Книги2 / 1993 Dutton , Yu -Technology CAD_Computer Simulation

Advection-diffusion equation, 324 Artificial diffusivity, 325

Band diagram, 198 Bandgap, 61, 132

Bandgap narrowing, 177, 178, 312 Base, 246

handle, 303 link, 303

transport current, 256 Base push-out, 9, 43, 65 Base-widening effect, 281

Base-width modulation, 271,276 Bernoulli function, 327, 328 BiCMOS, 4, 244, 295, 302

buried-epi, 302 triple-diffused, 296 Stanford's process, 357

Bipolar transistor, 1 BJT, 41, 244, 248

double-diffused technology, 41 second-order effect, 274 triple-diffused, 337

Body effect, 297,306

Body modulation coefficient, 'Y, 87,295,299

Boltzmann statistics, 138 Boltzmann transport analysis (BTA),

47,50 Breakdown voltage, 299 Built-in field, 253

Buried contact, 305 Buried-channel device, 27

CAD, 1 Capacitance, 266

depletion, 266 diffusion, 266 space-charge, 155

Channel, 210, 221 charge, 221 Channel-stop, 12

Charge neutrality, 134 Charge-storage model, 260 Charge-control model, 267, 269 Clustering, 73, 74

arsenic, 74 CMOS, 2, 21, 22

n-well poly-gate, 23 p-well metal-gate, 22 latch-up, 5, 25 Stanford process, 26 twin-tub, 22, 25, 26

Collector, 246 Conductance matrix, 333

Continuity equation, 6, 116, 146, 147, 318

electrons, 90, 147 holes, 90, 146

Counter-doping, 225, 297 Current, 144

diffusion, 145

INDEX

displacement, 155, 265 drift, 144

Current gain, 248

Cutoff frequency, 274, 309, 333, 364

calculation, 364

Debye length, 96, 108, 109 extrinsic, 96

Degeneracy factor, 135 Diffusion, 65

coefficient, 65 Diffusion length, 243 Diffusivity, 66

effective diffusivity, 67 impurity, 66

Diode, 248

long-base, 248 short-base, 248

Discretization, 12, 319, 321 accuracy, 321

Scharfetter-Gummel (SG) scheme, 326

Double-diffused, 250, 259, 285 Double-diffused bipolar process,

8

Drain-Induced Barrier Lowering (DIBL),28

Drift-Diffusion (DD) model, 318

Early effect, 275

Early voltage, 277, 299, 334 Ebers-Moll (EM) model, 6, 269 Effective density of states, 135 Einstein relationship, 146, 149,

318 Electron affinity, 205

Electrostatic potential, 201

371

Emitter, 246 dip, 65 efficiency, 8

oxide-walled, 303 polysilicon, 312

Epitaxial growth, 43 Erfc distribution, 11, 94 Excess carriers, 253

Fermi energy, 138 intrinsic, 61, 138, 139 quasi, 142

Fermi-Dirac distribution, 135 Fick's second law, 318 Flatband, 205, 206, 218

voltage, 208

Gate field mobility reduction, 235 Gaussian distribution, 11,47

two-sided, 47 Gummel integral, 255

Gummel-Poon (GP) model, 4

High-level injection, 181,275,279, 308

IC,l Implant, 344

channel threshold adjust, 344 field, 343

Impurity diffusion, 65, 68 concentration dependent, 68

Intrinsic carrier concentration, 133, 61

Inversion layer, 197 onset, 203 surface, 203

Ion implant, 13, 43, 49 multi-layer, 49

372

Jacobian matrix, 222,330 Junction, 264

abrupt, 264 linearly graded, 263

Kink,9

phosphorus diffusion, 9 Kirchoff's current law, 265 Knee current, 281

Law of mass action, 110, 133 LDD, 191,305

Lifetime, 141, 288

doping dependence, 141, 177 LOCOS, 303, 343

Low frequency ac analysis, 357 LPCVD, 27, 344

LTO, 345, 350

MBE, 314

Mobility reduction, 239 MOCVD, 314

Monte Carlo method (MC), 52 MOS, 2, 234

buried channel, 234 buried layer, 220 capacitor, 198 depletion, 198, 220, 222 enhancement, 198, 220 flat band voltage, 102

MOSFET, 197, 198,208

Moving-boundary, 319

n-channel, 198, 201 Newton-Raphson method, 221

OED, 207 Oxidation, 13, 53

chlorine ambient, 62

INDEX

doping dependence, 60 linear-parabolic growth law,

53

pressure dependence, 58 thin oxide growth, 63

Oxidation enhanced diffusion (0ED ), 43, 55, 76

Oxidation-induced stacking fault (OISF),55

Oxide capacitance, 200

p-channel, 198 Passivation, 306

Pearson IV distribution (PIV), 47,48

Phosphorus-glass deposition, 28 PISCES, 4, 90, 91, 95, 97, 117, 119, 161, 177, 217, 228, 237,240,299,310,355,

362

pn junction, 160 short-base, 160

Point defects, 54

Poisson's equation, 6, 90, 107, 319

PSG, 344

Quasi-equilibrium, 150

Quasi-neutrality, 252

Quasi-steady analysis, 272

Recombination, 178 Auger, 178,288, 312 SRH, 143, 178

Relative excess density of carriers, 253

Retrograde well, 342

Rigidboundary approximation, 274

INDEX

Rutherford backscattering, 75

Schottky contact, 356 Schottky diode, 305, 309

SEDAN, 4, 90, 91, 95, 97, 109, 117,161,166,167,171, 177,178,179,217,222, 228,282,288,299,309, 312,

input format, 91 Segregation, 14, 61, 75, 76

coefficient, 76 phosphorus, 306

Sidewall spacer, 305 Silicide, 305

Silicon interstitial, 54, 66 Silicon vacancy, 54, 60, 66 SIMS, 94

Si02 -Si fixed charge, 207 Solid solubility, 75 SPICE, 2, 87,292 Strong inversion, 87 Subthreshold, 198

characteristics, 28 conduction, 235

SUPREM, 3, 19, 37, 95, 119, 217,282,312,356,357

Surface conductance, 210 Surface potential, 200

TCAD, 20, 32

Threshold voltage, 10, 87, 198, 204, 224

adjustment, 10, 19, 297 body bias sensitivity, 228 extrapolated, 224

Time constant, 267 Transit time, 279, 282, 284

base, 279, 285

373

Triple-diffused, 296

Two-region model, 231

Upwind method, 324

Vacuum level, 218

Webster effect, 275 Work function, 98, 205

semiconductor, 205