МММ / 01_Layer_Deposition_Thermal_Oxidation_and_CVD

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OUTLINE

Thermal Oxidation and Model

Factors Affecting Kinetics

Future Trends: Oxidation

o CVD and Model

o Factors Affecting Kinetics

o Future Trends: CVD

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Future Trends: Oxidation

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Challenges

2D and 3D effects have become increasingly important in small structures.

Accurate prediction of shapes of oxides grown on non planar structures and stresses generated.

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Challenges

Increasing use of low temperature processes to control impurity diffusion.

Oxides grow slowly at low temperatures. To obtain relatively thick layers:

•High pressure oxidation

•Deposited SiO2 films. Ideal properties of Si/SiO2 interface preserved by first growing a thin thermal oxide and then depositing SiO2 on top.

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OUTLINE

Thermal Oxidation and Model

Factors Affecting Kinetics

Future Trends: Oxidation

CVD and Model

o Factors Affecting Kinetics

o Future Trends: CVD

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Chemical Vapor Deposition

Reactant gases are introduced into the deposition chamber

Chemical reaction between the these gases on the substrate surface produces the film

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Chemical Vapor Deposition

Dielectrics

Semiconductors

Metals

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Issues

High electrical resistance

Greater chances of mechanical cracking and failure

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Space Filling

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Process

Gas Stream

3 4 5

Wafer

Susceptor