Книги2 / 1988 Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin (auth.) Computer-Aided Design and VLSI Device Development 1988
.pdfSubject Index |
375 |
current drive, 174, 273 Transport coefficient, 31-32, 39 Trench,233
CMOS, 233-235
surface inversion, 235-248
Velocity Saturation, 4
Via hole capacitance, 355
Via hole resistance, 356
Viscosity, 59
Voltage standard, 4
About the Authors
Kit M. Cham was born in Hong Kong. He received the Ph.D. degree in applied physics from Yale University, New Haven, cr, in 1980. Since then, he has been with the Integrated Circuit Laboratory of Hewlett-Packard, Palo Alto, CA. He has worked on the characterization of MNOS devices for nonvolatile memories from 1980 to 1981. Since then he has been involved in the development of submicron CMOS technology. He is currently project leader for submicron CMOS device design. His work has resulted in 30 papers and two patents pending. He is coauthor of a book titled Computer-Aided Design and VLSI Device Development published by Kluwer Academic Publishers in 1986.
Soo-Young Oh received his Ph.D. in Electrical Engineering from Stanford University in 1980. He then joined Hewlett-Packard, and is now project manager of device, process, and system package modeling group in Structure Research Laboratory. He is currently working on a complete numerical simulation CAD system from process/device to circuit/system package. His work has resulted in 17 publications. He is a coauthor of a book titled
Computer-Aided Design and VLSI Device Development published by Kluwer Academic Publishers in 1986.
378 Computer-Aided Design
John L. Moll received his Ph.D. in Electrical Engineering from Ohio State University in 1952. He is currently senior scientist and manager of the Integrated Circuit Structure Research Laboratory of Hewlett-Packard. His extensive work in solid state devices has resulted in over 100 papers and ten patents. He is author of a book, Physics of Semiconductors, and coauthor of a book titled Computer-Aided Design and VLSI Device Development. He is a fel-
low of |
IEEE, member of the American Physical Society, National |
Academy |
of Engineering, National Academy of Sciences, and Sigma Xi. |
Keunmyung Lee was born in Korea in 1957. He received his M.S. and Ph.D. degrees from University of California, Berkeley, in 1982 and 1985, respectively, both in electrical engineering and computer sciences. Since 1985 he has been with Hewlett-Packard Laboratories, Palo Alto, CA. His current research interests are design and modeling of interconnect systems of integrated circuits and packages. He has published 8 papers, and has one patent pending.
Paul Vande Voorde recieved his Ph.D. degree in solid state physics from the University of Colorado in 1980. His dissertation topic involved fluctuation phenomenon in III-V semiconductors. He has worked at Hewlett-Packard Labon.tories since 1981. While at HP Laboratories, Paul has been involved in several silicon processing projects related to advanced CMOS. Currently he is working on process and device simulation to support CMOS and Bipolar process development. He has authored or coauthered 13 publications in journals and conference proceedings.
Daeje Chin was born in Korea in 1952. He received the Ph.D. in electrical engineering from Stanford University in 1983. He developed the twodimensional process simulation programs SUPRA and SOAP, for his dissertation at Stanford while working part-time at Hewlett-Packard I.C. Laboratory. After obtaining his doctorate, he joined IBM Watson Research Center in New
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York. He has been working on submicron memory processing technology and high performance DRAM circuit design. In 1986, he joined Samsung Semiconductor, and is currently working on the development of 4MB DRAM. He has 15 publications and four patents pending. He is also coauthor of a book titled
Computer-Aided Design and VLSf Device Development published by Kluwer Academic Publishers in 1986.