Книги2 / 1993 P._Lloyd,__C._C._McAndrew,__M._J._McLennan,__S._N

Wolfgang Joppich

Slobodan Mijalkovic

Multigrid Methods for Process Simulation

(Computational Microelectronics)

1993. 126 figures. Approx. 340 pages.

Cloth oS 1386,-, DM 198,-

ISBN 3-211-82404-9

Prices are subject to change without notice

This book is the first one that combines both research in multigrid methods and a particular application field here - process simulation. It is the declared intention of this book to convince by practically demonstrating the power of the multigrid principle and to establish an example of fruitful interdisciplinary interaction. The introduction to multigrid is therefore strictly directed towards the goal to provide the algorithmical overview one needs to compose optimal multigrid algorithms for evolution problems of process simulation and similar applications. The necessary explanation how and why multigrid works is derived from the roots. So the book preassumes no advanced familiarity with numerical analysis. Additionally a complete strategy to implement different algorithmical components on an adaptive multilevel grid structure is presented. The outlined principle of grid definement and adaption is based on the control of errors and is reliable as well as general. Last but not least the described strategies are applied to "real life" problems of process simulation.

Consequenly this book is an important contribution to the interdisciplinary challenge of improving numerical techniques for diffusion problems of process simulation.

Springer-Verlag Wien New York

Sachsenplatz 4-6, P.O. Box 89, A-1201 Wien . Heidelberger Platz 3, 0-14197 Berlin

175 Fifth Avenue. New York, NY 10010, USA· 37-3, Hongo 3-chome, Bunkyo-ku, Tokyo, 113, Japan

Narain D. Arora

MOSFET Models for VLSI Circuit Simulation

Theory and Practice

(Computational Microelectronics)

1993. Approx. 260 figures. Approx. 600 pages.

Cloth oS 2086,-, DM 298,-, US $ 198.00

ISBN 3-211-82395-6

Prices are subject to change without notice

The book covers the MOS transistor models and their parameters required for VLSI simulation of MOS integrated circuits. It gives the first detailed presentation of model parameter determination for MOS models. Various models are developed ranging from simple to more sophisticated models that take into account new physical effects observed in submicron devices used in today's MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the model in describing the device characteristics are clearly understood. Understanding these models is essential when designing circuits for the state of the art MOS IC's. Threshold voltage being the single most important MOSFET parameter, a full chapter is devoted to the development of the device threshold voltage model. Due to the importance of designing reliable circuits, the device reliability models as applied for circuit simulations are also covered. Since the device parameters vary due to inherent processing variations, how to arrive at worst case design parameters are covered.

Presentation of the material is such that even an undergraduate student not well familiar with semiconductor device physics can understand the intricacies of MOSFET modeling. The book serves as a technical source in the area of MOSFET modeling for state of the art MOSFET technology for both practicing device and circuit engineers and engineering students interested in the said area.

Springer-Verlag Wien New York

Sachsenplatz4-6, P.o. Box 89, A-1201 Wien· Heidelberger Platz 3, D-14197 Berlin

175 Fifth Avenue, New York, NY 10010, USA· 37-3, Hongo 3-chome, Bunkyo-ku, Tokyo, 113, Japan