Книги2 / 1993 P._Lloyd,__C._C._McAndrew,__M._J._McLennan,__S._N

Figure 20: Comparison between STORM simulations and experimental date for a short-channel PMOS device

carried out at CMMT was on behalf of, and financially supported by, GEC Plessey Semiconductors. The authors would like to acknowledge the important contributions of several colleagues from the each of the authors' sites, especially G. Baccarani, F. Baruffaldi, R. Booth, G.C. dal Brun, B. Carniti, R. Cartuyvels, P.D. Cole, C. Corbex, G. Crean, L. Dupas, W. Eichhammer, A. Gerodolle, R. Guerrieri, W. Henke,

P.Ciampolini, S.K. Jones, A. De Keersgieter, S. List, K. Maex, S. Martin, D. Mathiot, T. Pedron, P. Pearson, M. Rohan, M. Schafer, W. Schoenmaker, R.J. Wierzbicki, and

H. Wille.

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