СПП1 / СППП. РГЗ / Паспортные данные MOSFET / IRFP260N+
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PD - 94004A |
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IRFP260N |
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HEXFET® Power MOSFET |
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Advanced Process Technology |
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D |
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VDSS = 200V |
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Dynamic dv/dt Rating |
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175°C Operating Temperature |
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RDS(on) = 0.04Ω |
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Fast Switching |
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Fully Avalanche Rated |
G |
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Ease of Paralleling |
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ID = 50A |
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Simple Drive Requirements |
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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
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TO-247AC |
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Absolute Maximum Ratings |
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Parameter |
Max. |
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Units |
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ID @ TC = 25°C |
Continuous Drain Current, V GS @ 10V |
50 |
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ID @ TC = 100°C |
Continuous Drain Current, V GS @ 10V |
35 |
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A |
IDM |
Pulsed Drain Current • |
200 |
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PD @TC = 25°C |
Power Dissipation |
300 |
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W |
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Linear Derating Factor |
2.0 |
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W/°C |
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VGS |
Gate-to-Source Voltage |
±20 |
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V |
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EAS |
Single Pulse Avalanche Energy‚ |
560 |
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mJ |
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IAR |
Avalanche Current• |
50 |
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A |
EAR |
Repetitive Avalanche Energy• |
30 |
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mJ |
dv/dt |
Peak Diode Recovery dv/dt ƒ |
10 |
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V/ns |
TJ |
Operating Junction and |
-55 to +175 |
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TSTG |
Storage Temperature Range |
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°C |
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Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
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Mounting torque, 6-32 or M3 srew |
10 lbf•in (1.1N•m) |
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Thermal Resistance |
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Parameter |
Typ. |
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Max. |
Units |
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RθJC |
Junction-to-Case |
––– |
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0.50 |
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RθCS |
Case-to-Sink, Flat, Greased Surface |
0.24 |
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––– |
°C/W |
RθJA |
Junction-to-Ambient |
––– |
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40 |
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www.irf.com |
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1 |
10/11/00
IRFP260N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
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Parameter |
Min. |
Typ. |
Max. |
Units |
Conditions |
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V(BR)DSS |
Drain-to-Source Breakdown Voltage |
200 |
––– |
––– |
V |
VGS = 0V, ID = 250µA |
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V(BR)DSS/ TJ |
Breakdown Voltage Temp. Coefficient |
––– |
0.26 |
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V/°C |
Reference to 25°C, I D = 1mA |
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RDS(on) |
Static Drain-to-Source On-Resistance |
––– |
––– |
0.04 |
Ω |
VGS = 10V, ID = 28A „ |
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VGS(th) |
Gate Threshold Voltage |
2.0 |
––– |
4.0 |
V |
VDS = VGS, ID = 250µA |
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gfs |
Forward Transconductance |
27 |
––– |
––– |
S |
VDS = 50V, ID = 28A „ |
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IDSS |
Drain-to-Source Leakage Current |
––– |
––– |
25 |
µA |
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VDS = 200V, VGS = 0V |
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––– |
––– |
250 |
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VDS = 160V, VGS = 0V, TJ = 150°C |
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IGSS |
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Gate-to-Source Forward Leakage |
––– |
––– |
100 |
nA |
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VGS = 20V |
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Gate-to-Source Reverse Leakage |
––– |
––– |
-100 |
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VGS = -20V |
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Qg |
Total Gate Charge |
––– |
––– |
234 |
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ID = 28A |
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Qgs |
Gate-to-Source Charge |
––– |
––– |
38 |
nC |
VDS = 160V |
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Qgd |
Gate-to-Drain ("Miller") Charge |
––– |
––– |
110 |
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VGS = 10V „ |
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td(on) |
Turn-On Delay Time |
––– |
17 |
––– |
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VDD = 100V |
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tr |
Rise Time |
––– |
60 |
––– |
ns |
ID = 28A |
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td(off) |
Turn-Off Delay Time |
––– |
55 |
––– |
RG = 1.8Ω |
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tf |
Fall Time |
––– |
48 |
––– |
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VGS = 10V „ |
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LD |
Internal Drain Inductance |
––– |
5.0 |
––– |
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Between lead, |
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D |
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6mm (0.25in.) |
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nH |
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LS |
Internal Source Inductance |
––– |
13 |
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from package |
G |
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and center of die contact |
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Ciss |
Input Capacitance |
––– |
4057 |
––– |
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VGS = 0V |
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Coss |
Output Capacitance |
––– |
603 |
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pF |
VDS = 25V |
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Crss |
Reverse Transfer Capacitance |
––– |
161 |
––– |
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ƒ = 1.0MHz |
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Source-Drain Ratings and Characteristics
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Parameter |
Min. |
Typ. |
Max. |
Units |
Conditions |
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IS |
Continuous Source Current |
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MOSFET symbol |
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D |
––– |
––– |
50 |
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(Body Diode) |
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showing the |
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A |
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ISM |
Pulsed Source Current |
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integral reverse |
G |
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(Body Diode)• |
––– |
––– |
200 |
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p-n junction diode. |
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S |
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VSD |
Diode Forward Voltage |
––– |
––– |
1.3 |
V |
TJ = 25°C, I S = 28A, VGS = 0V „ |
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trr |
Reverse Recovery Time |
––– |
268 |
402 |
ns |
TJ = 25°C, I F = 28A |
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Qrr |
Reverse Recovery Charge |
––– |
1.9 |
2.8 |
μC |
di/dt = 100A/µs „ |
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ton |
Forward Turn-On Time |
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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Notes:
•Repetitive rating; pulse width limited by max. junction temperature.
‚Starting TJ = 25°C, L = 1.5mH
RG = 25Ω, IAS = 28A.
ƒISD ≤ 28A, di/dt ≤ 486A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„Pulse width ≤ 400µs; duty cycle ≤ 2%.
2 |
www.irf.com |
1000 |
VGS |
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(A) |
TOP |
15V |
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10V |
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8.0V |
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Source Current |
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7.0V |
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6.0V |
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100 |
5.5V |
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5.0V |
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BOTTOM 4.5V |
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10 |
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-to- |
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4.5V |
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Drain |
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1 |
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D |
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I |
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20µs PULSE WIDTH |
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0.1 |
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TJ = 25° C |
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0.1 |
1 |
10 |
100 |
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
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IRFP260N |
1000 |
VGS |
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(A) |
TOP |
15V |
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10V |
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8.0V |
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Current |
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7.0V |
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6.0V |
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100 |
5.5V |
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5.0V |
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BOTTOM4.5V |
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Source |
10 |
4.5V |
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Drain-to- |
1 |
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D |
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20µs PULSE WIDTH
0.1 |
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T |
J |
= 175 |
° |
C |
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0.1 |
1 |
10 |
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100 |
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VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000 |
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Drain-to-Source On Resistance |
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3.5 |
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ID = 50A |
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3.0 |
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2.5 |
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100 |
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= 175° C |
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(Normalized) |
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T |
J |
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2.0 |
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T = 25° C |
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1.5 |
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10 |
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J |
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CurrentSourceDrain(A)to-- |
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1.0 |
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, |
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, |
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D |
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DS(on) |
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I |
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0.5 |
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V DS = 50V |
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VGS = 10V |
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20µs PULSE WIDTH |
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1 |
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R |
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0.0 |
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0 |
20 |
40 60 |
80 100 120 140 160 180 |
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4.0 |
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5.0 |
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6.0 |
7.0 |
8.0 |
9.0 |
10.0 |
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-60 -40 -20 |
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V |
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, Gate-to-Source Voltage (V) |
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T |
, Junction Temperature(° C) |
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GS |
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J |
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Fig 3. Typical Transfer Characteristics |
Fig 4. Normalized On-Resistance |
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Vs. Temperature |
www.irf.com |
3 |
IRFP260N |
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8000 |
VGS |
= 0V, f = 1 MHZ |
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7000 |
Ciss = Cgs + Cgd, Cds |
SHORTED |
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Crss |
= Cgd |
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6000 |
Coss |
= Cds + Cgd |
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5000 |
Ciss |
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4000 |
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Capacitance(pF) 3000 |
Coss |
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C, |
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2000 |
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Crss |
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1000 |
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0 |
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1 |
10 |
100 |
1000 |
VDS, Drain-to-Source Voltage (V)
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= 28A |
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(V) |
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VDS= 160V |
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VDS= 100V |
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Source Voltage |
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12 |
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VDS= 40V |
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, Gate-to- |
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GS |
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V |
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0 |
0 |
50 |
100 |
150 |
200 |
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QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. |
Fig 6. Typical Gate Charge Vs. |
Drain-to-Source Voltage |
Gate-to-Source Voltage |
1000
(A) |
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DrainCurrent |
10 |
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100 |
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T = 175° C |
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J |
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, Reverse |
1 |
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SD |
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I |
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0.1
0.20.6
TJ = 25° C
V GS = 0 V
1.0 |
1.4 |
1.8 |
2.2 |
1000 |
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OPERATION IN THIS AREA LIMITED |
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BY RDS(on) |
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(A) |
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10us |
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Current |
100 |
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100us |
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, Drain |
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10 |
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1ms |
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I |
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TC = 25 ° C |
10ms |
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TJ = 175 °C |
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1 |
Single Pulse |
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1 |
10 |
100 |
1000 |
VSD ,Source-to-Drain Voltage (V) |
V , Drain-to-Source Voltage (V) |
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DS |
Fig 7. Typical Source-Drain Diode |
Fig 8. Maximum Safe Operating Area |
Forward Voltage |
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4 |
www.irf.com |
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IRFP260N |
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VDS |
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RD |
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50 |
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50 |
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VGS |
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D.U.T. |
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RG |
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40 |
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+ |
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40 |
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VDD |
Current(A) |
(A) |
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- |
DrainCurrent 20 |
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Fig 10a. Switching Time Test Circuit |
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10V |
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30 |
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Pulse Width ≤ 1 µs |
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Duty Factor ≤ 0.1 % |
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Drain |
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20 |
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I |
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V |
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DS |
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I |
10 |
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90% |
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10 |
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0 |
25 |
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75 |
100 |
125 |
150 |
175 |
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0 |
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25 |
50 |
T |
75 |
100 |
125 |
150 |
175 |
10% |
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, Case Temperature ( ° C) |
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T |
C |
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, Case Temperature ( ° C) |
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VGS |
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C |
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td(on) |
tr |
td(off) |
tf |
Fig 9. Maximum Drain Current Vs. |
Fig 10b. Switching Time Waveforms |
Case Temperature |
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1 |
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D = 0.50 |
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thJC |
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Response(Z |
0.1 |
0.20 |
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0.10 |
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0.05 |
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0.02 |
SINGLE PULSE |
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0.01 |
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PDM |
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Thermal |
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(THERMAL RESPONSE) |
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0.01 |
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t1 |
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t2 |
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Notes: |
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1. Duty factor D = t1 / t 2 |
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0.001 |
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2. Peak TJ = P DM x ZthJC + TC |
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0.00001 |
0.0001 |
0.001 |
0.01 |
0.1 |
1 |
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t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com |
5 |
IRFP260N |
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(mJ) |
1500 |
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ID |
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1 5 V |
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TOP |
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11A |
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Energy |
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20A |
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D R IV E R |
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BOTTOM |
28A |
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V D S |
L |
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Avalanche |
1000 |
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R G |
D .U .T |
+ |
VD D |
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IA S |
- |
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A |
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20V |
0 .0 1Ω |
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Pulse |
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tp |
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500 |
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Fig 12a. Unclamped Inductive Test Circuit |
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V (B R )D S S |
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AS |
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tp |
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E |
0 |
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25 |
50 |
75 |
100 |
125 |
150 |
175 |
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Starting TJ , Junction Temperature (° C) |
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Fig 12c. Maximum Avalanche Energy |
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Vs. Drain Current |
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I A S |
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Fig 12b. Unclamped Inductive Waveforms |
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Current Regulator |
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Same Type as D.U.T. |
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50KΩ |
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12V |
.2μF |
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QG |
.3μF |
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10 V |
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+ |
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D.U.T. |
VDS |
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QGS |
QGD |
- |
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VGS |
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VG |
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3mA |
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Charge |
IG |
ID |
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Current Sampling |
Resistors |
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Fig 13a. Basic Gate Charge Waveform |
Fig 13b. Gate Charge Test Circuit |
6 |
www.irf.com |
IRFP260N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
‚
-
•
RG
+Circuit Layout Considerations
∙Low Stray Inductance
ƒ∙ Ground Plane
∙Low Leakage Inductance Current Transformer
-
-„ +
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∙ |
dv/dt controlled by RG |
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+ |
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∙ |
Driver same type as D.U.T. |
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- VDD |
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∙ |
ISD controlled by Duty Factor "D" |
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∙ |
D.U.T. - Device Under Test |
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Driver Gate Drive |
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P.W. |
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Period |
D = |
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P.W. |
Period |
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VGS=10V * |
D.U.T. ISD Waveform |
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Reverse |
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Recovery |
Body Diode Forward |
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Current |
Current |
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di/dt |
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D.U.T. VDS Waveform |
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Diode Recovery |
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dv/dt |
VDD |
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Re-Applied |
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Voltage |
Body Diode |
Forward Drop |
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Inductor Curent |
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Ripple ≤ 5% |
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ISD |
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com |
7 |
IRFP260N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
|
15.90 (.626) |
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3.65 (.143) |
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3.55 (.140) |
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15.30 (.602) |
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0.25 (.010) |
M |
D B M |
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- B - |
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- A - |
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5 .50 (.217) |
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20 .30 (.800) |
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5.50 (.217) |
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19 .70 (.775) |
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2X |
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4.50 (.177) |
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1 |
2 |
3 |
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- C - |
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14.8 0 (.583) |
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4 .30 (.170) |
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14.2 0 (.559) |
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3 .70 (.145) |
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2 .40 (.094) |
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1 .40 (.056) |
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2 .00 (.079) |
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3X |
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1 .00 (.039) |
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2X |
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0 .25 (.010) M C |
A |
S |
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5.45 (.215) |
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2X |
3 .40 |
(.133) |
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3 .00 |
(.118) |
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- D -
5 .30 (.209)
4 .70 (.185)
2 .50 (.089)
1 .50 (.059)
4
NO TE S :
1DIME N S IO NIN G & TO LE R A N CING P E R A N S I Y 14.5M , 1982.
2CO N TR O LLIN G DIME N S IO N : IN CH .
3CO N F O RM S TO JE D E C O U TLINE TO -247-A C .
0.80 |
(.031) |
LE A D A S S IG N M E N TS |
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3X 0.40 |
(.016) |
1 |
- G A TE |
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2.60 |
(.102) |
2 |
- DR A IN |
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3 |
- S O UR C E |
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2.20 |
(.087) |
4 |
- DR A IN |
|
Part Marking Information
TO-247AC
EXAMP LE : TH IS |
IS A N |
IR F PE30 |
|
A |
W ITH ASSEMBLY |
IN TE R N ATIO N AL |
PAR T N U MBER |
||
LO T |
C O D E |
3A1Q |
IR FPE 30 |
|
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R ECTIFIER |
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LOG O |
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3A1 Q 9302 |
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ASSEMBLY |
D A TE C O D E |
|
|
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LOT COD E |
(YYW W ) |
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YY = YEAR |
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W W W EEK |
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 |
Tel: 886-(0)2 2377 9936 |
Data and specifications subject to change without notice. 10/00 |
|
8 |
www.irf.com |