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Новосибирский государственный технический университет

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APT30M36LLL

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APT30M36B2LL

APT30M36LLL

300V 84A 0.036Ω

POWER MOS 7 R MOSFET

Power MOS 7

is a new generation of low loss, high voltage, N-Channel

T-MAX™

TO-264

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7® by significantly lowering RDS(ON)

and Q . Power MOS 7® combines lower conduction and switching losses

along

with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• Popular T-MAX™ or TO-264 Package

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

APT30M36B2LL_LLL

UNIT

VDSS

Drain-Source Voltage

300

Volts

Continuous Drain Current @ TC = 25°C

Amps

IDM

Pulsed Drain Current 1

336

VGS

Gate-Source Voltage Continuous

±30

Volts

VGSM

Gate-Source Voltage Transient

±40

Total Power Dissipation @ TC = 25°C

568

Watts

Linear Derating Factor

4.55

W/°C

TJ,TSTG

Operating and Storage Junction Temperature Range

-55 to 150

°C

Lead Temperature: 0.063" from Case for 10 Sec.

300

IAR

Avalanche Current 1

(Repetitive and Non-Repetitive)

Amps

EAR

Repetitive Avalanche Energy 1

EAS

Single Pulse Avalanche Energy 4

2500

STATICELECTRICALCHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BVDSS

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

300

Volts

RDS(on)

Drain-Source On-State Resistance 2 (VGS = 10V, ID = 42A)

0.036

Ohms

Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)

100

µA

DSS

Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)

500

IGSS

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

±100

VGS(th)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7151 Rev B 7-2004

DYNAMICCHARACTERISTICS

APT30M36B2LL_LLL

Symbol

Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

Ciss

Input Capacitance

VGS = 0V

6480

Coss

Output Capacitance

1540

VDS = 25V

Crss

Reverse Transfer Capacitance

f = 1 MHz

Total Gate Charge 3

VGS = 10V

115

Qgs

Gate-Source Charge

VDD = 150V

Qgd

Gate-Drain ("Miller") Charge

ID = 84A @ 25°C

td(on)

Turn-on Delay Time

RESISTIVESWITCHING

VGS = 15V

Rise Time

= 150V

td(off)

Turn-off Delay Time

ID = 84A @ 25°C

RG = 0.6Ω

Fall Time

Eon

Turn-on Switching Energy

INDUCTIVESWITCHING@25°C

730

VDD = 200V, VGS = 15V

Eoff

765

Turn-off Switching Energy

ID = 84A, RG = 5Ω

µJ

Eon

Turn-on Switching Energy

INDUCTIVESWITCHING@125°C

855

VDD = 200V, VGS = 15V

Eoff

Turn-off Switching Energy

ID = 84A, RG = 5Ω

845

SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Continuous Source Current

(Body Diode)

Amps

ISM

Pulsed Source Current

(Body Diode)

336

Diode Forward Voltage

2 (V

= 0V, I

= -84A)

1.3

Volts

t rr

Reverse Recovery Time (IS = -84A, dlS/dt = 100A/µs)

530

Q rr

Reverse Recovery Charge

(IS = -84A, dlS/dt = 100A/µs)

11.5

µC

dv/dt

Peak Diode Recovery dv/dt

V/ns

THERMALCHARACTERISTICS

Symbol

Characteristic

MIN

TYP

MAX

UNIT

RθJC

Junction to Case

0.22

°C/W

RθJA

Junction to Ambient

Repetitive Rating: Pulse width limited by maximum junction

4 Starting Tj = +25°C, L = 0.71mH, RG = 25Ω, Peak IL = 84A

temperature

dv/ numbers reflect the limitations of the test circuit rather than the

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

≤ -I

di/

≤ 700A/µs V

≤ 300V T

≤ 150°C

device itself. I

84A

See MIL-STD-750 Method 3471

Eon includes diode reverse recovery.

See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and inforation contained herein.

		0.25
	(°C/W)	0.20	0.9
			0.9
	IMPEDANCE
	IMPEDANCE		0.5
			0.7
		0.15
2004-7	THERMAL,				Note:
2004-7	THERMAL,	0.10			P	t2
			0.3		DM	t1
			0.3
B	θJC	0.05	0.1			Duty Factor D = t1/t	2
Rev	Z		0.1				2
Rev			0.05	SINGLE PULSE	Peak TJ = PDM x ZθJC + TC
7151-		0
7151-		10-5	10-4	10-3	10-2	10-1		1
050				RECTANGULARPULSEDURATION(SECONDS)
050			FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

Typical Performance Curves

RC MODEL

Junction temp. (°C)

	0.0145	0.00193F
Power	0.0871	0.0167F
(watts)	0.0871	0.0167F
(watts)
	0.120	0.197F

Case temperature. (°C)

	FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
	250
		VDS> ID (ON) x	RDS (ON)MAX.
		250µSEC. PULSE TEST
(AMPERES)	150	@ <0.5 % DUTY CYCLE
	200
DRAINCURRENT	50
	100
,			TJ = +25°C
D
I		TJ	= +125°C
		TJ	= +125°C		TJ	= -55°C
	0				TJ	= -55°C
	0
	0	2	4	6	8	10
	VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
		FIGURE4, TRANSFERCHARACTERISTICS

(AMPERES)	70
	70
	60
CURRENT	50
CURRENT	40
	40
DRAIN,	30
DRAIN,	20
	20
D	10
I	10
	0
	25	50		75	100	125	150
			TC, CASE TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
RESISTANCE	2.5
RESISTANCE		ID = 42A
		ID = 42A
-TO-DRAINSOURCEON (NORMALIZED)	2.0	VGS = 10V


	1.5


	1.0


(ON),	0.5




DS	0.0
DS	0.0
R	-50	-25 0		25 50	75	100 125	150
	-50	-25 0		25 50	75	100 125	150

TJ, JUNCTION TEMPERATURE (°C)

FIGURE8,ON-RESISTANCEvs.TEMPERATURE

I , DRAIN CURRENT (AMPERES)

BV ,DRAIN-TO-SOURCEBREAKDOWN R (ON),DRAIN-TO-SOURCEONRESISTANCE DSS DS VOLTAGE(NORMALIZED)

(NORMALIZED)

V (TH),THRESHOLDVOLTAGE GS

APT30M36B2LL_LLL

200
200		V		=15V
			GS
								10V
160									9V
160
120										8V
120
80										7.5V
80
										7V
40										6.5V
										6.5V
										6V
0
	0			5		10		15	20	25	30
	VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.4
					NORMALIZED TO
				VGS = 10V		@ ID = 42A
1.3
1.3
1.2
1.2							VGS=10V
1.1							VGS=10V

1.0
0.9				VGS=20V
0.8
0	20	40	60	80	100	120	140	160
	ID, DRAIN CURRENT (AMPERES)

FIGURE5,RDS(ON)vsDRAINCURRENT

1.20

1.15

1.10

1.05

1.00

0.95

0.90

-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C)

FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE

1.2

1.1

1.0

0.9

0.8

0.7

0.6

-50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C)

FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE

050-7151 Rev B 7-2004

	336	OPERATIONHERE
		OPERATIONHERE
(AMPERES)		LIMITEDBYRDS(ON)
(AMPERES)	100
	100
	50
CURRENT				100µS
CURRENT	10			1mS
DRAIN	5			10mS
	5
D		T	=+25°C
,		C
I		C
		TJ =+150°C
	1	SINGLE PULSE
	1

	1			5				10		50		100	300
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE10,MAXIMUMSAFEOPERATINGAREA
	16
(VOLTS)			ID = 84A
(VOLTS)	14							VDS= 60V
	14
VOLTAGE	12

					V		DS=150V
	10

SOURCE-TO-GATE											VDS= 240V
SOURCE-TO-GATE	2										VDS= 240V
	8
	8
	6
	6
,	4
	4


GS	0
V	0
	0		20	40		60		80	100	120		140	160 180
				Qg, TOTAL GATE CHARGE (nC)

FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE

	80
	70		td(off)
	70
(ns)	60
	50	VDD = 200V
			= 5Ω
d(off)		RG
		RG
		T	= 125°C
t	40	J
and	40	L = 100µH
		L = 100µH

d(on)	30
d(on)						td(on)
t	20					td(on)
	20
	10
	040		60	80	100	120	140
				ID	(A)
		FIGURE 14, DELAY TIMES vs CURRENT
	2000
		VDD = 200V
		RG = 5Ω				Eoff
		T	= 125°C			Eoff
		J

	( J)	1500	L = 100µH
		1500	L = 100µH
			EON includes
	ENERGY	1000	EON includes
	ENERGY	1000	diode reverse recovery.
	SWITCHING

2004-		500	Eon
			Eon
7
7
B
Rev		0
Rev		40	60	80	100	120	140
7151-050					ID (A)
7151-050		FIGURE 16, SWITCHING ENERGY vs CURRENT
		FIGURE 16, SWITCHING ENERGY vs CURRENT

APT30M36B2LL_LLL

20,000

10,000 Ciss

5,000

(pF)							Coss
CAPACITANCE	1,000
	1,000
	500
C,	100						Crss
C,							Crss
	10
	0	10	20		30	40	50
	VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
(AMPERES)	200
(AMPERES)	50	TJ =+150°C
CURRENT	100
CURRENT				TJ =+25°C
				TJ =+25°C
DRAIN	10
DRAIN	5
,REVERSE	5
,REVERSE
DR	1
I	1	0.5	0.7	0.9	1.1	1.3	1.5
	0.3	0.5	0.7	0.9	1.1	1.3	1.5

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE

	140	VDD = 200V
		VDD = 200V
	120	RG = 5Ω
	120	TJ	= 125°C			tf
		TJ	= 125°C			tf
		L = 100µH
	100
(ns)	80
f
t						tr
and	60					tr
and	60
r
t
	40
	20
	0
	40		60	80	100	120	140

ID (A)

FIGURE 15, RISE AND FALL TIMES vs CURRENT

	3000
	2500
( J)	2000					Eoff
ENERGY	2000
ENERGY	1500								Eon
SWITCHING	1500

	1000						VDD = 200V
							ID = 84A
	500						TJ = 125°C
	500						L = 100µH
							EON	includes
	0						diode reverse			recovery.
	0
	0	5	10	15	20	25	30	35	40	45	50
			RG, GATE RESISTANCE (Ohms)
	FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

Typical Performance Curves

APT30M36B2LL_LLL

90%

10%
				GateVoltage	TJ125°C		GateVoltage	TJ125°C
							GateVoltage
						td(off)
td(on)						td(off)
td(on)	t		90%
	t	r	90%	Drain Current			Drain Voltage
		r					Drain Voltage
						90%
						tf
5%				5%		10%
	10%			5%		0
							Drain Current

				Drain Voltage
				Drain Voltage		Switching Energy
Switching Energy						Switching Energy
Figure18,Turn-onSwitchingWaveformsandDefinitions						Figure 19, Turn-off Switching Waveforms and Definitions

APT60DS30

VDD

VDS

D.U.T.

Figure 20, Inductive Switching Test Circuit

T-MAXTM (B2) Package Outline

TO-264 (L) Package Outline

4.69 (.185)			4.60	(.181)
5.31 (.209)		15.49 (.610)	5.21	(.205)	19.51 (.768)
1.49 (.059)		16.26 (.640)	1.80	(.071)	20.50 (.807)
2.49 (.098)			2.01	(.079)		3.10 (.122)
						3.10 (.122)
		5.38 (.212)				3.48 (.137)
		6.20 (.244)
					5.79 (.228)
Drain	20.80 (.819)				6.20 (.244)
	21.46 (.845)	Drain
		Drain		26.49 (1.043)
				25.48 (1.003)
	4.50 (.177) Max.	2.87 (.113)
	4.50 (.177) Max.	3.12 (.123)				2.29 (.090)
		3.12 (.123)				2.29 (.090)
		1.65 (.065)			2.29 (.090)	2.69 (.106)
0.40 (.016)		1.65 (.065)			2.69 (.106)
0.79 (.031)	19.81 (.780)	2.13 (.084)		19.81 (.780)		Gate
	20.32 (.800)	Gate		19.81 (.780)
	20.32 (.800)	Gate		21.39 (.842)
	1.01 (.040)	Drain				Drain
	1.40 (.055)	Drain				Drain
		Source				Source
			0.48	(.019)	0.76 (.030)
2.21 (.087)			0.84	(.033)	1.30 (.051)
2.21 (.087)			2.59	(.102)	2.79 (.110)
2.59 (.102)	5.45 (.215) BSC		3.00	(.118)	3.18 (.125)

	2-Plcs.
		5.45 (.215) BSC
	These dimensions are equal to the TO-247 without the mounting hole.
		2-Plcs.

Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

050-7151 Rev B 7-2004

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