СПП1 / СППП. РГЗ / Паспортные данные MOSFET / APT50M50L2LL
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APT50M50L2LL
500V 89A 0.050Ω
POWER MOS 7 R MOSFET
Power MOS 7 |
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is a new generation of low loss, high voltage, N-Channel |
TO-264 |
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Max |
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enhancement mode power MOSFETS. Both conduction and switching |
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losses are addressed with Power MOS 7® |
by significantly lowering R |
DS(ON) |
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and Qg. Power MOS 7® combines lower conduction and switching losses |
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along with exceptionally fast switching |
speeds inherent with APT's |
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patented metal gate structure.
• Lower Input Capacitance |
• Increased Power Dissipation |
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• Lower Miller Capacitance |
• Easier To Drive |
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• Lower Gate Charge, Qg |
• Popular TO-264 MAX Package |
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MAXIMUM RATINGS |
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All Ratings: TC = 25°C unless otherwise specified. |
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Symbol |
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APT50M50L2LL |
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UNIT |
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VDSS |
Drain-Source Voltage |
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500 |
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Volts |
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ID |
Continuous Drain Current @ TC = 25°C |
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89 |
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Amps |
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IDM |
Pulsed Drain Current |
1 |
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356 |
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VGS |
Gate-Source Voltage Continuous |
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±30 |
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Volts |
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VGSM |
Gate-Source Voltage Transient |
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±40 |
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PD |
Total Power Dissipation @ TC = 25°C |
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893 |
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Watts |
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Linear Derating Factor |
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7.14 |
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W/°C |
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TJ,TSTG |
Operating and Storage Junction Temperature Range |
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-55 to 150 |
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°C |
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TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
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300 |
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IAR |
Avalanche Current 1 |
(Repetitive and Non-Repetitive) |
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89 |
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Amps |
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EAR |
Repetitive Avalanche Energy 1 |
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50 |
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mJ |
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EAS |
Single Pulse Avalanche Energy 4 |
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3200 |
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STATICELECTRICALCHARACTERISTICS |
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Symbol |
Characteristic / Test Conditions |
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BVDSS |
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) |
500 |
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Volts |
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RDS(on) |
Drain-Source On-State Resistance 2 (VGS = 10V, 44.5A) |
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0.050 |
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Ohms |
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I |
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) |
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100 |
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µA |
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DSS |
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) |
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500 |
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IGSS |
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) |
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±100 |
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nA |
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VGS(th) |
Gate Threshold Voltage (VDS = VGS, ID = 5mA) |
3 |
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5 |
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Volts |
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CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7043 Rev C 2-2004
DYNAMIC CHARACTERISTICS |
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APT50M50L2LL |
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Symbol |
Characteristic |
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Test Conditions |
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MIN |
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TYP |
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Ciss |
Input Capacitance |
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VGS = 0V |
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10550 |
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Coss |
Output Capacitance |
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2060 |
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pF |
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VDS = 25V |
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Crss |
Reverse Transfer Capacitance |
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f = 1 MHz |
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105 |
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Qg |
Total Gate Charge 3 |
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VGS = 10V |
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200 |
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Qgs |
Gate-Source Charge |
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VDD = 250V |
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50 |
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nC |
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ID = 89A @ 25°C |
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Qgd |
Gate-Drain ("Miller") Charge |
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105 |
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td(on) |
Turn-on Delay Time |
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RESISTIVESWITCHING |
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24 |
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VGS = 15V |
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Rise Time |
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22 |
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V |
= 250V |
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ns |
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DD |
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td(off) |
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56 |
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Turn-off Delay Time |
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ID = 89A @ 25°C |
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RG = 0.6Ω |
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tf |
Fall Time |
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8 |
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Eon |
Turn-on Switching Energy |
6 |
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INDUCTIVESWITCHING@25°C |
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1490 |
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VDD = 333V, VGS = 15V |
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Eoff |
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1650 |
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Turn-off Switching Energy |
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ID = 89A, RG = 3Ω |
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µJ |
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Eon |
Turn-on Switching Energy |
6 |
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INDUCTIVESWITCHING@125°C |
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2105 |
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VDD = 333V, VGS = 15V |
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Eoff |
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Turn-off Switching Energy |
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ID = 89A, RG = 3Ω |
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1835 |
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SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS |
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Symbol |
Characteristic / Test Conditions |
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MIN |
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TYP |
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MAX |
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IS |
Continuous Source Current |
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(Body Diode) |
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89 |
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ISM |
Pulsed Source Current |
1 |
(Body Diode) |
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V |
Diode Forward Voltage |
2 (V |
GS |
= 0V, I |
S |
= -89A) |
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1.3 |
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Volts |
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SD |
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t rr |
Reverse Recovery Time (IS = -89A, dlS/dt = 100A/µs) |
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680 |
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Q rr |
Reverse Recovery Charge (IS = -89A, dlS/dt = 100A/µs) |
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17.0 |
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µC |
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dv/dt |
Peak Diode Recovery dv/dt |
5 |
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V/ns |
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THERMALCHARACTERISTICS |
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Symbol |
Characteristic |
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MIN |
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TYP |
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MAX |
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Rθ JC |
Junction to Case |
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0.14 |
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°C/W |
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Rθ JA |
Junction to Ambient |
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40 |
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1 |
Repetitive Rating: Pulse width limited by maximum junction |
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Starting Tj = +25°C, L = 0.81mH, RG = 25Ω , Peak IL = 89A |
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temperature |
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5 |
dv/dt numbers reflect the limitations of the test circuit rather than the |
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2 |
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% |
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device itself. IS ≤ -89A |
di/dt ≤ 700A/µs |
VR ≤ |
500V TJ ≤ |
150°C |
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3 See MIL-STD-750 Method 3471 |
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6 Eon includes diode reverse recovery. |
See figures 18, 20. |
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APT Reserves the right to change, without notice, the specifications and information contained herein.
2-2004 |
THERMALIMPEDANCE (°C/W) |
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C |
θ JC |
Rev |
Z |
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050-7043 |
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0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
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10-5
0.9
0.7
0.5 |
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Note: |
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DM |
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P |
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0.3 |
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t2 |
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Duty Factor D = t1/t |
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0.1 |
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Peak TJ = PDM x Zθ JC + TC |
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0.05 |
SINGLE PULSE |
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10-4 |
10-3 |
10-2 |
10-1 |
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RECTANGULARPULSEDURATION(SECONDS) |
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FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION |
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Typical Performance Curves
RC MODEL |
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Junction |
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temp. (°C) |
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0.0622 |
0.0191F |
Power |
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(watts) |
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0.0778 |
0.209F |
Case temperature. (°C) 
FIGURE2,TRANSIENT THERMAL IMPEDANCE MODEL
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180 |
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160 |
VDS> ID (ON) x |
RDS(ON) MAX. |
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250µSEC. PULSE TEST |
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(AMPERES) |
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@ <0.5 % DUTY CYCLE |
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140 |
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120 |
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CURRENT |
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TJ = -55°C |
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TJ = +125°C |
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DRAIN, |
60 |
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TJ = +25°C |
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40 |
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D |
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VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE4,TRANSFERCHARACTERISTICS |
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(AMPERES) |
80 |
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DRAIN, |
30 |
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25 |
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100 |
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150 |
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TC, CASE TEMPERATURE (°C) |
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FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE |
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RESISTANCE |
2.5 |
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ID = 44.5A |
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SOURCE-TO-DRAINON (NORMALIZED) |
2.0 |
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VGS = 10V |
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1.5 |
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1.0 |
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0.5 |
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DS(ON) |
0.0 |
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R |
-50 |
-25 0 |
25 50 |
75 |
100 125 |
150 |
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TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
APT50M50L2LL
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200 |
15 &10V |
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7.5V |
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(AMPERES) |
180 |
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120 |
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160 |
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7V |
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140 |
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CURRENT |
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6.5V |
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100 |
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80 |
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DRAIN |
60 |
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6V |
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40 |
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5.5V |
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D |
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I |
20 |
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5V |
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0 |
0 |
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5 |
10 |
15 |
20 |
25 |
30 |
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VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS |
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RESISTANCE |
1.4 |
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NORMALIZED TO |
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VGS = 10V @ |
ID = 44.5A |
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1.3 |
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ON |
1.2 |
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SOURCE-TO-DRAIN |
1.1 |
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VGS=10V |
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1.0 |
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VGS=20V |
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, |
0.9 |
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DS(ON) |
0.8 |
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R |
0 |
20 |
40 |
60 |
80 |
100 120 |
140 |
160 |
180 |
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ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
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1.15 |
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DRAIN-TO-SOURCEBREAKDOWN |
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1.10 |
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VOLTAGE(NORMALIZED) |
1.05 |
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1.00 |
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0.95 |
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, |
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0.90 |
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DSS |
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BV |
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0.85-50 |
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-25 |
0 |
25 |
50 |
75 |
100 125 |
150 |
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TJ, JUNCTION TEMPERATURE (°C) |
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FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE |
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1.2 |
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THRESHOLDVOLTAGE |
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1.1 |
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(NORMALIZED) |
1.0 |
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0.9 |
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0.8 |
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, |
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GS(TH) |
0.7 |
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V |
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0.6-50 |
-25 |
0 |
25 |
50 |
75 |
100 125 |
150 |
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TC, CASE TEMPERATURE (°C) |
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FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
050-7043 Rev C 2-2004
050-7043 Rev C 2-2004
|
356 |
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OPERATIONHERE |
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(AMPERES) |
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LIMITEDBYRDS(ON) |
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100 |
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100µS |
CURRENT |
10 |
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,DRAIN |
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1mS |
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T =+25°C |
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10mS |
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D |
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I |
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C |
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TJ =+150°C |
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1 |
SINGLE PULSE |
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1 |
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10 |
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100 |
500 |
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VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE10,MAXIMUMSAFEOPERATINGAREA |
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16 |
ID = 89A |
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(VOLTS) |
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12 |
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VDS=100V |
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VOLTAGE |
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VDS=400V |
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VDS=250V |
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-GATETO-SOURCE |
8 |
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4 |
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, |
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GS |
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V |
00 |
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50 |
100 |
150 |
200 |
250 |
300 |
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Qg, TOTAL GATE CHARGE (nC) |
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FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
|
100 |
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90 |
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td(off) |
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80 |
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(ns) |
70 |
VDD = 333V |
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60 |
RG = 3Ω |
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d(off) |
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T |
= 125°C |
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t |
50 |
J |
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and |
L = 100µH |
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40 |
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d(on) |
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30 |
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t |
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20 |
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td(on) |
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10 |
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0 |
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10 |
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30 |
50 |
70 |
90 |
110 |
130 |
150 |
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ID |
(A) |
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FIGURE 14, DELAY TIMES vs CURRENT |
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4000 |
V |
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= 333V |
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DD |
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3500 |
RG = 3Ω |
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TJ = 125°C |
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( J) |
3000 |
L = 100µH |
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2500 |
EON |
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includes |
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ENERGY |
diode reverse recovery. |
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2000 |
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SWITCHING |
1500 |
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Eon |
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1000 |
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Eoff |
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500 |
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0 |
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10 |
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30 |
50 |
70 |
90 |
110 |
130 |
150 |
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ID (A) |
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FIGURE 16, SWITCHING ENERGY vs CURRENT
|
30,000 |
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APT50M50L2LL |
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10,000 |
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Ciss |
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(pF) |
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Coss |
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CAPACITANCE |
1,000 |
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C, |
100 |
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Crss |
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10 |
0 |
10 |
20 |
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30 |
40 |
50 |
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VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) |
||||||
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FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE |
|||||||
(AMPERES) |
200 |
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100 |
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TJ =+25°C |
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TJ =+150°C |
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CURRENT |
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,REVERSE DRAIN |
10 |
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DR |
1 |
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I |
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0.5 |
0.7 |
0.9 |
1.1 |
1.3 |
1.5 |
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0.3 |
|||||||
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
|
180 |
VDD = 333V |
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160 |
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RG = 3Ω |
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tf |
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140 |
TJ = 125°C |
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L = 100µH |
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120 |
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(ns) |
100 |
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f |
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t |
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and |
80 |
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r |
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t |
60 |
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40 |
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tr |
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20 |
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0 |
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10 |
30 |
50 |
70 |
90 |
110 |
130 |
150 |
|||
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ID (A) |
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FIGURE 15, RISE AND FALL TIMES vs CURRENT |
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|
9000 |
VDD = 333V |
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8000 |
ID = 89A |
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Eoff |
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7000 |
TJ = 125°C |
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( J) |
L = 100µH |
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6000 |
EON includes |
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ENERGY |
diode |
reverse recovery. |
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5000 |
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SWITCHING |
4000 |
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3000 |
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Eon |
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2000 |
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1000 |
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0 |
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0 |
5 |
10 |
15 |
20 |
25 |
30 |
35 |
40 |
45 |
50 |
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|
RG, GATE RESISTANCE (Ohms) |
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||||||
|
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE |
||||||||||
Typical Performance Curves
10 % |
|
|
Gate Voltage |
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td(on) |
|
|
TJ = 125 C |
|
|
Drain Current |
|
90% |
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tr
5 %
10 %
Drain Voltage
Switching Energy
Figure18,Turn-onSwitchingWaveforms and Definitions
APT60DF60
VDD |
IC |
VCE |
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT50M50L2LL
90% |
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Gate Voltage |
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t |
d(off) |
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TJ = 125 C |
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90% |
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Drain Voltage |
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tf
10%
0
Switching Energy |
Drain Current |
|
Figure 19, Turn-off Switching Waveforms and Definitions
TO-264 MAXTM(L2) Package Outline
4.60 |
(.181) |
|
|
5.21 |
(.205) |
19.51 (.768) |
|
1.80 |
(.071) |
20.50 (.807) |
|
2.01 |
(.079) |
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|
5.79 (.228) |
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|
6.20 (.244) |
|
Drain |
25.48 (1.003) |
|
|
26.49 (1.043) |
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2.29 (.090) |
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|
2.29 (.090) |
2.69 (.106) |
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|
2.69 (.106) |
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|
19.81 (.780) |
Gate |
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|
21.39 (.842) |
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Drain |
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Source |
0.48 |
(.019) |
0.76 (.030) |
|
0.84 |
(.033) |
1.30 (.051) |
|
2.59 |
(.102) |
2.79 (.110) |
|
3.00 |
(.118) |
3.18 (.125) |
|
5.45 (.215) BSC 
2-Plcs.
Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7043 Rev C 2-2004