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APT50M65LLL

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APT50M65B2LL

APT50M65LLL

500V 67A 0.065Ω

POWER MOS 7 R MOSFET

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

B2LL

T-MaxTM

TO-264

LLL

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• Popular T-MAX™ or TO-264 Package

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

APT50M65B2LL_LLL

UNIT

VDSS

Drain-Source Voltage

500

Volts

Continuous Drain Current @ TC = 25°C

Amps

IDM

Pulsed Drain Current

268

VGS

Gate-Source Voltage Continuous

±30

Volts

VGSM

Gate-Source Voltage Transient

±40

Total Power Dissipation @ TC = 25°C

694

Watts

Linear Derating Factor

5.5

W/°C

TJ,TSTG

Operating and Storage Junction Temperature Range

-55 to 150

°C

Lead Temperature: 0.063" from Case for 10 Sec.

300

IAR

Avalanche Current 1

(Repetitive and Non-Repetitive)

Amps

EAR

Repetitive Avalanche Energy 1

EAS

Single Pulse Avalanche Energy 4

3000

STATICELECTRICALCHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BVDSS

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

500

Volts

RDS(on)

Drain-Source On-State Resistance 2 (VGS = 10V, 33.5A)

0.065

Ohms

Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)

100

µA

DSS

Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)

500

IGSS

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

±100

VGS(th)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Rev D 12-2003

APT Website - http://www.advancedpower.com

050-7012

DYNAMIC CHARACTERISTICS

APT50M65 B2LL - LLL

Symbol

Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

Ciss

Input Capacitance

VGS = 0V

7010

Coss

Output Capacitance

1390

VDS = 25V

Crss

Reverse Transfer Capacitance

f = 1 MHz

Total Gate Charge 3

VGS = 10V

141

Qgs

Gate-Source Charge

VDD = 250V

Qgd

Gate-Drain ("Miller") Charge

ID = 67A @ 25°C

td(on)

Turn-on Delay Time

RESISTIVESWITCHING

VGS = 15V

Rise Time

= 250V

td(off)

Turn-off Delay Time

ID = 67A @ 25°C

RG = 0.6Ω

Fall Time

Eon

Turn-on Switching Energy

INDUCTIVESWITCHING@25°C

1035

VDD = 333V, VGS = 15V

Eoff

845

Turn-off Switching Energy

ID = 67A, RG = 3Ω

µJ

Eon

Turn-on Switching Energy

INDUCTIVESWITCHING@125°C

1556

VDD = 333V, VGS = 15V

Eoff

Turn-off Switching Energy

ID = 67A, RG = 3Ω

1013

SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Continuous Source Current

(Body Diode)

Amps

ISM

Pulsed Source Current

(Body Diode)

268

Diode Forward Voltage

2 (V

= 0V, I

= -67A)

1.3

Volts

t rr

Reverse Recovery Time (IS = -67A, dlS/dt = 100A/µs)

680

Q rr

Reverse Recovery Charge (IS = -67A, dlS/dt = 100A/µs)

17.0

µC

dv/dt

Peak Diode Recovery dv/dt

V/ns

THERMALCHARACTERISTICS

Symbol

Characteristic

MIN

TYP

MAX

UNIT

Rθ JC

Junction to Case

0.18

°C/W

Rθ JA

Junction to Ambient

Repetitive Rating: Pulse width limited by maximum junction

4 Starting Tj = +25°C, L = 1.34mH, RG = 25Ω , Peak IL = 67A

temperature

5 dv/dt numbers reflect the limitations of the test circuit rather than the

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

device itself. IS ≤ -67A

di/dt ≤ 700A/µs

VR ≤

500V TJ ≤

150°C

3 See MIL-STD-750 Method 3471

6 Eon includes diode reverse recovery.

See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.

	(°C/W)	0.20
	(°C/W)	0.16	0.9
			0.9
	IMPEDANCE
	IMPEDANCE		0.7
			0.7
		0.12
2003-12	THERMAL,		0.5		Note:
2003-12	THERMAL,				P	t2
		0.08			DM	t1
			0.3
D	θ JC	0.04				Duty Factor D = t1/t	2
	Z		0.1				2
Rev			0.1	SINGLE PULSE	Peak TJ = PDM x Zθ JC + TC
Rev			0.05	SINGLE PULSE
7012-		0	0.05
		0
		10-5	10-4	10-3	10-2	10-1		1.0
050				RECTANGULARPULSEDURATION(SECONDS)
050			FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

Typical Performance Curves

RC MODEL

Junction temp. ( ”C)

	0.0271	0.00899F
Power	0.0656	0.0202F
(Watts)	0.0656	0.0202F
(Watts)
	0.0860	0.293F

Case temperature

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL

	180
	160	VDS> ID (ON) x RDS (ON)MAX.
(AMPERES)	160	250µSEC. PULSE TEST
		@ <0.5 % DUTY CYCLE
	140
	120

CURRENT	100
	80
	60			TJ = +125°C
DRAIN	60			TJ = +125°C
DRAIN	40			TJ = +25°C
,
D	20
I
								TJ = -55°C
	0 0							TJ = -55°C
	0 0	1	2	3	4	5	6	7	8	9
	VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

FIGURE4,TRANSFERCHARACTERISTICS

		70
(AMPERES)		60
		50

CURRENT		40
		30

, DRAIN		20
, DRAIN
D		10
I		10
		0	25		50	75		100	125	150
				TC, CASE TEMPERATURE (°C)
	FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
RESISTANCE		2.5		ID = 33.5A
				ID = 33.5A
				VGS = 10V
		2.0

DRAIN-TO-SOURCE ON	(NORMALIZED)	1.5
		1.0
		0.5
(ON),
DS		0.0		-25	0	25	50	75	100 125	150
R		-50		-25	0	25	50	75	100 125	150
				TJ, JUNCTION TEMPERATURE (°C)
		FIGURE8,ON-RESISTANCEvs.TEMPERATURE

	180							APT50M65B2LL - LLL
	180		15 &10V
			15 &10V				8V
(AMPERES)	160						8V
	160
	140							7V
	140
CURRENT	120
CURRENT	100
	100
	80								6.5V
DRAIN	60
DRAIN	40								6V
									6V
,
D										5.5V
I	20									5.5V
	0									5V
	0	0	5		10		15	20	25	30
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
RESISTANCEON	FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
RESISTANCEON	1.2
	1.4
			NORMALIZED TO
			VGS = 10V		@	33.5A
	1.3
SOURCE-TO	1.1		VGS=10V
	1.1
-	1.00
DRAIN									VGS=20V
									VGS=20V
(ON),	0.90
(ON),
DS	0.80	0	10	20		30	40	50	60	70
R		0	10	20		30	40	50	60	70

ID, DRAIN CURRENT (AMPERES)

FIGURE5,RDS(ON)vsDRAINCURRENT

BREAKDOWNSOURCE-TO-DRAIN	(NORMALIZED)VOLTAGE	1.15
BREAKDOWNSOURCE-TO-DRAIN	(NORMALIZED)VOLTAGE	1.10
		1.10
		1.05
		1.00
		0.95
,		0.90
DSS
BV		0.85-50
		0.85-50	-25	0	25	50	75	100 125	150
			TJ, JUNCTION TEMPERATURE (°C)
		FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
VOLTAGETHRESHOLD(TH),	(NORMALIZED)	1.2
VOLTAGETHRESHOLD(TH),	(NORMALIZED)	1.1								2003-
		1.1
		1.0
		0.9
		0.8
GS		0.7								12
V										D
		0.6-50	-25	0	25	50	75	100 125	150	Rev
			TC, CASE TEMPERATURE (°C)							7012-050
		FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE								7012-050
		FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE

050-7012 Rev D 12-2003

	268
	OPERATION HERE
(AMPERES)	LIMITED BY RDS (ON)
	100
		100µS
CURRENT		100µS
	10

,DRAIN		1mS
,DRAIN	TC =+25°C	10mS
D	TC =+25°C
I	TJ =+150°C
	TJ =+150°C
	SINGLE PULSE
	1

100

500

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

(VOLTS)	16	ID = 67A
		ID = 67A

VOLTAGE	12			VDS=100V
				VDS=100V
			VDS=250V
-TO-SOURCE	8				VDS=400V
-TO-SOURCE	4
, GATE	4
, GATE
GS
V	0 0	40	80	120	160	200
	0 0	40	80	120	160	200
		Qg, TOTAL GATE CHARGE (nC)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

	80
	70						td(off)
	60
(ns)	50	VDD = 333V
(ns)		RG = 3Ω
d(off)

	40	T	J	= 125°C
t			J
and		L = 100µH
		L = 100µH
	30
d(on)	30
d(on)
t	20
	20					td(on)
						td(on)
	10
	0
	10			30	50	70	90	110

ID (A)

FIGURE 14, DELAY TIMES vs CURRENT

	3000	VDD = 333V
		RG = 3Ω
	2500	T	J	= 125°C			Eon
			J
( J)		L = 100µH
( J)	2000	EON includes
ENERGY	2000	diode reverse			recovery.
ENERGY	1500
SWITCHING	1000
SWITCHING
	500
					Eoff
	0
	10			30	50	70	90	110
						ID (A)

FIGURE 16, SWITCHING ENERGY vs CURRENT

	30,000					APT50M65B2LL - LLL
	30,000
	10,000						Ciss
(pF)
C, CAPACITANCE	1,000						Coss
	1,000
	100						Crss
	10	0	10	20	30	40	50
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

	(AMPERES)	200
		100

	CURRENT	TJ =+150°C
		TJ =+25°C
	DRAINREVERSE,
		10

DR	1
I	1		0.5	0.7	0.9	1.1	1.3	1.5
	0.3		0.5	0.7	0.9	1.1	1.3	1.5
	VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
	FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
	160	VDD = 333V
		VDD = 333V
	140	RG = 3Ω
	120	TJ = 125°C					tf
	120	L = 100µH
(ns)	100
(ns)
f	80
t
and
and
r	60
t

	40
	20				tr
	20
	0
	10		30		50	70	90	110

ID (A)

FIGURE 15, RISE AND FALL TIMES vs CURRENT

	5000	VDD = 333V
		VDD = 333V
		ID = 67A	E
		TJ = 125°C	off
( J)	4000	TJ = 125°C
		L = 100µH
		EON includes
ENERGY		diode reverse	recovery.
		diode reverse	recovery.
SWITCHING	3000
SWITCHING	2000		Eon
	2000

	1000
	0

0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms)

FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

Typical Performance Curves

10 %	Gate Voltage
10 %
	TJ = 125 C
td(on)
t	Drain Current
r	90%
	90%
	5 %
10 %	Drain Voltage
Switching Energy

Figure18,Turn-onSwitchingWaveforms and Definitions

APT60DF60

VDD

VCE

D.U.T.

Figure 20, Inductive Switching Test Circuit

APT50M65B2LL - LLL

90%

Gate Voltage

TJ = 125 C

td(off)

		Drain Voltage
90%
		10%
	tf	0
	tf	Drain Current
Switching Energy		Drain Current
Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

T-MAX® (B2) Package Outline

TO-264 (L) Package Outline

4.69	(.185)			4.60	(.181)
5.31	(.209)	15.49 (.610)		5.21	(.205)	19.51 (.768)
1.49	(.059)	16.26 (.640)		1.80	(.071)	20.50 (.807)
2.49	(.098)			2.01	(.079)
			5.38 (.212)
			6.20 (.244)
					5.79 (.228)
Drain		20.80 (.819)			6.20 (.244)
		21.46 (.845)	Drain
			Drain		26.49 (1.043)
					25.48 (1.003)
		4.50 (.177) Max.	2.87 (.113)
		4.50 (.177) Max.	3.12 (.123)
			3.12 (.123)

								1.65 (.065)					2.29 (.090)
		0.40	(.016)					1.65 (.065)					2.69 (.106)
	0.79		(.031)	19.81 (.780)			2.13 (.084)					19.81 (.780)
				20.32 (.800)				Gate				21.39 (.842)
					1.01 (.040)			Gate				21.39 (.842)
				1.40 (.055)				Drain
								Source
									0.48			(.019)		0.76 (.030)
		2.21	(.087)								0.84	(.033)	1.30 (.051)
											0.84	(.033)	1.30 (.051)
									2.59			(.102)		2.79 (.110)
									2.59			(.102)		2.79 (.110)
		2.59	(.102)			5.45 (.215) BSC					3.00	(.118)	3.18 (.125)
						2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.														5.45 (.215) BSC
														2-Plcs.
														2-Plcs.
		Dimensions in Millimeters and (Inches)								Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

3.10 (.122)

3.48 (.137)

2.29 (.090)

2.69 (.106)

Gate

Drain

Source

050-7012 Rev D 12-2003

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