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Новосибирский государственный технический университет

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APT30M75BLL

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APT30M75BLL

APT30M75SLL

300V 44A 0.075Ω

POWER MOS 7

MOSFET

BLL

Power MOS 7® is a new generation of low loss, high voltage, N-Channel

D3PAK

TO-247

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7®

by significantly lowering RDS(ON)

and Q . Power MOS 7® combines lower conduction and switching losses

SLL

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• TO-247 or Surface Mount D3PAK Package

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

APT30M75

UNIT

VDSS

Drain-Source Voltage

300

Volts

Continuous Drain Current @ TC = 25°C

Amps

IDM

Pulsed Drain Current

176

VGS

Gate-Source Voltage Continuous

±30

Volts

VGSM

Gate-Source Voltage Transient

±40

Total Power Dissipation @ TC = 25°C

329

Watts

Linear Derating Factor

2.63

W/°C

TJ,TSTG

Operating and Storage Junction Temperature Range

-55 to 150

°C

Lead Temperature: 0.063" from Case for 10 Sec.

300

IAR

Avalanche Current 1

(Repetitive and Non-Repetitive)

Amps

EAR

Repetitive Avalanche Energy 1

EAS

Single Pulse Avalanche Energy 4

1300

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

DSS

Drain-Source Breakdown Voltage (V

= 0V, I

= 250µA)

300

Volts

ID(on)

On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)

Amps

RDS(on)

Drain-Source On-State Resistance 2

(VGS = 10V, 22A)

0.075

Ohms

IDSS

Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)

100

µA

Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)

500

IGSS

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

±100

VGS(th)

Gate Threshold Voltage (VDS = VGS, ID = 1mA)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7155 Rev A 1-2003

DYNAMIC CHARACTERISTICS

APT30M75BLL - SLL

Symbol

Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

Ciss

Input Capacitance

VGS = 0V

3018

Coss

Output Capacitance

771

VDS = 25V

Crss

Reverse Transfer Capacitance

f = 1 MHz

Total Gate Charge 3

VGS = 10V

Qgs

Gate-Source Charge

VDD = 200V

Qgd

Gate-Drain ("Miller") Charge

ID = 44A @ 25°C

td(on)

Turn-on Delay Time

RESISTIVE SWITCHING

VGS = 15V

Rise Time

= 200V

td(off)

Turn-off Delay Time

ID = 44A @ 25°C

RG = 0.6Ω

Fall Time

Eon

Turn-on Switching Energy

INDUCTIVE SWITCHING @ 25°C

268

VDD = 200V, VGS = 15V

Eoff

189

Turn-off Switching Energy

ID = 44A, RG = 5Ω

µJ

Eon

Turn-on Switching Energy

INDUCTIVE SWITCHING @ 125°C

402

VDD = 200V VGS = 15V

Eoff

Turn-off Switching Energy

ID = 44A, RG = 5Ω

220

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Continuous Source Current (Body Diode)

Amps

ISM

Pulsed Source Current 1

(Body Diode)

176

Diode Forward Voltage 2 (V

= 0V, I

= -I

44A)

1.3

Volts

t rr

Reverse Recovery Time (IS = -ID44A, dlS/dt = 100A/µs)

416

Q rr

Reverse Recovery Charge (IS = -ID44A, dlS/dt = 100A/µs)

5.9

µC

dv/dt

Peak Diode Recovery dv/dt

V/ns

THERMAL CHARACTERISTICS

Symbol

Characteristic

MIN

TYP

MAX

UNIT

Rθ

Junction to Case

0.38

°C/W

Rθ

Junction to Ambient

Repetitive Rating: Pulse width limited by maximum junction

4 Starting Tj = +25°C, L = 1.34mH, RG = 25Ω , Peak IL = 44A

temperature

dv/dt numbers reflect the limitations of the test circuit rather than the

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

device itself. IS ≤ -ID44A

di/dt ≤ 700A/µs VR ≤

VDSS TJ ≤

150°C

3 See MIL-STD-750 Method 3471

Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.

		0.40
	(°C/W)	0.35		0.9
	(°C/W)	0.30
	IMPEDANCE	0.30		0.5
	IMPEDANCE	0.20		0.5
				0.7
		0.25
2003-1	THERMAL,	0.10				Note:
2003-1	THERMAL,	0.10				P	t2
		0.15		0.3		DM	t1
				0.3
A	θ JC						Duty Factor D = t1/t
Rev	Z	0.05		0.1			2
Rev	Z	0.05		0.1		Peak TJ = PDM x Zθ JC + TC
7155		0		0.05	SINGLE PULSE
					SINGLE PULSE
			-5	-4	-3	-2	-1	1.0
-			10	10	10	10	10	1.0
050					RECTANGULARPULSEDURATION(SECONDS)
050				FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

Typical Performance Curves

		RC MODEL
		0.0329	0.00334
Junction	Power	0.158	0.00802
temp. ( ”C)	(Watts)	0.158	0.00802
temp. ( ”C)	(Watts)
		0.189	0.165
		Case temperature

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL

	160
	140		VDS> ID (ON) x		RDS(ON) MAX.
(AMPERES)	140		250 µSEC. PULSE TEST
			@ <0.5 % DUTY CYCLE
	120				TJ = -55°C
					TJ = -55°C
	100

CURRENT	80
CURRENT	60
, DRAIN	40
, DRAIN				TJ = +25°C
D	20
I			TJ = +125°C


	0	0	2	4	6	8	10	12	14
		VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

FIGURE4, TRANSFERCHARACTERISTICS

		45
		45
(AMPERES)		40
		40
		35
		35
		30
		30
CURRENT		25
		25
		20
		20
DRAIN,		15
		15
		10
D		10
D		5
I		5
		0
		0
			25				50	75	100	125	150
						TC, CASE TEMPERATURE (°C)
	FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RESISTANCE		2.5

						ID	= 22A
		2.0			VGS = 10V
SOURCE-TO-DRAINON	(NORMALIZED)

		1.5


		1.0


,		0.5



DS(ON)		0.0
DS(ON)		0.0
R		-		50 -25			0	25 50	75	100 125	150
					TJ, JUNCTION TEMPERATURE (°C)
					FIGURE 8, RDS(ON) vs. TEMPERATURE

APT30M75BLL - SLL

		100
(AMPERES)		90				VGS	=15 &10V		8.5V
									8.5V
		80
		80
		70							8V
									8V
CURRENT		60
CURRENT		50							7.5
		50

DRAIN		40
DRAIN		20
		30							7V
D									6.5V
,
I		10
		10							6V
									6V
		0 0		5		10	15	20	25	30
			VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
		FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RESISTANCE		1.40
RESISTANCE				NORMALIZED TO
				NORMALIZED TO
		1.30		VGS = 10V		@ ID = 22A
		1.30
ON		1.20			VGS=10V
ON
SOURCE-TO-DRAIN
SOURCE-TO-DRAIN		1.10
		1.10
		1.00
								VGS=20V
,		0.90
DS(ON)		0.80	0	20		40	60	80	100	120
R			0	20		40	60	80	100	120
				ID, DRAIN CURRENT (AMPERES)
		1.15		FIGURE 5, RDS(ON) vs DRAIN CURRENT
SOURCE-TO-DRAINBREAKDOWN	(NORMALIZED)VOLTAGE	1.15
SOURCE-TO-DRAINBREAKDOWN	(NORMALIZED)VOLTAGE	0.95
		1.10
		1.05
		1.00
,
DSS
BV		0.90-50
		0.90-50		-25	0	25	50	75	100 125	150
				TJ, JUNCTION TEMPERATURE (°C)
		FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
		1.2
THRESHOLDVOLTAGE		1.1
	(NORMALIZED)	1.0
	(NORMALIZED)	0.8
		0.9
,
GS(TH)		0.7
V
		0.6-50		-25	0	25	50	75	100 125	150
				TC, CASE TEMPERATURE (°C)
		FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE

050-7155 Rev A 1-2003

	176
		OPERATIONHERE
	100	LIMITEDBYRDS(ON)
(AMPERES)	100
(AMPERES)				100µS
CURRENT				100µS
	10

,DRAIN				1mS
,DRAIN		T =+25°C
D		T =+25°C
I		C		10mS
		TJ =+150°C		10mS
	1 1	SINGLE PULSE
	1 1	10	100	300
	VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE 10, MAXIMUM SAFE OPERATING AREA

(VOLTS)	16	ID = 44A
		ID = 44A

VOLTAGE	12
					VDS=60V
				VDS=150V
GATE-TO-SOURCE	8			VDS=150V
	8					VDS=240V
						VDS=240V
	4

,
GS
V	0 0
	0 0	10	20	30	40	50	60	70	80
			Qg, TOTAL GATE CHARGE (nC)

FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE

	50
	40		td(off)
(ns)			VDD = 200V
(ns)	30		RG = 5Ω
d(off)	30		RG = 5Ω
d(off)			TJ = 125°C
t			L = 100µH
and			L = 100µH
and	20
d(on)	20
d(on)
t
	10					td(on)
	10
	0	5	15	25	35	45	55	65	75
					ID	(A)
			FIGURE 14, DELAY TIMES vs CURRENT
	800		VDD = 200V
			VDD = 200V
			RG = 5Ω
			TJ = 125°C				E
( J)	600		L = 100µH				on
	600		L = 100µH
			EON includes
ENERGY			EON includes
			diode reverse recovery.
	400
SWITCHING	400
	200

Eoff

0
0	5	15	25	35	45	55	65	75
				ID (A)

FIGURE 16, SWITCHING ENERGY vs CURRENT

APT30M75BLL - SLL

20,000

10,000

		Ciss
(pF)
CAPACITANCE	1,000	Coss
	1,000

C,	100
C,

Crss

		10 0		10		20		30		40	50
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
(AMPERES)		200
		100

CURRENT				TJ =+150°C
CURRENT								TJ =+25°C
, REVERSE DRAIN		10
, REVERSE DRAIN
DR		10.3		0.5	0.7			0.9	1.1	1.3	1.5
I		10.3		0.5	0.7			0.9	1.1	1.3	1.5
		VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
		FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
		70	VDD = 200V
		60	RG = 5Ω
		60	TJ = 125°C
		50	L = 100µH
		50
(ns)		40				t	f
f						t
t
and		30						tr
r
t
		20
		10
		05		15	25		35	45	55	65	75
							ID (A)
		FIGURE 15, RISE AND FALL TIMES vs CURRENT

	800
	700
( J)	600
( J)
ENERGY	500		Eon
			Eon
	400
SWITCHING	400
	300				Eoff			VDD	= 200V
								VDD	= 200V
	200							ID = 44A
	200							TJ = 125°C
								TJ = 125°C
	100							L = 100µH
	100							EON includes
								EON includes
	0							diode reverse			recovery.
	0	0	5	10	15	20	25	30	35	40	45	50
				RG, GATE RESISTANCE (Ohms)
	FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

Typical Performance Curves

10 %			Gate Voltage
td(on)			TJ = 125 C
td(on)
tr
tr
		90%
			Drain Current
5 %	5 %		Drain Current
	5 %

	10 %		Drain Voltage

Switching Energy

Figure 18, Turn-on Switching Waveforms and Definitions

APT30D30B

VDD

VCE

D.U.T.

Figure 20, Inductive Switching Test Circuit

APT30M75BLL - SLL

90%

Gate Voltage

= 125 C

d(off)

Drain Voltage

90%

10%

Drain Current

Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

Drain

TO-247 Package Outline
4.69	(.185)
5.31	(.209)	15.49 (.610)
1.49	(.059)	16.26 (.640)
2.49	(.098)
		6.15 (.242) BSC	5.38 (.212)
		6.15 (.242) BSC	6.20 (.244)
			6.20 (.244)
		20.80 (.819)
		21.46 (.845)
			3.50 (.138)
			3.81 (.150)
		4.50 (.177) Max.	2.87 (.113)
		4.50 (.177) Max.	3.12 (.123)
			3.12 (.123)
0.40 (.016)			1.65 (.065)
0.40 (.016)		19.81 (.780)	2.13 (.084)
0.79 (.031)		19.81 (.780)	2.13 (.084)
		20.32 (.800)

1.01	(.040)	Gate
1.40	(.055)	Drain
		Drain

Source

2.21	(.087)
2.59	(.102)		5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

Drain (Heat Sink)

	D3PAK Package Outline
4.98	(.196)		15.95 (.628)			13.41 (.528)
5.08	(.200)		16.05 (.632)		1.04 (.041)	13.51 (.532)
1.47	(.058)				1.04 (.041)
1.47	(.058)				1.15 (.045)
1.57	(.062)				1.15 (.045)
1.57	(.062)
			Revised	13.79 (.543)		Revised	11.51 (.453)
			Revised	13.79 (.543)		8/29/97	11.61 (.457)
			4/18/95	13.99 (.551)
0.46	(.018)
0.56	(.022) {3 Plcs}				1.27 (.050)
0.020 (.001)					1.27 (.050)
0.020 (.001)					1.40 (.055)	3.81 (.150)
0.178 (.007)				1.98 (.078)		3.81 (.150)
2.67	(.105)			1.98 (.078)		4.06 (.160)
2.67	(.105)			2.08 (.082)		(Base of Lead)
2.84	(.112)	1.22 (.048)		2.08 (.082)		(Base of Lead)
2.84	(.112)	1.22 (.048)
		1.32 (.052)				Heat Sink (Drain)
				5.45 (.215) BSC		and Leads
				{2 Plcs.}		are Plated

Source

Drain

Gate

Dimensions in Millimeters (Inches)

APT's devices are covered by one or more of the following U.S.patents:	4,895,810	5,045,903	5,089,434	5,182,234	5,019,522	5,262,336
	5,256,583	4,748,103	5,283,202	5,231,474	5,434,095	5,528,058

050-7155 Rev A 1-2003

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