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Новосибирский государственный технический университет

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APT20M36BLL

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APT20M36BLL

APT20M36SLL

200V 65A

0.036Ω

POWER MOS 7 R MOSFET

BLL

D3PAK

Power MOS 7

is a new generation of low loss, high voltage, N-Channel

TO-247

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7® by significantly lowering R

DS(ON)

SLL

and Qg. Power MOS 7® combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• TO-247 or Surface Mount D3PAK Package

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

APT20M36BLL_SLL

UNIT

VDSS

Drain-Source Voltage

200

Volts

Continuous Drain Current @ TC = 25°C

Amps

IDM

Pulsed Drain Current

260

VGS

Gate-Source Voltage Continuous

±30

Volts

VGSM

Gate-Source Voltage Transient

±40

Total Power Dissipation @ TC = 25°C

329

Watts

Linear Derating Factor

2.63

W/°C

TJ,TSTG

Operating and Storage Junction Temperature Range

-55 to 150

°C

Lead Temperature: 0.063" from Case for 10 Sec.

300

IAR

Avalanche Current 1

(Repetitive and Non-Repetitive)

Amps

EAR

Repetitive Avalanche Energy 1

EAS

Single Pulse Avalanche Energy 4

1300

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BVDSS

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

200

Volts

RDS(on)

Drain-Source On-State Resistance 2 (VGS = 10V, ID = 32.5A)

0.036

Ohms

Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)

100

µA

DSS

Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)

500

IGSS

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

±100

VGS(th)

Gate Threshold Voltage (VDS = VGS, ID = 1mA)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7007 Rev C 7-2004

DYNAMIC CHARACTERISTICS

APT20M36BLL_SLL

Symbol

Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

Ciss

Input Capacitance

VGS = 0V

3080

Coss

Output Capacitance

VDS = 25V

990

Crss

Reverse Transfer Capacitance

f = 1 MHz

Total Gate Charge 3

VGS = 10V

Qgs

Gate-Source Charge

VDD = 100V

ID = 65A @ 25°C

Qgd

Gate-Drain ("Miller") Charge

td(on)

Turn-on Delay Time

RESISTIVE SWITCHING

VGS = 15V

Rise Time

VDD = 100V

d(off)

Turn-off Delay Time

ID = 65A @ 25°C

Fall Time

RG = 1.6Ω

Eon

Turn-on Switching Energy

INDUCTIVE SWITCHING @ 25°C

490

VDD = 133V, VGS = 15V

Eoff

Turn-off Switching Energy

300

= 65A, R

= 5Ω

µJ

Eon

Turn-on Switching Energy

INDUCTIVE SWITCHING @ 125°C

600

VDD = 133V VGS = 15V

Eoff

Turn-off Switching Energy

315

ID = 65A, RG = 5Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Continuous Source Current

(Body Diode)

Amps

ISM

Pulsed Source Current 1

(Body Diode)

260

Diode Forward Voltage 2 (V

= 0V, I

= -65A)

1.3

Volts

t rr

Reverse Recovery Time (IS = -65A, dlS/dt = 100A/µs)

280

Q rr

Reverse Recovery Charge

(IS = -65A, dlS/dt = 100A/µs)

3.5

µC

dv/dt

Peak Diode Recovery dv/dt

V/ns

THERMAL CHARACTERISTICS

Symbol

Characteristic

MIN

TYP

MAX

UNIT

RθJC

Junction to Case

0.38

°C/W

RθJA

Junction to Ambient

Repetitive Rating: Pulse width limited by maximum junction

4 Starting Tj = +25°C, L = 0.62mH, RG = 25Ω, Peak IL = 65A

temperature

dv/dt numbers reflect the limitations of the test circuit rather than the

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

device itself. I

≤ -I

65A

di/

≤ 700A/µs V

≤ 200V T

≤ 150°C

3 See MIL-STD-750 Method 3471

Eon includes diode reverse recovery.

See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and inforation contained herein.

	(°C/W)	0.40
	(°C/W)	0.35	0.9
		0.35	0.9
	IMPEDANCE	0.30	0.5
			0.7
		0.25
7C-2004	THERMAL,	0.20			Note:
7C-2004	THERMAL,	0.10			P	t2
		0.15	0.3		DM	t1
			0.3
Rev	θJC		0.1			Duty Factor D = t1/t	2
Rev	Z	0.05	0.1	SINGLE PULSE

7007-			0.05		Peak TJ = PDM x ZθJC + TC
7007-		10-5	10-4	10-3	10-2	10-1		1
050		0
050				RECTANGULARPULSEDURATION(SECONDS)
			FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

Typical Performance Curves

RC MODEL

Junction temp. (°C)

	0.0329	0.00334F
Power	0.158	0.00802F
(watts)	0.158	0.00802F
(watts)
	0.189	0.165F

Case temperature. (°C)

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL

	140		VDS> ID (ON) x	RDS (ON)MAX.
			VDS> ID (ON) x	RDS (ON)MAX.
	120		250 µSEC. PULSE TEST
(AMPERES)	120		@ <0.5 % DUTY CYCLE
(AMPERES)	100
	100
CURRENT	80
CURRENT	60
DRAIN	60
DRAIN	40			TJ = +25°C
	40
,	20		TJ = +125°C
I	20		TJ = +125°C
D
	0					TJ = -55°C
	0	0	2	4	6	8	10
			VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
			FIGURE4, TRANSFERCHARACTERISTICS
	70

(AMPERES)	60
(AMPERES)	50
	50
CURRENT	40
CURRENT	30
DRAIN,	30
DRAIN,	20
	20
I	10
D
	0
	25	50	75	100	125	150
		TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAINCURRENT vs CASE TEMPERATURE
RESISTANCE	2.5
RESISTANCE		ID = 32.5A
		ID = 32.5A
		VGS = 10V
SOURCE-TO-DRAINON (NORMALIZED)	2.0
SOURCE-TO-DRAINON (NORMALIZED)	1.5
	1.5
	1.0
	0.5
(ON),
DS	0.0
R	-50	-25 0	25 50	75	100 125	150
	-50	-25 0	25 50	75	100 125	150

TJ, JUNCTION TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

APT20M36BLL_SLL

		200	VGS=15V
			VGS=15V
(AMPERES)		120						10V
		160
CURRENT								9V
CURRENT		80							8V
									8V

DRAIN,									7.5V
DRAIN,		40							7V
									7V
I									6.5V
D
									6V
		0	0	5		10	15	20	25	30
			VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
		FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RESISTANCE		1.4		NORMALIZED TO
RESISTANCE				NORMALIZED TO
				VGS = 10V	@	ID = 32.5A
		1.3
ON		1.2
SOURCE-TO-DRAIN		1.1					VGS=10V
		1.1					VGS=10V
		1.0
(ON),		0.9					VGS=20V
							VGS=20V

DS		0.8
R		0.8	0	20		40		60	80	100
R

				ID, DRAIN CURRENT (AMPERES)
		1.15		FIGURE 5, RDS(ON) vs DRAIN CURRENT
SOURCE-TO-DRAINBREAKDOWN	(NORMALIZED)VOLTAGE	1.15
SOURCE-TO-DRAINBREAKDOWN	(NORMALIZED)VOLTAGE	0.95
		1.10
		1.05
		1.00
,
DSS
BV		0.90-50
		0.90-50		-25	0	25	50	75	100 125	150
				TJ, JUNCTION TEMPERATURE (°C)
		FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
		1.2
THRESHOLDVOLTAGE		1.1
	(NORMALIZED)	1.0
	(NORMALIZED)	0.8
		0.9
(TH),
GS		0.7
V
		0.6	-50	-25	0	25	50	75	100 125	150
			-50	-25	0	25	50	75	100 125	150

TC, CASE TEMPERATURE (°C)

FIGURE 9,THRESHOLDVOLTAGEvsTEMPERATURE

050-7007 Rev C 7-2004

	260
	OPERATIONHERE
	LIMITEDBYRDS(ON)
(AMPERES)	100
(AMPERES)	50		100µS
	50
CURRENT	10
	10
DRAIN,			1mS
DRAIN,	5		10mS
	5
D	T	=+25°C
I	C
	TJ =+150°C
	SINGLE PULSE
	1

1 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

	16	ID = 65A
(VOLTS)		ID = 65A		VDS=40V
(VOLTS)	14			VDS=40V
	14
VOLTAGE	12				VDS=160V
VOLTAGE	10		VDS=100V		VDS=160V
			VDS=100V
TO-GATE-SOURCE
TO-GATE-SOURCE	2
	8
	6
	4
,
GS	0
V	0
	0	50	100	150	200	250	300
		Qg, TOTAL GATE CHARGE (nC)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

	45
	40						td(off)
							td(off)
	35
(ns)	30	VDD = 133V
d(off)	25	RG = 5Ω
d(off)	25	T	J	= 125°C
t			J
and	20	L = 100µH
	20
						td(on)
d(on)	15					td(on)
	15

t
	10
	5
	030			40	50	60	70	80	90	100
						ID	(A)
	FIGURE 14, DELAY TIMES vs CURRENT
	1200
		VDD = 133V
	1000	RG = 5Ω
	1000	TJ = 125°C
		TJ = 125°C

	J)(		L = 100µH
			L = 100µH
	ENERGY	800	EON	includes
		800	diode reverse recovery.
		600



2004-	SWITCHING					Eon
2004-	SWITCHING	400
7		400							Eoff
7		200							Eoff
C		200
C
Rev		0
		30		40	50		60		70	80	90	100
7007-050								ID (A)
7007-050		FIGURE 16, SWITCHING ENERGY vs CURRENT
		FIGURE 16, SWITCHING ENERGY vs CURRENT

APT20M36BLL_SLL

	10,000
	5,000							Ciss
								Ciss
(pF)	1,000							Coss
CAPACITANCEC,								Coss
CAPACITANCEC,	500							Crss
	500
	100
	50
	10	0	10		20	30	40	50
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
(AMPERES)	200
(AMPERES)	50		TJ =+150°C
CURRENT	100
CURRENT						TJ =+25°C
						TJ =+25°C
DRAIN	10
DRAIN	5
,REVERSE	5
,REVERSE
DR	1
I	1	0.3	0.5	0.7	0.9	1.1	1.3	1.5
		0.3	0.5	0.7	0.9	1.1	1.3	1.5

VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE

	120	VDD = 133V
		VDD = 133V
		RG = 5Ω
	100	TJ = 125°C
		L = 100µH
(ns)	80
(ns)				tf
f				tf
t	60
and	60
and						tr
r						tr
t
	40
	20
	030	40	50	60	70	80	90	100
				ID	(A)
	FIGURE 15, RISE AND FALL TIMES vs CURRENT
	1000

( J)	800
	800			Eon

ENERGY
ENERGY	600
SWITCHING	600				Eoff				TJ = 125°C
SWITCHING	200				Eoff				TJ = 125°C
	400
	400
									VDD = 133V
									ID = 65A
									L = 100µH
									L = 100µH
									EON	includes
									diode reverse			recovery.
	0

		0	5	10	15	20	25	30		35	40	45	50
				RG, GATE RESISTANCE (Ohms)
	FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

Typical Performance Curves

10%	GateVoltage

TJ125°C

td(on)


	tr		Drain Current
	tr

5%		90%	5%
		90%

10%			Drain Voltage

Switching Energy

Figure 18, Turn-on Switching Waveforms and Definitions

APT60DS30

VDD

VDS

D.U.T.

Figure 20, Inductive Switching Test Circuit

APT20M36BLL_SLL

	90%			GateVoltage	TJ125°C
	90%

td(off)
td(off)

		90%
				Drain Voltage
			tf
			tf
				10%
				0
				Drain Current
Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

TO-247 Package Outline

D3PAK Package Outline

4.69 (.185)	6.15 (.242) BSC		Drain Sink)(Heat	4.98	(.196)		15.95 (.628)			13.41 (.528)
5.31 (.209)	6.15 (.242) BSC		Drain Sink)(Heat	5.08	(.200)		16.05 (.632)			13.51 (.532)
5.31 (.209)	15.49 (.610)			5.08	(.200)		16.05 (.632)		1.04 (.041)	13.51 (.532)
1.49 (.059)	16.26 (.640)			1.47	(.058)				1.04 (.041)
1.49 (.059)				1.47	(.058)				1.15 (.045)
2.49 (.098)				1.57	(.062)				1.15 (.045)
2.49 (.098)				1.57	(.062)
		5.38 (.212)
		6.20 (.244)
Drain							Revised		13.79 (.543)	Revised	11.51 (.453)
	20.80 (.819)						Revised		13.79 (.543)	8/29/97	11.61 (.457)
	21.46 (.845)						4/18/95		13.99 (.551)
	21.46 (.845)						4/18/95		13.99 (.551)
		3.50 (.138)
		3.81 (.150)
				0.46	(.018)
				0.56	(.022) {3 Plcs}				1.27 (.050)
				0.020 (.001)					1.27 (.050)
		2.87 (.113)		0.020 (.001)					1.40 (.055)	3.81 (.150)
	4.50 (.177) Max.	2.87 (.113)		0.178 (.007)				1.98 (.078)		3.81 (.150)
		3.12 (.123)		2.67	(.105)			1.98 (.078)		4.06 (.160)
				2.67	(.105)			2.08 (.082)		(Base of Lead)
0.40 (.016)		1.65 (.065)		2.84	(.112)	1.22 (.048)		2.08 (.082)		(Base of Lead)
0.40 (.016)		1.65 (.065)		2.84	(.112)	1.22 (.048)
0.79 (.031)	19.81 (.780)	2.13 (.084)				1.32 (.052)				Heat Sink (Drain)
	20.32 (.800)	Gate						5.45 (.215) BSC		and Leads
	1.01 (.040)	Gate						5.45 (.215) BSC		and Leads
	1.40 (.055)	Drain						{2 Plcs.}		are Plated
		Drain
		Source
2.21 (.087)									Source
2.21 (.087)									Drain
2.59 (.102)	5.45 (.215) BSC								Drain
	2-Plcs.								Gate

Dimensions in Millimeters and (Inches)

Dimensions in Millimeters (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

050-7007 Rev C 7-2004

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