МММ / 01_Layer_Deposition_Thermal_Oxidation_and_CVD

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Advantages of PECVD

1.Lower processing temperatures

•Low film stress

2.High deposition rates

3.Good film adhesion to the wafer

4.Excellent gap-fill and conformal coverage

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OUTLINE

Thermal Oxidation and Model

Factors Affecting Kinetics

Future Trends: Oxidation

CVD and Model

Factors Affecting Kinetics

Future Trends: CVD

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Future Trends: CVD

Ever increasing aspect ratio

•Metal thickness not shrinking as fast as lateral dimension

•Difficult coverage and filling

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Challenges

Contamination

•Like carbon from precursors

Difficulty with alloys

•Unwanted reactions

•Controlling the exact composition of alloy

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Summary

Oxidation

•Volume Expansion

•Linear Parabolic Model

Factors Affecting Kinetics

•T, P: + Effect

•Crystal orientation: (111) > (110) > (100)

Future Trends and Challenges

•Advanced gate dielectric materials

•2D and 3D effects

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Summary

 CVD

• T Reaction controlled

•T Transfer controlled

Factors Affecting Kinetics

•BL, Depletion, P: - Effect

PECVD: Low T

Future Trends and Challenges

•Aspect Ratio

•Contamination

•Alloys

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THANK YOU