СПП1 / СППП. РГЗ / Паспортные данные MOSFET / APT20M34BLL
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APT20M34BLL
APT20M34SLL
200V 74A 0.034Ω
POWER MOS 7 R MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
BLL
D3PAK
TO-247
SLL
• Lower Input Capacitance |
• Increased Power Dissipation |
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• Lower Miller Capacitance |
• Easier To Drive |
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• Lower Gate Charge, Qg |
• TO-247 or Surface Mount D3PAK Package |
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MAXIMUM RATINGS |
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All Ratings: TC = 25°C unless otherwise specified. |
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Symbol |
Parameter |
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APT20M34BLL_SLL |
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UNIT |
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VDSS |
Drain-Source Voltage |
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200 |
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Volts |
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ID |
Continuous Drain Current @ TC = 25°C |
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74 |
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Amps |
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IDM |
Pulsed Drain Current |
1 |
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296 |
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VGS |
Gate-Source Voltage Continuous |
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±30 |
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Volts |
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VGSM |
Gate-Source Voltage Transient |
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±40 |
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PD |
Total Power Dissipation @ TC = 25°C |
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403 |
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Watts |
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Linear Derating Factor |
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3.23 |
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W/°C |
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TJ,TSTG |
Operating and Storage Junction Temperature Range |
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-55 to 150 |
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°C |
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TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
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300 |
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IAR |
Avalanche Current 1 |
(Repetitive and Non-Repetitive) |
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74 |
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Amps |
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EAR |
Repetitive Avalanche Energy 1 |
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30 |
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mJ |
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EAS |
Single Pulse Avalanche Energy 4 |
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1300 |
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STATIC ELECTRICAL CHARACTERISTICS |
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Symbol |
Characteristic / Test Conditions |
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MAX |
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BVDSS |
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) |
200 |
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Volts |
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RDS(on) |
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 37A) |
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0.034 |
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Ohms |
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I |
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) |
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100 |
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µA |
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DSS |
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) |
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500 |
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IGSS |
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) |
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±100 |
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nA |
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VGS(th) |
Gate Threshold Voltage (VDS = VGS, ID = 1mA) |
3 |
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5 |
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Volts |
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CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7008 Rev B 9-2004
DYNAMIC CHARACTERISTICS |
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APT20M34BLL_SLL |
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Symbol |
Characteristic |
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Test Conditions |
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TYP |
MAX |
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Ciss |
Input Capacitance |
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VGS = 0V |
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3660 |
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Coss |
Output Capacitance |
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1170 |
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pF |
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VDS = 25V |
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Crss |
Reverse Transfer Capacitance |
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f = 1 MHz |
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60 |
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Qg |
Total Gate Charge 3 |
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VGS = 10V |
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60 |
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Qgs |
Gate-Source Charge |
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VDD = 100V |
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23 |
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nC |
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ID = 74A @ 25°C |
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Qgd |
Gate-Drain ("Miller") Charge |
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26 |
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td(on) |
Turn-on Delay Time |
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RESISTIVE SWITCHING |
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10 |
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VGS = 15V |
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tr |
Rise Time |
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27 |
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V |
DD |
= 100V |
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ns |
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td(off) |
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25 |
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Turn-off Delay Time |
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ID = 74A @ 25°C |
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RG = 0.6Ω |
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tf |
Fall Time |
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4 |
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Eon |
Turn-on Switching Energy |
6 |
INDUCTIVE SWITCHING @ 25°C |
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505 |
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VDD = 133V, VGS = 15V |
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Eoff |
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395 |
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Turn-off Switching Energy |
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ID = 74A, RG = 5Ω |
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µJ |
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Eon |
Turn-on Switching Energy |
6 |
INDUCTIVE SWITCHING @ 125°C |
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640 |
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VDD = 133V VGS = 15V |
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Eoff |
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Turn-off Switching Energy |
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ID = 74A, RG = 5Ω |
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425 |
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SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS |
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Symbol |
Characteristic / Test Conditions |
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MIN |
TYP |
MAX |
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IS |
Continuous Source Current (Body Diode) |
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74 |
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Amps |
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ISM |
Pulsed Source Current 1 |
(Body Diode) |
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296 |
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VSD |
Diode Forward Voltage 2 (VGS = 0V, IS = -74A) |
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1.3 |
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Volts |
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t rr |
Reverse Recovery Time (IS = -74A, dlS/dt = 100A/µs) |
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160 |
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Q rr |
Reverse Recovery Charge (IS = -74A, dlS/dt = 100A/µs) |
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1.3 |
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µC |
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dv/dt |
Peak Diode Recovery dv/dt |
5 |
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5 |
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V/ns |
THERMAL CHARACTERISTICS |
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Symbol |
Characteristic |
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MIN |
TYP |
MAX |
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UNIT |
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RθJC |
Junction to Case |
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0.31 |
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°C/W |
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RθJA |
Junction to Ambient |
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40 |
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1 |
Repetitive Rating: Pulse width limited by maximum junction |
4 |
Starting Tj = +25°C, L = 0.470mH, RG = 25Ω, Peak IL = 74A |
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temperature |
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5 |
dv/dt numbers reflect the limitations of the test circuit rather than the |
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2 |
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% |
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device itself. IS ≤ -ID74A |
di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C |
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3 |
See MIL-STD-750 Method 3471 |
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6 |
Eon includes diode reverse recovery. See figures 18, 20. |
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APT Reserves the right to change, without notice, the specifications and information contained herein.
9-2004 |
THERMALIMPEDANCE (°C/W) |
B |
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JC |
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Rev |
θ |
Z |
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050-7008 |
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0.35
0.30
0.25
0.20
0.15
0.10
0.05
0 10-5
0.9
0.7
0.5 |
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Note: |
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DM |
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t |
1 |
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0.3 |
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t2 |
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Duty Factor D = t1/t |
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2 |
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0.1 |
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Peak TJ = PDM x ZθJC + TC |
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0.05 |
SINGLE PULSE |
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10-4 |
10-3 |
10-2 |
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10-1 |
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1.0 |
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RECTANGULARPULSEDURATION(SECONDS) |
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FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION |
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Typical Performance Curves
RC MODEL |
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Junction |
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temp. (°C) |
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0.131 |
0.00789F |
Power |
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(watts) |
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0.180 |
0.161F |
Case temperature. (°C) 
FIGURE2,HIGHVOLTAGEOUTPUTCHARACTERISTICS
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120 |
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VDS> ID (ON) x |
RDS (ON)MAX. |
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250 µSEC. PULSE TEST |
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(AMPERES) |
100 |
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@ <0.5 % DUTY CYCLE |
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80 |
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CURRENT |
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TJ = +25°C |
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DRAIN, |
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TJ = +125°C |
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TJ = -55°C |
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D |
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VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE4,TRANSFERCHARACTERISTICS |
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(AMPERES) |
70 |
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60 |
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CURRENT |
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DRAIN, |
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D |
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0 |
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25 |
50 |
75 |
100 |
125 |
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TC, CASE TEMPERATURE (°C) |
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FIGURE 6, MAXIMUM DRAINCURRENT vs CASE TEMPERATURE |
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RESISTANCE |
2.5 |
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ID |
= 37A |
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VGS = 10V |
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SOURCE-TO-DRAINON (NORMALIZED) |
2.0 |
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1.5 |
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1.0 |
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0.5 |
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(ON), |
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DS |
0.0 |
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R |
-50 -25 |
0 |
25 50 |
75 |
100 125 |
150 |
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TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
D
I , DRAIN CURRENT (AMPERES)
BV ,DRAIN-TO-SOURCEBREAKDOWN R (ON),DRAIN-TO-SOURCEONRESISTANCE DSS DS VOLTAGE(NORMALIZED)
(NORMALIZED)
V (TH),THRESHOLDVOLTAGE GS
APT20M34BLL_SLL
160 |
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VGS=10 &15V |
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140 |
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6.5V |
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120 |
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100 |
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6V |
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80 |
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5.5V |
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60 |
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5V |
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40 |
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4.5V |
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4V |
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0 |
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10 |
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20 |
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VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
NORMALIZED TO
VGS = 10V @ 37A
1.3
1.2
VGS=10V 
1.1
1.0
0.9
VGS=20V
0.8
0 |
20 |
40 |
60 |
80 |
100 |
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ID, DRAIN CURRENT (AMPERES) |
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FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C)
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C)
FIGURE 9,THRESHOLDVOLTAGEvsTEMPERATURE
050-7008 Rev B 9-2004
050-7008 Rev B 9-2004
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297 |
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OPERATIONHERE |
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LIMITEDBYRDS(ON) |
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(AMPERES) |
100 |
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100µS |
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CURRENT |
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1mS |
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DRAIN |
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T |
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=+25°C |
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10mS |
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C |
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TJ |
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1 |
SINGLE PULSE |
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1 |
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10 |
100 |
200 |
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VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE 10, MAXIMUM SAFE OPERATING AREA |
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(VOLTS) |
16 |
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ID = 74A |
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VOLTAGE |
12 |
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VDS=40V |
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VDS=100V |
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SOURCE-TO-GATE |
8 |
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VDS=160V |
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GS |
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V |
0 0 |
10 |
20 |
30 |
40 |
50 |
60 |
70 |
80 |
90 |
100 |
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Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
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50 |
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td(off) |
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40 |
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(ns) |
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VDD = 133V |
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30 |
RG = 5Ω |
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d(off) |
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T |
J |
= 125°C |
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t |
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and |
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L = 100µH |
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20 |
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d(on) |
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t |
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t |
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d(on) |
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10 |
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010 |
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30 |
50 |
70 |
90 |
110 |
130 |
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ID (A) |
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FIGURE 14, DELAY TIMES vs CURRENT |
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1200 |
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VDD = 133V |
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1000 |
RG = 5Ω |
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TJ |
= 125°C |
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( J) |
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L = 100µH |
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Eon |
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E |
ON |
includes |
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ENERGY |
800 |
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diode reverse |
recovery. |
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600 |
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SWITCHING |
400 |
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Eoff |
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200 |
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010 |
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30 |
50 |
70 |
90 |
110 |
130 |
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ID (A) |
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FIGURE 16, SWITCHING ENERGY vs CURRENT
APT20M34BLL_SLL
20,000
10,000
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Ciss |
(pF) |
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CAPACITANCE |
1,000 |
Coss |
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C, |
100 |
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Crss |
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10 0 |
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10 |
20 |
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30 |
40 |
50 |
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VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE |
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(AMPERES) |
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200 |
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100 |
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TJ =+150°C |
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CURRENT |
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TJ =+25°C |
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, REVERSE DRAIN |
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10 |
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DR |
10.3 |
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0.5 |
0.7 |
0.9 |
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1.1 |
1.3 |
1.5 |
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I |
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VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) |
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FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE |
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120 |
V |
DD |
= 133V |
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100 |
RG = 5Ω |
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TJ = 125°C |
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L = 100µH |
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80 |
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(ns) |
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tf |
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f |
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60 |
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t |
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and |
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t |
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r |
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r |
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t |
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40 |
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20 |
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010 |
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30 |
50 |
70 |
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90 |
110 |
130 |
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ID (A) |
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FIGURE 15, RISE AND FALL TIMES vs CURRENT |
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1200 |
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1000 |
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Eoff |
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( J) |
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ENERGY |
800 |
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Eon |
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600 |
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SWITCHING |
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400 |
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VDD = 133V |
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ID = 74A |
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200 |
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TJ = 125°C |
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L = 100µH |
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EON |
includes |
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0 |
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diode reverse |
recovery. |
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0 |
5 |
10 |
15 |
20 |
25 |
30 |
35 |
40 |
45 |
50 |
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RG, GATE RESISTANCE (Ohms) |
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FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE |
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Typical Performance Curves |
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APT20M34BLL_SLL |
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GateVoltage |
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90% |
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10% |
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TJ125°C |
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GateVoltage |
T 125°C |
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td(on) |
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td(off) |
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J |
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tr |
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90% |
|
Drain Current |
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90% |
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tf |
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Drain Voltage |
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5% |
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5% |
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10% |
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10% |
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0 |
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Drain Voltage |
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Drain Current |
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Switching Energy |
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Switching Energy |
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Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60S20
VDD |
ID |
VDS |
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline |
D3PAK Package Outline |
Drain
4.69 |
(.185) |
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5.31 |
(.209) |
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15.49 (.610) |
1.49 |
(.059) |
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16.26 (.640) |
2.49 |
(.098) |
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6.15 (.242) BSC |
5.38 (.212) |
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6.20 (.244) |
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20.80 (.819) |
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21.46 (.845) |
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3.50 (.138) |
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3.81 (.150) |
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4.50 (.177) Max. |
2.87 (.113) |
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3.12 (.123) |
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0.40 (.016) |
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1.65 (.065) |
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0.79 (.031) |
19.81 (.780) |
2.13 (.084) |
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20.32 (.800) |
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1.01 |
(.040) |
Gate |
1.40 |
(.055) |
Drain |
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Source
2.21 |
(.087) |
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2.59 |
(.102) |
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5.45 (.215) BSC |
|
2-Plcs.
Dimensions in Millimeters and (Inches)
Drain (Heat Sink)
4.98 |
(.196) |
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15.95 (.628) |
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13.41 (.528) |
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5.08 |
(.200) |
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16.05 (.632) |
1.04 (.041) |
13.51 (.532) |
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1.47 |
(.058) |
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1.15 (.045) |
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1.57 |
(.062) |
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Revised |
13.79 (.543) |
Revised |
11.51 (.453) |
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8/29/97 |
11.61 (.457) |
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4/18/95 |
13.99 (.551) |
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0.46 |
(.018) |
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0.56 |
(.022) {3 Plcs} |
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1.27 (.050) |
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0.020 (.001) |
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1.40 (.055) |
3.81 (.150) |
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0.178 (.007) |
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1.98 (.078) |
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2.67 |
(.105) |
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4.06 (.160) |
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2.08 (.082) |
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(Base of Lead) |
|||
2.84 |
(.112) |
1.22 (.048) |
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1.32 (.052) |
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Heat Sink (Drain) |
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5.45 (.215) BSC |
and Leads |
|
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{2 Plcs.} |
|
are Plated |
|
Source |
Drain |
Gate |
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7008 Rev B 9-2004