțȜȠȖȝțȩȣȤȓțȠȞȜȐ, ȜȏȞȎȕȡȬȧȖȣȟȭ
ȐțȖȔțȓȗ ȝȜșȜȐȖțȓ ȕȎȝȞȓȧȓțțȜȗ ȕȜțȩ ȞȎȕșȖȥțȩȣ ȝȜșȖȠȖȝȜȐ SiC ȏșȖȕȘȖ, ȠȜțȎșȖȥȖȓȝȜȒȜȏțȩȣȝȜșȜȟȚȜȔțȜȝȞȓȒȝȜșȜȔȖȠȪȖȐ ȒȞȡȑȖȣ ȝȜșȖȠȖȝȎȣȘȎȞȏȖȒȎȘȞȓȚțȖȭ. ǰ ȝȜșȪȕȡȫȠȜȑȜȑȜȐȜȞȖȠȟȣȜȒȟȠȐȜȣȎȞȎȘȠȓȞȖȟȠȖȘȖȝȞȜȝȜȞȤȖȜțȎșȪțȜȓȦȖȞȖțȓȕȎȝȞȓȧȓțțȜȗȕȜțȩȟȚȓȧȓțȖȓ ȚȎȘȟȖȚȡȚȜȐȜȟțȜȐțȩȣȝȜșȜȟȋǹȐȞȎȕșȖȥțȩȣȝȜșȖȠȖȝȎȣSiC (ȞȖȟ. 8.5). ǼȏȞȎȕȜȐȎțȖȓ ȠȎȘȖȣ ȝȜșȜȟ ȐțȡȠȞȖ ȕȎȝȞȓȧȓțțȩȣ ȕȜț ȞȎȕșȖȥțȩȣ ȝȜșȖȠȖȝȜȐ SiC ȟȐȖȒȓȠȓșȪȟȠȐȡȓȠ Ȝ țȎșȖȥȖȖ ȤȓțȠȞȜȐ, ȣȎȞȎȘȠȓȞțȩȣ Ȓșȭ SiC Ȑ ȤȓșȜȚ Ȗ ȟȐȭȕȎțțȩȣ ȟ ȐȎșȓțȠțȜȗ ȕȜțȜȗ, ȟȠȞȡȘȠȡȞȎ ȘȜȠȜȞȜȗ
ȐȞȎȕșȖȥțȩȣ ȝȜșȖȠȖȝȎȣ ȏșȖȕȘȎ. ǺȜȔțȜ ȠȎȘȔȓ ȝȞȓȒȝȜșȜȔȖȠȪ, ȥȠȜ ȘȎȔȒȎȭȝȜșȜȟȎȟȐȭȕȎțȎȟțȓȘȖȚ«ȏȎȕȜȐȩȚ», ȟȜȟȠȜȭȧȖȗȖȕȟȜȏȟȠȐȓțțȩȣ ȒȓȢȓȘȠȜȐ, ȤȓțȠȞȜȚ(ȐȝȓȞȐȜȚȟșȡȥȎȓȫȠȜi-ȤȓțȠȞ, ȐȜȐȠȜȞȜȚ – L-ȤȓțȠȞ), ȘȜȠȜȞȩȗ ȚȜȔȓȠ ȐȕȎȖȚȜȒȓȗȟȠȐȜȐȎȠȪ ȟ ȎȠȜȚȎȚȖ ȐȐȜȒȖȚȜȗ ȝȞȖȚȓȟȖ ȟ ȜȏȞȎȕȜȐȎțȖȓȚ ȒȞȡȑȖȣ ȤȓțȠȞȜȐ ȟ ȏșȖȕȘȖȚȖ ȝȎȞȎȚȓȠȞȎȚȖ.
ǸȎȘȜȗȔȓȟȜȏȟȠȐȓțțȩȗȒȓȢȓȘȠȚȜȔȓȠȏȩȠȪȜȟțȜȐțȩȚȫșȓȚȓțȠȜȚ ȝȞȖ ȢȜȞȚȖȞȜȐȎțȖȖ ȒȓȢȓȘȠțȩȣ ȘȜȚȝșȓȘȟȜȐ, ȜȏȞȎȕȡȬȧȖȣ DZȁ Ȑ SiC?
ȅȎȟȠȪ I, DZșȎȐȎ 8 |
197 |
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ǾȖȟ. 8.27. ǵȎȐȖȟȖȚȜȟȠȪ ȘȜțȤȓțȠȞȎȤȖȖ ȡȑșȓȞȜȒțȩȣ ( NVC ) Ȗ ȘȞȓȚ-
țȓȐȩȣ ( NVSi ) ȐȎȘȎțȟȖȗ [223] Ȗ ȟȞȓȒțȭȭ ȘȜțȤȓțȠȞȎȤȖȭ ȑșȡȏȜȘȖȣ ȡȞȜȐțȓȗ (i-, L-, D-ȤȓțȠȞȜȐ) Ȑ ǿȋ ȫȝȖȠȎȘȟȖȎșȪțȩȣ ȟșȜȭȣ Ȑ ȕȎȐȖȟȖȚȜȟȠȖȜȠȟȠȓȝȓțȖȑȓȘȟȎȑȜțȎșȪțȜȟȠȖ ȝȜșȖȠȖȝȎ SiC [221]
ǻȎ ȞȖȟ. 8.27 ȝȞȓȒȟȠȎȐșȓțȎ ȟȞȓȒțȭȭ ȘȜțȤȓțȠȞȎȤȖȭ 3-ȣ ȟȜȏȟȠȐȓțțȩȣ ȒȓȢȓȘȠȜȐ (i-, D- Ȗ L-ȤȓțȠȞȜȐ) Ȑ ȫȝȖȠȎȘȟȖȎșȪțȩȣ ȟșȜȭȣ 6ǻ Ȗ 4ǻ-SiC, ȝȜșȡȥȓțțȩȣȟȡȏșȖȚȎȤȖȜțțȜȗȫȝȖȠȎȘȟȖȓȗ[223]. ǸȎȘȐȖȒțȜȖȕȞȖȟȡțȘȎ, ȖȚȓȓȠȟȭ ȒȜȟȠȎȠȜȥțȜ ȣȜȞȜȦȎȭ ȘȜȞȞȓșȭȤȖȭ ȚȓȔȒȡ ȡȚȓțȪȦȓțȖȓȚ ȘȜțȤȓțȠȞȎȤȖȖ ȡȑșȓȞȜȒțȩȣ ȐȎȘȎțȟȖȗ (VC) ȟ ȡȐȓșȖȥȓțȖȓȚ ȝȞȜȤȓțȠȎ ȑȓȘȟȎȑȜțȎșȪțȜȟȠȖȝȜșȖȠȖȝȎȖȡȚȓțȪȦȓțȖȓȚȘȜțȤȓțȠȞȎȤȖȖȒȎțțȩȣ ȤȓțȠȞȜȐ.
ǰȝȜșȪȕȡ ȠȜȑȜ, ȥȠȜ ȜȟțȜȐțȩȚ ȘȜȚȝșȓȘȟȜȜȏȞȎȕȡȬȧȖȚ ȒȓȢȓȘȠȜȚ
ȐSiC ȭȐșȭȓȠȟȭ ȐȎȘȎțȟȖȭ ȡȑșȓȞȜȒȎ, ȑȜȐȜȞȭȠ Ȗ ȒȎțțȩȓ ȞȎȕșȖȥțȩȣ
ȎȐȠȜȞȜȐ, ȘȜȠȜȞȩȓ ȝȞȓȒȝȜșȎȑȎșȖ ȡȥȎȟȠȖȓ VC Ȑ ȜȏȞȎȕȜȐȎțȖȖ ȞȎȕșȖȥțȩȣ ȤȓțȠȞȜȐ, Ȏ ȠȎȘȔȓ ȟșȖȭțȖȓ ȜȠȒȓșȪțȩȣ ȐȎȘȎțȟȖȗ Ȑ ȡȟȠȜȗȥȖȐȩȓ ȘșȎȟȠȓȞȩ [172, 173]. ǼȠȚȓȠȖȚ, ȥȠȜ ȞȭȒ ȝȞȖȚȓȟȓȗ (Sc, B, Al) ȖȟȝȜșȪȕȡȓȚȩȣ ȝȞȖ ȑȓȠȓȞȜȫȝȖȠȎȘȟȖȖ SiC [212], ȜȏȞȎȕȡȓȠ DZȄ țȎȣȜȒȭȧȖȓȟȭ ȐțȡȠȞȖȜȠȚȓȥȓțțȩȣȐȩȦȓL- Ȗi-ȝȜșȜȟ. ǽȞȓȒșȜȔȓțțȡȬȐ[212] ȚȜȒȓșȪ ȑȓȠȓȞȜȝȜșȖȠȖȝțȜȗȫȝȖȠȎȘȟȖȖ(ȟȚȝ.ȝ. 8.3), ȚȜȔțȜȠȎȘȔȓȞȎȟȟȚȎȠȞȖȐȎȠȪ ȘȎȘ ȠȜ, ȥȠȜ ȘȎȔȒȜȚȡ Ȗȕ ȝȜșȖȠȖȝȜȐ SiC ȟȜȜȠȐȓȠȟȠȐȡȓȠ ȞȎȐțȜȐȓȟțȎȭ ȘȜțȤȓțȠȞȎȤȖȭ ȒȓȢȓȘȠȜȐ (ȐȎȘȎțȟȖȗ ȡȑșȓȞȜȒȎ), ȝȞȖ ȖȕȚȓțȓțȖȖ ȘȜȠȜȞȜȗ ȕȎ ȟȥȓȠ ȒȜȏȎȐșȓțȖȭ ȝȞȖȚȓȟȓȗ ȑȓțȓȞȖȞȡȬȧȖȣ ȖȕȏȩȠȜȥțȩȓ ȒȓȢȓȘȠȩ, șȖȏȜ țȎȜȏȜȞȜȠ ȟȐȭȕȩȐȎȬȧȖȣ ȐȎȘȎțȟȖȖ Ȑ ȘȜȚȝșȓȘȟȩ, ȐȜȕȚȜȔțȎȑȓȠȓȞȜȫȝȖȠȎȘȟȖȭȝșȓțȜȘȝȜșȖȠȖȝȜȐȖȚȓȬȧȖȣ, ȝȜȟȞȎȐțȓțȖȬ
ȟȝȜȒșȜȔȘȜȗ, ȚȓțȪȦȡȬ șȖȏȜ ȏȜșȪȦȡȬ ȟȠȓȝȓțȪ ȑȓȘȟȎȑȜțȎșȪțȜȟȠȖ, ȟȜȜȠȐȓȠȟȠȐȓțțȜ.
ȀȎȘ ȘȎȘ ȝȜȟșȓ ȜȏșȡȥȓțȖȭ Ȗ ȖȚȝșȎțȠȎȤȖȖ țȎȏșȬȒȎșȜȟȪ ȡȐȓșȖȥȓțȖȓȘȜțȤȓțȠȞȎȤȖȗ L- Ȗi-ȤȓțȠȞȜȐ[52, 134, 151] (Ƞ. ȓ. ȝȞȜȖȟȣȜȒȖșȜ ȖȕȚȓțȓțȖȓȞȎȐțȜȐȓȟțȜȗȘȜțȤȓțȠȞȎȤȖȖȐȎȘȎțȟȖȗ) ȠȜȚȜȔțȜȝȞȓȒȝȜșȜȔȖȠȪ[132, 23], ȥȠȜȝȜȒȐȜȕȒȓȗȟȠȐȖȓȚȜȏșȡȥȓțȖȭȖșȖȖȚȝșȎțȠȎȤȖȖ (șȖȏȜ ȒȞȡȑȖȣ ȠȓȣțȜșȜȑȖȥȓȟȘȖȣ ȝȞȖȥȖț) ȐȜȕȚȜȔțȎ ȠȞȎțȟȢȜȞȚȎȤȖȭ

198 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.
ȝȜșȖȠȖȝȎ ȡȔȓ ȐȩȞȎȧȓțțȩȣ ȫȝȖȠȎȘȟȖȎșȪțȩȣ ȟȠȞȡȘȠȡȞ. DzȎțțȜȓ ȝȞȓȒȝȜșȜȔȓțȖȓ ȟȜȑșȎȟȡȓȠȟȭ ȟ ȞȓȕȡșȪȠȎȠȎȚȖ ȞȎȏȜȠȩ [224] ȝȜȟȐȭȧȓțțȜȗ ȖȟȟșȓȒȜȐȎțȖȬ ȒȓȑȞȎȒȎȤȖȖ 6H-SiC ȟȖțȖȣ ȟȐȓȠȜȒȖȜȒȜȐ ȝȜȒ ȐȜȕȒȓȗȟȠȐȖȓȚ ȝȞȭȚȜȑȜȠȜȘȎ, ȑȒȓȏȩșȜȜȏțȎȞȡȔȓțȜ, ȥȠȜȐȒȓȑȞȎȒȖȞȜȐȎȐȦȖȣ ȟȠȞȡȘȠȡȞȎȣ ȝȜȭȐȖșȖȟȪ ȐȘșȬȥȓțȖȭ ȝȜșȖȠȖȝȎ 3ǿ.
ȀȎȘȖȚ ȜȏȞȎȕȜȚ, ȝȞȖȐȓȒȓțțȩȗ ȎțȎșȖȕ șȖȠȓȞȎȠȡȞțȩȣ ȖȟȠȜȥțȖȘȜȐ ȝȜȘȎȕȩȐȎȓȠ ȕțȎȥȖȠȓșȪțȜȓ ȐșȖȭțȖȓ, ȘȜȠȜȞȜȓ ȟȜȏȟȠȐȓțțȩȓ ȒȓȢȓȘȠȩ ȘȞȖȟȠȎșșȖȥȓȟȘȜȗ ȞȓȦȓȠȘȖ SiC ȜȘȎȕȩȐȎȬȠ ȘȎȘ țȎ ȢȜȞȚȖȞȜȐȎțȖȓ ȑșȡȏȜȘȖȣ ȤȓțȠȞȜȐ (Ȗ, ȟȜȜȠȐȓȠȟȠȐȓțțȜ, țȎ ȝȞȜȤȓȟȟȩ ȖȕșȡȥȎȠȓșȪțȜȗ Ȗ ȏȓȕȖȕșȡȥȎȠȓșȪțȜȗ ȞȓȘȜȚȏȖțȎȤȖȖ) ȠȎȘ Ȗ țȎ ȟȐȜȗȟȠȐȎ ȟȎȚȖȣ ȫȝȖȠȎȘȟȖȎșȪțȩȣȟșȜȓȐ – ȡȞȜȐȓțȪȖȣșȓȑȖȞȜȐȎțȖȭȖȝȜșȖȠȖȝțȡȬȜȒțȜȞȜȒțȜȟȠȪ. DzȓȠȎșȪțȜȓȖȟȟșȓȒȜȐȎțȖȓȢȎȘȠȜȞȜȐ, ȜȝȞȓȒȓșȭȬȧȖȣȝȞȜȤȓȟȟȩȜȏȞȎȕȜȐȎțȖȭȒȓȢȓȘȠȜȐȖȖȣȐȕȎȖȚȜȒȓȗȟȠȐȖȭȒȞȡȑȟȒȞȡȑȜȚȖȎȠȜȚȎȚȖȝȞȖȚȓȟȓȗ, ȝȜȕȐȜșȖȠ ȟȡȧȓȟȠȐȓțțȜ ȡșȡȥȦȖȠȪ ȝȎȞȎȚȓȠȞȩ ȝȞȖȏȜȞȜȐ țȎ ȜȟțȜȐȓ SiC Ȗ ȝȜȕȐȜșȖȠ ȘȎȞȏȖȒȡ ȘȞȓȚțȖȭ țȎȞȭȒȡ ȟ Si Ȗ GaAs ȕȎțȭȠȪ ȜȒțȜ Ȗȕ ȤȓțȠȞȎșȪțȩȣ ȚȓȟȠ Ȑ ȟȜȐȞȓȚȓțțȜȗ ȝȜșȡȝȞȜȐȜȒțȖȘȜȐȜȗ ȫșȓȘȠȞȜțȖȘȓ.
ȅȎȟȠȪ I, DZșȎȐȎ 8 |
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ǹȖȠȓȞȎȠȡȞȎ
1.ǯȓȞȚȎț ǹ.ǿ., ǹȓȏȓȒȓȐ Ǯ.Ǯ. dzȚȘȜȟȠțȎȭ ȟȝȓȘȠȞȜȟȘȜȝȖȭ ȑșȡȏȜȘȖȣ ȤȓțȠȞȜȐ Ȑ ȝȜșȡȝȞȜȐȜȒțȖȘȎȣ. – ǹȓțȖțȑȞȎȒ: ǻȎȡȘȎ, 1981. – 176 ȟ.
2.Bockstede M., Mattausch A., Pankratov O. Solibility of nitrogen and phosphorus in 4H-SiC: A theoretical study // Appl.Phys. Lett. – 2004. – 85., N1. – P. 58–60.
3.Rao M.V., Tucker J.B., Ridgway M.C., Holland O.W., Papanicolau N., Mittereder J. Ion-implantation in bulk semi-insulating 4H-SiC // J. Appl. Phys. – 1999. – 86., N2. – P. 752–758.
4.Capano M.A., Cooper J.A.Jr., Melloch M.R., Saxler A., Mitchel W.C. Ionization energies and electron mobilities in phosphorusand nitrogen implanted 4H-silicon carbide // J. Appl. Phys. – 2000. – 87., N12. – P. 8773–8777.
5.Woodbery ǻ.ǻ., Ludwig G.W. Electron Spin Resonance studies in SiC // Phys. Rev. – 1961. – 124., N4. – P. 1083–1089.
6.Ikeda I, Matsunami H., Tanaka T. Site effect on the impurity levels in 4H, 6H, 15R-SiC // Phys. Rev. ǰ. – 1980. – 22, N6. –
P.2842–2854.
7.ǮșȓȘȟȓȓțȘȜ Ǻ.ǰ., ǵȎȏȞȜȒȟȘȖȗ Ǯ.DZ., ȀȖȚȜȢȓȓȐ Ǻ.ǽ. ȀȓȞȚȖȥȓȟȘȎȭ ȖȜțȖȕȎȤȖȭ țȓȫȘȐȖȐȎșȓțȠțȩȣ ȟȜȟȠȜȭțȖȗ ȎȠȜȚȜȐ ȎȕȜȠȎ Ȑ 6H-SiC // ǽȖȟȪȚȎ Ȑ ǴȀȂ. – 1985. – 11, Ɋ16. – C. 1018–1022.
8.Kolabukhova E.N., Lukin S.N. ESR Spectrum of Nitrogen in 6HSiC in the ground and Exited States // Mat.Sci. Forum. – 2000. – 338–342. – P. 791–794.
9.Suttrop W., Pensl G., Choyke W.J., Steine R., Leibenzeder S. Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbide // J. Appl. Phys. – 1992. – 72, N7. –
P.3708–3713.
10.Gotz W., Schoner A., Pensl G., Suttrop W., Choyke W.J., Steine R., Leibenzeder S. Nitrogen donors in 4H-silicon carbide //
J.Appl. Phys. – 1993. – 73. – P. 3332–3338.

200 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.
11.Chen C.Q., Zeman J., Engelbrecht F., Peppermuller C., Helbig R., Chen Z.H., Martinez G. Photothermal ionization spectroscopy of shallow nitrogen donor states in 4H-SiC // J.Appl.Phys. – 2000. – 87, N8. – P. 3800–3805.
12.ǸȎȞȏȖȒ ȘȞȓȚțȖȭ / ǽȜȒ ȞȓȒ. DZ.ȃȫțȖȦȎ Ȗ Ǿ.ǾȜȭ. – Ǻ.: ǺȖȞ, 1972. – 386 ȟ.
13.Kuwabara H., Yamanaka K., Yamada S. Donor-acceptor pair emission from C-SiC doped with gallium // Phys. Stat. Solidi A. – 1976. – 37, N2. – P. K157 K161.
14.Dean P.J., Choyke W.J., Patric L. The location and shape of the conduction band minima in cubic silicon carbide // J. Lumin. – 1977. – 10, N3. – P. 299–314.
15.ǹȓȏȓȒȓȐ Ǯ.Ǯ., ǮȑȞȖțȟȘȎȭ ǻ.ǰ., ǮȏȞȎȚȜȐ ǽ.ǹ., ǸȜȕȡȏ ǰ.Ƕ., ǼȑȎțȓȟȭț DZ.Ǯ., ǿȜȞȜȘȖț ǹ.Ǻ., ȅȓȞțȭȓȐ Ǯ.ǰ., ȆȎȚȦȡȞ Dz.ǰ. DZȎșȪȐȎțȜȚȎȑțȖȠțȩȓ ȟȐȜȗȟȠȐȎ ȫȝȖȠȎȘȟȖȎșȪțȩȣ ȝșȓțȜȘ 3C-SiC ȐȩȞȎȧȓțțȩȣ țȎ ȜȟțȜȐȓ ȝȜȒșȜȔȓȘ ȑȓȘȟȎȑȜțȎșȪțȜȑȜ SiC // ǽȖȟȪȚȎ
ȐǴȀȂ. – 2007. – 33, Ɋ24 – C. 8–15.
16.ǹȓȏȓȒȓȐ Ǯ.Ǯ., ǮȏȞȎȚȜȐ ǽ.ǹ., ǮȑȞȖțȟȘȎȭ ǰ.ǻ., ǸȜȕȡȏ ǰ.Ƕ., ǸȡȕțȓȤȜȐ Ǯ.ǻ., ǹȓȏȓȒȓȐ ǿ.ǽ., ǼȑȎțȓȟȭț DZ.Ǯ., ȅȓȞțȭȓȐ Ǯ.ǰ., ȆȎȚȦȡȞ Dz.ǰ., ȀȞȓȑȡȏȜȐȎ Ǯ.ǿ., ǿȘȐȜȞȤȜȐȎ Ǻ.Ǽ. ǽȓȞȓȣȜȒ Țȓ- ȠȎșș–ȖȕȜșȭȠȜȞ Ȑ ȫȝȖȠȎȘȟȖȎșȪțȩȣ ȝșȓțȘȎȣ n-3C-SiC // ȂȀǽ. – 2009. – 43, Ɋ3. – C. 337–341.
17.Lebedev A.A., Abramov P.L., Agrinskaya N.V., Kozub V.I., Lebedev S.P., Oganesyan G.A., Tregubova A.S., Shamshur D.V., Skvortsova M.O. Metal-insulator transition in n-3C-SiC epitaxial Àlms // J.Appl.Phys. – 2009. – 105, N2. – Ǿ. 023706.
18.DZȎțȠȚȎȣȓȞ ǰ.Ȃ. ȋșȓȘȠȞȜțȩ Ȑ țȓȡȝȜȞȭȒȜȥȓțțȩȣ ȟȞȓȒȎȣ. – Ǻ.:
ȂȖȕȚȎȠșȖȠ, 2003. – 176 ȟ.
19.ǰȓȗțȑȓȞ Ǯ.Ƕ., ǵȎȏȞȜȒȟȘȖȗ Ǯ.DZ., ȀȖȟțȓȘ Ȁ.ǰ., ǺȜȣȜȐ dz.ǻ. ǼȟȜȏȓțțȜȟȠȖ ȫșȓȘȠȞȜțțȜȑȜ ȝȎȞȎȚȎȑțȖȠțȜȑȜ ȞȓȕȜțȎțȟȎ Ȑ 4H-SiC
ȐȜȏșȎȟȠȖȢȎȕȜȐȜȑȜȝȓȞȓȣȜȒȎȖȕȜșȭȠȜȞ–ȚȓȠȎșș. I. ȋȢȢȓȘȠȩȟȝȖțȜȐȜȑȜ ȐȕȎȖȚȜȒȓȗȟȠȐȖȭ // ȂȀǽ. – 2003. – 37, Ɋ7. – C. 874–882.
20.ǰȓȗțȑȓȞ Ǯ.Ƕ., ǵȎȏȞȜȒȟȘȖȗ Ǯ.DZ., ȀȖȟțȓȘ Ȁ.ǰ., ǺȜȣȜȐ dz.ǻ. ǼȟȜȏȓțțȜȟȠȖ ȫșȓȘȠȞȜțțȜȑȜ ȝȎȞȎȚȎȑțȖȠțȜȑȜ ȞȓȕȜțȎțȟȎ Ȑ 4H-SiC
ȐȜȏșȎȟȠȖ ȢȎȕȜȐȜȑȜ ȝȓȞȓȣȜȒȎ ȖȕȜșȭȠȜȞ–ȚȓȠȎșș. II. ǮțȎșȖȕ ȦȖ-
ȞȖțȩ Ȗ ȢȜȞȚȩ șȖțȖȗ // ȂȀǽ. – 2004. – 38, Ɋ7. – C. 816–821.
ȅȎȟȠȪ I, DZșȎȐȎ 8 |
201 |
|
|
21.Troffer Th., Gotz W., Schoner A., Pensl G., Devaty R.P., Choyke W.J. Hall effect and infrared absorption measurements on nitrogen donors in 15R // Inst. Phys. Conf. Ser. – 1994. – 137. – P. 173–176.
22.Nikolaev E., Nikitina I.P., Dmitriev V.A. Highly nitrogen doped 3C-SiC grown by liquid phase epitaxy // Inst. Phys. Conf. Ser. – 1996. – 142. – P. 125–128.
23.ǹȓȏȓȒȓȐ Ǯ.Ǯ. ȄȓțȠȞȩ ȟ ȑșȡȏȜȘȖȚȖ ȡȞȜȐțȭȚȖ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚ-
țȖȭ. ǼȏȕȜȞ // ȂȀǽ. – 1999. – 33, Ɋ2. – C. 129–155.
24.ǰȜȒȎȘȜȐ Ȍ.Ǯ., ǹȜȚȎȘȖțȎ DZ.Ǯ., ǺȜȣȜȐ dz.ǻ., ǼȒȖțȑ ǰ.DZ., ǾȎȒȜȐȎțȜȐȎ dz.Ƕ. ǯȓȞȖșșȖȗ ȘȎȘ ȒȜțȜȞțȎȭ ȝȞȖȚȓȟȪ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ // ȂȀȀ. – 1978. – 20, Ɋ2. – C. 448–451.
25.Euwarage Ǯ.Ǽ., Smith S.R., Mitchel W.ǿ. Shallow and deep levels in n-type 4H-SiC // J. Appl. Phys. – 1996. – 79, N10. – P. 7726–7730.
26.Dean P.J., Hartman R.L. Magneto-Optical Properties of the Dominate Bound Exiton in undoped 6H-SiC // Phys. Rev. ǰ. – 1972. – 5, N12. – P. 4911–4924.
27.Camassel J., Juillaguet S., Zielinski M., Balloud C. Application of LTPL Investigation Methods to CVD-Grown SiC // Chem.Vap. Deposition. – 2006. – 12, N8. – P. 549–556.
28.ǯȎȞȎțȜȐǽ.DZ., ǯȓȞǯ.ȍ., DZȜȒȖȟȜȐǼ.ǻ., ǶșȪȖțǶ.ǰ., ǶȜțȜȐǮ.ǻ., ǺȜȣȜȐ dz.ǻ., ǺȡȕȎȢȎȞȜȐȎ Ǻ.ǰ., ǸȎșȖȠȓȓȐȟȘȖȗ Ǯ.Ǹ., ǸȎșȖȠȖȓȓȐȟȘȖȗ Ǻ.Ǯ., ǸȜȝȪȓȐ ǽ.ǿ. ǵȜțȒȖȞȜȐȎțȖȓ ȐȜșțȜȐȜȗ ȢȡțȘȤȖȖ ȚȓșȘȖȣ ȒȜțȜȞȜȐ Ȗ ȎȘȤȓȝȠȜȞȜȐ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ Ȗ ȘȞȓȚțȖȖ ȝȡȠȓȚ ȖȟȟșȓȒȜȐȎțȖȭ ȘȞȖȟȠȎșșȜȐ ȟ ȖȕȚȓțȓțȩȚ ȖȕȜȠȜȝțȩȚ ȟȜȟȠȎȐȜȚ ȚȓȠȜȒȜȚ ȝȎȞȎȚȎȑțȖȠțȜȑȜ ȞȓȕȜțȎțȟȎ // ȂȀȀ. – 2005. –
47, Ȑȩȝ. 12. – C. 2127–2141.
29.Daal Van H., Knippenberg W.F., Wassher J.D. On the electronic conduction of B-SiC crystals between 300 and 1500 K // J. Phys. Chem.Sol. – 1963. – 24, N1. – P. 109–127.
30.ǹȜȚȎȘȖțȎ DZ.Ǯ., ǰȜȒȎȘȜȐ Ȍ.Ǯ., ǺȜȣȜȐ dz.ǻ., ǼȒȖțȑ ǰ.DZ., ȃȜșȡȭțȜȐ DZ.Ȃ. ǿȞȎȐțȖȠȓșȪțȩȓ ȖȟȟșȓȒȜȐȎțȖȭ ȠȞȓȣ ȝȜșȖȠȖȝȜȐ ȘȎȞ-
ȏȖȒȎ ȘȞȓȚțȖȭ // ȂȀȀ. – 1970. – 12, Ɋ10. – C. 2918–2922.

202 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.
31.ǸȜȒȞȎȡ ǻ.ǰ., ǺȎȘȎȞȜȐ ǰ.ǰ. ǶȟȟșȓȒȜȐȎțȖȓ ȑȜșȡȏȜȗ șȬȚȖțȓȟȤȓțȤȖȖ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ ȟ ȝȞȖȚȓțȓțȖȓȚ ȖȜțțȜȗ ȖȚȝșȎțȠȎ-
ȤȖȖ ȎșȬȚȖțȖȭ Ȗ ȎȕȜȠȎ. – ȂȀǽ. – 1977. – 11, Ɋ5. – C. 969–975.
32.ǺȜȣȜȐ dz.ǻ., ȁȟȚȎțȜȐ Ǻ.Ǻ., ȌșȒȎȦȓȐ DZ.Ȃ., ǺȎȣȚȡȒȜȐ ǯ.ǿ. ǹȓȑȖȞȜȐȎțȖȓ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ ȫșȓȚȓțȠȎȚȖ ȠȞȓȠȪȓȗ ȑȞȡȝȝȩ Ȑ ȝȞȜȤȓȟȟȓ ȞȜȟȠȎ ȘȞȖȟȠȎșșȜȐ Ȗȕ ȑȎȕȜȐȜȗ ȢȎȕȩ // ǶȕȐ.Ǯǻ ǿǿǿǾ. ǻȓȜȞȑȎțȖȥȓȟȘȖȓ ȚȎȠȓȞȖȎșȩ. – 1984. – 20, Ɋ8. – C. 1383–1386.
33.Matsuura H., Komeda M., Kagamihara S., Iwata H., Ishihara R., Hatakeyama T., Watanabe T., Kojima K., Shinohe T., Arai K. Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers // J. Appl. Phys. – 2004. – 96, N5. – P. 2708–2715.
34.Schoner Ǯ., Nordell N., Rottner K., Helbig R., Pensl G. Dependence of the aluminum ionization energy on doping concentration and compensation in 6H SiC // Inst. Phys. Conf. Ser. – 1996. – 142. – P. 493–496.
35.ȆȘșȜȐȟȘȖȗ ǯ.Ƕ., ȋȢȞȜȟ Ǯ.ǹ. ǿȠȞȡȘȠȡȞȎ ȝȞȖȚȓȟțȜȗ ȕȜțȩ ȟșȎȏȜșȓȑȖȞȜȐȎțțȩȣȝȜșȡȝȞȜȐȜȒțȖȘȜȐ. ǼȏȕȜȞ// ȂȀǽ. – 1980. – 14,
Ɋ5. – C. 825–859.
36.Lebedev A.A., Bogdanova E.V., Abramov P.L., Lebedev S.P., Nel’son D.K., Oganesyan G.A., Tregubova A.S., Yakimova R. Highly doped p-3C-SiC on 6H-SiC substrates // Semicond. Sci. Technol. – 2008. – 23, N7. – P. 075004.
37.Yamanaka M., Daimon H., Sakuma E., Misawa S., Yoshida S. Temperature dependence of electrical properties of n- and p-type 3C-SiC // J.Appl.Phys. – 1987. – 61, N2. – P. 599–513.
38.ǶȐȎțȜȐ ǽ.Ǯ., ǺȜȞȜȕȓțȘȜ ȍ.ǰ., ǿȡȐȜȞȜȐ Ǯ.ǰ. ǶȟȟșȓȒȜȐȎțȖȓ ȑșȡȏȜȘȖȣ ȤȓțȠȞȜȐ Ȑ 6H-SiC p-n ȝȓȞȓȣȜȒȎȣ, ȝȜșȡȥȓțțȩȣ ȖȜț-
țȜȗ ȖȚȝșȎțȠȎȤȖȓȗ // ȂȀǽ. – 1985. – 19, Ɋ8. – C. 1430–1433.
39.Kuznetsov N.I., Zubrilov A.S. Deep centers and electroluminescence in 4H-SiC diodes with p-type base region // Mat. Sci. Eng. B. – 1995. – 29, N1–3. – P. 181–184.
40.ǮțȖȘȖț Ǻ.Ǻ., ǽȜȝȜȐ Ƕ.ǰ., ǿȓȐȎȟȠȪȭțȜȐ ǰ.dz., ǿȩȞȘȖț Ǯ.ǹ., ǿȡȐȜȞȜȐ Ǯ.ǰ., ȅȓșțȜȘȜȐ ǰ.dz. ǰȩȝȞȭȚȖȠȓșȪțȩȗ ȒȖȜȒ țȎ ȜȟțȜȐȓ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ // ǽȖȟȪȚȎ Ȑ ǴȀȂ. – 1984. – 10, Ɋ7. – C. 1056–1058.
ȅȎȟȠȪ I, DZșȎȐȎ 8 |
203 |
|
|
41.KalininaE.,KholujanovG.,SolovievV.,Strel’chukA.,Zubrilov A., Kossov V., Yafaev R., Kovarski A.P., Hallen A., Konstantinov A.,
Karlsson S., Adas C., Rendakova S., Dmitriev V. High-doze Al – implanted 4H-SiC p+-n-n+ junctions // Appl.Phys.Lett. – 2000. – 77, N19. – P. 3051–3053.
42.Giannazzo F., Roccaforte F., Raineri V. Acceptor, compensation, and mobility proÀles in multiple Al implanted 4H-SiC // Appl. Phys.Lett. – 2007. – 91, N20. – P. 202104.
43.Heera V., Pezold J., Ning X., Pirouz P. High dose co-implanta- tion of aluminium and nitrogen in 6H-silicon carbide // Inst. Phys. Conf. Ser. – 1996. – 142. – P. 509–512.
44.Clemen L.L., Devaty R.P., Choyke W.J., Powel J.A., Larkin D.J., Edmond J.A., Burk A.A. Recent developments in the characterization of the aluminum center in 3C, 4H, and 15R SiC // Inst Phys. Conf. Ser. – 1994. – 137. – P. 297–300.
45.ǰȜȒȎȘȜȐ Ȍ.Ǯ., ǹȜȚȎȘȖțȎ DZ.Ǯ., ǺȜȣȜȐ dz.ǻ. ǻȓȟȠȓȣȖȜȚȓȠȞȖȭ Ȗ ȝȜșȖȠȖȝȖȕȚ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ // ȂȀȀ. – 1982. – 24, Ɋ8. – C. 1377–1383.
46.Andreev Ǯ.N., Anikin M.M., Lebedev A.A., Poletaev N.K., Strel’chuk A.M., Syrkin A.L., Chelnokov V.E. A relationship between defect electroluminescence and deep centers in 6H-SiC // Inst. Phys. Conf. Ser. – 1994. – 137. – P. 271–274.
47.ǰȓȗțȑȓȞ Ǯ.Ƕ., ǰȜȒȎȘȜȐ Ȍ.Ǯ., ǸȜȕșȜȐ Ȍ.Ƕ., ǹȜȚȎȘȖțȎ DZ.Ǯ., ǺȜȣȜȐ dz.ǻ., ǼȒȖțȑ ǰ.DZ., ǿȜȘȜșȜȐ ǰ.Ƕ. ǽȞȖȚȓȟțȩȓ ȟȜȟȠȜȭțȖȭ ȏȜȞȎ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ // ǽȖȟȪȚȎ Ȑ ǴȀȂ. – 1980. – 6, Ɋ21. – C. 1319–1323.
48.Balandovich V.S., Mokhov E.N. Two deep boron levels in silicon carbide: dependence on growth conditions and nitrogen concentration. Transac. Second Int. High Temp. Electron. Conf. Charlotte (NC, USA), 5–10, 1994. – 2. – P. 181–186.
49.ǰȖȜșȖț dz.ȋ., ȃȜșȡȭțȜȐ DZ.Ȃ. ȋȘȟȠȞȎȘȤȖȭ țȜȟȖȠȓșȓȗ ȕȎȞȭȒȎ ȫșȓȘȠȞȖȥȓȟȘȖȚ ȝȜșȓȚ Ȗ ȚȓȣȎțȖȕȚ ȫșȓȘȠȞȜșȬȚȖțȓȟȤȓțȤȖȖ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ // ȂȀȀ. – 1966. – 8, Ɋ11. – C. 3395–3397.
50.Ortolland S., Raynaud C., Chante J.P., Locatelli M.L., Andreev A.N.,
Lebedev A.A., Rastegaeva M.G., Syrkin A.L., Savkina N.S., Chelnokov V.E. Effect of boron diffusion on high-voltage behavior of 6H-SiC p+-n- n+ structures // J. Appl. Phys. – 1996. – 80, N9. – P. 5464–5468.

204 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.
51.Phelps G.J., Wrigth N.G., Chester E.G., Jonson C.M., O’Neill A.G., Ortolland S., Horsfall A., Vassilevski K.V., Gwilliam R.M., Coleman P.G., Burrows C.P. Enhanced nitrogen diffusion in 4H-SiC // Appl.Phys.Lett. – 2002. – 80, N2. – P. 228–230.
52.ǮțȖȘȖț Ǻ.Ǻ., ǹȓȏȓȒȓȐ Ǯ.Ǯ., ǿȩȞȘȖț Ǯ.ǹ., ǿȡȐȜȞȜȐ Ǯ.ǰ. ǶȟȟșȓȒȜȐȎțȖȓ ȑșȡȏȜȘȖȣ ȡȞȜȐțȓȗ Ȑ SiC ȚȓȠȜȒȎȚȖȓȚȘȜȟȠțȜȗ ȟȝȓȘ-
ȠȞȜȟȘȜȝȖȖ // ȂȀǽ. – 1985. – 15, Ɋ1. – C. 114–117.
53.Gao Y., Soloviev S.I., Sudarshan T.S. Investigation of boron diffusion in 6H-SiC // Appl.Phys.Lett. – 2003. – 83, N5. – P. 905–907.
54.Anikin M.M., Lebedev A.A., Poletaev N.K., Strel’chuk A.M., Syrkin A.L., Chelnokov V.E. Deep centers and blue-green electroluminescence in 4H-SiC // Inst. Phys. Conf. Ser. – 1994. – 137, Chap. 6. – P. 605–607.
55.ǶȐȎțȜȐ ǽ.Ǯ., DZȞȓȣȜȐ Ƕ.ǰ., ǶșȪȖțȟȘȎȭ ǻ.Dz., ǿȎȚȟȜțȜȐȎ Ȁ.ǽ., ǽȜȠȎȝȜȐ Ǯ.ǿ. ǰȩȟȜȘȜȐȜșȪȠțȩȓ (1800 ǰ) ȝșȎțȎȞțȩȓ Ȟ-n ȝȓȞȓȣȜȒȩ țȎ ȜȟțȜȐȓ 4ǻ-SiC ȟȝșȎȐȎȬȧȖȚȖ ȜȣȞȎțțȩȚȖ ȘȜșȪȤȎȚȖ //
ȂȀǽ. – 2009. – 43, Ɋ4. – C. 527–530.
56.ǹȓȏȓȒȓȐ Ǯ.Ǯ., ǽȜșȓȠȎȓȐ ǻ.Ǹ. DZșȡȏȜȘȖȓ ȤȓțȠȞȩ Ȗ ȫșȓȘȠȞȜșȬȚȖțȓȟȤȓțȤȖȭ șȓȑȖȞȜȐȎțțȩȣ ȏȜȞȜȚ 4H-SiC p-n ȟȠȞȡȘȠȡȞ //
ȂȀǽ. – 1996. – 30, Ɋ3. – C. 427–431.
57.ǸȜțȟȠȎțȠȖțȜȐ Ǯ.Ǽ. Ǽ ȝȞȖȞȜȒȓ ȠȜȥȓȥțȩȣ ȒȓȢȓȘȠȜȐ, ȑȓțȓȞȖȞȡȓȚȩȣ ȝȞȖ ȒȖȢȢȡȕȖȖ ȎȘȤȓȝȠȜȞțȩȣ ȝȞȖȚȓȟȓȗ Ȑ ȘȎȞȏȖȒȓ ȘȞȓȚ-
țȖȭ // ȂȀǽ. – 1992. – 26, Ɋ2. – C. 270–279.
58.Janson M.S., Linnarson M.K., Hallen A., Svensson B.G., Nordel N., Bleichner H. Transient enhanced diffusion of implanted boron in 4H-silicon carbide // Appl.Phys.Lett. – 2000. – 76, N11. – P. 1434–1436.
59.Laube M., Pensl G., Itoh H. Suppressed diffusion of implanted boron in 4H-SiC // Appl.Phys.Lett. – 1999. – 74, N16. – P. 2292–2294.
60.Bracht H., Stolwijk N.A., Laube M., Pensl G. Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism // Appl. Phys.Lett. – 2000. – 77, N20. – P. 3188–3190.
61.Bolotnikov A.V., Muzykov P.G., Sudarshan T.S. Investigation of two-branch boron diffusion from vapor phase in n-type 4H-SiC // Appl.Phys.Lett. – 2008. – 93, N5. – 052101.
ȅȎȟȠȪ I, DZșȎȐȎ 8 |
205 |
|
|
62.Lebedev A.A. Deep levels defects in silicon carbide, Intern. // J. High Speed Electronics Systems. – 2006. – 16, N3. – P. 779–823.
63.Baranov P.G., Mokhov E.N. Electron paramagnetic resonance of deep boron in SiC // Inst. Phys. Conf. Ser. – 1996. – 142. – P. 293–296.
64.Frank T., Troffer T., Pensl G., Nordell N., Karlson S., Schoner A. Incorporation of the D-centr in SiC Controlled either by Coim- plantation of Si/B and C/B or by Site-Competition Epitaxy // Mat. Sci. Forum. – 1998. – 264–268. – P. 681–684.
65.ǰȜȒȎȘȜȐ Ȍ.Ǯ., ǹȜȚȎȘȖțȎ DZ.Ǯ., ǺȜȣȜȐ dz.ǻ., ǾȎȚȚ Ǻ.DZ., ǿȜȘȜșȜȐ ǰ.Ƕ. ǰșȖȭțȖȓ ȡȟșȜȐȖȗ ȞȜȟȠȎ țȎ ȠȓȞȚȖȥȓȟȘȡȬ ȟȠȎȏȖșȪ-
țȜȟȠȪ ȒȓȢȓȘȠțȜȗ ȫșȓȘȠȞȜșȬȚȖțȓȟȤȓțȤȖȖ ȟȜ ȟȝȓȘȠȞȜȚ D1 Ȑ ȜȏșȡȥȓțțȜȚ țȓȗȠȞȜțȎȚȖ 6H-SiC // ȂȀǽ. – 1986. – 20, Ɋ12. –
C. 2153–2157.
66.Van Duijn-Arnold A., Moi J., Verberk R., Schmidt J., Mokhov E.N., Baranov P.G. Spatial distribution of the electronic wave function of the shallow boron acceptor in 4Hand 6H-SiC // Phys.Rew. B. – 1999. – 60, N23. – P. 15829–15847.
67.Jang S., Kimoto T., Matsunami H. Deep levels in 6H-SiC wafers and step-controlled epitaxial layers // Appl. Phys. Lett. – 1994. – 65, N5. – P. 581–583.
68.Mazzola M.S., Saddow S.E., Neudeck P.G., Lakdawala V.K., We S. Observation of the D-centre in 6H-SiC p-n diodes grown by chemical vapor deposition // Appl. Phys. Lett. – 1994. – 64, N20. – P. 2730–2733.
69.Vodakov Yu.A., Lomakina G.A., Mokhov E.N., Radovanova E.I., Sokolov V.I., Usmanova M.M., Yuldashev G.F., Makhmudov B.S. Silicon Carbide Doped with Gallium // Phys. Stat. Sol. A. – 1976. – 35, N1. – P. 37–42.
70.Troffer T., Pensi G., Schoner A., Henry A., Hallin C., Kordina O., Janzen E. Electrical Characterization of the Gallium Acceptor
in 4Hand 6H-SiC // Mat. Sci. Forum. – 1998. – 264–268. –
P. 557–560.
71.Gong M., Fung S., Beling C.D., Braner G., Wirth H., Skorupa W. Gallium implantation induced deep levels in n-type 6H-SiC // J.Appl.Phys. – 1999. – 85, N1. – P. 105–107.

206 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.
72.Henry A., Hallin C., Ivanov I.G., Beigman J.P., Kordina O., Janzen E. Ga bound exitons in 3C, 4H and 6H-SiC // Inst. Phys. Conf. Ser. – 1996. – 142. – P. 381–384.
73.Lebedev A.A. Deep-level defects in SiC material and device-
sin // Silicon Carbide: Material, Proceeding and Devices / ed. by Z.C. Feng and J.H. Zhao. – Taylor and Francis books Inc, 2004. – P. 121–163.
74.ǰȜȒȎȘȜȐ Ȍ.Ǯ., ǸȎșȎȏȡȣȜȐȎ dz.ǻ., ǹȡȘȖț ǿ.ǻ., ǹȓȝțȓȐȎ Ǯ.Ǯ., ǺȜȣȜȐ dz.ǻ., ȆȎțȖțȎ ǯ.Dz. ȋǽǾ Ȑ 2-ȚȚ ȒȖȎȝȎȕȜțȓ Ȗ ȜȝȠȖȥȓȟȘȜȓ ȝȜȑșȜȧȓțȖȓ ȟȜȏȟȠȐȓțțȜȑȜ ȒȓȢȓȘȠȎ Ȑ ȫȝȖȠȎȘȟȖȎșȪțȩȣ ȟșȜ-
ȭȣ 4H-SiC // ȂȀȀ. – 1991. – 33, Ɋ11. – C. 3315–3326.
75.Violin E.V., Kal’nin A.A., Pasynkov V.V., Tairov Yu.M., Yas’kov D.A. Luminescence of silicon carbide with different impurities // Mat. Res. Bull. – 1969. – 4. – P. S231–S241.
76.Zheng Y., Ramungul N., Patel R., Khemka V., Chow T.P. Be- ryllium-Implanted 6H-SiC P+N Junctions // Mat. Sci. Forum. – 1998. – 264–268. – P. 1049–1052.
77.Chen X.D., Feng S., Beling C.D., Gong M., Henkel T., Tanoue H., Kobayashi N. A deep level transient spectroscopy study of berryllium implanted n-type 6H-SIC // J.Appl.Phys. – 2000. – 88, N8. – P. 4558–4562.
78.Chen X.D., Ling C.C., Fung S., Beling C.D., Gong M., Henkel T., Tanoue H., Kobayashi N. Beryllium implantation induced deep level defects in p-type 6H-silicon carbide // J. Appl.Phys. – 2003. – 93, N5. – P. 3117–3119.
79.ǯȎȞȎțȜȐ ǽ.DZ. ǾȎȒȖȜȟȝȓȘȠȞȜȟȘȜȝȖȭ ȦȖȞȜȘȜȕȜțțȩȣ ȝȜșȡȝȞȜ-
ȐȜȒțȖȘȜȐ: SiC Ȗ GaN // ȂȀȀ. – 1999. – 41, N5. – C. 789–793.
80.Scott M.B., ScoÀeld J.D., Yeo Y.K., Hengehold R.L. Deep Level defect Study of Ion Implanted (Ar, Mg, Cr) n-Type 6H-SiC by Deep Level Transient Spectroscopy // Mat. Sci. Forum. – 1998. – 264–268. – P. 549–552.
81.ǯȎșȎțȒȜȐȖȥ ǰ.ǿ. ǮȘȤȓȝȠȜȞ ȟȘȎțȒȖȗ Ȑ6H-SiC // ȂȀǽ. – 1991. –
25, Ɋ2. – C. 287–294.
82.ǰȎȣțȓȞ ȅ., ȀȎȖȞȜȐ Ȍ.Ǻ. ǹȬȚȖțȓȟȤȓțȤȖȭ ȘȎȞȏȖȒȎ ȘȞȓȚțȖȭ, șȓ-
ȑȖȞȜȐȎțțȜȑȜ ȟȘȎțȒȖȓȚ // ȂȀȀ. – 1969. – 11, Ɋ9. – ǿ. 2440–2443.
ȅȎȟȠȪ I, DZșȎȐȎ 8 |
207 |
|
|
83.ǹȖȠȐȖț Dz.ǽ., ǺȎșȪȤȓȐ Ǯ.Ǯ., ǻȎȡȚȜȐ Ǯ.ǰ., ǾȜȓțȘȜȐ Ǯ.Dz., ǿȎțȘȖț ǰ.Ƕ. p+-n-n+ ȟȠȞȡȘȠȡȞȩ ȟ ȒȐȜȗțȜȗ ȖțȔȓȘȤȖȓȗ țȎ ȘȎȞȏȖȒȓ ȘȞȓȚțȖȭ // ǽȖȟȪȚȎ Ȑ ǴȀȂ. – 1987. – 13. – C. 1247.
84.Greulich-Weber S., Marz M., Spaeth J.M., Mokhov E.N., Kolabukhova E.N. Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide // Mat.Sci. Forum. – 2000. – 338–342. – P. 809–812.
85.Kemenade A.W.C., Hagen S.H. Proof of the involvement of Ti in the Low-temperature ABC Luminescence spectrum of 6H SiC // Solid State Common. – 1974. – 14, N2. – P. 1331–1333.
86.Lee K.M., Dang Le.Si., Watkins G.B., Choyke W.J. Optically detected magnetic resonance study of SiC:Ti // Phys. Rev. B. – 1985 – 32, N4. – P. 2273–2284.
87.Maier K., Muller H.D., Schneider J. Transition Metals in Silicon Carbide (SiC): Vanadium and Titanium // Mat. Sci. Forum. – 1992. – 83–87. – P. 1183–1194.
88.Maier K., Schneider J., Wilkening W., Leibenzeder S., Steine R. Electron spin resonance studies of transition metal deep level impurities in SiC // Mat. Sci. Eng. B. – 1992. – 11, N1–4. – P. 27–30.
89.Dalibor T., Pensl G., Matsunami H., Kimoto H., Choyke W.J., Schoner A., Nordel N. Deep defect Centers in Silicon Carbide Monitored with deep Level Transient Spectroscopy // Phys. Status Solidi A. – 1997. – 162, N1. – P. 199–232.
90.Dalibor T., Pensl G., Nordel N., Schoner A., Choyke W.J. Ground States of the Ionized Iso-electronic Ti Acceptor in SiC // Mat. Sci. Forum. – 1998. – 264–268. – P. 537–540.
91.Achtziger N., Witthuhn W. Band gap states of Ti, V and Cr in
4H-SiC silicon carbide // Appl.Phys.Lett. – 1997. – 71, N1. –
P. 110–112.
92.Achtziger N., Witthuhn W. Band-gap states of Ti, V and Cr in 4H-SiC: IdentiÀcation and characterization by elemental transmission of radioactive isotopes // Phys.Rev. – 1998. – 57, N19. – P. 12181–12196.

208 ǮȑȓȓȐ Ǽ.Ǯ., ǯȓșȭȓȐ Ǯ.dz., ǯȜșȠȜȐȓȤ ǻ.ǿ., ǸȖȟȓșȓȐ ǰ.ǿ., ǸȜțȎȘȜȐȎ Ǿ.ǰ. Ȗ ȒȞ.
93.Langer J.M., Heinrich H. Deep-level impurities: A possible guide to prediction of band-edge discontinuities in semiconductor heterojunctions // Phys. Rev. Lett. – 1985. – 55, N13. – P. 1414–1417.
94.Mitchel W.C., Roth M.D., Evwaraye A.O., Yu P.W., Jenny J., Skowronski M., Smith S.R., Hodgood H.McD., Glass R.C., Augustine G., Hopkins R.H. Electronic properties of semiinsulating vanadium-doped 6H-SiC // Inst. Phys. Conf. Ser. – 1996. – 142. – P. 313–316.
95.Hobgood H.McD., Glass R.C., Augustine A., Hopkins R.H., Jenny J., Skowronski M., Mitchel W.C., Roth M. Semi-insulating 6H-SiC grown by physical vapor transport // Appl. Phys. Lett. – 1995. – 66, N11. – P. 1364–1366.
96.Dombrovskii K.F., Kaufman U., Kunzer M., Maier K., Schneider J., Shields V.B., Spencer M.G. Deep donor state of vanadium in cubic silicon carbide (3C-SiC) // Appl. Phys. Lett. – 1994. – 65, N14. – P. 1811–1813.
97.Schneider J., Muller H.D., Maier K., Wilkening W., Fuchs F., Doroen A., Leibenzader S., Steine S. Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide // Appl. Phys. Lett. – 1990. – 56, N12. – P. 1184–1186.
98.Achtziger N., Grillenberg J., Witthuhn W. Radiotracer IdentiÀcation of Ti, V and Cr band gap States in 4H and 6H-SiC // Mat. Sci. Forum. – 1998. – 264–268. – P. 541–544.
99.Zvanut M.E., Konovalov V.V., Wang H., Mitchel W.C., Mit-
chel W.D., Landis G. Defect levels and types of point defects in high-purity and vanadium-doped semi-insulated 4H-SiC // J.Appl.Phys. – 2004. – 96, N10. – P. 5484–5489.
100.Mitchel W.C., Mitchel W.D., Landis G., Smith H.E., Wonwoo Lee, Zvanut M.E. Vanadium donor and acceptor levels in semi-insulating 4Hand 6H-SiC // J.Appl.Phys. – 2007. – 101, N1. – P. 013707.
101.Son N.T., Carlesson P., Gallstrom A., Magnusson B., Janzen E. Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC // Appl.Phys.Lett. – 2007. – 91, N20. – P. 202111.
ȅȎȟȠȪ I, DZșȎȐȎ 8 |
209 |
|
|
102.Konstantinov A.O., Ivanov P.A. Sublimation growth of silicon carbide in the growth system free of carbon materials // Inst. Phys.Conf. Ser. – 1994. – 137. – P. 37–40.
103.Grillenberg J., Atchitziger N., Sielemann R., Witthunh W. Radiatracer identiÀcation of a Ta-related deep level in 4H-SiC // J.Appl.Phys. – 2000. – 88, N6. – P. 3260–3265.
104.Achtziger N., Witthunh W. Deep levels of chromium in 4H-SiC // Mat. Sci. Eng. B. – 1997. – 46, N1–3. – P. 333–335.
105.Achtziger N., Grillenberg J., Witthunh W. Band gap states of V and Cr in 6H – silicon carbide // Appl.Phys A. – 1997. – 65, N3. – P. 329–331.
106.Kuznser M., Dombrovski K.F., Fuchs F., Kaufmann U., Schneider J., Baranov P.G., Mokhov E.N. IdentiÀcation of optically and electrically active molybdenum trace impurities in 6H-SiC substrate // Inst. Phys. Conf. Ser. – 1996. – 142. – P. 385–388.
107.Feege M., Grenlich-Weber S., Spaeth J.-M. Observation of an interstitial manganese impurity in 6H-SiC // Semicond. Sci. Technol. – 1993. – N8. – P. 1620–1625.
108.Baur J., Kunzer M., Schneider J. Transition Metals in SiC Polytypes, as Studied by Magnetic Resonance Technique // Phys. Stat.Sol.A. – 1997. – 162, N1. – P. 153–172.
109.Machado W.V.M., Justo J.F., Assali L.V.C. 3d-Transition Matals in Cubic and Hexagonal Silicon Carbide // Mat. Sci. Forum. – 2005. – 483–485. – P. 531.
110.Song Bo, Bao Bo, Li H., Jjan J., Han S., Zhang X., Meng S., Wang W., Chen W. Magnetic properties of Mn-doped 6H-SiC // Appl.Phys.Lett. – 2009. – 94, N10. – P. 102508.
111.Grillenberg J., Atchitziger N., Gunter F., Witthunh W. Radiotracer investigation of deep Ga and Zn related band gap states in 6H-SiC // Appl.Phys.Lett. – 1998. – 73, N25. – P. 3698–3699.
112.Grillenberg J., Atchitziger N., Witthunh W. On the Existance of deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC // Mat.Sci. Forum. – 2000. – 338–342. – P. 749–752.