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Новосибирский государственный технический университет

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APT20M20BLLL

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APT20M20B2LL

APT20M20LLL

200V 100A

0.020Ω

POWER MOS 7 R MOSFET

Power MOS 7

is a new generation of low loss, high voltage, N-Channel

T-MAX™

TO-264

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7® by significantly lowering RDS(ON)

and Q . Power MOS 7® combines lower conduction and switching losses

along

with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• Popular T-MAX™ or TO-264 Package

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

APT20M20B2LL_LLL

UNIT

VDSS

Drain-Source Voltage

200

Volts

Continuous Drain Current @ TC = 25°C 5

100

Amps

IDM

Pulsed Drain Current 1

400

VGS

Gate-Source Voltage Continuous

±30

Volts

VGSM

Gate-Source Voltage Transient

±40

Total Power Dissipation @ TC = 25°C

568

Watts

Linear Derating Factor

4.55

W/°C

TJ,TSTG

Operating and Storage Junction Temperature Range

-55 to 150

°C

Lead Temperature: 0.063" from Case for 10 Sec.

300

IAR

Avalanche Current 1

(Repetitive and Non-Repetitive)

100

Amps

EAR

Repetitive Avalanche Energy 1

EAS

Single Pulse Avalanche Energy 4

2500

STATICELECTRICALCHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BVDSS

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

200

Volts

RDS(on)

Drain-Source On-State Resistance 2 (VGS = 10V, ID = 50A)

0.020

Ohms

Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)

100

µA

DSS

Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)

500

IGSS

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

±100

VGS(th)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7013 Rev D 4-2004

DYNAMICCHARACTERISTICS

APT20M20B2LL_LLL

Symbol

Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

Ciss

Input Capacitance

VGS = 0V

6850

Coss

Output Capacitance

2180

VDS = 25V

Crss

Reverse Transfer Capacitance

f = 1 MHz

Total Gate Charge 3

VGS = 10V

110

Qgs

Gate-Source Charge

VDD = 100V

Qgd

Gate-Drain ("Miller") Charge

ID = 100A @ 25°C

td(on)

Turn-on Delay Time

RESISTIVESWITCHING

VGS = 15V

Rise Time

= 100V

td(off)

Turn-off Delay Time

ID = 100A @ 25°C

RG = 0.6Ω

Fall Time

Eon

Turn-on Switching Energy

INDUCTIVESWITCHING@25°C

465

VDD = 130V, VGS = 15V

Eoff

455

Turn-off Switching Energy

ID = 100A, RG = 5Ω

µJ

Eon

Turn-on Switching Energy

INDUCTIVESWITCHING@125°C

920

VDD = 130V, VGS = 15V

Eoff

Turn-off Switching Energy

ID = 100A, RG = 5Ω

915

SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Continuous Source Current (Body Diode)

100

Amps

ISM

Pulsed Source Current

(Body Diode)

400

Diode Forward Voltage

2 (V

= 0V, I = -I

100A)

1.3

Volts

t rr

Reverse Recovery Time (IS = -ID100A, dlS/dt = 100A/µs)

284

Q rr

Reverse Recovery Charge (IS = -ID100A, dlS/dt = 100A/µs)

3.06

µC

dv/dt

Peak Diode Recovery dv/dt

V/ns

THERMALCHARACTERISTICS

Symbol

Characteristic

MIN

TYP

MAX

UNIT

RθJC

Junction to Case

0.22

°C/W

RθJA

Junction to Ambient

Repetitive Rating: Pulse width limited by maximum junction

4 Starting Tj = +25°C, L = 0.50mH, RG = 25Ω, Peak IL = 100A

temperature

The maximum current is limited by lead temperature

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

dv/ numbers reflect the limitations of the test circuit rather than the

3 See MIL-STD-750 Method 3471

≤ -I 75A

di/

≤ 700A/µs V ≤ V

≤ 150°C

device itself. I

DSS

Eon includes diode reverse recovery.

See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and inforation contained herein.

(°C/W)

0.25

0.9

0.20

IMPEDANCE

0.7

0.15

0.5

2004-4

THERMAL,

Note:

0.10

θJC

0.05

0.3

Duty Factor D = t1/t

0.1

Rev

Peak TJ = PDM x ZθJC + TC

0.05

SINGLE PULSE

7013-

10-5

10-4

10-3

10-2

10-1

050

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

Typical Performance Curves

RC MODEL

Junction temp. ( ”C)

0.0844 0.0124F

Power (Watts)

0.138

0.218F

Case temperature

FIGURE2,TRANSIENT THERMAL IMPEDANCE MODEL

	200
	180	VDS> ID (ON) x			RDS(ON) MAX.
	180	250 µSEC. PULSE TEST
(AMPERES)		@ <0.5 % DUTY CYCLE
	160
	140
	120
CURRENT	100				TJ = +125°C
	80				TJ = +125°C
	80				TJ = +25°C
					TJ = -55°C
DRAIN	60				TJ = -55°C
DRAIN	40
,
D
I	20
	20
	0 0	1	2	3	4	5	6	7	8	9	10
	VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

FIGURE4, TRANSFERCHARACTERISTICS

120

(AMPERES)		100
(AMPERES)		80
CURRENT		80
CURRENT		60
		60
,DRAIN		40
,DRAIN		20
D		20
D
I
		025	50	75	100	125	150
			TC, CASE TEMPERATURE (°C)
	FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
RESISTANCE		2.5
RESISTANCE			ID = 50A
			ID = 50A
			VGS = 10V
SOURCE-TO-DRAINON	(NORMALIZED)	2.0
SOURCE-TO-DRAINON	(NORMALIZED)	1.5
		1.5
		1.0
		0.5
,
DS(ON)		0.0
R		-50	-25 0	25 50	75	100 125	150

TJ, JUNCTION TEMPERATURE (°C)

FIGURE 8,RDS(ON) vs. TEMPERATURE

	250							APT20M20B2LL_LLL
	250
				VGS =15 &10V
(AMPERES)						9V
	200
	150						7.5V
CURRENT	150						7.5V
								7V
	100

DRAIN								6.5
DRAIN	50								6V
,
D
I									5.5V
									5.5V
	0	0		5	10	15	20		25	30
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
RESISTANCE	1.40		NORMALIZED TO
			NORMALIZED TO
			VGS = 10V		@ ID = 50A
	1.30

ON	1.20
ON
DRAIN-TO-SOURCE	1.10
			VGS=10V
	1.00
	0.90						VGS=20V
	0.90
,
DS(ON)	0.80	0	20	40	60	80	100	120	140	160
R		0	20	40	60	80	100	120	140	160
			ID, DRAIN CURRENT (AMPERES)

		FIGURE5,RDS(ON)vsDRAINCURRENT
SOURCE-TO-DRAINBREAKDOWN	(NORMALIZED)VOLTAGE	1.15
SOURCE-TO-DRAINBREAKDOWN	(NORMALIZED)VOLTAGE	0.95
		1.10
		1.05
		1.00
,
DSS
BV		0.90
		0.90
		-50 -25 0 25 50 75 100 125 150
		TJ, JUNCTION TEMPERATURE (°C)
		FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
		1.2
THRESHOLDVOLTAGE		1.1
	(NORMALIZED)	1.0
	(NORMALIZED)	0.9
		0.9
		0.8
,
GS(TH)		0.7
V

0.6 -50 -25 0 25 50 75 100 125 150

TC, CASE TEMPERATURE (°C)

FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE

050-7013 Rev D 4-2004

	508
			OPERATIONHERE
(AMPERES)		LIMITEDBYRDS(ON)
	100					100µS

CURRENT						1mS
CURRENT	10
,DRAIN						10mS
,DRAIN		T		=+25°C
D		C
I		TJ =+150°C
		TJ =+150°C
		SINGLE PULSE
	1	1		10	100	200
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE10,MAXIMUMSAFEOPERATINGAREA

(VOLTS)	16
		ID = 75A
					VDS=40V
VOLTAGE	12				VDS=40V
	12
				VDS=100V			VDS=160V
							VDS=160V
GATE-TO-SOURCE	8
	4

,
GS
V	0 0	20	40	60	80	100	120	140	160 180
	0 0	20	40	60	80	100	120	140	160 180
			Qg, TOTAL GATE CHARGE (nC)

FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE

	90
	80
	70				td(off)
	70
(ns)	60	VDD = 130V
(ns)		RG = 5Ω
d(off)	50	RG = 5Ω
d(off)	50	T = 125°C
t		J
and	40	L = 100µH
	40

d(on)	30				td(on)
d(on)
t
	20
	20
	10
	020	40	60	80	100	120	140
				ID (A)
	FIGURE 14, DELAY TIMES vs CURRENT

	1400
		VDD = 130V
	1200	RG = 5Ω
( J)		TJ = 125°C
	1000	L = 100µH
	1000	EON includes
ENERGY		EON includes
		diode reverse	recovery.
	800

SWITCHING	600
		Eon
	400

	200	Eoff
		Eoff
	0
	20	40	60	80	100	120	140
				ID (A)

FIGURE 16, SWITCHING ENERGY vs CURRENT

	20,000								APT20M20B2LL_LLL
	20,000
	10,000									Ciss
(pF)										Coss
CAPACITANCE		1,000
CAPACITANCE		100								Crss
C,		100								Crss
		10 0		10		20		30	40	50
			VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
(AMPERES)		200
		100
				TJ =+150°C
CURRENT				TJ =+150°C
							TJ =+25°C

, REVERSE DRAIN		10
, REVERSE DRAIN
DR		10.3		0.5		0.7	0.9	1.1	1.3	1.5
I		10.3		0.5		0.7	0.9	1.1	1.3	1.5
			VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
		FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
		160	VDD	= 130V
			VDD	= 130V
		140	RG = 5Ω
			TJ = 125°C
		120	L = 100µH
		120
(ns)		100
(ns)					t	f
f					t
t		80
and		80
and								tr
r		60						tr
t

		40
		20
		020		40		60	80	100	120	140
							ID (A)
		FIGURE 15, RISE AND FALL TIMES vs CURRENT

	2500
( J)	2000
( J)						Eoff
ENERGY						Eoff
	1500
										Eon
SWITCHING	1000							VDD = 130V
								VDD = 130V
								ID = 100A
	500							TJ = 125°C
								L = 100µH
								EON	includes
								diode reverse			recovery.
	0	0	5	10	15	20	25	30	35	40	45	50
				RG, GATE RESISTANCE (Ohms)
	FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

Typical Performance Curves

APT20M20B2LL_LLL

90%

10%

GateVoltage

TJ125°C

td(off)

td(on)

90%

Drain Current

90%

Drain Voltage

10%

Drain Voltage

10% 0

Switching Energy

Drain Current

Switching Energy

Figure18,Turn-onSwitchingWaveformsandDefinitions

Figure 19, Turn-off Switching Waveforms and Definitions

APT100S20B

VDD

VCE

D.U.T.

Figure 20, Inductive Switching Test Circuit

T-MAXTM (B2) Package Outline

TO-264 (L) Package Outline

4.69 (.185)			4.60	(.181)
5.31 (.209)		15.49 (.610)	5.21	(.205)	19.51 (.768)
1.49 (.059)		16.26 (.640)	1.80	(.071)	20.50 (.807)
2.49 (.098)			2.01	(.079)		3.10 (.122)
						3.10 (.122)
		5.38 (.212)				3.48 (.137)
		6.20 (.244)
					5.79 (.228)
Drain	20.80 (.819)				6.20 (.244)
	21.46 (.845)	Drain
		Drain		26.49 (1.043)
				25.48 (1.003)
	4.50 (.177) Max.	2.87 (.113)
	4.50 (.177) Max.	3.12 (.123)				2.29 (.090)
		3.12 (.123)				2.29 (.090)
		1.65 (.065)			2.29 (.090)	2.69 (.106)
0.40 (.016)		1.65 (.065)			2.69 (.106)
0.79 (.031)	19.81 (.780)	2.13 (.084)		19.81 (.780)		Gate
	20.32 (.800)	Gate		19.81 (.780)
	20.32 (.800)	Gate		21.39 (.842)
	1.01 (.040)	Drain				Drain
	1.40 (.055)	Drain				Drain
		Source				Source
			0.48	(.019)	0.76 (.030)
2.21 (.087)			0.84	(.033)	1.30 (.051)
2.21 (.087)			2.59	(.102)	2.79 (.110)
2.59 (.102)	5.45 (.215) BSC		3.00	(.118)	3.18 (.125)

	2-Plcs.
		5.45 (.215) BSC
	These dimensions are equal to the TO-247 without the mounting hole.
		2-Plcs.

Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

050-7013 Rev D 4-2004

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